Jun.-17-'05
Jun.-17-'05
Jun.-17-'05
DATE NAME
DRAWN
CHECKED
APPROVED
DWG.NO.
SPECIFICATION
Device Name :
Type Name:
Spec. No. :
Date :
H04-004-05
FMI80N10T2(T-pack L)
FMC80N10T2 (T-pack S)
FMB80N10T2(T-pack SJ)
MS5F6118
MS5F6118
1/22
Power MOSFET
Jun.-17-2005
CHECKED
Fuji Electric Device TechnologyCo.,Ltd.
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
a
b
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
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Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
enactment
Jun.-17
2005
Aug.-10
2005 added a
Addedrepetitive avalanche
guarantee
Feb.-22
2006 revise aRevised characteristics
curve.
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for the manufacturing purposes without the express written consent of
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1.Scope This specifies Fuji Power MOSFET FMI80N10T2,FMC80N10T2,FMB80N10T2
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Outview T-pack L Outview See to 8/22 page
T-pack S Outview See to 9/22 page
T-pack SJ Outview See to 10/22 page
5.Absolute Maximum Ratings at Tc=25
C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 100 V
VDSX 60 V VGS=-20V
Continuous Drain Current IDA
Pulsed Drain Current IDP ± 320 A
Gate-Source Voltage VGS V
IAS 80 A
IAR 40 A
EAS mJ
EAR mJ
Maximum Drain-Source dV/dt dVDS/dt kV/
s
Peak Diode Recovery dV/dt dV/dt kV/
s
Tc=25°C
1.67 Ta=25°C
Operating and Storage Tch 150
C
Temperature range Tstg -55 to +150
C
6.Electrical Characteristics at Tc=25
C (unless otherwise specified)
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250
A
Breakdown Voltage BVDSS VGS=0V 100 - - V
Gate Threshold ID=250
A
Voltage VGS(th) VDS=VGS 2.0 - 4.0 V
Zero Gate Voltage VDS=100V
VGS=0V Tch=25
C - - 25
A
Drain Current IDSS VDS=80V
VGS=0V Tch=125
C - - 250
A
Gate-Source VGS= +30V / -20V
Leakage Current IGSS VDS=0V - - 100 nA
Drain-Source ID=40A
On-State Resistance RDS(on) VGS=10V - 10.0 12.8 m
VDS
100V
W
5 Note *4
Maximum Power Dissipation PD270
728
20
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy 27 Note *3
80
Drain-Source Voltage
Note *2
+30/-20
Non-Repetitive
Maximum Avalanche current
Repetitive
Maximum Avalanche current
Note *1
Note *1
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Dynamic Ratings
Description Symbol Conditions min. typ. max. Unit
Forward ID=40A
Transconductance gfs VDS=25V 15 30 - S
Input Capacitance Ciss VDS=25V - 6000 9000
Output Capacitance Coss VGS=0V - 740 1110
Reverse Transfer f=1MHz 370 555 pF
Capacitance Crss -
td(on) Vcc=48V - 33 49.5
Turn-On Time tr VGS=10V - 44 66
td(off) ID=40A - 120 180 ns
Turn-Off Time tf RGS=10- 60 90
Total Gate Charge QGVcc=48V - 120 180
Gate-Source Charge QGS ID=80A - 30 45 nC
Gate-Drain Charge QGD VGS=10V - 34 51
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Diode Forward IF=80A
On-Voltage VSD VGS=0V Tch=25C- 1.00 1.50 V
Reverse Recovery IF=80A
Time trr VGS=0V - 120 - ns
Reverse Recovery -di/dt=100A/s
Charge Qrr Tch=25C- 0.52 - C
7.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.463 C/W
Channel to Ambient Rth(ch-a) 75 C/W
Note *1 : Tch150°C, See Fig.1 and Fig.2
Note *2 : Starting Tch=25C,IAS=32A,L=853H,Vcc=48V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 21/22.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 22/22.
Note *4 : IF-ID,-di/dt=50A/s,VccBVDSS,Tch150C
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Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
L=853uH
Vcc=48V
Single Pulse Test
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8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701/100 method104
standards.
Test items required without fail
.
