TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
High-Fidelity Line-Out/HP Driver
D
75-mW Stereo Output
D
PC Power Supply Compatible
D
Pop Reduction Circuitry
D
Internal Mid-Rail Generation
D
Thermal and Short-Circuit Protection
D
Surface-Mount Packaging
D
Pin Compatible With TPA302
description
The TPA152 is a stereo audio power amplifier capable of less than 0.1% THD+N at 1 kHz when delivering
75 mW per channel into a 32-Ω load. THD+N is less than 0.2% across the audio band of 20 to 20 kHz. For
10 kΩ loads, the THD+N performance is better than 0.005% at 1 kHz, and less than 0.01% across the audio
band of 20 to 20 kHz.
The TP A152 is ideal for use as an output buffer for the audio CODEC in PC systems. It is also excellent for use
where a high-performance head phone/line-out amplifier is needed. Depop circuitry is integrated to reduce
transients during power up, power down, and mute mode.
Amplifier gain is externally configured by means of two resistors per input channel and does not require external
compensation for settings of 1 to 10. The TPA152 is packaged in the 8-pin SOIC (D) package that reduces board
space and facilitates automated assembly.
typical application circuit
Stereo
RLRL
CC
CC
VO1
VO2
BYPASS
IN2–
IN1–
CB
RF
RF
RI
RI
CI
CI
R
L
Stereo Audio
Input
Mute
Control
From System
Control
CB
VDD
4
3
2
1
8
6
5
Depop
Circuitry
–
–
+
+RC
RC
Copyright 2000, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
8
7
6
5
VO1
MUTE
BYPASS
IN2–
IN1–
GND
VDD
VO2
D PACKAGE
(TOP VIEW)
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
TA
PACKAGED DEVICE
T
ASMALL OUTLINE
–40°C to 85°C TPA152D†
†The D packages are available taped and reeled. T o
order a taped and reeled part, add the suffix R
(e.g., TPA152DR)
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME NO.
I/O
DESCRIPTION
BYPASS 3BYPASS is the tap to the voltage divider for internal mid-supply bias. This terminal should be connected to a 0.1-µF
to 1-µF capacitor.
GND 7GND is the ground connection.
IN1– 8 I IN1– is the inverting input for channel 1.
IN2– 4 I IN2– is the inverting input for channel 2.
MUTE 2 I A logic high puts the device into MUTE mode.
VDD 6 I VDD is the supply voltage terminal.
VO1 1 O VO1 is the audio output for channel 1.
VO2 5 O VO2 is the audio output for channel 1.
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)‡
Supply voltage, VDD 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage , VI –0.3 V to VDD + 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation internally limited (See Dissipation Rating Table). . . . . . . . . . . . . . . . . . . . .
Operating junction temperature range, TJ –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, TC –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
DISSIPATION RATING TABLE
PACKAGE TA ≤ 25°CDERATING FACTOR TA = 70°C TA = 85°C
D724 mW 5.8 mW/°C464 mW 376 mW
recommended operating conditions
MIN MAX UNIT
Supply voltage, VDD 4.5 5.5 V
Operating free-air temperature, TA–40 85 °C
dc electrical characteristics at TA = 25°C, VDD = 5 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VOO Output offset voltage 10 mV
Supply ripple rejection ratio VDD = 4.9 V to 5.1 V 81 dB
IDD Supply current See Figure 13 5.5 14 mA
IDD(MUTE) Supply current in MUTE 5.5 14 mA
ZIInput impedance >1 MΩ
ac operating characteristics VDD = 5 V, TA = 25°C, RL = 32 Ω (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POOutput power (each channel) THD ≤ 0.03%, Gain = 1, See Figure 1 75†mW
THD+N Total harmonic distortion plus noise PO = 75 mW, 20 Hz–20 kHz,Gain = 1,
See Figure 2 0.2%
BOM Maximum output power bandwidth AV = 5, THD <0.6%, See Figure 2 >20 kHz
Phase margin Open loop, See Figure 16 80°
Supply ripple rejection ratio 1 kHz, CB = 1 µF, See Figure 12 65 dB
Mute attenuation See Figure 15 110 dB
Ch/Ch output separation See Figure 13 102 dB
Signal-to-Noise ratio VO = 1 V(rms), Gain = 1 See Figure 11 104 dB
VnNoise output voltage See Figure 10 6µV(rms)
†Measured at 1 kHz.
