IDT70V7599S166BF - Integrated Device Technology

JANUARY 2009

DSC 5626/6

1



Functional Block Diagram

Features:

◆128K x 36 Synchronous Bank-Switchable Dual-ported

SRAM Architecture

–64 independent 2K x 36 banks

– 4 megabits of memory on chip

◆Bank access controlled via bank address pins

◆High-speed data access

– Commercial: 3.4ns (200MHz)/3.6ns (166MHz)/

4.2ns (133MHz) (max.)

– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

◆Selectable Pipelined or Flow-Through output mode

◆Counter enable and repeat features

◆Dual chip enables allow for depth expansion without

additional logic

◆Full synchronous operation on both ports

– 5ns cycle time, 200MHz operation (14Gbps bandwidth)

– Fast 3.4ns clock to data out

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

◆Separate byte controls for multiplexed bus and bus

matching compatibility

◆LVTTL- compatible, 3.3V (±150mV) power supply

for core

◆LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

◆Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

◆Available in a 208-pin Plastic Quad Flatpack (PQFP),

208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball

Grid Array (BGA)

◆Supports JTAG features compliant with IEEE 1149.1

HIGH-SPEED 3.3V 128K x 36

SYNCHRONOUS

BANK-SWITCHABLE

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

IDT70V7599S

2Kx36

MEMORY

ARRAY

(BANK 63)

MUX

PL/FT

L

OPT

L

CLK

L

ADS

L

CNTEN

L

REPEAT

L

R/W

L

CE

0L

CE

1L

BE

3L

BE

2L

BE

1L

BE

0L

OE

L

I/O

0L-35L

A

10L

A

0L

JTAG

2Kx36

MEMORY

ARRAY

(BANK 1)

MUX

2Kx36

MEMORY

ARRAY

(BANK 0)

MUX

CONTROL

LOGIC

I/O

CONTROL

BANK

DECODE

ADDRESS

DECODE

I/O

0R-35R

A

10R

A

0R

CONTROL

LOGIC

I/O

CONTROL

BANK

DECODE

ADDRESS

DECODE

5626 drw 01

BA

5R

BA

4R

BA

3R

BA

2R

BA

1R

BA

0R

BA

5L

BA

4L

BA

3L

BA

2L

BA

1L

BA

0L

,

PL/FT

R

OPT

R

CLK

R

ADS

R

CNTEN

R

REPEAT

R

R/W

R

CE

0R

CE

1R

BE

3R

BE

2R

BE

1R

BE

0R

OE

R

TMS

TCK

TRST

TDI

TDO

NOTE:

1. The Bank-Switchable dual-port uses a true SRAM

core instead of the traditional dual-port SRAM core.

As a result, it has unique operating characteristics.

Please refer to the functional description on page 19

for details.

6.42

2

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

Description:

The IDT70V7599 is a high-speed 128Kx36 (4Mbit) synchronous

Bank-Switchable Dual-Ported SRAM organized into 64 independent

2Kx36 banks. The device has two independent ports with separate

control, address, and I/O pins for each port, allowing each port to access

any 2Kx36 memory block not already accessed by the other port.

Accesses by the ports into specific banks are controlled via the bank

address pins under the user's direct control.

Registers on control, data, and address inputs provide minimal setup

and hold times. The timing latitude provided by this approach allows

systems to be designed with very short cycle times. With an input data

Pin Configuration(1,2,3,4)

NOTES:

1. All VDD pins must be connected to 3.3V power supply.

2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is

set to VIL (0V).

