Device Name DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. SPECIFICATION Power MOSFET FMI80N10T2 (T-pack L) FMC80N10T2 (T-pack S) FMB80N10T2 (T-pack SJ) Spec. No. : MS5F6118 Date : Jun.-17-2005 Fuji Electric Device Technology Co.,Ltd. MS5F6118 1 / 22 a b H04-004-05 Date Jun.-17 2005 Classification Index Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Revised Records Content Drawn Checked Checked Approved enactment Aug.-10 2005 added a guarantee Feb.-22 2006 revise a Revised characteristics curve. Addedrepetitive avalanche MS5F6118 a b 2 / 22 H04-004-03 1.Scope This specifies Fuji Power MOSFET FMI80N10T2,FMC80N10T2,FMB80N10T2 2.Construction N-Channel enhancement mode power MOSFET 3.Applications for Switching 4.Outview T-pack L Outview See to 8/22 page T-pack S Outview See to 9/22 page T-pack SJ Outview See to 10/22 page 5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified) Description Symbol Characteristics Unit V DS 100 V V DSX 60 V Continuous Drain Current ID 80 A Pulsed Drain Current IDP 320 A Gate-Source Voltage V GS +30/-20 V IAS 80 A Note *1 IAR 40 A Note *1 E AS 728 mJ Note *2 E AR 27 mJ Note *3 Maximum Drain-Source dV/dt dV DS /dt 20 kV/s VDS100V Peak Diode Recovery dV/dt dV/dt 5 kV/s Note *4 Maximum Power Dissipation PD Non-Repetitive Maximum Avalanche current Repetitive Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy 270 W 1.67 VGS=-20V Tc=25C Ta=25C Operating and Storage Tch 150 C Temperature range Tstg -55 to +150 C 6.Electrical Characteristics at Tc=25 C (unless otherwise specified) Static Ratings Description Symbol Drain-Source Conditions min. typ. max. Unit 100 - - V 2.0 - 4.0 V - - 25 A - - 250 A - - 100 nA - 10.0 12.8 m ID =250A Breakdown Voltage BV DSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance R DS (on) V GS =0V ID =250A V DS =VGS V DS =100V Tch=25 C V GS =0V V DS =80V Tch=125 C V GS =0V V GS = +30V / -20V V DS =0V ID =40A V GS =10V Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Drain-Source Voltage Remarks MS5F6118 a b 3 / 22 H04-004-03 Dynamic Ratings Description Symbol Conditions min. typ. max. Unit VDS=25V 15 30 - S ID=40A Forward Transconductance gfs Input Capacitance Ciss VDS=25V - 6000 9000 Output Capacitance Coss VGS=0V - 740 1110 370 555 Reverse Transfer f=1MHz Capacitance Crss - td(on) Vcc =48V - 33 49.5 tr VGS=10V - 44 66 td(off) ID=40A - 120 180 Turn-Off Time tf RGS=10 - 60 90 Total Gate Charge QG Vcc =48V - 120 180 Gate-Source Charge QGS ID=80A - 30 45 Gate-Drain Charge QGD VGS=10V - 34 51 min. typ. max. Unit - 1.00 1.50 V - 120 - ns - 0.52 - C min. typ. max. Unit Turn-On Time ns nC Reverse Diode Description Symbol Conditions IF=80A Diode Forward On-Voltage VSD VGS=0V Tch=25 C IF=80A Reverse Recovery Time trr Reverse Recovery VGS=0V -di/dt=100A/s Charge Qrr Tch=25 C 7.Thermal Resistance Description Symbol Channel to Case Rth(ch-c) 0.463 C/W Channel to Ambient Rth(ch-a) 75 C/W Note *1 : Tch150C, See Fig.1 and Fig.2 Note *2 : Starting Tch=25 C,IAS=32A,L=853H,Vcc=48V,RG=50, SeeFi g. 1andFi g. 2 EAS limited by maximum channel temperature and avalanche current. See to the 'Avalanche Energy' graph of page 21/22. Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Maximum Transient Thermal impedance' graph of page 22/22. Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150 C Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. pF MS5F6118 a b 4 / 22 H04-004-03 50 Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Fig.1 Test circuit L D.U.T L=853uH Vcc=48V Single Pulse Test MS5F6118 Vcc Fig.2 Operating waveforms +10V VGS -15V IDP BVDSS 0 VDS ID a b 5 / 22 H04-004-03 8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104 standards. Test items required without fail. Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering Through Hole Package (Solder Dipping,2605C(265Cmax.),101sec,2 times) SMD Package(IR-ray Reflow ,2555C(260Cmax.),101sec,2 times) Test No. Test Items 1 Terminal Strength (Tensile) 2 Terminal Strength (Bending) (Through Hole) Mechanical test methods 3 Mounting Strength (Through Hole) 4 Vibration 5 Shock 6 Solderability Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-Pack : 10N Force maintaining duration :305sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-Pack : 5N Number of times :2times(90deg./time) Screwing torque value: (M3) TO-220,TO-220F : 4010Ncm TO-3P,TO-3PF,TO-247 : 5010Ncm TO-3PL : 7010N cm frequency : 100Hz to 2kHz 2 Acceleration : 200m/s Sweeping time : 4min. 48min. for each X,Y&Z directions. 