NOTES: 1. The dc output voltage is approximately VDD/2.
2. Output power is measured at the output pins of the IC at 1 kHz.
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
ac operating characteristics VDD = 5 V, TA = 25°C, RL = 10 kΩ
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
THD+N
Total harmonic distortion
p
lus noise
VI = 1 V(rms), 20 Hz–20 kHz,Gain = 1,
See Figure 6 0.005%
THD
+
N
Total
harmonic
distortion
pl
u
s
noise
VO(PP) = 4 V, 20 Hz–20 kHz,Gain = 1,
See Figure 8 0.005%
BOM Maximum output power bandwidth G = 5, THD <0.02%, See Figure 6 >20 kHz
Phase margin Open loop, See Figure 16 80°
kSVR Supply voltage rejection ratio 1 kHz, CB = 1 µF, See Figure 12 65 dB
Mute attenuation See Figure 15 110 dB
Ch/Ch output separation See Figure 13 102 dB
Signal-to-Noise ratio VO = 1 V(rms), Gain = 1, See Figure 11 104 dB
VnNoise output voltage See Figure 10 6µV(rms)
†Measured at 1 kHz.
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
THD+N Total harmonic distortion plus noise vs Output power 1, 4
THD+N Total harmonic distortion plus noise vs Frequency 2, 3, 6, 8, 9
THD+N Total harmonic distortion plus noise vs Output voltage 5, 7
VnOutput noise voltage vs Frequency 10
SNR Signal-to-noise ratio vs Gain 11
Supply ripple rejection ratio vs Frequency 12
Crosstalk vs Frequency 13, 14
Mute Attenuation vs Frequency 15
Open-loop gain and phase vs Frequency 16, 17
Closed-loop gain and phase vs Frequency 18
IDD Supply current vs Supply voltage 19
POOutput power vs Load resistance 20
PDPower dissipation vs Output power 21
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 1
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
PO – Output Power – mW
1102030 60705040 80
0.1
0.01
0.001
1
2
90
f = 1 kHz
AV = –1 V/V
THD+N –Total Harmonic Distortion + Noise – %
Figure 2
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
PO = 75 mW
RL = 32 Ω
AV =– 2 V/V
AV = –5 V/V
AV = –1 V/V
0.1
0.01
0.001
1
2
THD+N –Total Harmonic Distortion + Noise – %
f – Frequency – Hz
20 100 1k 10k 20k
Figure 3
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
AV = –1 V/V
RL = 32 Ω
0.1
0.01
0.001
0.3
THD+N –Total Harmonic Distortion + Noise – %
f – Frequency – Hz
20 100 1k 10k 20k
PO = 75 mW
PO = 25 mW
PO = 50 mW
Figure 4
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT POWER
0.1
0.01
0.001
1
2
THD+N –Total Harmonic Distortion + Noise – %
0.1 1 10 100
RL = 32 Ω
20 kHz
1 kHz
20 Hz
PO – Output Power – mW
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT VOLTAGE
VO – Output Voltage – V(rms)
0 0.2 0.4 0.6 1.2 1.410.8 1.6
0.1
0.01
0.001
1
2
1.8
f = 1 kHz
AV = –1 V/V
RL = 10 kΩ
THD+N –Total Harmonic Distortion + Noise – %
Figure 6
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VO = 1 V(rms)
RL = 10 kΩ
AV = –5 V/V
0.01
0.001
0.1
THD+N –Total Harmonic Distortion + Noise – %
f – Frequency – Hz
20 100 1k 10k 20k
AV = –2 V/V
AV = –1 V/V
Figure 7
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
OUTPUT VOLTAGE
VO – Output Voltage – V(rms)
0.1 0.2 0.4 1 2
0.1
0.01
0.001
1
2AV = –1 V/V
RL = 10 kΩ
THD+N –Total Harmonic Distortion + Noise – %
f = 20 kHz
f = 20 Hz