3. All VSS pins must be connected to ground supply.

4. Package body is approximately 15mm x 15mm x 1.4mm with 0.8mm ball pitch.

5. This package code is used to reference the package diagram.

6. This text does not indicate orientation of the actual part-marking.

A17

V

SS

B17

I/O

15R

C17

V

SS

D17

I/O

14R

E16

V

SS E17

I/O

13L

D16

I/O

14L

C16

I/O

15L

B16

I/O

16L

A16

I/O

17L

A15

OPT

L

B15

V

DDQR

C15

I/O

16R

D15

V

DDQL

E15

I/O

13R

E14

I/O

12L

D14

I/O

17R

D13

V

DD

C12

A

6L C14

V

DD

B14

V

SS

A14

A

0L

A12

CNTEN

L

B12

A

5L

C11

R/W

L

D12

A

3L

D11

REPEAT

L

C10

V

SS

B11

ADS

L

A11

CLK

L

D8

BE

0L

C8

BE

3L

A9

BE

1L

D9

V

DD

C9

CE

1L

B9

CE

0L

D10

OE

L

C7

A

10L

B8

BE

2L

A8

A

8L

B13

A

1L

A13

A

4L

A10

V

DD

D7

A

7L

B7

A

9L

A7

BA

1L

B6

BA

2L

C6

BA

3L

D6

BA

0L

A5

NC

B5

NC

C5

NC

D5

BA

4L

A4

TDO

B4

TDI

C4

PL/

FT

L

D4

I/O

20L

A3

V

SS

B3

I/O

18R

C3

V

DDQR

D3

I/O

21L

D2

V

SS

C2

I/O

19R

B2

V

SS

A2

IO

18L

A1

IO

19L

B1

I/O

20R

C1

V

DDQL

D1

I/O

22L

E1

I/O

23L E2

I/O

22R E3

V

DDQR E4

I/O

21R

F1

V

DDQL F2

I/O

23R F3

I/O

24L F4

V

SS

G1

I/O

26L G2

V

SS G3

I/O

25L

G4

I/O

24R

H1

V

DD H2

I/O

26R

H3

V

DDQR H4

I/O

25R

J1

V

DDQL J2

V

DD

J3

V

SS

J4

V

SS

K1

I/O

28R

K2

V

SS K3

I/O

27R

K4

V

SS

L1

I/O

29R L2

I/O

28L

L3

V

DDQR L4

I/O

27L

M1

V

DDQL M2

I/O

29L M3

I/O

30R M4

V

SS

N1

I/O

31L N2

V

SS N3

I/O

31R

N4

I/O

30L

P1

I/O

32R P2

I/O

32L P3

V

DDQR P4

I/O

35R

R1

V

SS R2

I/O

33L R3

I/O

34R R4

TCK

T1

I/O

33R

T2

I/O

34L T3

V

DDQL T4

TMS

U1

V

SS U2

I/O

35L U3

PL/

FT

RU4

NC

P5

TRST

R5

NC

U6

BA

0R

P12

CNTEN

R

P8

A

8R

U10

OE

R

P9

BE

1R

R8

BE

2R

T8

BE

3R

U9

V

DD

P10

V

DD

T11

R/W

R

U8

BE

0R

P11

CLK

R

R12

A

5R

T12

A

6R

U12

A

3R

P13

A

4R

P7

BA

1R

R13

A

1R

T13

A

2R

U13

A

0R

R6

BA

2R

T5

NC

U7

A

7R U14

V

DD

T14

V

SS

R14

V

SS

P14

I/O

2L P15

I/O

3L

R15

V

DDQL

T15

I/O

0R

U15

OPT

R

U16

I/O

0L

U17

I/O

1L

T16

V

SS T17

I/O

2R

R17

V

DDQR

R16

I/O

1R

P17

I/O

4L

P16

V

SS

N17

I/O

5L

N16

I/O

4R

N15

V

DDQL

N14

I/O

3R

M17

V

DDQR

M16

I/O

5R

M15

I/O

6L

M14

V

SS

L17

I/O

8L

L16

V

SS

L15

I/O

7L

L14

I/O

6R

K17

V

SS

K16

I/O

8R

K15

V

DDQL

K14

I/O

7R

J17

V

DDQR

J16

V

SS

J15

V

DD

J14

V

SS

H17

I/O

10R

H16

V

SS

H15

IO

9R

H14

V

DD

G17

I/O

11R

G16

I/O

10L

G15

V

DDQL

G14

I/O

9L

F17

V

DDQR

F16

I/O

11L

F14

V

SS

70V7599BF

BF-208

(5)

208-Pin fpBGA

Top View

(6)

F15

I/O

12R

R9

CE

0R R11

ADS

R

T6

BA

3R

T9

CE

1R

A6

BA

5L

B10

V

SS

C13

A

2L

P6

BA

5R

R10

V

SS

R7

A

9R

T10

V

SS

T7

A

10R

U5

BA

4R

5626 drw 02c ,

1

1/08/01

register, the IDT70V7599 has been optimized for applications having

unidirectional or bidirectional data flow in bursts. An automatic power down

feature, controlled by CE0 and CE1, permits the on-chip circuitry of each

port to enter a very low standby power mode. The dual chip enables also

facilitate depth expansion.

The 70V7599 can support an operating voltage of either 3.3V or 2.5V

on one or both ports, controllable by the OPT pins. The power supply for

the core of the device(VDD) remains at 3.3V. Please refer also to the

functional description on page 19.

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

3

Pin Configuration(1,2,3,4) (con't.)

NOTES:

1. All VDD pins must be connected to 3.3V power supply.

2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is

set to VIL (0V).

3. All VSS pins must be connected to ground supply.

4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch.

5. This package code is used to reference the package diagram.

6. This text does not indicate orientation of the actual part-marking.

70V7599BC

BC-256(5)

256-Pin BGA

Top View (6)