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering
Through Hole Package (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
SMD Package(IR-ray Reflow ,255±5°C(260°Cmax.),10±1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F : 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247 : 25N ED4701/400 15
TO-3PL : 45N method 401
(Through Hole) T-Pack,K-Pack : 10N
Force maintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F : 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247 : 10N ED4701/400 15
TO-3PL : 15N method 401
(Through Hole) T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torque value: (M3) EIAJ (0:1)
Strength
TO-220,TO-220F : 40±10N
・
cm
ED4701/400
15
TO-3P,TO-3PF,TO-247 : 50±10N
・
cm
(Through Hole)
TO-3PL : 70±10N
・
cm
4 Vibration frequency : 100Hz to 2kHz EIAJ
Acceleration : 200m/s
2
ED4701/400
15
Sweeping time : 4min. method 403
48min. for each X,Y&Z directions.
5 Shock Peak amplitude: 15km/s
2
EIAJ
Duration time : 0.5ms ED4701/400 15
3times for each X,Y&Z directions. method 404
6 Solderability Solder temp. : 245±5°C
Immersion time : 5±0.5sec
About Through Hole Package type, ----- 15
each terminal shall be immersed in
the solder bath within 1 to 1.5mm from
the body.
7 Resistance to Solder temp. : 260±5°C EIAJ
Soldering Heat Immersion time : 10±1sec ED4701/300 15
(Through Hole) Number of times : 1times method 302
Resistance to Solder temp. : 255
5
CEIAJ 15
Soldering Heat Immersion time : 10±1sec ED4701/400
(SMD Type) Number of times : 2times method 301
IR-ray Reflowing
Mechanical test methods
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
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Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature : 150+0/-5°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 201
2 Low Temp. Temperature : -55+5/-0°C EIAJ 22
Storage Test duration : 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
Storage Test duration : 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity : 85±5% ED4701/100 22
BIAS Bias Voltage : VDS(max) * 0.8 method 103
Test duration : 1000hr
5 Unsaturated Temperature : 130±2°C EIAJ (0:1)
Pressurized Relative humidity : 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method 103
Test duration : 48hr
6 Temperature
High temp.side : 150
5
C/30min.
EIAJ
Cycle
Low temp.side : -55
5
C/30min.
ED4701/100 22
RT : 5°C 〜35°C/5min. method 105
Number of cycles : 100cycles
7 Thermal Shock Fluid : pure water(running water)
High temp.side : 100+0/-5
CEIAJ 22
Low temp.side : 0+5/-0
CED4701/300
Duration time : HT 5min,LT 5min method 307
Number of cycles : 100cycles
8 Intermittent
Tc=90degree EIAJ
Operating TchTch(max.) ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage : +VGS(max) ED4701/100 22 (0:1)
Test duration : 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : VDS(max)*1.0 ED4701/100 22
Test duration : 1000hr method 101
Climatic test methodsE
ndurance test methods
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL * 1.0 ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL * 2 A
Gate-Source Leakage Current IGSS ----- USL * 2 A
Gate Threshold Voltage VGS(th) LSL * 0.8 USL * 1.2 V
Drain-Source on-state Resistance RDS(on) ----- USL * 1.2
Forward Transconductance gfs LSL * 0.8 ----- S
Diode forward on-Voltage VSD ----- USL * 1.2 V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Electrical
Characteristics
Outvie
w
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
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or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
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for the manufacturing purposes without the express written consent of
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9.Cautions
･AlthoughFujiElectriciscontinuallyimproving productquality andreliability,asmall percentage of
semiconductorproductsmay becomefaulty.When usingFujiElectric semiconductor productsinyour
equipment, you are requestedtotakeadequatesafetymeasurestopreventtheequipment from causing
physicalinjury,fire,or otherproblemincase anyof theproductsfail. Itisrecommendedtomake yourdesign
fail-safe,flameretardant,andfree of malfunction.
･Theproductsdescribedinthis Specificationareintendedforuseinthefollowing electronicandelectrical
equipmentwhichhasnormalreliabilityrequirements.
･Computers ･OAequipment ･Communicationsequipment(Terminaldevices)
･Machine tools ･AVequipment ･Measurementequipment
･Personalequipment ･Industrialrobots ･Electricalhomeappliances etc.
･Theproductsdescribedinthis Specificationarenotdesignedormanufactured tobeusedinequipmentor
systemsusedunder life-threatening situations.Ifyou areconsi
dering using theseproductsinthe equipment
listed below, firstcheck thesystem constructionand required reliability, and takeadequatesafetymeasures
suchas abackupsystemto preventtheequipmentfrommalfunctioning.
･Backbonenetwork equipment ･Transportationequipment(automobiles,trains,ships,etc.)
･Traffic-signalcontrolequipment ･Gasalarms,leakagegasautobreakers
･Submarinerepeaterequipment ･Burglaralarms,firealarms,emergencyequipment
･Medicalequipment ･Nuclearcontrolequipment etc.