f = 1 kHz
Figure 8
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VO(PP) = 4 V
AV = –1 V/V
RL = 10 kΩ
0.01
0.001
0.1
THD+N –Total Harmonic Distortion + Noise – %
f – Frequency – Hz
20 100 1k 10k 20k
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 9
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
VI = 1 V(rms)
AV = –1 V/V
0.01
0.001
0.1
THD+N –Total Harmonic Distortion + Noise – %
f – Frequency – Hz
20 100 1k 10k 20k
RL = 32 Ω
RL = 10,47, and 100 kΩ
Figure 10
OUTPUT NOISE VOLTAGE
vs
FREQUENCY
VDD = 5 V
BW = 10 Hz to 22 kHz
RL = 32 Ω to 10 kΩ
AV = –1 V/V
10
1
20
f – Frequency – Hz
20 100 1k 10k 20k
– Output Noise Voltage – VµVn
Figure 11
Gain – V/V
SIGNAL-TO-NOISE RATIO
vs
GAIN
1234 7865
105
95
85
80
100
90
110
9
RL = 10 kΩ
SNR – Signal-to-Noise Ratio – dB
10
RI = 20 kΩ
RL = 32 Ω
Figure 12
Supply Ripple Rejection Ratio – dB
SUPPLY RIPPLE REJECTION RATIO
vs
FREQUENCY
f – Frequency – Hz
20 100 1k 10k 20k
–50
–70
–90
–100
–60
–80
0
–20
–40
–10
–30
VDD = 5 V
RL = 32 Ω to 10 kΩ
CB = 0.1 µF
CB = 1 µF
CB = 2.5 V
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
8POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 13
Crosstalk – dB
CROSSTALK
vs
FREQUENCY
f – Frequency – Hz
20 100 1k 10k 20k
–90
–120
–100
–110
–60
–70
–80
PO = 75 mW
VDD = 5 V
RL = 32 Ω
CB = 1 µF
AV = –1 V/V
Right to Left
Left to Right
Figure 14
Crosstalk – dB
CROSSTALK
vs
FREQUENCY
f – Frequency – Hz
20 100 1k 10k 20k
–90
–130
–100
–110
–60
–70
–80
VO = 1 V
VDD = 5 V
RL = 10 kΩ
CB = 1 µF
AV = –1 V/V
Right to Left
Left to Right
–120
Mute Attenuation – dB
MUTE ATTENUATION
vs
FREQUENCY
f – Frequency – Hz
20 100 1k 10k 20k
–100
–140
–110
–120
–70
–80
90
VDD = 5 V
RL = 32Ω
CB = 1 µF
–130
Figure 15
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 16
OPEN-LOOP GAIN AND PHASE
vs
FREQUENCY
60
20
–20 10k 1M
f – Frequency – Hz
80
40
0
100k 10M 100M1k
Open-Loop Gain – dB
100
20
0
40
Phase – °
60
80
No Load
100
120
140
160
100
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
–0.2
–0.6
–1 10k 1M
f – Frequency – Hz
0
–0.4
–0.8
100k1k
Closed-Loop Gain – dB
0.2
160
155
165
Phase – °
170
175
180
185
10
RI = 20 kΩ
Rf = 20 kΩ
RL = 32 Ω
CI = 1 µF
AV = –1 V/V
0.6
0.8
0.4
1
100
Figure 17
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
CLOSED-LOOP GAIN AND PHASE
vs
FREQUENCY
–0.2
–0.6
–1 10k 1M
f – Frequency – Hz
0
–0.4
–0.8
100k1k
Closed-Loop Gain – dB
0.2
160
155
165
Phase – °
170
175
180
185
10
RI = 20 kΩ
Rf = 20 kΩ
RL = 10 kΩ
CI = 1 µF
AV = –1 V/V
0.6
0.8
0.4
1
100
Figure 19
VDD – Supply Voltage – V
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
9
7
5
35
8
6
4
5.5
10
4.5
IDD – Supply Current – mA
Figure 20
RL – Load Resistance – Ω
OUTPUT POWER
vs
LOAD RESISTANCE
30 50 70 90 150 170130110 190
70
50
30
10
60
40
20
90
80
210
THD+N = 0.1%
AV = –1 V/V
– Output Power – mWPO
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 21
POWER DISSIPATION
vs
OUTPUT POWER
100
80
40
0
60
20
0 5 10 15
PO – Output Power – mW 2520
PD– Power Dissipation – mW
RL = 32 Ω
APPLICATION INFORMATION
selection of components
Figure 22 is a schematic diagram of a typical application circuit.