2 Peak amplitude: 15km/s Duration time : 0.5ms 3times for each X,Y&Z directions. About Through Hole Package type, each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body. 7 Resistance to Soldering Heat (Through Hole) Resistance to Soldering Heat (SMD Type) Reference Standard Sampling number Acceptance number EIAJ ED4701/400 method 401 15 EIAJ ED4701/400 method 401 15 EIAJ ED4701/400 method 402 15 EIAJ ED4701/400 method 403 15 EIAJ ED4701/400 method 404 15 (0:1) Solder temp. : 2455C Immersion time : 50.5sec Solder temp. : 2605C Immersion time : 101sec Number of times : 1times Solder temp. : 2555 C Immersion time : 101sec Number of times : 2times IR-ray Reflowing Fuji Electric Device Technology Co.,Ltd. ----- EIAJ ED4701/300 method 302 EIAJ ED4701/400 method 301 DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. (Through Hole) Testing methods and Conditions MS5F6118 15 15 15 a b 6 / 22 H04-004-03 Test Items Testing methods and Conditions Reference Standard 1 High Temp. Storage Temperature : 150+0/-5C Test duration : 1000hr 2 Low Temp. Storage Temperature : -55+5/-0C Test duration : 1000hr 3 Temperature Humidity Storage 4 Temperature Humidity BIAS Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS (max) * 0.8 EIAJ ED4701/200 method 201 EIAJ ED4701/200 method 202 EIAJ ED4701/100 method 103 EIAJ ED4701/100 method 103 5 Unsaturated Pressurized Vapor Test duration : 1000hr Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 48hr 6 Temperature Cycle Endurance test methods 7 8 9 10 High temp.side : 1505 C/30min. Low temp.side : -555 C/30min. RT : 5C 35C/5min. Number of cycles : 100cycles Thermal Shock Fluid : pure water(running water) High temp.side : 100+0/-5 C Low temp.side : 0+5/-0 C Duration time : HT 5min,LT 5min Number of cycles : 100cycles Tc=90degree Intermittent Operating TchTch(max.) Life Test duration : 3000 cycle HTRB Temperature : Tch=150+0/-5C (Gate-source) Bias Voltage : +VGS (max) Test duration : 1000hr HTRB Temperature : Tch=150+0/-5C (Drain-Source) Bias Voltage : VDS (max)*1.0 Test duration : 1000hr Sampling number 22 22 22 22 (0:1) EIAJ ED4701/100 method 103 22 EIAJ ED4701/100 method 105 22 EIAJ ED4701/300 method 307 EIAJ ED4701/100 method 106 EIAJ ED4701/100 method 101 EIAJ ED4701/100 Acceptance number 22 22 22 (0:1) 22 method 101 Failure Criteria Failure Criteria Lower Limit Upper Limit LSL * 1.0 --------USL * 2 ----USL * 2 LSL * 0.8 USL * 1.2 ----USL * 1.2 LSL * 0.8 --------USL * 1.2 Item Breakdown Voltage BVDSS Zero gate Voltage Drain-Source Current IDSS Gate-Source Leakage Current IGSS Gate Threshold Voltage VGS(th) Drain-Source on-state Resistance RDS(on) Forward Transconductance gfs Diode forward on-Voltage VSD Marking Soldering ----With eyes or Microscope and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150C. Fuji Electric Device Technology Co.,Ltd. DWG.NO. Electrical Characteristics Symbols Outvie w This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Climatic test methods Test No. MS5F6118 Unit V A A V S V ----- a b 7 / 22 H04-004-03 DWG.NO. Fuji Electric Device Technology Co.,Ltd. MS5F6118 a b 8 / 22 H04-004-03 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. DWG.NO. Fuji Electric Device Technology Co.,Ltd. MS5F6118 a b 9 / 22 H04-004-03 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. DWG.NO. Fuji Electric Device Technology Co.,Ltd. MS5F6118 a b 10 / 22 H04-004-03 This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 9. Cautions Although Fuji Electric is continually improving product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing physical injury, fire, or other problem in case any of the products fail. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. The products described in this Specification are not designed or manufactured to be used in equipment or systems used under life-threatening situations. If you are considering using these products in the equipment listed below, first check the system construction and required reliability, and take adequate safety measures such as a backup system to prevent the equipment from malfunctioning. Backbone network equipment Transportation equipment (automobiles, trains, ships, etc.) Traffic-signal control equipment Gas alarms, leakage gas auto breakers Submarine repeater equipment Burglar alarms, fire alarms, emergency equipment Medical equipment Nuclear control equipment etc. Do not use the products in this Specification for equipment requiring strict reliability such as(but not limited to): Aerospace equipment Aeronautical equipment 10. Warnings The MOSFETs should be used in products within their absolute maximum rating(voltage, current, temperature, etc.). The MOSFETs may be destroyed if used beyond the rating. