ATTENUATORS - ANALOG - CHIP
1
1 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC346
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
v04.1008
General Description
Features
Functional Diagram
Wide Bandwidth: DC - 20 GHz
Low Phase Shift vs. Attenuation
32 dB Attenuation Range
Die Size: 0.85 x 0.85 x 0.1 mm
Electrical Speci cations, TA = +25° C, 50 ohm system
Typical Applications
This attenuator is ideal for use as a VVA
for DC - 20 GHz applications:
• Point-to-Point Radio
• VSAT Radio
The HMC346 die is an absorptive Voltage Variable
Attenuator (VVA) operating from DC - 20 GHz. It
features an on-chip reference attenuator for use
with an external op-amp to provide simple single
voltage attenuation control, 0 to -3V. The device is
ideal in designs where an analog DC control signal
must control RF signal levels over a 30 dB amplitude
range. For plastic packaged version, see the
HMC346MS8G which operates from DC - 8 GHz.
Parameter Min. Typ. Max. Units
Insertion Loss DC - 12 GHz:
DC - 20 GHz:
1.7
2.2
2.3
2.8
dB
dB
Attenuation Range DC - 12 GHz:
DC - 20 GHz:
27
22
32
25
dB
dB
Return Loss DC - 12 GHz:
12 - 20 GHz:
6
10
10
15
dB
dB
Switching Characteristics tRISE, tFALL (10/90% RF):
tON, tOFF (50% CTL to 10/90% RF):
2
8
ns
ns
Input Power for 0.25 dB Compression (0.5 - 20
GHz)
Min. Atten:
Atten. >2 dB:
+8
+4
dBm
dBm
Input Third Order Intercept (0.5 - 20 GHz)
(Two-tone Input Power = -8 dBm Each Tone)
Min. Atten:
Atten. >2 dB:
+25
+10
dBm
dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Relative Attenuation
Relative Attenuation vs.
Control Voltage @ 10 GHz
Insertion Loss vs. Temperature
Return Loss vs. Attenuation
Relative Phase
Relative Attenuation vs.
Control Voltage @ 20 GHz
-4
-3.5
-3
-2.5
-2
-1.5
-1
-0.5
0
0 5 10 15 20 25
+25 C
-55 C
+85 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-40
-35
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25
ATTENUATION (dB)
FREQUENCY (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0 5 10 15 20 25
MIN
5 dB
MAX
RETURN LOSS (dB)
FREQUENCY (GHz)
-3
-2.5
-2
-1.5
-1
-0.5
0
0 5 10 15 20 25 30
V1 +25 C
V1 -55 C
V1 +85 C
V2 +25 C
V2 -55 C
V2 +85 C
CONTROL VOLTAGE (Vdc)
RELATIVE ATTENUATION (dB)
0
40
80
120
160
200
240
0 5 10 15 20 25
5 dB
10 dB
15 dB
20 dB
25 dB
30 dB
MAX
RELATIVE PHASE (DEG)
FREQUENCY (GHz)
-3
-2.5
-2
-1.5
-1
-0.5
0
0 5 10 15 20 25
V1 +25 C
V1 -55 C
V1 +85 C
V2 +25 C
V2 -55 C
V2 +85 C
CONTROL VOLTAGE (Vdc)
RELATIVE ATTENUATION (dB)
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
*Two-tone input power = -8 dBm each tone, 1 MHz spacing.
Input 0.25 dB
Compression vs. Attenuation Input 1 dB Compression vs. Attenuation
Second Harmonic vs. Attenuation*
Input IP3 vs. Attenuation* Input IP2 vs. Attenuation*
Absolute Maximum Ratings
RF Input Power +18 dBm
Control Voltage Range +1 to -5 Vdc
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ESD Sensitivity (HBM) Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
0
5
10
15
20
25
30
0 5 10 15 20
0 dB
3 dB
6 dB
10 dB
IP3 (dBm)
FREQUENCY (GHz)
10
20
30
40
50
60
70
0 5 10 15 20
0 dB
3 dB
6 dB
10 dB
IP2 (dBm)
FREQUENCY (GHz)
-10
-5
0
5
10
15
0 5 10 15 20
0 dB (REF)
6 dB
0.25 dB (dBm)
FREQUENCY (GHz)
-5
0
5
10
15
20
0 5 10 15 20
0 dB (REF)
6 dB
P1dB (dBm)
FREQUENCY (GHz)
20
30
40
50
60
70
80
0 5 10 15 20
0 dB
3 dB
6 dB
10 dB
SECOND HARMONIC (dBc)
FREQUENCY (GHz)
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
1. ALL DIMENSIONS ARE IN INCHES (MILLIMETERS).
2. TYPICAL BOND PAD IS .004” SQUARE.
3. TYPICAL BOND PAD SPACING IS .006” CENTER TO
CENTER EXCEPT AS NOTED.
4. BACKSIDE METALIZATION: GOLD
5. BACKSIDE METAL IS GROUND
6. BOND PAD METALIZATION: GOLD
Pad Number Function Description Interface Schematic
1, 2 RF1 Input,
RF2 Output
This pad is DC coupled and matched to 50 Ohm.
Blocking capacitors are required if RF line potential
is not equal to 0V.
3, 6 V2, V1 Control Input (Master).
4 I Control Input (Slave).
5 500 This pad must be DC grounded.
GND Die bottom must be connected to RF ground.
Pad Descriptions
Die Packaging Information [1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
External op-amp control circuit maintains
impedance match while attenuation is varied.
Input control ranges from 0 Volts (min.
attenuation) to -3.0 Volts (max. attenuation.)
Single-Line Control Driver
Assembly Diagram
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
ATTENUATORS - ANALOG - CHIP
1
1 - 7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin lm substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin lm substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accom-
plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protec-
tive containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom-
mended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC346
v04.1008
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, DC - 20 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