8
7
6
5
GND
VDD
IN1–
4
1
2
3
VO1
MUTE
IN2–
RI
20 kΩ
Audio Input 1
CI
1 µF
IN2
VO2
RF
20 kΩ
Shutdown
(from System Control)
RI
20 kΩ
Audio Input 2
CI
1 µF
RF
20 kΩ
CC
330 µF
RC†
100 Ω
CC
330 µF
VDD
1 µFHP
Jack
RL
32 ΩRL
32 Ω
CB
1 µF
RO†
20 kΩ
RC†
100 Ω
RO†
20 kΩ
†These resistors are optional. Adding these resistors improves the depop performance of the TPA152.
Figure 22. TPA152 Typical Application Circuit
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
gain setting resistors, RF and RI
The gain for the TPA152 is set by resistors RF and RI according to equation 1.
(1)
Gain
+*
ǒ
RF
RI
Ǔ
Given that the TPA152 is a MOS amplifier, the input impedance is very high, consequently input leakage
currents are not generally a concern although noise in the circuit increases as the value of RF increases. In
addition, a certain range of RF values are required for proper start-up operation of the amplifier . Taken together
it is recommended that the effective impedance seen by the inverting node of the amplifier be set between 5
kΩ and 20 kΩ. The effective impedance is calculated in equation 2.
(2)
Effective Impedance
+
RFRI
RF
)
RI
As an example, consider an input resistance of 20 kΩ and a feedback resistor of 20 kΩ. The gain of the amplifier
would be –1 and the effective impedance at the inverting terminal would be 10 kΩ, which is within the
recommended range.
For high performance applications, metal film resistors are recommended because they tend to have lower
noise levels than carbon resistors. For values of RF above 50 kΩ, the amplifier tends to become unstable due
to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small
compensation capacitor of approximately 5 pF should be placed in parallel with RF. This, in effect, creates a
low-pass filter network with the cutoff frequency defined in equation 3.
(3)
fc(lowpass)
+
1
2
p
RFCF
For example if RF is 100 kΩ and CF is 5 pF then fco(lowpass) is 318 kHz, which is well outside the audio range.
input capacitor, CI
In the typical application, an input capacitor, CI, is required to allow the amplifier to bias the input signal to the
proper dc level for optimum operation. In this case, CI and RI form a high-pass filter with the corner frequency
determined in equation 4.
(4)
fc(highpass)
+
1
2
p
RICI
The value of CI is important to consider as it directly affects the bass (low frequency) performance of the circuit.
Consider the example where RI is 20 kΩ and the specification calls for a flat bass response down to 20 Hz.
Equation 4 is reconfigured as equation 5.
(5)
CI
+
1
2
p
RIfc(highpass)
In this example, CI is 0.40 µF, so one would likely choose a value in the range of 0.47 µF to 1 µF. A further
consideration for this capacitor is the leakage path from the input source through the input network (RI, CI) and
the feedback resistor (RF) to the load. This leakage current creates a dc offset voltage at the input to the amplifier
that reduces useful headroom, especially in high-gain applications (> 10). For this reason a low-leakage
tantalum or ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the
capacitor should face the amplifier input in most applications, as the dc level there is held at VDD/2, which is
likely higher that the source dc level. Please note that it is important to confirm the capacitor polarity in the
application.
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
power supply decoupling, CS
The TPA152 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to
ensure that the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also
prevents oscillations for long lead lengths between the amplifier and the speaker. The optimum decoupling is
achieved by using two capacitors of different types that target different types of noise on the power supply leads.