E16

I/O

14R

D16

I/O

16R

C16

I/O

16L

B16

NC

A16

NC

A15

NC

B15

I/O

17L

C15

I/O

17R

D15

I/O

15L

E15

I/O

14L

E14

I/O

13L

D14

I/O

15R

D13

V

DD

C12

A

6L C14

OPT

L

B14

V

DD

A14

A

0L

A12

A

5L

B12

A

4L

C11

ADS

L

D12

V

DDQR

D11

V

DDQR

C10

CLK

L

B11

REPEAT

L

A11

CNTEN

L

D8

V

DDQR

C8

BE

1L

A9

CE

1L

D9

V

DDQL

C9

BE

0L

B9

CE

0L

D10

V

DDQL

C7

A

7L

B8

BE

3L

A8

BE

2L

B13

A

1L

A13

A

2L

A10

OE

L

D7

V

DDQR

B7

A

9L

A7

A

8L

B6

BA

1L

C6

A

10L

D6

V

DDQL

A5

BA

3L

B5

BA

4L

C5

BA

2L

D5

V

DDQL

A4

NC

B4

NC

C4

BA

5L

D4

PL/

FT

L

A3

NC

B3

TDO

C3

V

SS

D3

I/O

20L

D2

I/O

19R

C2

I/O

19L

B2

NC

A2

TDI

A1

NC

B1

I/O

18L

C1

I/O

18R

D1

I/O

20R

E1

I/O

21R E2

I/O

21L E3

I/O

22L E4

V

DDQL

F1

I/O

23L F2

I/O

22R F3

I/O

23R F4

V

DDQL

G1

I/O

24R G2

I/O

24L G3

I/O

25L

G4

V

DDQR

H1

I/O

26L H2

I/O

25R

H3

I/O

26R H4

V

DDQR

J1

I/O

27L J2

I/O

28R J3

I/O

27R J4

V

DDQL

K1

I/O

29R

K2

I/O

29L K3

I/O

28L

K4

V

DDQL

L1

I/O

30L L2

I/O

31R

L3

I/O

30R L4

V

DDQR

M1

I/O

32R M2

I/O

32L M3

I/O

31L M4

V

DDQR

N1

I/O

33L N2

I/O

34R N3

I/O

33R

N4

PL/

FT

R

P1

I/O

35R P2

I/O

34L P3

TMS

P4

BA

5R

R1

I/O

35L R2

NC

R3

TRST

R4

NC

T1

NC

T2

TCK

T3

NC

T4

NC

P5

BA

2R

R5

BA

4R

P12

A

6R

P8

BE

1R P9

BE

0R

R8

BE

3R

T8

BE

2R

P10

CLK

R

T11

CNTEN

R

P11

ADS

R

R12

A

4R

T12

A

5R

P13

A

3R

P7

A

7R

R13

A

1R

T13

A

2R

R6

BA

1R

T5

BA

3R T14

A

0R

R14

OPT

R

P14

I/O

0L P15

I/O

0R

R15

NC

T15

NC

T16

NC

R16

NC

P16

I/O

1L

N16

I/O

2R

N15

I/O

1R

N14

I/O

2L

M16

I/O

4L

M15

I/O

3L

M14

I/O

3R

L16

I/O

5R

L15

I/O

4R

L14

I/O

5L

K16

I/O

7L

K15

I/O

6L

K14

I/O

6R

J16

I/O

8L

J15

I/O

7R

J14

I/O

8R

H16

I/O

10R

H15

IO

9L

H14

I/O

9R

G16

I/O

11R

G15

I/O

11L

G14

I/O

10L

F16

I/O

12L

F14

I/O

12R F15

I/O

13R

R9

CE

0R R11

REPEAT

R

T6

BA

0R

T9

CE

1R

A6

BA

0L

B10

R/W

L

C13

A

3L

P6

A

10R

R10

R/W

R

R7

A

9R

T10

OE

R

T7

A

8R

,

E5

V

DD E6

V

DD E7

V

SS E8

V

SS E9

V

SS E10

V

SS E11

V

DD E12

V

DD E13

V

DDQR

F5

V

DD F6

V

SS F8

V

SS

F9

V

SS F10

V

SS F12

V

DD F13

V

DDQR

G5

V

SS G6

V

SS G7

V

SS

G8

V

SS G9

V

SS G10

V

SS G11

V

SS

G12

V

SS G13

V

DDQL

H5

V

SS H6

V

SS

H7

V

SS H8

V

SS H9

V

SS H10

V

SS

H11

V

SS H12

V

SS H13

V

DDQL

J5

V

SS J6

V

SS J7

V

SS J8

V

SS J9

V

SS J10

V

SS J11

V

SS J12

V

SS

J13

V

DDQR

K5

V

SS

K6

V

SS K7

V

SS

K8

V

SS

L5

V

DD L6

V

SS

L7

V

SS L8

V

SS

M5

V

DD M6

V

DD M7

V

SS M8

V

SS

N5

V

DDQR N6

V

DDQR N7

V

DDQL

N8

V

DDQL

K9

V

SS

K10

V

SS K11

V

SS

K12

V

SS

L9

V

SS L10

V

SS

L11

V

SS L12

V

DD

M9

V

SS M10

V

SS M11

V

DD M12

V

DD

N9

V

DDQR N10

V

DDQR N11

V

DDQL

N12

V

DDQL

K13

V

DDQR

L13

V

DDQL

M13

V

DDQL

N13

V

DD

F7

V

SS F11

V

SS

5626 drw 02d

,

11/08/01

6.42

4

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

Pin Configuration(1,2,3,4) (con't.)

NOTES:

1. All VDD pins must be connected to 3.3V power supply.

2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VIH (3.3V), and 2.5V if OPT pin for that port is set to VIL (0V).

3. All VSS pins must be connected to ground supply.

4. Package body is approximately 28mm x 28mm x 3.5mm.

5. This package code is used to reference the package diagram.

6. This text does not indicate orientation of the actual part-marking.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

61

62

63

64

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84

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

100

101

102

103

104

156

155

154

153

152

151

150

149

148

147

146

145

144

143

142

141

140

139

138

137

136

135

134

133

132

131

130

129

128

127

126

125

124

123

122

121

120

119

118

117

116

115

114

113

112

111

110

109

108

107

106

105

208

207

206

205

204

203

202

201

200

199

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196

195

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192

191

190

189

188

187

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182

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180

179

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175

174

173

172

171

170

169

168

167

166

165

164

163

162

161

160

159

158

157

70V7599DR

DR-208

(5)

208-Pin PQFP

Top View

(6)

