Co tid they shail be neithor reproduced, capied closed in any way whatsoever for the use af any nor used for the manutac turing purposes without ial and tha Informatan herein is ihe property of Ss written consent of Fuji Electric Co, Led, Target Specification of 1MB I1400SA-120 1. Quiline Drawing ( Unit : mm ) 2440.2 ,20+0.2 2940 2 8 2740.2 2040.2, 2040.2 48+0.2 62+) = - ceoss So EGSiz | 4 g " Ww i | 1 r 0 | | ' 2. Equivalent circuit : DATE NAME ___| APPROVED Fuji Electric Co,Ltd. ORAWN feb - {1-99 NV An'kawd 5 / SQ: crecxen Feb - -99 Si Ltda | SMT5F 9779 Jy REVISIONS rapes 5 5 7 T me 22398792 0004974 4035lent. or tisclused in any way whatsoever for the use ol any third party.nor used for the manufac turing purposes without the express written consent of Fuji Electric Co, Lid This material and the Information hersin 's the property of Furl Electac Co.bid They shall be neither reproduced, copied 3. Absolute Maximum Ratings (at Te= 25 unless otherwise specified ) Items Symbols Conditions Rerings Units Collector-Emitter voltage VCES 1200 y Gate-Emitter voltage YGES +20 V Ie Continuous | Te=25C 600 Tce=80T 400 Collector current Ie pulse Ins Te=28T 1200 A Tc=80T 800 -Te 400 -Ic pulse lms 800 Collector Pawer Dissipation Pc 1 device 2500 Junction temperature Tj 150 c Storage temperature Tstg -40~ +125 c Isolation voltage? Viso AC : tmin. 2300 V Mount ing 3.8 Screw Torque Terminals? 4.5 Neo Terminals " 1.7 (#1) All terminals should be connected together when isolation test will be done. (#2) Recommendable Value : 2.5~3.5 Nm (M5) or (M6) (3) Recomnendable Value: 3.5~4.5 N-m (M6) (#4) Recommendable Value : 1.3~1.7N-m (M4) 4. Electrical characteristics ( at Tiz 25 unless otherwise specified) Characteristics liems Symbols Conditions min. | typ. | Max. |Units lero gate vol tage rces |oE= OV, VE= 1200 4.0 | mA ollector current Gate-Emitter leakage current [GES |YCE = OY, WOE= +20V 0.8 uA antag vol tage vog(th) vee = 20, te = 400m] 55] 722] 85] V Collector-Emitter VCE (sat) |YGE = IV [Ti = 2 2.3 | 2.6 v saturation voltage Ic = 4004 [Tj = 1257 2.8 Input capacitance Cies |VGE = oY 48000 Output capacitance Coes |VCE = 10 10000 pF Reverse transfer capacitance Cres ff = 1 MHz 8800 ton Vcc = 600 1.2 Turn-on time tr Ic = 400 A 0. 6 try) |WGE = +15 V 0.1 Ls Turn-off time toff |RG = 1.8 Q 1.0 tf 0. 08 . 3 Forward on voltage VF HRs 400A [| Ti 2 22T 2.4 4} 3.3 V Tj = 125 TC 2. 0 Reverse recovery time tre IF = 400 A 0.35 | ws 3. Thermal resistance characteristics Characteristics Items Symbols Conditions nin. | typ. | Max [Units Thermal resistance Rth(j-c) | IGBT 0. 050 (1 device) FD 0. 160 )C/W Contact Thermal resistance Rin(c-f) | with Thermal Compound 0. 0125 % This is the value which is defined mounting on the additional cooling fin with thermal compound. Note : + This specification is only for technical considerations, and not for contract. This specification Is subject to be changed without notices. REVISTONS Fuji Electric Co.Ltd. ' i MT SF DWG.NO. 9779 Ye T Mm@ 2258752 OOOWW7S SYTSwitching time vs. Cotlector current (typ.) Switchiog time vs. Collector current (typ.) Vec=600, YGE=+ 15V, Rg= 1.80, Tj= 250 Vec=600V, YGE=+ 15V, Re= 1.8Q , T= 125T 1000 . 7 + ; + | , 1900 ; a | Pood a be i | . edn 2 8 ade coed 3 S ' = 500 i ~ = 5 i. cee esas cree nes 4 = : | | = = L ann fr J = ~ a be whe 4 c = ! 1 = ' | t : ' B ! 