December 2017
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This is information on a product in full production.
www.st.com
T1235T-8G
12 A Snubberless™ Triac
Datasheet -production data
Features
High static dV/dt
High dynamic turn-off commutation (dl/dt)c
150 °C maximum Tj
Three quadrants
Surge capability VDSM, VRSM = 900 V
Benefits
High immunity to turn-on thanks to high
static dV/dt
Better turn-off in high temperature
environments thanks to (dI/dt)c
Increase of thermal margin due to extended
working Tj up to 150 °C
Good thermal resistance due to
non-insulated tab
Applications
General purpose AC line load switching
Motor control circuits
Home appliances
Heating
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in SMD, the T1235T-8G Triac can be
used for the on/off or phase angle control
function in general purpose AC switching where
high commutation capability is required. This
device can be used without a snubber RC circuit
when the limits defined are respected.
D²PAK package is UL94-V0 flammability resin
compliance.
Package environmentally friendly Ecopack®2
graded (RoHS and Halogen Free compliance).
Snubberless™ is a trademark of
STMicroelectronics.
Figure 1: Functional diagram
Table 1: Device summary
Symbol
Value
IT(RMS)
12
A
VDRM/VRRM
800
V
VDSM/VRSM
900
V
IGT
35
mA
D²PAK
A2
A2
A1 G
A2
G
A1
A2: Anode2
A1: Anode1
G: Gate
Characteristics
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1 Characteristics
Table 2: Absolute maximum ratings (limiting values)
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current (full sine wave)
Tc = 124 °C
12
A
ITSM
Non repetitive surge peak on-state current,
Tj initial = 25 °C
tp = 16.7 ms
95
A
tp = 20 ms
90
I2t
I2t value for fusing
Tj initial = 25 °C
54
A2s
dl/dt
Critical rate of rise of on-state current,
IG = 2 x IGT, tr ≤ 100 ns
f = 100 Hz
100
A/µs
VDRM/VRRM
Repetitive peak off-state voltage
Tj = 150 °C
600
V
Tj = 125 °C
800
V
VDSM/VRSM
Non Repetitive peak off-state voltage
tp = 10 ms
900
V
IGM
Peak gate current
tp = 20 µs
Tj = 150 °C
4
A
PG(AV)
Average gate power dissipation
Tj = 150 °C
1
W
Tstg
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
Table 3: Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrants; Tj
Value
Unit
IGT
VD = 12 V, RL = 33 Ω
I - II - III
Min.
1.75
mA
VD = 12 V, RL = 33 Ω
I - II - III
Max.
35
mA
VGT
VD = 12 V, RL = 33 Ω
I - II - III
Max.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ, Tj = 150 °C
I - II - III
Min.
0.2
V
IL
IG = 1.2 x IGT
I - III
Max.
60
mA
IG = 1.2 x IGT
II
Max.
80
mA
IH(1)
IT = 500 mA, gate open
Max.
40
mA
dV/dt (1)
VD = 536 V, gate open
Tj = 125 °C
Min.
2000
V/µs
VD = 402 V, gate open
Tj = 150 °C
Min.
1000
V/µs
(dl/dt)c(1)
Without snubber, (dV/dt)c > 20 V/µs
Tj = 125 °C
Min.
12
A/ms
Tj = 150 °C
Min.
6
A/ms
Notes:
(1)For both polarities of A2 referenced to A1.
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Characteristics
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Table 4: Static characteristics
Symbol
Test conditions
Tj
Value
Unit
VTM(1)
IT = 17 A, tp = 380 µs
25 °C
Max.
1.6
V
VTO(1)
Threshold on-state voltage
150 °C
Max.
0.85
V
RD(1)
Dynamic resistance
150 °C
Max.
50
mΩ
IDRM/IRRM
VDRM = VRRM = 800 V
25 °C
Max.
5
µA
125°C
1
mA
VDRM = VRRM = 600 V
150 °C
Max.
3.1
mA
Notes:
(1)For both polarities of A2 referenced to A1.
Table 5: Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
D²PAK
Max.
