ees AT 8 C16 Features @ Fast Read Access Time - 150 ns e@ Fast Byte Write - 200 us or 1 ms Self-Timed Byte Write Cycle Internal Address and Data Latches Internal Control Timer Automatic Clear Before Write Direct Microprocessor Control DATA POLLING Low Power 16K (2K xX 8) 30 mA Active Current 100 uA CMOS Standby Current CMOS @ High Reliability Endurance: 10* or 10 cycles E?PROM Data Retention: 10 years 5 V+ 10% Supply CMOS & TTL Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Full Military, Commercial, and Industrial Temperature Ranges Description The AT28C16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words x 8 bits. The device is manufactured with Atmels reliable non-volatile CMOS technology. The AT28C16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA polling of 1/07, Once the end of a write cycle has been detected, a new access for a read or a write can begin. The CMOS technology offers fast access times of 150 ns at low power dissipation. When the chip is deselected the standby current is less than 100 WA. Atmels 28C16 has additional features to ensure high quality and manufacturability. The de- vice utilizes error correction internally for extended endurance and for improved data reten- tion characteristics. An extra 32 bytes of EPROM are available for device identification or tracking. Pin Configurations CERDIP, PDIP, SOIC PLCC Top View Top View Pin Name Function Ay Ne wea ne AQ - A10 Addresses > mee cE Chip Enable a b WE OE Output Enable Ato WE Write Enable 3 Wor (/Q0 - (07 Data Inputs/Outputs 2 Vos NC No Connect hog 14151617181920 VO's 12 NC 345 GND Note: PLCC package pins } and 17 are DONT CONNECT. ANEL 2105 Me 1074177 0007899 b74AIMEL Block Diagram DATA INPUTS/OUTPUTS V s ons > VO0 - /O7 - behest OE * __ ___ >| WE OE, CE AND WE DATA LATCH ue LOGIC INPUT/OUTPUT cE >| BUFFERS ad Y DECODER id Y-GATING ADDRESS | __} "| INPUTS =| CELLMATRIX X DECODER + IDENTIFICATION Absolute Maximum Ratings* | *NOTICE: Stresses beyond those listed under Absolute Maxi- Temperature Under Bias...........0 -55C to +125C mum Ratings" may cause permanent damage to the device. a) 0 This is a stress rating only and functional operation of the de- Storage Temperature .....svesserrereee 65C to +150C vice at these or any other conditions beyond those indicated in All Input Voltages the operational sections of this specification is not implied. (including N.C. Pins) Exposure to ape maximum rating conditions for extended with Respect to Ground ......cccce -0.6 V to +6.25 V P ay allect device reManunry. All Output Voltages with Respect to Ground............ -0.6 V to Voc +0.6 V Voltage on OE and Ag with Respect to Ground ...... eee -0.6 V to +13.5 V Device Operation READ: The AT28C16 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the mem- ory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers in- creased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28C16 is similar to writing into a Static RAM. A low pulse on the WE or CE input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the last falling edge of WE (or CE); the new data is latched on the first rising edge. Internally, the device performs a self-clear before write. Once a byte write has been started, it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of twc, a read operation will effectively be a polling operation. FAST BYTE WRITE: The AT28CI16E offers a byte write time of 200 us maximum. This feature allows the entire device to be rewritten in 0.4 seconds. DATA POLLING: The AT28C16 provides DATA POLL- ING to signal the completion of a write cycle. During a write 2-106 me 107417? GOO7500 116 cycle, an