Logic-Level Power MOSFETs File Number 1558 RFM15NO05L, RFM15NO6L, RFP15NO5L, RFP15NO6L Power Logic Level MOSFETs N-Channel Logic Level TERMINAL DIAGRAM Power Field-Effect Transistors (L* FET) 15 A, 50 and 60 V Tos(on): 0.14.0 Features: = Design optimized for 5 volt gate drive | G D a Can be driven directly fram Q-MOS, N-MOS, TTL Circuits = Compatible with automotive drive requirements SOA is power-dissipation limited mu Nanosecond switching speeds s = Linear transfer characteristics 9208-33741 a High input impedance = Majority carrier device N-CHANNEL ENHANCEMENT MODE The RFM15NO5L and RFM15NO6L and the RFP15NO5L TERMINAL DESIGNATIONS and RFP15NO6L* are N-channel enhancement-mode RFMASNOSL DRAIN silicon-gate power field-effect transistors designed for RFMI5NO6L SOURCE (FLANGE ) applications such as switching regulators, switching Ny converters, motor drivers, relay drivers, and drivers for high-power bipoiar switching transistors requiring high O O speed and iow gate-drive power. These types can be @ operated directly from integrated circuits. GATE The RFM-series types are supplied in the JEDEC TO- 928-3780! 204AA steel! package and the RFP-series types in the RFPISNOSL JEDEC TO-204AA JEDEC TO-220A8B plastic package. RFPISNOGL Because of space limitations branding (marking) on type SOURCE RFP15NO5L is FISNOSL and on type RFP1SNO6L is | _ ft , F1SNO6L. (FLANGE) " O co Leave *The RFM and RFP series were formerly RCA TOP VIEW developmental numbers TA9522 and TA9523, 92c$-39528 respectively. JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): REM15N05L RFM1I5NO06L RFPISNOSL RFPISNO6L DRAIN-SOURCE VOLTAGE ..............00 005 50 60 50 60 Vv DRAIN-GATE VOLTAGE (Rgs = 1 MQ) 50 60 50 60 Vv GATE-SOURCE VOLTAGE ............ : +10 Vv DRAIN CURRENT, RMS Continuous ......... cee 16 A Pulsed .......... 00sec eee . 40 A POWER DISSIPATION @ Tc = 25C... . 0. eee eee 75 75 60 60 Ww Derate above Tc = 25C 0.6 0.6 0.48 0.48 w/c OPERATING AND STORAGE TEMPERATURE .......... 0 ccc cece ere ene Ti, Tstg 9 _-- 55 to #150 c -35Logic-Level Power MOSFETs RFM15NO5L, RFM15NO6L, RFP15NO5L, RFP15NO6L ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc = 25 C) unless otherwise specified LIMITS TEST RFM15NO5L RFM15NO6L CHARACTERISTIC SYMBOL CONDITIONS RFP15NO5L RFP15NO6L UNITS MIN. MAX. MIN. MAX. Drain-Source Breakdown BVoss lb=1mMA 50 _ 60 _ v Voltage Vas = 0 . Gate-Threshold Voltage Vesin Ves = Vos 1 2 1 2 v lp =1mA Zero-Gate Voltage Drain loss Vos = 40 V _ 1 - Current Vos = 50 V _ _ 1 Teo = 126C uA Vos =40V _ 50 _ _ Vos = 50 V _ _ =_ 50 Gate-Source Leakage Current lass Ves =110V _ 100 _ 100 nA Vos =0 Drain-Source On Voltage Voston Ip=7.5A _ 1.05 _ 1.05 Ves =5V Vv Ip=15A - 3.0 - 3.0 Vas =5V Static Drain-Source On Tosiom ln=7.5A = 0.14 _ 0.14 2 Resistance Vas=5V Forward Transconduct a Vos = 10 V rwar nsconductance Gs os 0 40 _ 40 _ mho Ip=7.5A Input Capacitance Ciss Vos = 25 V _ 900 _ 900 Output Capacitance Coes Vas=OV _ 450 _ 450 pF Reverse-Transfer Capacitance Cres f=1 MHz 200 _ 200 Turn-On Delay Time tatom Voo = 30V 16(typ) 40 16(typ) 40 Rise Time