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition .Please note the device may be destructed from the Avalanche over the specified maximum rating. The equipment containing MOSFETs should have adequate fuses or circuit breakers to prevent the equipment from causing secondary destruction (ex. fire, explosion etc...). Use the MOSFETs within their reliability and lifetime under certain environments or conditions. The MOSFETs may fail before the target lifetime of your products if used under certain reliability conditions. Be careful when handling MOSFETs for ESD damage. (It is an important consideration.) Whenhandl i ngMOSFET s , hol dt hembyt hec as e( pac k age)anddon' t t ouc ht hel eadsandt er mi nal s . It is recommended that any handling of MOSFETs is done on grounded electrically conductive floor and tablemats. Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. The products described in this Specification are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment(Terminal devices) Machine tools AV equipment Measurement equipment Personal equipment Industrial robots Electrical home appliances etc. MS5F6118 a b 11 / 22 H04-004-03 Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor. Installation Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Solder temperature and duration (through-hole package) Solder temperature 2605 C 35010 C Duration 101 seconds 3.50.5 seconds The immersion depth of the lead should basically be up to the lead stopper and the distance should be a maximum of 1.5mm from the device. When flow-soldering, be careful to avoid immersing the package in the solder bath. Recommended soldering condition Categories Through-Hole Possible Packages Wave Soldering Wave Soldering (Full dipping) (Only terminal) TO-3PL x TO-3P x TO-247 x TO-3PF x TO-220 x TO-220F x T-Pack(L) x TO-3PL-7 x Limited to 1 time xUnable Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. You must design the MOSFETs to be operated within the specified maximum ratings(voltage, current, temperature, etc.) to prevent possible failure or destruction of devices. Consider the possible temperature rise not only for the channel and case, but also for the outer leads. Do not directly touch the leads or package of the MOSFETs while power is supplied or during operation in order to avoid electric shock and burns. The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during operation. Design the arrangement to prevent the spread of fire. The MOSFETs should not used in an environment in the presence of acid, organic matter, or corrosive gas(hydrogen sulfide, sulfurous acid gas etc.) The MOSFETs should not used in an irradiated environment since they are not radiation-proof. Methods Infrared Reflow Air Reflow x x x x x x x x x x x x x x x x MS5F6118 Soldering iron (Re-work) a b 12 / 22 H04-004-03 Refer to the following torque reference when mounting the device on a heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance, both of which conditions may destroy the device. Table 1: Recommended tightening torques. Screw Tightening torques M3 30 -50 Ncm M3 40 -60 Ncm M3 60 -80 Ncm Note flatness : < =30m roughness : <=10m Plane off the edges : C<=1.0mm Theheats i nks houl dhav eaf l at nesswi t hi n30m andr oughnesswi t hi n10m. Al s o, k eept het i ght eni ng torque within the limits of this specification. Improper handling may cause isolation breakdown leading to a critical accident. ex.) Over plane off the edges of screw hole. (Recommended plane off the edge is C<1.0mm) We recommend the use of thermal compound to optimize the efficiency of heat radiation. It is important to evenly apply the compound and to eliminate any air voids. Installation / SMD Package Soldering involves temperatures which exceed the device storage temperature rating. To avoid device damage and to ensure reliability, observe the following guidelines from the quality assurance standard. Soldering temperature and duration (SMD Package) Reflow-Soldering Number of times Twice Soldering Temp. & 23050sec Time Package surface 26010sec Peak Temp. & Time Soldering methods (SMD Package) Methods Packages T-Pack(S) T-Pack(SJ) K-Pack(S) TFP Possible Wave Soldering Wave Soldering (Full dipping) (Only terminal) Infrared Reflow x x x x x x x x Limited to 1 time xUnable Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Air Reflow Soldering iron (Re-work) x x x x MS5F6118 a b 13 / 22 H04-004-03 Recommended Reflow profile 300 260(peak) 10sec 250 4.5/sec(max.) /Temperature [ ] 200 /Post Cooling -5/sec(max.) 150 /Pre-heat 150180 60120sec 100 230 50sec(max.) 6/sec(max.) 50 /time [sec] Storage The MOSFETs must be stored at a standard temperature of 5 to 35 C and relative humidity of 45 to 75%. