©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
2N6518
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
• Refer to 2N6520 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage -250 V
VCEO Collector-Emitter Voltage -250 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -500 mA
IBBase Current -250 mA
PCCollector Power Dissipation 625 mW
Derate above 25°C5mW/°C
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Tes t Condition Min. Max. Units
BVCBO * Collector-Base Breakdown Voltage IC= -100µA, IE=0 -250 V
BVCEO Collector-Emitt er Breakdown Voltage IC= -1mA, IB=0 -250 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -150V, IE=0 -50 nA
IEBO Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
hFE * DC Current Gain VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
35
50
50
45
25
300
220
VCE (sat) Collector -Emitter Saturation Voltage IC= -10 mA, IB= -1mA
IC= -20 m A, IB= -2mA
IC= -30 m A, IB= -3mA
IC= -50 m A, IB= -5mA
-0.30
-0.35
-0.50
-1
V
V
V
V
VBE (sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA
IC= -20 m A, IB= -2mA
IC= -30 m A, IB= -3mA
-0.75
-0.85
-0.90
V
V
V
VBE (on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V
fT* Current Gain Bandwidt h Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz
Cob Output Capacitanc e VCB= -20V, IE=0, f=1MHz 6 pF
CEB Emitter-Base Capacitance VEB= - 0.5V, IC= 0, f=1MHz 100 pF
tON Tu r n On Time V BE (off)= -2V, VCC= -100V
IC= -50 m A, IB1= -10mA 200 ns
tOFF Tu r n Off Ti me VCC= -100V, IC= -50m A
IB1=IB2=10mA 3.5 ns
2N6518
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -250V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6515
1. Emitter 2. Base 3. Collector
TO-92
1
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
2N6518
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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