attempted read of the data being written results in the complement of that data for I/O7 (the other outputs are indeter- minate). When the write cycle is finished, true data appears on all outputs. WRITE PROTECTION: Inadvertent writes to the device are protected against in the following ways. (a) Vcc sense~ if Vcc is below 3.8 V (typical) the write function is inhibited. (by) Vcc power on delay once Vcc has reached 3.8 V the device will automatically time out 5 ms (typical) before allowing a byte write. (c) Write Inhibit holding any one of OF low, CE high or WE high inhibits byte write cycles. CHIP CLEAR: The contents of the entire memory of the AT28C16 may be set to the high state by the CHIP CLEAR operation. By setting CE low and OE to 12 volts, the chip is cleared when a 10 msec low pulse is applied to WE. DEVICE IDENTIFICATION: An extra 32 bytes of E-PROM memory are available to the user for device identification. By raising A9 to 12 + 0.5 V and using address locations 7EOH to 7FFH the additional bytes may be written to or read from in the same manner as the regular memory array. AT28C16 _ees AT 28 C16 D.C. and A.C. Operating Range AT28C16-15 AT28C16-20 AT28C16-25 Com. 0C - 70C 0C - 70C 0C - 70C sae re(Case) Ind. -40C - 85C ~40C - 85C -40C - 85C 2 Mil. -B5C - 125C -55C - 125C -B5C - 125C Voc Power Supply 5V+10% 5V+10% 5V+10% Operating Modes Mode CE OE WE vO Read VIL Vit VIH Dout Write?) VIL VIH Vit DIN Standby/Write Inhibit VIH x") X High Z Write Inhibit X X VIH Write Inhibit x ViL x Output Disable X VIH X High Z Chip Erase VIL Vy VIL High Z Notes: 1. X can be Vy or Vin. 3. VH=12.0V 40.5 V. 2. Refer to A.C. Programming Waveforms. D.C. Characteristics Symbol Parameter Condition Min Max = _-Units Iu Input Load Current ViN=OVto Vcc +1V 10 yA ILo Output Leakage Current Viio=0V to Vec 10 pA IsB1 Vcc Standby Current CMOS CE = Voc-0.3 V to Voc + 1.0 V 100 HA Isp2 Voc Standby Current TTL CE = 2.0 Vto Voc + 1.0V Com. 2 mA Ind., Mil. 3 mA Ice Voc Active Current A.C. f= 5 MHz; lout = 0 mA Com. 30 mA CE = Vit Ind., Mil. 45 mA VIL Input Low Voltage 0.8 Vv VIH Input High Voltage 2.0 Vv VoL Output Low Voltage lot = 2.1 mA 4 Vv VoH Output High Voltage low = -400 pA 2.4 Vv Pin Capacitance (f= 1 MHz, T = 25C) Typ Max Units Conditions Cin 4 6 pF VIN=QOV Cout 8 12 pF Vout =0V Note: 1. This parameter is characterized and is not 100% tested. 2-107 AIMEL Me 1074177 0007501 052A.C. Read Characteristics AIMEL AT28C16-15 AT28C16-20 AT28C16-25 Symbol | Parameter Min Max Min Max Min Max Units tacc Address to Output Delay 150 200 250 ns tce | CE to Output Delay 150 200 250 ns toe ) | OE to Output Delay 10 70 10 80 10 100 ns tor | CE or OE High to Output Float 0 50 0 55 0 60 ns 'OH Addiese whichever eccurres first 0 0 0 ns A.C, Read Waveforms"? Notes: 1.-CE may be delayed up to tacc - tce after the address transition without impact on tacc. 2. OE may be delayed up to tc - tox after the falling edge of CE without impact on tcg or by tacc - tog after an address ADDRESS OUTPUT change without impact on tacc. Input Test Waveforms and Measurement Level AC DRIVING LEVELS tr, tr < 20 ns 2-108 3.0V 0.0V 1.5V AT28C16 We 1074177 OOO7I02 T99 a >< ADDRESS VALID tte ~ tACC On HIGH Z OUTPUT VALID 3. tppis specified from OF or CE whichever occurs first (CL=5 pF). 