2SK3609-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Symbol Foot Print Pattern Ratings Unit V 200 V 170 A Continuous drain current 18 A 2.7 ** A Pulsed drain current ID(puls] 72 V Gate-source voltage VGS 30 A Non-repetitive Avalanche current IAS *2 18 mJ Maximum Avalanche Energy EAS *1 125.5 kV/s Maximum Drain-Source dV/dt dVDS/dt *4 20 kV/s Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Tc=25C 105 W Ta=25C 2.4 ** Operating and storage Tch +150 C temperature range Tstg C -55 to +150 ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) *1 L=620H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch < =150C *3 IF < = BVDSS, Tch < = 150C *4 VDS < = -ID, -di/dt=50A/s, Vcc < = 200V *5 VGS=-30V Drain-source voltage V DS VDSX *5 ID Tc=25C Ta=25C Equivalent circuit schematic D : Drain G : Gate S1 : Source S2 : Source Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions VGS=0V ID= 250A ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=6.5A VGS=10V Typ. 200 3.0 Tch=25C Tch=125C ID=6.5A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=6.5A VGS=10V 5.5 RGS=10 V CC =100V ID=13A VGS=10V L=620H Tch=25C IF=13A VGS=0V Tch=25C IF=13A VGS=0V -di/dt=100A/s Tch=25C 10 131 11 770 110 5 12 2.6 22 6.1 21 8 5 Max. 5.0 25 250 100 170 1155 165 7.5 18 3.9 33 9.2 31.5 12 7.5 18 1.10 0.15 0.88 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) ** Test Conditions channel to case channel to ambient channel to ambient Min. Typ. Max. 1.191 87.0 52.0 Units C/W C/W C/W ** Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area : 500mm2) www.fujielectric.co.jp/denshi/scd http://store.iiic.cc/ 1 2SK3609-01 FUJI POWER MOSFET Characteristics Allowable Power Dissipation PD=f(Tc) 120 5 Allowable Power Dissipation PD=f(Tc) Surface mounted on 2 1000mm ,t=1.6mm FR-4 PCB 100 2 (Drain pad area : 500mm ) 4 80 PD [W] PD [W] 3 60 2 40 1 20 0 0 0 25 50 75 100 125 150 0 25 50 Tc [C] 400 100 125 150 Typical Output Characteristics Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V ID=f(VDS):80s Pulse test,Tch=25C 40 20V 35 350 10V IAS=7A 8V 300 ID [A] 250 EAS [mJ] 75 Tc [C] IAS=11A 200 30 7.5V 25 7.0V 20 6.5V 150 15 IAS=18A 100 10 50 5 6.0V VGS=5.5V 0 0 0 25 50 75 100 125 0 150 2 4 6 8 10 12 VDS [V] starting Tch [C] Typical Transconductance Typical Transfer Characteristic gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 10 10 gfs [S] ID[A] 100 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 VGS[V] 1 10 100 ID [A] http://store.iiic.cc/ 2 2SK3609-01 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6.5A,VGS=10V Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 500 0.40 VGS= 6.0V 5.5V 0.35 6.5V 450 7.0V 400 RDS(on) [ ] 8V 10V 0.25 20V 0.20 350 RDS(on) [ m ] 7.5V 0.30 0.15 300 250 max. 200 150 typ. 0.10 100 0.05 50 0 0.00 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 Tch [C] ID [A] Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A Typical Gate Charge Characteristics VGS=f(Qg):ID=13A, Tch=25C 7.0 6.5 14 6.0 12 5.5 max. 10 4.5 4.0 VGS [V] VGS(th) [V] 5.0 3.5 3.0 min. 8 Vcc= 100V 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 0 -50 -25 0 25 50 75 100 125 150 0 10 20 Tch [C] 30 40 Qg [nC] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 0 Ciss 10 Coss 10 IF [A] -1 C [nF] 10 1 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VSD [V] VDS [V] http://store.iiic.cc/ 3 2SK3609-01 FUJI POWER MOSFET Typical Switching Characteristics vs. ID 10 t=f(ID):Vcc=48V, VGS=10V, RG=10 3 Thermal Resistance vs. Drain Pad area t=1.6mm FR-4 PCB 100 tf 2 t [ns] 10 Rth(ch-a) [C/W] 90 td(off) td(on) 10 80 70 60 50 40 1 30 20 tr 10 10 0 0 10 -1 10 0 10 1 10 0 2 1000 2000 3000 4000 5000 2 Drain Pad Area [mm ] Avalanche Current I AV [A] ID [A] 10 2 10 1 10 0 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4