I/O

19L

I/O

19R

I/O

20L

I/O

20R

V

DDQL

V

SS

I/O

21L

I/O

21R

I/O

22L

I/O

22R

V

DDQR

V

SS

I/O

23L

I/O

23R

I/O

24L

I/O

24R

V

DDQL

V

SS

I/O

25L

I/O

25R

I/O

26L

I/O

26R

V

DDQR

V

SS

V

DD

V

DD

V

SS

V

SS

V

DDQL

V

SS

I/O

27R

I/O

27L

I/O

28R

I/O

28L

V

DDQR

V

SS

I/O

29R

I/O

29L

I/O

30R

I/O

30L

V

DDQL

V

SS

I/O

31R

I/O

31L

I/O

32R

I/O

32L

V

DDQR

V

SS

I/O

33R

I/O

33L

I/O

34R

I/O

34L

V

SS

V

DDQL

I/O

35R

I/O

35L

PL/FT

R

TMS

TCK

TRST

NC

BA

5R

BA

4R

BA

3R

BA

2R

BA

1R

BA

0R

A

10R

A

9R

A

8R

A

7R

BE

3R

BE

2R

BE

1R

BE

0R

CE

1R

CE

0R

V

DD

V

DD

V

SS

V

SS

CLK

R

OE

R

R/W

R

ADS

R

CNTEN

R

REPEAT

R

A

6R

A

5R

A

4R

A

3R

A

2R

A

1R

A

0R

V

DD

V

SS

V

SS

OPT

R

I/O

0L

I/O

0R

V

DDQL

V

SS

I/O

16L

I/O

16R

I/O

15L

I/O

15R

V

SS

V

DDQL

I/O

14L

I/O

14R

I/O

13L

I/O

13R

V

SS

V

DDQR

I/O

12L

I/O

12R

I/O

11L

I/O

11R

V

SS

V

DDQL

I/O

10L

I/O

10R

I/O

9L

I/O

9R

V

SS

V

DDQR

V

DD

V

DD

V

SS

V

SS

V

SS

V

DDQL

I/O

8R

I/O

8L

I/O

7R

I/O

7L

V

SS

V

DDQR

I/O

6R

I/O

6L

I/O

5R

I/O

5L

V

SS

V

DDQL

I/O

4R

I/O

4L

I/O

3R

I/O

3L

V

SS

V

DDQR

I/O

2R

I/O

2L

I/O

1R

I/O

1L

V

SS

V

DDQR

I/O

18R

I/O

18L

V

SS

PL/FT

L

TDI

TDO

NC

BA

5L

BA

4L

BA

3L

BA

2L

BA

1L

BA

0L

A

10L

A

9L

A

8L

A

7L

BE

3L

BE

2L

BE

1L

BE

0L

CE

1L

CE

0L

V

DD

V

DD

V

SS

V

SS

CLK

L

OE

L

R/W

L

ADS

L

CNTEN

L

REPEAT

L

A

6L

A

5L

A

4L

A

3L

A

2L

A

1L

A

0L

V

DD

V

DD

V

SS

OPT

L

I/O

17L

I/O

17R

V

DDQR

V

SS

5626 drw 02a

,

11/08/01

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

5

Pin Names

Left Port Right Port Names

CE

0L

, CE

1L

CE

0R

, CE

1R

Chip Enables

R/W

L

R/W

R

Read/ Wr ite E nab l e

OE

L

OE

R

Output Enable

BA

0L

- BA

5L

BA

0R

- BA

5R

Bank Address

(4)

A

0L

- A

10L

A

0R

- A

10R

Address

I/O

0L

- I/O

35L

I/O

0R

- I/O

35R

Da ta In p ut/O utp u t

CLK

L

CLK

R

Clock

PL/FT

L

PL/FT

R

Pipeline/Flow-Through

ADS

L

ADS

R

Address Strobe Enable

CNTEN

L

CNTEN

R

Counte r Enable

REPEAT

L

REPEAT

R

Counter Repeat

(3)

BE

0L

- BE

3L

BE

0R

- BE

3R

Byte Enables (9-bit bytes)

V

DDQL

V

DDQR

Po we r (I/O Bus ) (3.3V o r 2.5V)

(1)

OPT

L

OPT

R

Op tio n fo r s e le c ting V

DDQX

(1,2)

V

DD

Po we r (3.3V)

(1)

V

SS

Gro und (0V)

TDI Te s t Data Inp ut

TDO Te st Data Outp ut

TCK Test Logic Clock (10MHz)

TMS Test Mode Select

TRST Re se t (Initi al iz e TA P Co ntro l le r)

56 26 tbl 01

NOTES:

1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to

applying inputs on the I/Os and controls for that port.

2. OPTX selects the operating voltage levels for the I/Os and controls on that port.

If OPTX is set to VIH (3.3V), then that port's I/Os and controls will operate at 3.3V

levels and VDDQX must be supplied at 3.3V. If OPTX is set to VIL (0V), then that

port's I/Os and address controls will operate at 2.5V levels and VDDQX must be

supplied at 2.5V. The OPT pins are independent of one another—both ports can

operate at 3.3V levels, both can operate at 2.5V levels, or either can operate

at 3.3V with the other at 2.5V.

3. When REPEATX is asserted, the counter will reset to the last valid address loaded

via ADSX.