2 = = i. 100 nu z f | wo fg e of 1 3 590 L 4 i. 4 9 200 400 606 800 Collecter current : Ie [A} Collector current : Ye [A] Switching time vs. Gate resistance (typ. ) Switching loss vs. Collector current (typ. } Yee=600, [c=400A. VGE=+ 15V. Ty= 28 Yec=600V, VGE=+ 15V, Re=l.8Q 3000 tT a 100 , ; . : r r mo ' ! , 1 Eo (i375 ) = = = b Pet ton 4 -_ b . | Lee od ces gE & Soe z L 2 a e% 3 _ ne 33es 3 ages = wu L i ' | ees : ' i 2530 ww VO gf - | Eon(2scw 8l os = F 4 = 60 4 fs 232 : L 1 = gottarse > SE8G= = 500 a b } od faa? . . i Seses E r 4 = 'Boff(su ) zez - q ] = 40 ceses : Err (7s) euwseu 1 serge < 4 far. 9 = r 4 L . er eae =- 3 = = = | EU Sos ~ = ' E233 : eT a Bo = = rr 38 3 5 100 tL 4 = ogfxu = r 4 = - 4 <su.5e a r 1 & - gs8a Lo Lovee ee 4 i ay 3 30 L bt ad re 0 i 1 1 isiez 0.3 1 3 10 50 9 200 400 600 300 Gale resistance Re [Q } Collector current : Je (AJ) Switching toss vs. Gate resistance (typ. ) Reverse bias safe operating area Vee=600V. Ic=400A, VGE=+ J5V, Ty= 12ST +VGE=15V, -VGES 15V, Re2= 1.80 , TiS 125T 230 + 4 1000 T T T T ' : I Eon i : i } : | : , : i : - _ } t 1 L : : S : 2 200 . 800 3 z | & 150 b} = 500 & b \ 4 = : 2 | : S190 be. z 400 . : : Eoff . i 2 = ' 1 % $0 - 360 1 : = ! = - 4 : we : . q . i : ' : | a ' Err | i : i a 1 mt 1 a4 6 1 1 1 \ l 0.5 1 F} 10 50 0 200 400 600 800 1000 1200 1400 Gate resistance : Rg (Q 3} Collector - Ewitier votlage : VCE [ ) g 4, Fuji Electric Co.Ltd. eMTSF 9779 Y wi REVISIONS = . 5 -- T me 2238792 0004976 766This matecial and the information herein Js the property al Fuji Electnc Co Lid They shalt be neither reproduced. copied lent. or disclosed Ww any way whatsoever for the use af any third party.qor used for the manufacturing purposes without the express wrillen consent of Fuji Electric Co. Lid REVISIONS Collector current vs. Collector-Emitter vol lage Collector current vs. Collector-Emitier voltage Tj= 25 (typ. ) Tj= b25T (iyp.) 1900 : _ " . 1000 . . i : ! ' VOE 20Y 15V Lev: i isy . 2v B00 800 = . dec cess ] = | en = 600 2 600 . ! ! | 5 i L : | sees a ve wf . 10v J _ g ca. y S \ : - s : 2 { ! : c i 2 400 : = 400 i L, = b. | : .4 2 b i e S190 S100 . L 4 . cape ee de ce. sv i 0 oo = r T t x ~ r 0 1 0 ! 2 3 4 5 9 1 2 3 4 5 Coblector - Emitier voltage VCE 7 Vj Collector - Emitter voltage : VCE [VJ Collector current vs. _ Collector-Emitter voltage Collector-Emiiter voltage vs. Gate-Emilier voltage VGE=15V (typ. ) Tj= 25T (typ. ) 1000 $$ 10 t , : | 1 i t : Tye 25 Tis 125% - 4{ 800 = 3 : - | r 1 < L : : . . 4 S 4 os : ~ ; L : = 500 , 6 . = Vi i 4 = : - of : =z 400 : 24 : : & | | c q ! 4 L ; | Tes KOOA = i : I = 3 of pS Hee 4004 = 100 3 2 = / : ; j lr 2008 q } 4 3 . i i ! t 1 ' : 0 A oo 1 0 2 1 nk 4 An 4 4 4 0 1 2 3 4 5 5 10 15 20 25 Collector - Emitters voltage : VCE [V] Gate - Epiiter voltage : VGE VJ) Capacitance vs. Collector-Emitfer voliage (typ. ) Dynamic Gate charge (typ.) VGE=0V, f= IMHz, Tj 25 Vee=600V, Jce=400A, Tj= 25C 190000 5 1000 r r t , . 28 - 1 - ; & 4 = 300 } 4 20 Ss J | = ios] : 1 =) b 4 g = : 8 5 1 | = . 600 . 4 15 g & ; = : : & ~ 10900 =z } : | { = 4 > | = + 7 2 400 107 1 | : z ' 1 | a = = 200 5 2 z 7 = 3 ~ ' S L { i i 1900 1 4 LL _t 4 i 0 a 2 x ! 0 0 10 15 20 25 30 35 0 1090 2600 3000 4000 Collector - Emitter vollage : VCE iV} Gate charge Qe [at] Ss itd = : Fuji Electric Co.Ltd -MT5F 9779 OwG Mm ee3s7ie COON? bic6 = 3 a Oo a 2 ns} a : oe c 8 3 = e = g 5 Fug Elpcinc Co Lid They shall be neither eeomduced copied tent, ar disctosed in any way whatsoever for the usa of any third par ty.nor used far the manulac turing purposes without the express writlen consent of Fuji Electric Co, Ltd Thig male Forward current vs. Forward on voltage (typ) 1000 1 r Tyer28T = j=28T 8G0 - | <x _ A m 600 = 5 400 = 5 } = = 265 0 1 4. c 1 2 3 4 Forward on voltage : VF 1 : Transient thermal resistance 0.3 417 TT L : 4 be 4 . L eb PD: 4 = . r af 7 et J zx L- 0. 001 aes | aararewwes ra dani 0. 001 0.01 o1 1 Pulse width : Fe Definitions of switching time Reverse recovery characteristics (typ. ) Vec=600V, VGE=+ 15V, Rei. 8Q $00 t T T ' I i i 5 wp ee ee ee poveeceeee 4 <e r e = = ow - = - Reverse recovery current Reverse recovery fine 100 L - . ure(28T ) 4 -4 0 . iL i . ! . 0 260 400 600 800 Forward current : IF SA? REVISIONS Fuji Electric Co.Ltd. MT5F 9779 DWGNO. mm e2sa7ie o004978 559 a