BYV25FB-600,118 - NXP Semiconductors

1. Product profile

1.1 General description

Enhanced ultrafast power diode in a SOT404 (D2PAK) plastic package

1.2 Features and benefits

High thermal cyclin g pe rf or m anc e

Low on-state losses

Low thermal resi stance

Soft recovery characteristic

Surface-mountable package

1.3 Applications

Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for

Interleaved Topology

1.4 Quick reference data

BYV25FB-600

Enhanced ultrafast power diode

Rev. 02 — 7 March 2011 Product data sheet

D2PAK

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRRM repetitive peak

reverse voltage --600V

IF(AV) average forward

current square-wave pulse; δ=0.5;

Tmb ≤126 °C; see Figure 1;

see Figure 2

--5A

Static characteristics

VFforward voltage IF=5A; T

j=25°C;

see Figure 5 -1.31.9V

IF=5A; T

j=150°C;

see Figure 5 -1.11.7V

Dynamic characteristics

trr reverse recovery

time IF=1A; V

R=30V;

dIF/dt = 100 A/µs; Tj=25°C;

see Figure 6

-17.535ns

Product data sheet Rev. 02 — 7 March 2011 2 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

2. Pinning information

[1] It is not possible to connect to pin 2 of the SOT404 package.

3. Ordering information

4. Limiting values

Table 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1 n.c. not connected

SOT404 (D2PAK)

2 K cathode[1]

3 A anode

mb K mounting ba se; cathode

001aaa020

Table 3. Ordering information

Type number Package

Name Description Version

BYV25FB-600 D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads

(one lead croppe d) SOT404

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VRRM repetitive peak reverse voltage - 600 V

VRWM crest working reverse voltage - 600 V

VRreverse voltage DC - 600 V

IF(AV) average forward current square-wave pulse; δ= 0.5 ;

Tmb ≤126 °C; see Figure 1;

see Figure 2

-5A

IFRM repetitive peak forward current square-wave pulse; δ=0.5; t

p= 25 µs;

Tmb ≤126 °C -10A

IFSM non-repetitive peak forward

current tp= 10 ms; sine-wave pulse;

Tj(init) = 25 °C; see Figure 3 -60A

tp= 8.3 ms; sine-wave pulse;

Tj(init) = 25 °C; see Figure 3 -66A

Tstg storage temperature -40 150 °C

Tjjunction temperature - 150 °C

Product data sheet Rev. 02 — 7 March 2011 3 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

Vo = 1.50 V; Rs = 0.041 ΩVo = 1.50 V; Rs = 0.041 Ω

Fig 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values

Fig 2. Forward powe r dissipation as a function of

average forward current; sinusoidal waveform;

maximum values

Fig 3. Non-repetitive peak for ward current as a functio n of pulse width; square waveform; maximum values

IF(AV) (A)

08624

003aaf430

Ptot

(W)

δ = 1

0.5

0.2

0.1

IF(AV) (A)

054231

003aaf431

Ptot

(W)

a = 1.57

1. 9

2.2

2.8

4.0

003aaf446

tp (s)

10-5 10-2

10-3

10-4

102

103

IFSM

(A)

101tp

Product data sheet Rev. 02 — 7 March 2011 4 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

5. Thermal characteristics

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from

junction to mounting base see Figure 4 --2.5K/W

Rth(j-a) thermal resistance from

junction to ambient in free air [1] -50-K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse width

001aag913

−1

th(j-mb)

(K/W)

−3

−2

(s)

−6

10110

−1

−5

−3

−2

−4

δ =

Product data sheet Rev. 02 — 7 March 2011 5 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VFforward voltage IF=5A; T

j= 25 °C; see Figure 5 -1.31.9V

IF=5A; T

j= 150 °C; see Figure 5 -1.11.7V

IRreverse current VR=600V; T

j= 100 °C - - 1.5 mA

VR=600V; T

j=25°C --50µA

Dynamic characteristics

Qrrecovered charge IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

Tj=25°C; see Figure 6 -13-nC

trr reverse recovery time IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

Tj=25°C; see Figure 6 - 17.5 35 ns

IRM peak reverse recovery

current IF=1A; V

R=30V; dI

F/dt = 100 A/µs;

Tj=25°C; see Figure 6 -1.5-A

VFRM forward recovery

voltage IF=1A; dI

F/dt = 100 A/µs; Tj=25°C;

see Figure 7 -3.2-V

Vo = 1.50 V; Rs = 0.041 Ω

(1) Tj = 150 °C; typical values;

(2) Tj = 150 °C; maximum values;

(3) Tj = 25 °C; maximum values;

Fig 5. Forward current as a function of forward

voltage Fig 6. Reverse recovery definitions; ramp recovery

003aaf445

VF (A)

0321

(A)

(1) (2) (3)

003aac562

trr

time

100 %

25 %

IFdlF

IRIRM

Product data sheet Rev. 02 — 7 March 2011 6 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

Fig 7. Forward recovery definitions

001aab912

time

FRM

Product data sheet Rev. 02 — 7 March 2011 7 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

7. Package outline

Fig 8. Package outline SOT404 (D2PAK)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

A1D1

max. EeL

pHDQc

2.54 2.60

2.20

15.80

14.80

2.90

2.10

11 1.60

1.20 10.30

9.70

4.50

4.10 1.40

1.27 0.85

0.60 0.64

0.46

DIMENSIONS (mm are the original dimensions)

SOT404

0 2.5 5 mm

scale

Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404

e e

mounting

base

05-02-11

06-03-16

Product data sheet Rev. 02 — 7 March 2011 8 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

8. Soldering

Fig 9. Reflow soldering footprint for SOT404 (D2PAK)

msd057

solder lands

solder resist

occupied area

solder paste

10.50

7.40

7.50

1.50

1.70

10.60

1.20

1.30

1.55

5.08

10.85

0.30

2.15

8.35

2.25

4.60

0.20

3.00

4.85

7.95

8.15

8.075

8.275

5.40

1.50

Product data sheet Rev. 02 — 7 March 2011 9 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

9. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BYV25FB-600 v.2 20110307 Product data sheet - BYV25FB-600 v.1

Modifications: •Various changes to content.

BYV25FB-600 v.1 20100930 Product data sheet - -

Product data sheet Rev. 02 — 7 March 2011 10 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

10. Legal information

10.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have chan ged since th is document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

10.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

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contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggreg ate and cumulative liabil ity towards

customer for the products described herein shall be limited in accordance

with the Terms and condition s of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

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safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability rela ted to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 02 — 7 March 2011 11 of 12

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors product s by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization fro m national authorities.

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states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automo tive use. It i s neit her qualif ied nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product cl aims resulting fr om customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BYV25FB-600

Enhanced ultrafast power diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 7 March 2 011

Document identifier: BY V25 FB -600

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .7

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

11 Contact information. . . . . . . . . . . . . . . . . . . . . .11