4. Accesses by the ports into specific banks are controlled by the bank address

pins under the user's direct control: each port can access any bank of memory

with the shared array that is not currently being accessed by the opposite port

(i.e., BA0L - BA 5L ≠ BA0R - BA5R). In the event that both ports try to access the

same bank at the same time, neither access will be valid, and data at the two

specific addresses targeted by the ports within that bank may be corrupted (in

the case that either or both ports are writing) or may result in invalid output (in

the case that both ports are trying to read).

6.42

6

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

NOTES:

1 . "H" = VIH, "L" = VIL, "X" = Don't Care.

2. ADS, CNTEN, REPEAT are set as appropriate for address access. Refers to Truth Table II for details.

3. OE is an asynchronous input signal.

4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.

Truth Table I—Read/Write and Enable Control(1,2,3,4)

OE

3

CLK CE

0

CE

1

BE

3

BE

2

BE

1

BE

0

R/WByte 3

I/O

27-35

Byte 2

I/O

18-26

Byte 1

I/O

9-17

Byte 0

I/O

0-8

MODE

X↑HXXXXXXHigh-ZHigh-ZHigh-ZHigh-ZDeselected–Power Down

X↑X LXXXXXHigh-ZHigh-ZHigh-ZHigh-ZDeselected–Power Down

X↑L HHHHHXHigh-ZHigh-ZHigh-ZHigh-ZAll Bytes Deselected

X↑L H H H H L L High-Z High-Z High-Z D

IN

Wr ite to B y te 0 On ly

X↑LHHHLHLHigh-ZHigh-Z D

IN

High-Z Write to Byte 1 Only

X↑LHHLHHLHigh-Z D

IN

High-Z High-Z Write to Byte 2 Only

X↑LHLHHHL D

IN

High-Z High-Z High-Z Write to Byte 3 Only

X↑L H H H L L L High-Z High-Z D

IN

D

IN

Write to Lowe r 2 B y te s Only

X↑LHLLHHL D

IN

D

IN

High-Z High-Z Write to Uppe r 2 bytes Only

X↑LHLLLLL D

IN

D

IN

D

IN

D

IN

Write to All By tes

L↑L H H H H L H High-Z High-Z High-Z D

OUT

Re ad B y te 0 Only

L↑LHHHLHHHigh-ZHigh-ZD

OUT

Hig h -Z Re ad B y te 1 Onl y

L↑LHHLHHHHigh-Z D

OUT

High-Z High-Z Read Byte 2 Only

L↑LHLHHHH D

OUT

High-Z High-Z High-Z Read Byte 3 Only

L↑LHHHLLHHigh-ZHigh-ZD

OUT

D

OUT

Re ad Lowe r 2 By te s On ly

L↑LHLLHHH D

OUT

D

OUT

High-Z High-Z Read Upper 2 Byte s Only

L↑LHLLLLHD

OUT

D

OUT

D

OUT

D

OUT

Re ad All Bytes

HXXXXXXXXHigh-ZHigh-ZHigh-ZHigh-ZOutputs Disabled

5626 tbl 02

Truth Table II—Address and Address Counter Control(1,2,7)

NOTES:

1 . "H" = VIH, "L" = VIL, "X" = Don't Care.

2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE.

3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle.

4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1 and BEn

5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn.

6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded

via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.

7. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address

FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0. Refer

to Timing Waveform of Counter Repeat, page 18. Care should be taken during operation to avoid having both counters point to the same bank (i.e., ensure BA0L

- BA5L ≠ BA0R - BA5R), as this condition will invalidate the access for both ports. Please refer to the functional description on page 19 for details.

Address Previous

Address Addr

Used CLK ADS CNTEN REPEAT

(6)

I/O

(3)

MODE

An X An ↑ L

(4)

XHD

I/O

(n) Exte rnal Ad dress Used

XAnAn + 1

↑H L

(5)

HD

I/O

(n+1) Counter Enabled—Internal Address generation

X An + 1 An + 1 ↑HH HD

I/O

(n+1) External Address Blocked—Counter disab led (An + 1 reused)

XXAn

↑XX L

(4)

D

I/O

(0) Counter Set to last valid ADS lo ad

5626 tbl 03

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

7

Recommended Operating

Temperature and Supply Voltage(1) Recommended DC Operating

Conditions with VDDQ at 2.5V

Absolute Maximum Ratings(1)

NOTES:

1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.

2. VTERM must not exceed VDDQ + 100mV.

3 . To select operation at 2.5V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VIL (0V), and VDDQX for that port must be supplied

as indicated above.

NOTES:

1 . Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or

4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV.

NOTE:

1. This is the parameter TA. This is the "instant on" case temperature.

Grade Ambient

Temperature GND V

DD

Commercial 0

O

C to +70

O

C0V3.3V

+

150m V

Industrial -40

O

C to + 85

O

C0V3.3V

+

150m V

5626 tbl 04

Symbol Parameter Min. Typ. Max. Unit

V

DD

Co re Sup p ly Vol tag e 3.15 3. 3 3.45 V

V

DDQ

I/O Supp ly Voltag e

(3)

2.4 2.5 2.6 V

V

SS

Ground 0 0 0 V

V

IH

Inp u t Hig h Vo l tag e

(Ad d re ss & Co ntro l Inp uts ) 1.7

____

V

DDQ

+ 100mV

(2)

V

IH

Input High Voltage - I/O

(3)

