IXTA76P10T IXTP76P10T IXTH76P10T TrenchPTM Power MOSFET VDSS ID25 = = RDS(on) P-Channel Enhancement Mode Avalanche Rated - 100V - 76A 25m TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C - 100 V VDGR TJ = 25C to 150C, RGS = 1M - 100 V VGSS Continuous 15 V VGSM Transient 25 V DS ID25 TC = 25C - 76 A TO-247 (IXTH) IDM TC = 25C, Pulse Width Limited by TJM - 230 A IA EAS TC = 25C TC = 25C - 38 1 A J PD TC = 25C 298 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 1.13 /10 Nm/lb.in. 2.5 3.0 6.0 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G G D S G = Gate S = Source D (Tab) D (Tab) D = Drain Tab = Drain Features z International Standard Packages Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG z Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = - 250A -100 VGS(th) VDS = VGS, ID = - 250A - 2.0 IGSS VGS = 15V, VDS = 0V 100 nA IDSS VDS = VDSS, VGS = 0V - 15 A - 750 A RDS(on) TJ = 125C VGS = -10V, ID = 0.5 * ID25, Note 1 z z V - 4.0 V 25 m z Applications z z z z z z (c) 2010 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density High-Side Switching Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators Battery Charger Applications DS100024A(11/10) IXTA76P10T IXTP76P10T IXTH76P10T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = 0.5 * ID25, Note 1 35 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) 58 S 13.7 nF 890 pF 275 pF 25 ns 40 ns 52 ns 20 ns 197 nC 65 nC 65 nC Resistive Switching Times tr VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 1 (External) tf Qg(on) VGS = -10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgs Qgd 0.42 C/W RthJC TO-220 TO-247 RthCS 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = - 38A, VGS = 0V, Note 1 trr QRM IRM IF = - 38A, -di/dt = -100A/s VR = - 50V, VGS = 0V 1: Pins: 1 - Gate 2 - Drain 3 - Source C/W C/W Characteristic Values Min. Typ. Max. IS Note TO-247 Outline 70 215 -6 - 76 A - 304 A -1.3 V ns nC A TO-220 Outline Pulse test, t 300s, duty cycle, d 2%. TO-263 Outline Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA76P10T IXTP76P10T IXTH76P10T Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C -80 -280 VGS = -10V - 9V - 8V -70 -50 - 6V -40 - 8V -200 - 7V ID - Amperes ID - Amperes -60 -30 -160 - 7V -120 -80 -20 -10 - 6V - 5V -40 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 0 -2 -5 -10 -20 -25 -30 VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = - 38A vs. Junction Temperature 2.0 VGS = -10V - 9V - 8V - 7V -60 VGS = -10V 1.8 R DS(on) - Normalized -70 - 6V -50 -40 -30 - 5V -20 1.6 I D = - 76A I D = - 38A 1.4 1.2 1.0 0.8 -10 0 0.6 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 -2.8 -3.2 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 38A vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 -80 VGS = -10V 2.0 -70 TJ = 125C -60 1.8 ID - Amperes R DS(on) - Normalized -15 VDS - Volts -80 ID - Amperes VGS = -10V - 9V -240 1.6 1.4 1.2 TJ = 25C 1.0 -50 -40 -30 -20 -10 0 0.8 0 -40 -80 -120 -160 ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved -200 -240 -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 IXTA76P10T IXTP76P10T IXTH76P10T Fig. 7. Input Admittance Fig. 8. Transconductance 100 -140 TJ = - 40C -120 80 25C TJ = 125C 25C - 40C -80 g f s - Siemens ID - Amperes -100 -60 125C 60 40 -40 20 -20 0 -3.0 0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -20 -40 -60 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -100 -120 -140 -160 Fig. 10. Gate Charge -10 -240 VDS = - 50V -9 -200 I D = - 38A -8 I G = -1mA -7 VGS - Volts -160 IS - Amperes -80 ID - Amperes -120 TJ = 125C -80 -6 -5 -4 -3 TJ = 25C -2 -40 -1 0 -0.4 0 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 0 20 40 60 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 - 1,000 f = 1 MHz 10,000 - 100 Ciss ID - Amperes Capacitance - PicoFarads 1ms RDS(on) Limit 100s 25s 10ms 100ms DC - 10 1,000 Coss TJ = 150C TC = 25C Single Pulse Crss 100 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. -1 -1 - 10 VDS - Volts -100 IXTA76P10T IXTP76P10T IXTH76P10T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 44 44 RG = 1, VGS = -10V 40 40 t r - Nanoseconds t r - Nanoseconds VDS = - 50V 36 I 32 D = - 38A 28 I D TJ = 25C 36 RG = 1, VGS = -10V VDS = - 50V 32 28 = - 76A 24 TJ = 125C 24 20 20 25 35 45 55 65 75 85 95 105 115 125 -36 -40 -44 -48 -52 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 110 tf -72 70 80 50 td(off) - - - - 70 65 VDS = - 50V 21 60 20 55 I D = - 38A 19 50 I D = - 76A 18 45 t d(off) - Nanoseconds 120 22 t f - Nanoseconds I D = - 76A, - 38A 40 30 17 0 2 4 6 8 10 12 14 16 18 40 16 10 0 25 20 35 45 55 24 tf td(off) - - - - tf 160 50 19 46 TJ = 125C, 25C 18 42 17 38 16 34 -52 -56 -60 -64 ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved -68 -72 -76 t f - Nanoseconds 20 -48 115 35 125 td(off) - - - 240 VDS = - 50V I D = - 38A, - 76A 120 180 80 120 40 60 0 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 20 t d(off) - Nanoseconds 54 t d(off) - Nanoseconds 21 -44 105 TJ = 125C, VGS = -10V 58 VDS = - 50V -40 95 300 62 RG = 1, VGS = -10V -36 85 200 66 22 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 23 65 TJ - Degrees Centigrade RG - Ohms t f - Nanoseconds -76 RG = 1, VGS = -10V 90 t d(on) - Nanoseconds t r - Nanoseconds -68 75 23 VDS = - 50V -64 24 td(on) - - - - TJ = 125C, VGS = -10V 160 -60 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 200 tr -56 ID - Amperes IXTA76P10T IXTP76P10T IXTH76P10T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - C / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_76P10T(A6)11-08-10-A