ON Semiconductor NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS * High Safe Operating Area (100% Tested) -- * 2 A @ 80 V High DC Current Gain -- hFE = 15 (Min) @ IC = 8 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III MAXIMUM RATINGS Rating Symbol MJ15022 MJ15024 Unit Collector-Emitter Voltage VCEO 200 250 Vdc Collector-Base Voltage VCBO 350 400 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector-Emitter Voltage VCEX 400 Vdc Collector Current -- Continuous Peak (1) IC 16 30 Adc Base Current -- Continuous IB 5 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C TJ, Tstg -65 to +200 C Symbol Max Unit RJC 0.70 C/W Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 - Rev. 9 1 Publication Order Number: MJ15022/D MJ15022 MJ15024 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 200 250 -- -- -- -- 250 250 -- -- 500 500 -- 500 5 2 -- -- 15 5 60 -- -- -- 1.4 4.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0) VCEO(sus) MJ15022 MJ15024 Collector Cutoff Current (VCE = 200 Vdc, VBE(off) = 1.5 Vdc) (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15022 MJ15024 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 vdc, IB = 0) MJ15022 MJ15024 Adc ICEX Adc ICEO Emitter Cutoff Current (VCE = 5 Vdc, IB = 0) IEBO Adc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 0.5 s (non-repetitive)) (VCE = 80 Vdc, t = 0.5 s (non-repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (IC = 16 Adc, VCE = 4 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 8 Adc, VCE = 4 Vdc) VBE(on) -- 2.2 Vdc fT 4 -- MHz Cob -- 500 pF DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. IC, COLLECTOR CURRENT (AMPS) 100 50 There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values Ion than the limitations imposed by second breakdown. TC = 25C 20 10 5.0 BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1.0 0.2 0.1 0.1 0.2 20 0.5 10 50 100 250 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1k Figure 1. Active-Region Safe Operating Area http://onsemi.com 2 MJ15022 MJ15024 TJ = 25C Cib 1000 500 Cob f T, CURRENT-GAIN C, CAPACITANCE (pF) 4000 3000 BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 100 40 0.3 0.5 1 10 5.0 30 50 VR, REVERSE VOLTAGE (VOLTS) 100 300 9 7 6 5 4 3 2 1 0 0.1 TJ = 100C VCE = 4 V V, VOLTAGE (VOLTS) 20 10 10 1.4 1.0 0.8 5.0 VBE(on) @ VCE = 4 V TJ = 25C 100C 0.2 1.0 0.2 5.0 1.8 TJ = 25C 50 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 25C 0 0.15 20 VCE(sat) @ IC/IB = 10 100C 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) Figure 5. "On" Voltage Figure 4. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) hFE , DC CURRENT GAIN 100 0.3 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) Figure 3. Current-Gain -- Bandwidth Product Figure 2. Capacitances 200 TJ = 25C VCE = 10 V fTest = 1 MHz 8 1.8 TJ = 25C 1.4 1.0 16 A 0.6 0.2 0 0.03 8A IC = 4 A 0.1 0.2 0.5 1.0 2.0 5.0 IB, BASE CURRENT (AMPS) 10 Figure 6. Collector Saturation Region http://onsemi.com 3 30 10 20 MJ15022 MJ15024 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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