･Donotusetheproductsin thisSpecificationforequipment requiringstrict reliabilitysuchas(butnotlimited
to):
･Aerospaceequipment ･Aeronauticalequipment
10.Warnings
･TheMOSFETsshould be used inproductswithintheirabsolutemaximum rating(voltage, current,
temperature,etc.).
･TheMOSFETsmaybedestroyed if usedbeyondtherating.
･Weonlyguaranteethe non-repetitiveandrepetitiveAvalanche capabilityandnotforthecontinuous
Avalanchecapabilitywhichcanbeassumed asabnormalcondition.Pleasenotethedevicemaybe
destructedfromtheAvalancheoverthespecifiedmaximumrating.
･Theequipmentcontaining MOSFETsshould haveadequate fuses orcircuitbreakerstopreventthe
equipmentfromcausingsecondarydestruction(ex.fire,explosionetc…).
･UsetheMOSFETswithintheirreliability andlifetime undercertainenvironmentsorconditions. The
MOSFETsmayfail before thetargetlifetimeofyour productsif usedundercertainreliabilityconditions.
･Becarefulwhen handling MOSFETsfor ESDdamage.(Itisanimportantconsideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･Itis recommendedthatanyhandlingof MOSFETsis doneon grounded electricallyconductivefloorand
tablemats.
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･Before touching a MOSFET terminal, Discharge any static electricity from your body and clothes
by grounding out through a high impedance resistor (about 1M)
･When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron
or soldering bath through a low impedance resistor.
･You must design the MOSFETs to be operated within the specifiedmaximum ratings(voltage,
current, temperature, etc.) to prevent possible failure or destruction of devices.
･Consider the possible temperature rise not only for the channel and case, but also for the outer
leads.
･Do not directly touch the leads or package of the MOSFETs while power is supplied or during
operation in order to avoid electric shock and burns.
･The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit
smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause
the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during
operation. Design the arrangement to prevent the spread of fire.
･The MOSFETs should not used in an environment in the presence of acid, organic matter, or
corrosive gas(hydrogen sulfide, sulfurous acid gas etc.)
･The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Installation
･Soldering involves temperatures which exceed thedevice storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature Duration
2605C 101 seconds
35010 C 3.50.5 seconds
･The immersion depth of the lead should basically be up to thelead stopper and the distanceshould
be a maximum of 1.5mm from the device.
･When flow-soldering, be careful to avoid immersing the package in the solder bath.
Recommendedsolderingcondition
Methods
Categories Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Onlyterminal)
Infrared
Reflow Air
Reflow Soldering
iron
(Re-work)
TO-3PL × ◎ × × ○
TO-3P × ◎ × × ○
TO-247 × ◎ × × ○
TO-3PF × ◎ × × ○
TO-220 × ◎ × × ○
TO-220F × ◎ × × ○
T-Pack(L) × ◎ × × ○
Through-Hole
TO-3PL-7 × ◎ × × ○
◎：Possible ○：Limitedto1time ×：Unable
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･Refer to thefollowing torquereference whenmountingthedeviceonaheat sink. Excess torque
applied tothemountingscrewcausesdamage tothedevice and weak torquewill increase the
thermalresistance,bothof whichconditionsmaydestroythedevice.
Table 1:Recommended tightening torques.
Packagestyle Screw Tightening torques Note
TO-220
TO-220F M3 30 –50Ncm
TO-3P
TO-3PF
TO-247 M3 40 –60Ncm
TO-3PL M3 60–80Ncm
flatness : <=±30m
roughness: <=10m
Plane offthe edges:
C<=1.0mm
･The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening
torque within the limits of thisspecification.
･Improper handlingmaycause isolation breakdown leading toa criticalaccident.
ex.) Over planeoff the edges of screw hole. (Recommendedplaneoff the edgeis C<1.0mm)
･We recommendthe useofthermalcompoundtooptimizetheefficiencyof heatradiation.Itis importantto
evenly applythecompound and to eliminate anyair voids.
Installation/ SMD Package
･Soldering involves temperatures whichexceed the device storagetemperaturerating.To avoiddevice
damage andto ensurereliability, observe the following guidelines from the quality assurance standard.