t Ip = 7.8 A 250(typ) | 325 | 250(typ) | 325 as Turn-Off Delay Time taroth Rs = 6.25 2 200(typ) | 325 | 200(typ) | 325 Fall Time tr Ves=5V 225(typ) 325 225(typ) 325 Thermal Resistance R8sc RFM15NO5L, 1.67 1.67 Junction-to-Case ae NOEL C/W SNOSL, _ 2.083 - 2.083 RFP15NO6L SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS RFM15NO5L RFM15NO6L CHARACTERISTIC SYMBOL TEST CONDITIONS RFP15NO5L RFPI5NO6L | UNITS MIN. | MAX. | MIN. | MAX. Diode Forward Voltage Vsp4 Isp = 7.5A _ 1.4 1.4 Vv Reverse Recovery Time te le = 4A, die/d: = 100A/ps 225 (typ.) 225 (typ.) ns & Pulsed: Pulse duration = 300 ys, duty cycle = 2%. 5-36Logic-Level Power MOSFETs RFM15NO05L, RFM15NO6L, RFP15NO5L, RFP15NO6L __IN TEMPERATURE) 100 T CASE TEMPERATURE( Tc )= 25C : (CURVES MUST BE DERATED LINEARLY WITH INCREASE 3 ao @ a LIMITED BY [ros(on) DRAIN CURRENT (Ip )A [REI pgs (MAX.) 6OV(RFMISNOGL ,RFPISNOGL! Voss (MAX)SOVIRFMISNOSL,RFPISNOSL} 6 Big 2 4 6 81I00 2 4 ORAIN-TO- SOURCE VOLTAGE (Vpg)-V 92CM~ 38152 Fig. 1 - Maximum safe operating areas for all types. 50 100 CASE TEMPERATURE (Tc }C 92Cs- 38154 Fig. 2 - Power dissipation vs. case temperature derating curve for all types. Vgg* lov -50 50 100 {SO JUNCTION TEMPERATURE (7) )*C 92CS- 38146 Fig. 4 - Normalized drain-to-source on resistance vs. junction temperature for all types. Ip*!mA JUNCTION TEMPERATURE (Ty}*C 92CS-38145 Fig. 3 - Typical normalized gate threshold voltage as a function of junction temperature for ail types. PULSE TEST PULSE DURATION *60ys DuTY CYCLE $2 boy -40C ' 2 3 4 GATE-TO-SOURCE VOLTAGE (vgs)V 92CS-36147 Fig. 5 - Typical transfer characteristics for all types. 5-37Logic-Level Power MOSFETs RFM15NO5L, RFM15NO6L, RFP15NOSL, RFP15NO6L 10 BYoss RL = an Ig (REF) 4a 45 Ves= 5 Z - ds $ GATE SOURCE VOLTAGE $ 1 30 1 8 - oO = vi = foe Yoo = Yoss op = Yoss ao 0.75 Voss 0.75 Vpg, 8 0.50 Voss 0.50 Vpgs 2 m 0.25 Voss 0.25 Voss DRAIN SOURCE VOLTAGE fo |__. Ig (RE Ig (REF) jG IREF) ao GiREF) Ig (act) ig (ACT) TIME Microseconds 92cs-a7es4 Fig. 6 - Normalized switching waveforms for constant gate-current. Refer to RCA application notes AN-7254 and AN-7260. Voge 5V PULSE TEST PULSE OURATION=80y8 DUTY CYCLE < 2% ORAIN~- TO-SOURGE ON RESISTANCE rpg font}-OHMS DRAIN CURRENT (Ip)-A 9205 -38149 Fig. 8 - Typical drain-to-source on resistance as a function drain current for all types. Vos * PULSE TEST PULSE DURATION DUTY CYCLE s 2% 8 2 Fs E I o o a 9 z a & 9 2 a z 3 9 a z < c FE a = o 1 2 3 4 S$ 6 7 & 9 10 DRAIN CURRENT (Ip)A 9208-3815! Fig. 10 - Typical forward transconductance as a function of drain current for all types. 5-38 PULSE DURATION=80us DUTY CYCLE s2% CASE TEMPERATURE (Tc DRAIN CURRENT (Ip)-A 1 2 3 4 5 DRAIN- TO-SOURCE VOLTAGE {Vp5)~V 92CS-38148 Fig. 7 - Typical saturation characteristics for ail types. FREQUENCY (f) = 1 MHz 40 50 DRAIN- TO-SOURCE VOLTAGE (Vps}V 9205-38150 Fig. 9 - Capacitance as a function of drain-to-source voltage for all types. 42 pra ~ YD TO SCOPE \ | = Yoo = | | KELVIN 30v , tov CONTACT Ov- { ! af ius be i i | t ! tL ws tte = 92cs~38153 Fig. 11 - Switching Time Test Circuit.