1.6
°C/W
Characteristics
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1.1 Characteristics (curves)
Figure 2: Maximum power dissipation versus on-
state RMS current
Figure 3: On-state RMS current versus case
temperature
Figure 4: On-state RMS current versus ambient
temperature (free air convection)
Figure 5: Relative variation of thermal impedance
versus pulse duration
Figure 6: Relative variation of gate trigger voltage
and current versus junction temperature
(typical values)
Figure 7: Relative variation of holding current and
latching current versus junction temperature
(typical values)
0
2
4
6
8
10
12
14
16
18
0 2 4 6 8 10 12
P(W)
IT(RMS)(A)
180°
α= 180°
0
4
8
12
16
0 25 50 75 100 125 150
IT(RMS)(A)
Tc(°C)
α= 180°
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150
IT(RMS)(A)
Ta(°C)
α= 180
D2PAK
Scu = 1 cm2
Epoxy PCB FR4 copper thickness = 35 µm
1.0E-02
1.0E-01
1.0E+00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
K = [Zth/Rth]
tp(s)
Zth(j-c)
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
IGT,VGT[Tj] / IGT,VGT[Tj= 25 °C]
Tj(°C) IGT Q3
VGT Q1-Q2-Q3
IGT Q1-Q2
0.0
0.5
1.0
1.5
-50 -25 0 25 50 75 100 125 150
2.0 IH,IL[Tj] / IH,IL[Tj= 25 °C]
Tj(°C) IH
IL
T1235T-8G
Characteristics
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Figure 8: Surge peak on-state current versus
number of cycles
Figure 9: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
Figure 10: On-state characteristics
(maximum values)
Figure 11: Relative variation of critical rate of
decrease of main current versus junction
temperature
Figure 12: Relative variation of static dV/dt
immunity versus junction temperature
Figure 13: Relative variation of leakage current
versus junction temperature for different values of
blocking voltage
0
50
100
1 10 100 1000
ITSM(A)
Number of cycles
Repetitive
Tc= 124°C
Non repetitive
Tjinitial = 25 °C
t=20ms
One cycle
10
100
1000
10000
0.01 0.10 1.00 10.00
ITSM(A)
t (ms)
p
T initial=25°C
j
dI/dt limitation:
100A/µs
1
10
100
0 1 2 3 4 5
ITM(A)
VTM(V)
Tjmax.
Vto = 0.85 V
Rd= 50 mΩ
Tj= 150 °C
Tj= 25 °C
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
25 50 75 100 125 150
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C]
Tj(°C)
0
1
2
3
4
5
6
25 50 75 100 125 150
dV/dt [Tj] / dV/dt [Tj = 150 °C]
Tj(°C)
VD= VR= 402 V
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25 50 75 100 125 150
IDRM, IRRM at [Tj] / IDRM, IRRM at [Tj max.]*
Tj(°C)
VDRM = VRRM = 800 V
VDRM = VRRM = 600 V
*[Tjmax = 125 °C; VDRM, VRRM = 800 V]
[Tjmax = 150 °C; VDRM, VRRM = 600 V]
Package information
T1235T-8G
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DocID031279 Rev 1
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
ECOPACK®2 compliant
Lead-free package leads finishing
Molding compound resin is halogen-free and meets UL standard level V0
2.1 D²PAK package information
Figure 14: D²PAK package outline
T1235T-8G
Package information
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Table 6: D²PAK package mechanical data
Ref.
Dimensions
Millimeters
Inches(1)
Min.
Typ.
Max.
Min.
Typ.
Max.
A
4.30
4.60
0.1693
0.1811
A1
2.49
2.69
0.0980
0.1059
A2
0.03
0.23
0.0012
0.0091
A3
0.25
0.0098
b
0.70
0.93
0.0276
0.0366
b2
1.25
1.7
0.0492
0.0669
c
0.45
0.60
0.0177
0.0236
c2
1.21
1.36
0.0476
0.0535
D
8.95
9.35
0.3524
0.3681
D1
7.50
8.00
0.2953
0.3150
D2
1.30
1.70
0.0512
0.0669
e
2.54
0.1
E
10.00
10.28
0.3937
0.4047
E1
8.30
8.70
0.3268
0.3425
E2
6.85
7.25
0.2697
0.2854
G
4.88
5.28
0.1921
0.2079
H
15
15.85
0.5906
0.6240
L
1.78
2.28
0.0701
0.0898
L2
1.27
1.40
0.0500
0.0551
L3
1.40
1.75
0.0551
0.0689
R
0.40
0.0157
V2
0°
8°
0°
8°
Notes:
(1)Dimensions in inches are given for reference only
Package information
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Figure 15: D²PAK recommended footprint (dimensions are in mm)
Figure 16: D²PAK stencil definitions (dimensions are in mm)
T1235T-8G
Ordering information
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3 Ordering information
Figure 17: Ordering information scheme
Table 7: Ordering information
Order code
Marking
Package
Weight
Base qty.
Delivery mode
T1235T-8G-TR
T1235T-8G
D²PAK
1.38 g
1000
Tape and reel
T1235T-8G
50
Tube
4 Revision history
Table 8: Document revision history
Date
Revision
Changes
19-Dec-2017
1
Initial release.
T 12 35 T - 8 G - TR
Snubberless™TRIAC
RMS current
12 = 12 A
IGT current
35 = 35 mA
Package
G = D²PAK
Specific application
T = increased (dl/dt) and dV/dt producing reduced ITSM
Voltage
8 = 800 V
Packing
Blank = Tube
-TR = Tape and reel
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