4, This parameter is characterized and is not 100% tested. Output Test Load 5.0V OUTPUT PIN 1.3K t MEASUREMENT 100pFees A 1 SC 16 A.C. Write Characteristics Symbol Parameter Min Typ Max Units tas, toes Address, OE Set-up Time 10 ns taH Address Hold Time 50 ns twe Write Pulse Width (WE or CE) 100 1000 ns tos Data Set-up Time 50 ns tDH.toEH Data, OE Hold Time 10 ns tes.tcH CE to WE and WE to CE Set-up and Hold Time 0 ns AT2 . twe Write Cycle Time BC16 0s 10 ms AT28C16E 100 200 us A.C. Write Waveforms- WE Controlled OE 7 NS tOES tOEH ADDRESS c tAS"| |. tAH CE a tCH NS _ tCS7| WE KN tWP 10S | __tDH DATA IN a twc A.C. Write Waveforms- CE Controlled OE a S ADDRESS c tAS"] |} tAH WE SS tCH L ics _ tes ________ CE NK |._____ {WP DSL tpH para IN fh twc ATMEL 2-109 ay MB 1074177 oo07903 3c5Data Polling Characteristics Symbol Parameter Min Typ Max Units toH Data Hold Time 10 ns toEH OE Hold Time 10 ns toe OE to Output Delay?) ns twR Write Recovery Time 0 ns Notes: 1. These parameters are characterized and not 100% tested. 2. See A.C, Characteristics. Data Polling Waveforms WE A0-A10 An < An X An An X Any Chip Erase Waveforms vl CE VH OE vl vIH WE ts = ty = 1 psec (min.) VIL tw = 10 msec (min.) tW- Vu=12.0V405V 2-110 AT28C16 see Me 107417? OOO7504 6b]ees A128 C 16 NORMALIZED SUPPLY CURRENT vs. NORMALIZED SUPPLY CURRENT vs. ts TEMPERATURE va SUPPLY VOLTAGE Nu nN 1 mt 7 2 1 i 1 i i 40 5 10 a 3 d d 08 | 08 c c c os C o6 55 -25 5 36 65 95 125 4.50 4.75 5.00 5.25 5.50 Temperature (C) Supply Voltage (V) NORMALIZED SUPPLY CURRENT vs. NORMALIZED ACCESS TIME vs. ADDRESS FREQUENCY N 4.25 OUTPUT LOAD N . 1.0 mn 1.20 v m a cc = SV 1 0.9 _ | ; 1.15 T=28C ma : 08 | 5 1.10 oe d Vec = 5' , 07 1=25 t 1.08 Za c C os 1.00 0 1 2 3 4 5 100 200 300 400 Frequency (MHz) Output Load (pF) OUTPUT SINK CURRENT vs. OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE OUTPUT VOLTAGE o u t _neeecesen 0 p 30 c c 20 u u Vee = 5V NX 10 T=25C \ t t 9 0 1 2 3 4 0 1 2 3 4 5 Output Voltage (V) Output Voltage (V) AIMEL 2111 M@@ 1074177 O807505 77S ooOrdering Information tacc loc (mA) ; . Ordering Code Package Operation Range (ns) Active | Standby 9 9 P 9 150 30 0.1 AT28C16(E)-15DC 24D6 Commercial AT28C16(E)-15JC 32J (0C to 70C) AT28C16(E)-15PC 24P6 AT28C16(E)-15SC 248 150 45 0.1 AT28C16(E)-15JI 32J Industrial AT28C16(E)-15Pl 24P6 (-40C to 85C) AT28C16(E)-15S1 24S AT28C16(E)-15DM/883 24D6 Military/883C Class B, Fully Compliant (-55C to 125C) 200 30 0.1 AT28C16(E)-20DC 24D6 Commercial AT28C16(E)-20JC 32J (0C to 70C) AT28C16(E)-20PC 24P6 AT28C16(E)-20SC 24S 200 45 0.1 AT28C16(E)-20J1 32J Industrial AT28C16(E)-20PI 24P6 (-40C to 85C) AT28C16(E)-20SI 24S AT28C16(E)-20DM/883 24D6 Military/883C Class B, Fully Compliant (-55C to 125C) 250 30 0.1 AT28C16(E)-25DC 24D6 Commercial AT28C16(E)-25JC 32J (0C to 70C) AT28C16(E)-25PC 24P6 AT28C16(E)-25SC 24S AT28C16-W DIE 250 45 0.1 AT28C16(E)-25Jl 32J Industrial AT28C16(E)-25PI 24P6 (-40C to 85C) AT28C16(E)-25SI 24S AT28C16(E)-25DM/883 24D6 Military/883C Class B, Fully Compliant (-55C to 125C) Note: 1. See valid Part Number table below. Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers Speed Package and Temperature Combinations AT28C16 15 DC, JC, Jl, PC, Pl, SC, SI, DM/883 AT28C16E 15 DC, JC, JI, PC, Pt, SC, SI, DM/883 AT28C16 20 DC, JC, JI, PC, Pl, SC, SI, DM/883 AT28C16E 20 DC, JC, JI, PC, Pl, SC, SI, DM/883 AT28C16 25 DC, JC, JI, PC, Pl, SC, SI, DM/883 AT28C16E 25 DC, JC, JI, PC, Pl, SC, SI, DM/883 2-112 AT28C16 enum ME 1074177 0007906 634ees A 1 OSC 16 Ordering Information Package Type 24D6 24 Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline Package (Cerdip) 32d 32 Lead, Plastic J-Leaded Chip Carrier (PLCC) 24P6 24 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 24S 24 Lead, 0.300 Wide, Plastic Gull Wing Small Outline (SOIC) Ww Die Options Blank Standard Device: Endurance = 10K Write Cycles; Write Time = 1 ms E High Endurance Option: Endurance = 100K Write Cycles; Write Time = 200 us AIMEL Me 1074177 0007907 S70 2-113