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. The MOSFETs should not be subjected to rapid changes in temperature to avoid condensation on the surface of the MOSFETs. Therefore store the MOSFETs in a place where the temperature is steady. The MOSFETs should not be stored on top of each other, since this may cause excessive external force on the case. The MOSFETs should be stored with the lead terminals remaining unprocessed. Rust may cause presoldered connections to fail during later processing. The MOSFETs should be stored in antistatic containers or shipping bags. 11.Appendix This products does not contain PBBs (Polybrominated Biphenyl) or PBDEs (Polybrominated Diphenyl Ether ) , substances. This products does not contain Class-I ODS and Class-II ODS substances set force by ` Cl eanAi rAc t of US' law. If you have any questions about any part of this Specification, please contact Fuji Electric or its sales agent before using the product. Neither Fuji nor its agents shall be held liable for any injury caused by using the products not in accordance with the instructions. The application examples described in this specification are merely typical uses of Fuji Electric products. This specification does not confer any industrial property rights or other rights, nor constitute a license for such rights. Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 0 MS5F6118 a b 14 / 22 H04-004-03 0 0 25 20V 50 2 Fuji Electric Device Technology Co.,Ltd. DWG.NO. ID [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. PD [W] Allowable Power Dissipation PD=f(Tc) 300 250 200 150 100 50 0 75 100 80 4 6 125 8 150 Tc [ C] Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 140 120 10V 6V 100 5V 60 40 4.5V 20 VGS=4.0V 0 VDS [V] 10 MS5F6118 a b 15 / 22 H04-004-03 0 0.1 1 2 Fuji Electric Device Technology Co.,Ltd. DWG.NO. gfs [S] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. ID[A] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 VGS[V] 3 1 4 10 5 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 100 10 1 0.1 100 ID [A] MS5F6118 a b 16 / 22 H04-004-03 RDS(on) [ ] VGS=4V 0 10 -50 20 -25 30 40 0 50 25 Fuji Electric Device Technology Co.,Ltd. DWG.NO. RDS(on) [ ] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 0.04 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C 4.5V 5V 0.03 0.02 6V 10V 0.01 20V 0.00 60 70 50 Tch [ C] 80 75 90 100 110 120 ID [A] Drain-Source On-state Resistance RDS(on)=f(Tch):ID=40A,VGS=10V 0.04 0.03 0.02 max. 0.01 typ. 0.00 100 125 150 MS5F6118 a b 17 / 22 H04-004-03 VGS(th) [V] 3.5 1.5 -50 0 -25 0 10 50 25 Fuji Electric Device Technology Co.,Ltd. DWG.NO. VGS [V] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 6.0 5.5 5.0 4.5 4.0 max. 3.0 2.5 2.0 min. 1.0 0.5 0.0 50 75 Tch [ C] 100 100 150 125 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=80A,Tch=25 C 14 12 Vcc= 36V 48V 8 72V 6 4 2 0 200 Qg [nC] MS5F6118 a b 18 / 22 H04-004-03 C [pF] 10 5 10 4 10 10 2 10 1 10 -1 0.0 10 0 10 Fuji Electric Device Technology Co.,Ltd. DWG.NO. IF [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 3 Coss Crss 1 10 2 0.5 1.0 10 3 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 1000 100 10 1 0.1 1.5 VSD [V] MS5F6118 a b 19 / 22 H04-004-03 t [ns] 3 10 2 10 1 10 0 10 -1 0 10 25 0 50 10 60 75 Fuji Electric Device Technology Co.,Ltd. DWG.NO. IAV [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 td(off) tf tr td(on) 1 10 2 100 125 150 10 175 3 ID [A] Maximum Avalanche Energy vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 100 80 Non-Repetitive (Single Pulse) 40 Repetitive 20 0 200 starting Tch [ C] MS5F6118 a b 20 / 22 H04-004-03 EAV [mJ] 800 0 10 10 1 10 0 10 -1 10 -2 10-8 25 10-7 50 10-6 Fuji Electric Device Technology Co.,Ltd. DWG.NO. Avalanche Current I AV [A] This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=80A 1000 IAS=32A 600 IAS=48A 400 IAS=80A 200 0 75 100 10-5 10-4 125 150 starting Tch [ C] Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V 2 Single Pulse 10-3 MS5F6118 10-2 tAV [sec] a b 21 / 22 H04-004-03 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 Fuji Electric Device Technology Co.,Ltd. DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purp os es w ithout the express w ritten cons ent of Fuji Electric Device Technolog y C o. ,Ltd. Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 1 10 0 10 -3 10 -2 10 -1 MS5F6118 10 0 t [sec] a b 22 / 22 H04-004-03