1.7

____

V

DDQ

+ 100mV

(2)

V

IL

Inp u t Lo w Vo lta g e -0. 3

(1)

____

0.7 V

5626 tb l 0 5a

Symbol Rating Commercial

& Industrial Unit

V

TERM

(2)

Te rminal Vo ltag e

with Res pec t to

GND

-0.5 to +4.6 V

T

BIAS

Temperature

Und e r B ias -55 to +125

o

C

T

STG

Storage

Temperature -65 to +150

o

C

I

OUT

DC Outp ut Curre nt 50 mA

5626 tbl 06

Recommended DC Operating

Conditions with VDDQ at 3.3V

NOTES:

1. Undershoot of VIL > -1.5V for pulse width less than 10ns is allowed.

2. VTERM must not exceed VDDQ + 150mV.

3 . To select operation at 3.3V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to VIH (3.3V), and VDDQX for that port must be

supplied as indicated above.

Symbol Parameter Min. Typ. Max. Unit

V

DD

Core S up ply Vo ltage 3.15 3. 3 3.45 V

V

DDQ

I/O Supp ly Vo ltage

(3)

3.15 3.3 3.45 V

V

SS

Ground 0 0 0 V

V

IH

Input Hi g h Vol tag e

(Address & Contro l Inputs)

(3)

2.0

____

V

DDQ

+ 150mV

(2)

V

IH

In p ut Hi g h Vo l tag e - I/ O

(3)

2.0

____

V

DDQ

+ 150mV

(2)

V

IL

Inp ut Lo w Vo l tage -0.3

(1)

____

0.8 V

562 6 tbl 05b

6.42

8

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

DC Electrical Characteristics Over the Operating

Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)

NOTES:

1. At VDD < 2.0V leakages are undefined.

2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details.

Symbol Parameter Test Conditions

70V7599S

UnitMin. Max.

|I

LI

| Inp ut Le akag e Curre nt

(1)

V

DDQ

= Max., V

IN

= 0V to V

DDQ

___

10 µA

|I

LO

| Outp ut Le akag e Curre nt

(1)

CE

0

= V

IH

or CE

1

= V

IL

, V

OUT

= 0V to V

DDQ

___

10 µA

V

OL

(3. 3V) Outp ut Lo w Vo ltag e

(2)

I

OL

= +4mA, V

DDQ

= Min.

___

0.4 V

V

OH

(3.3V) Output High Voltage

(2)

I

OH

= -4mA, V

DDQ

= Min. 2.4

___

V

OL

(2. 5V) Outp ut Lo w Vo ltag e

(2)

I

OL

= +2mA, V

DDQ

= Min.

___

0.4 V

V

OH

(2.5V) Output High Voltage

(2)

I

OH

= -2mA, V

DDQ

= Min. 2.0

___

V

5626 tbl 08

NOTES:

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

3. COUT also references CI/O.

Capacitance(1)

(TA = +25°C, F = 1.0MHZ) PQFP ONLY

Symbol Parameter Conditions(2) Max. Unit

C

IN

Input Capacitance V

IN

= 3dV 8 pF

C

OUT

(3) Ou tp ut Cap aci tance V

OUT

= 3d V 10.5 pF

5626 tbl 07

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

9

DC Electrical Characteristics Over the Operating

T emperature and Supply Voltage Range(5) (VDD = 3.3V ± 150mV)

NOTES:

1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS" at input

levels of GND to 3V.

2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby.

3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".

4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ).

5. CEX = VIL means CE0X = VIL and CE1X = VIH

CEX = VIH means CE0X = VIH or CE1X = VIL

CEX < 0.2V means CE0X < 0.2V and CE1X > VDDQ - 0.2V

CEX > VDDQ - 0.2V means CE0X > VDDQ - 0.2V or CE1X < 0.2V

"X" represents "L" for left port or "R" for right port.

70V7599S200

(7)

Com'l Only 70V7599S166

(6)

Com'l

& I nd

70V7599S133

Com'l

& I nd

Symbol Parameter Test Condition Version Typ.

(4)

Max. Typ.

(4)

Max. Typ.

(4)

Max. Unit

I

DD

Dynamic Op e rating

Current (Both

Ports Activ e)

CE

L

and CE

R

= V

IL

,

Outputs Disab le d,

f = f

MAX

(1)

COM'L S 815 950 675 790 550 645 mA

IND S

____ ____

675 830 550 675

I

SB1

Standb y Current

(B oth P o rts - TTL

Lev el Inp u ts )

CE

L

= CE

R

= V

IH

f = f

MAX

(1)

COM'L S 340 410 275 340 250 295 mA

IND S

____ ____

275 355 250 310

I

SB2

Standb y Current

(One P o rt - TTL

Lev el Inp u ts )

CE

"A"

= V

IL

and CE

"B"

= V

IH

(3)

Active Po rt Outputs Disable d,

f=f

MAX

(1)

COM'L S 690 770 515 640 460 520 mA

IND S

____ ____

515 660 460 545

I

SB3

Full Standb y Curre nt

(B oth P o rts - CM OS

Lev el Inp u ts )

Both Ports CE

L

and CE

R

> V

DDQ

- 0. 2V,

V

IN

> V

DDQ

- 0.2V or V

IN

< 0.2V,

f = 0

(2)

COM'L S 10 30 10 30 10 30 mA

IND S

____ ____

10 40 10 40

I

SB4

Full Standb y Curre nt

(One P o rt - CMOS

Lev el Inp u ts )

CE

"A"

< 0.2V and CE

"B"

> V

DDQ

- 0.2V

(5)

V

IN

> V

DDQ

- 0.2V or V

IN

< 0.2V,

Active Port, Outputs Disabled,

f = f

MAX

(1)

COM'L S 690 770 515 640 460 520 mA

IND S

____ ____

515 660 460 545

5626 t b l 09

6. 166MHz Industrial Temperature not available in BF-208 package.

7. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only.

6.42

10

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

AC T est Conditions (VDDQ - 3.3V/2.5V)

Figure 1. AC Output Test load.

Figure 2. Output Test Load

(For tCKLZ, tCKHZ, tOLZ, and tOHZ).

*Including scope and jig.

Figure 3. Typical Output Derating (Lumped Capacitive Load).

Input Pulse Levels (Address & Controls)

In p ut P ul s e Le ve l s (I/ O s )

In p ut R ise / Fa ll Tim e s

In p ut Ti m ing Refere nc e L e v e l s

Outp ut Refe re nce Le v els

Outp ut Lo ad

GND to 3

.

0V/GND to 2.4V

GND to 3.0V /GND to 2. 4V

2ns

1.5V/1.25V

Fig ure s 1 and 2

5626 tbl 10

1.5V/1.25

50Ω

5626 drw 03

10pF

(Tester)

D

ATA

OUT

,

5626 drw 04

590Ω

5pF*

435Ω

3.3V

DATA

OUT

,

833Ω

5pF*

770Ω

2

.

5

V

DATA

OUT

,

-1

1

2

3

4

5

6

7

20.5 30 50 80 100 200

10.5pF is the I/O capacitance of this

device, and 10pF is the AC Test Load

Capacitance.

Capacitance (pF)

∆tCD

(

Typical, ns)

5626 drw 05

•

,

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

11

AC Electrical Characteristics Over the Operating Temperature Range

(Read and Write Cycle Timing)(2) (VDD = 3.3V ± 150mV, TA = 0°C to +70°C)

NOTES:

1. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VIH. Flow-through parameters (tCYC1, tCD1) apply when

FT/PIPEX = VIL for that port.

2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE) and FT/PIPE. FT/PIPE should be treated as a

DC signal, i.e. steady state during operation.

3. These values are valid for either level of VDDQ (3.3V/2.5V). See page 5 for details on selecting the desired operating voltage levels for each port.

70V7599S200

(5)

Com'l Only 70V7599S166

(3,4)

Com'l

& I n d

70V7599S133

(3)

Com'l

& In d

Symbol Parameter Min.Max.Min.Max.Min.Max.Unit

t

CYC1

Clock Cycle Time (Flow-Through)

(1)

15

____

20

____

25

____

ns

t

CYC2

Clock Cycle Time (Pipelined)

(1)

5

____

6

____

7.5

____

ns

t

CH1

Clo c k Hig h Time (Fl ow-Throug h)

(1)

5

____

6

____

7

____

ns

t

CL1

Clo ck Low Ti me (Flo w-Thro ug h)

(1)

5

____

6

____

7

____

ns

t

CH2

Clock High Time (Pipelined)

(2)

2.0

____

2.1

____

2.6

____

ns

t

CL2

Clock Low Time (Pipelined)

(1)

2.0

____

2.1

____

2.6

____

ns

t

R

Clock Rise Time

____

1.5

____

1.5

____

1.5 ns

t

F

Clock Fall Time

____

1.5

____

1.5

____

1.5 ns

t

SA

Address Setup Time 1.5

____

1.7

____

1.8

____

ns

t

HA

Address Hold Time 0.5

____

0.5

____

0.5

____

ns

t

SC

Chip Enabl e Se tup Tim e 1.5

____

1.7

____

1.8

____

ns

t

HC

Chip Enabl e Hol d Tim e 0.5

____

0.5

____

0.5

____

ns

t

SB

Byte Enable Setup Time 1.5

____

1.7

____

1.8

____

ns

t

HB

B yte Enab le Hold Tim e 0.5

____

0.5

____

0.5

____

ns

t

SW

R/W S e tup Ti me 1.5

____

1.7

____

1.8

____

ns

t

HW

R/W Ho ld Ti me 0.5

____

0.5

____

0.5

____

ns

t

SD

Inp ut Data S e tup Time 1. 5

____

1.7

____

1.8

____

ns

t

HD

Inp ut Data Ho ld Tim e 0. 5

____

0.5

____

0.5

____

ns

t

SAD

ADS Se tup Tim e 1.5

____

1.7

____

1.8

____

ns

t

HAD

ADS Hol d Tim e 0.5

____

0.5

____

0.5

____

ns

t

SCN

CNTEN Se tup Time 1.5

____

1.7

____

1.8

____

ns

t

HCN

CNTEN Ho ld Time 0.5

____

0.5

____

0.5

____

ns

t

SRPT

REPEAT Setup Time 1.5

____

1.7

____

1.8

____

ns

t

HRPT

REPEAT Ho ld Ti me 0.5

____

0.5

____

0.5

____

ns

t

OE

Outp ut Enab le to Data Vali d

____

4.0

____

4.0

____

4.2 ns

t

OLZ

Outp ut E nab le to Outp ut Lo w-Z 0.5

____

0.5

____

0.5

____

ns

t

OHZ

Outp ut E nable to Outp ut Hig h-Z 1 3.4 1 3. 6 1 4.2 ns

t

CD1

Clo c k to Data Val id (Flo w-Thro ug h)