For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance
(ESR) ceramic capacitor, typically 0.1 µF, placed as close as possible to the device VDD lead, works best. For
filtering lower-frequency noise signals, a larger aluminum electrolytic capacitor of 10 µF or greater placed near
the power amplifier is recommended.
midrail bypass capacitor, CB
The midrail bypass capacitor, CB, serves several important functions. During startup or recovery from shutdown
mode, CB determines the rate at which the amplifier starts up. This helps to push the start-up pop noise into
the subaudible range (so slow it can not be heard). The second function is to reduce noise produced by the
power supply caused by coupling into the output drive signal. This noise is from the midrail generation circuit
internal to the amplifier . The capacitor is fed from a 160-kΩ source inside the amplifier. To keep the start-up pop
as low as possible, the relationship shown in equation 6 should be maintained.
(6)
1
ǒ
CB
160 kΩ
Ǔv
1
ǒ
CIRI
Ǔ
As an example, consider a circuit where CB is 1 µF, CI is 1 µF and RI is 20 kΩ. Inserting these values into the
equation 9 results in:
6.25
v
50
which satisfies the rule. Bypass capacitor, CB, values of 0.1 µF to 1 µF ceramic or tantalum low-ESR capacitors
are recommended for the best THD and noise performance.
output coupling capacitor, CC
In the typical single-supply single-ended (SE) configuration, an output coupling capacitor (CC) is required to
block the dc bias at the output of the amplifier thus preventing dc currents in the load. As with the input coupling
capacitor, the output coupling capacitor and impedance of the load form a high-pass filter governed by
equation 7.
(7)
fc(high)
+
1
2
p
RLCC
The main disadvantage, from a performance standpoint, is that the load impedances are typically small, which
drive the low-frequency corner higher. Large values of CC are required to pass low frequencies into the load.
Consider the example where a CC of 68 µF is chosen and loads vary from 32 Ω to 47 kΩ. Table 1 summarizes
the frequency response characteristics of each configuration.
TPA152
75-mW STEREO AUDIO POWER AMPLIFIER
SLOS210A – JUNE 1998 – REVISED MARCH 2000
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
Table 1. Common Load Impedances vs Low Frequency Output Characteristics in SE Mode
RLCCLOWEST FREQUENCY
32 Ω68 µF73 Hz
10,000 Ω68 µF0.23 Hz
47,000 Ω68 µF0.05 Hz
As Table 1 indicates, headphone response is adequate and drive into line level inputs (a home stereo for
example) is very good.
The output coupling capacitor required in single-supply SE mode also places additional constraints on the
selection of other components in the amplifier circuit. With the rules described earlier still valid, add the following
relationship:
(8)
1
ǒ
CB
160 kΩ
Ǔv
1
ǒ
CIRI
ǓƠ
1
RLCC
output pull-down resistor, RC + RO
Placing a 100-Ω resistor, RC, from the output side of the coupling capacitor to ground insures the coupling
capacitor, CC, is charged before a plug is inserted into the jack. Without this resistor, the coupling capacitor
would charge rapidly upon insertion of a plug, leading to an audible pop in the headphones.
Placing a 20-kΩ resistor, RO, from the output of the IC to ground insures that the coupling capacitor fully
discharges at power down. If the supply is rapidly cycled without this capacitor, a small pop may be audible in
10-kΩ loads.
using low-ESR capacitors
Low-ESR capacitors are recommended throughout this applications section. A real capacitor can be modeled
simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the
beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance, the more the
real capacitor behaves like an ideal capacitor.
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
TPA152D ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPA152DG4 ACTIVE SOIC D 8 75 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPA152DR ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TPA152DRG4 ACTIVE SOIC D 8 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 20-Apr-2006
Addendum-Page 1
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TPA152DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPA152DR SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All
semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time
of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components which meet ISO/TS16949 requirements, mainly for automotive use. Components which
have not been so designated are neither designed nor intended for automotive use; and TI will not be responsible for any failure of such
components to meet such requirements.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Mobile Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2012, Texas Instruments Incorporated