Soldering temperature and duration (SMD Package)
Reflow-Soldering
Number of times Twice
Soldering Temp. &
Time 230℃，50sec
Package surface
Peak Temp. & Time 260℃，10sec
Soldering methods (SMD Package) Methods
Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Only terminal)
Infrared
Reflow Air
Reflow
Soldering
iron
(Re-work)
T-Pack(S) ××◎◎×
T-Pack(SJ) ××◎◎×
K-Pack(S) ××◎◎×
TFP ××◎◎×
◎：Possible ○：Limited to 1 time ×：Unable
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for the manufacturing purposes without the express written consent of
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RecommendedReflowprofile
Storage
･TheMOSFETsmustbestoredatastandardtemperature of5to35C and relative humidity of45to75%.
･Ifthestoragearea isverydry,a humidifiermayberequired.In suchacase,useonlydeionizedwateror
boiled water,since thechlorineintap watermaycorrodetheleads.
･TheMOSFETsshouldnotbesubjectedtorapidchanges intemperature toavoidcondensationon the
surfaceoftheMOSFETs. ThereforestoretheMOSFETsinaplacewhere thetemperatureissteady.
･TheMOSFETsshouldnotbestoredontopofeachother,sincethismaycauseexcessiveexternalforceon
the case.
･TheMOSFETsshouldbestoredwiththeleadterminalsremaining unprocessed.Rustmaycause
presolderedconnectionstofailduringlaterprocessing.
･TheMOSFETsshouldbestoredinantistaticcontainersorshippingbags.
11.Appendix
･ThisproductsdoesnotcontainPBBs(PolybrominatedBiphenyl)orPBDEs(PolybrominatedDiphenyl
Ether) ,substances.
･ThisproductsdoesnotcontainClass-IODS andClass-IIODSsubstancessetforceby ‘Clean Air Act of US’
law.
･Ifyouhaveanyquestions aboutanypartofthisSpecification,please contactFuji
Electricoritssalesagentbeforeusingtheproduct.
･NeitherFujinoritsagentsshall be heldliable foranyinjury causedbyusingtheproducts
notinaccordancewiththeinstructions.
･Theapplicationexamplesdescribedin this specificationaremerelytypical uses ofFuji
Electricproducts.
･Thisspecificationdoesnotconferanyindustrialpropertyrightsorotherrights,nor
constitutealicenseforsuchrights.
0
50
100
150
200
250
300
冷却/Post Cooling
-5℃/sec(max.)
4.5℃/sec(max.)
260℃(peak)
≦10sec
≧230℃
50sec(max.)
6℃/sec(max.)
予熱/Pre-heat
150〜180℃
60〜120sec
温度/Temperature [℃]
時間/time [sec]
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0 2 4 6 8 10
0
20
40
60
80
100
120
140
5V
20V 10V
6V
4.5V
VGS=4.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25 C
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
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0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
012345
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
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for the manufacturing purposes without the express written consent of
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0 10 20 30 40 50 60 70 80 90 100 110 120
0.00
0.01
0.02
0.03
0.04
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25 C
10V
20V
6V
5V4.5V
VGS=4V
-50 -25 0 25 50 75 100 125 150
0.00
0.01
0.02
0.03
0.04
RDS(on) [ ]
Tch [C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=40A,VGS=10V
DWG.NO.
H04-004-03
MS5F6118
18/22
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd. a
b
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VGS(th) [V]
Tch[C]
0 50 100 150 200
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=80A,Tch=25 C
VGS [V]
72V
48V
Vcc= 36V
DWG.NO.
H04-004-03
MS5F6118
19/22
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd. a
b
10-1 100101102103
101
102
103
104
105
C [pF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.0 0.5 1.0 1.5
0.1
1
10
100
1000
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25 C
DWG.NO.
H04-004-03
MS5F6118
20/22
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd. a
b
10-1 100101102103
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150 175 200
0
20
40
60
80
100
Repetitive
Non-Repetitive
(Single Pulse)
IAV [A]
starting Tch [C]
Maximum Avalanche Energyvs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
DWG.NO.
H04-004-03
MS5F6118
21/22
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd. a
b
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):startingTch=25 C,Vcc=48V
Avalanche Current IAV [A]
tAV [sec]
0 25 50 75 100 125 150
0
200
400
600
800
1000
IAS=32A
IAS=48A
IAS=80A
EAV [mJ]
starting Tch [C]
Maximum Avalanche Energyvs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=80A
DWG.NO.
H04-004-03
MS5F6118
22/22
This material and the information herein is the property of Fuji Electric
Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purposes without the express written consent of
Fuji Electric Device Technology Co.,Ltd.
FujiElectricDeviceTechnologyCo.,Ltd. a
b
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]