(1)

____

10

____

12

____

15 ns

t

CD2

Clock to Data Valid (Pipelined)

(1)

____

3.4

____

3.6

____

4.2 ns

t

DC

Da ta O utpu t Hol d A f te r C l o ck Hi gh 1

____

1

____

1

____

ns

t

CKHZ

Clock High to Output High-Z 13.413.614.2ns

t

CKLZ

Clo c k Hig h to Outp ut Lo w-Z 0.5

____

0.5

____

0.5

____

ns

Port-to-Port Delay

t

CO

Clock-to-Clock Offse t 5.0

____

6.0

____

7.5

____

ns

5626 tbl 11

4. 166MHz Industrial Temperature not available in BF-208 package.

5. This speed grade available when VDDQ = 3.3.V for a specific port (i.e., OPTx = VIH). This speed grade available in BC-256 package only.

6.42

12

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

An An + 1 An + 2 An + 3

t

CYC2

t

CH2

t

CL2

R/

W

ADDRESS

CE

0

CLK

CE

1

BE

n

(3)

DATA

OUT

OE

t

CD2

t

CKLZ

Qn Qn + 1 Qn + 2

t

OHZ

t

OLZ

t

OE

5626 drw 06

(1)

t

SC

t

HC

t

SB

t

HB

t

SW

t

HW

t

SA

t

HA

t

DC

t

SC

t

HC

t

SB

t

HB

(4)

(1 Latency)

(5)

Timing Wav eform of Read Cyc le for Pipelined Operation

(ADS Operation) (FT/PIPE'X' = VIH)(2)

NOTES:

1. OE is asynchronously controlled; all other inputs are synchronous to the rising clock edge.

2. ADS = VIL, CNTEN and REPEAT = VIH.

3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to

Truth Table 1.

4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers

are for reference use only.

5. If BEn was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state).

6. "x" denotes Left or Right port. The diagram is with respect to that port.

Timing Wa veform of Read Cyc le for Flow-through Output

(FT/PIPE"X" = VIL)(2,6)

An An + 1 An + 2 An + 3

t

CYC1

t

CH1

t

CL1

R/

W

ADDRESS

DATA

OUT

CE

0

CLK

OE

t

SC

t

HC

t

CD1

t

CKLZ

Qn Qn + 1 Qn + 2

t

OHZ

t

OLZ

t

OE

t

CKHZ

5626 drw 07

(5)

(1)

CE

1

BEn

(3)

t

SB

t

HB

t

SW

t

HW

t

SA

t

HA

t

DC

t

DC

(4)

t

SC

t

HC

t

SB

t

HB

(5)

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

13

t

SC

t

HC

CE

0(B1)

A

DDRESS

(B1)

A

0

A

1

A

2

A

3

A

4

A

5

t

SA

t

HA

CLK

Q

0

Q

1

Q

3

DATA

OUT(B1)

t

CH2

t

CL2

t

CYC2

A

DDRESS

(B2)

A

0

A

1

A

2

A

3

A

4

A

5

t

SA

t

HA

CE

0(B2)

DATA

OUT(B2)

Q

2

Q

4

t

CD2

t

CD2

t

CKHZ

t

CD2

t

CKLZ

t

DC

t

CKHZ

t

CD2

t

CKLZ

t

SC

t

HC

t

CKHZ

t

CKLZ

t

CD2

A

6

A

6

t

DC

t

SC

t

HC

t

SC

t

HC

5626 drw 08

Timing Waveform of a Multi-Device Pipelined Read(1,2)

NOTES:

1. B1 Represents Device #1; B2 Represents Device #2. Each Device consists of one IDT70V7599 for this waveform,

and are setup for depth expansion in this example. ADDRESS(B1) = ADDRESS(B2) in this situation.

2. BEn, OE, and ADS = VIL; CE1(B1), CE1(B2), R/W, CNTEN, and REPEAT = VIH.

Timing Waveform of a Multi-Device Flow-Through Read(1,2)

t

SC

t

HC

CE

0(B1)

ADDRESS

(B1)

A

0

A

1

A

2

A

3

A

4

A

5

t

SA

t

HA

CLK

5626 drw 09

D

0

D

3

t

CD1

t

CKLZ

t

CKHZ

(1) (1)

D

1

DATA

OUT(B1)

t

CH1

t

CL1

t

CYC1

(1)

ADDRESS

(B2)

A

0

A

1

A

2

A

3

A

4

A

5

t

SA

t

HA

CE

0(B2)

DATA

OUT(B2)

D

2

D

4

t

CD1

t

CD1

t

CKHZ

t

DC

t

CD1

t

CKLZ

t

SC

t

HC

(1)

t

CKHZ

(1)

t

CKLZ

(1)

t

CD1

A

6

A

6

t

DC

t

SC

t

HC

t

SC

t

HC

D

5

t

CD1

t

CKLZ

(1)

t

CKHZ

(1)

6.42

14

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

CLK

"A"

R/W

"A"

BANK ADDRESS

AND ADDRESS

"A"

DATA

IN"A"

CLK

"B"

R/W

"B"

BANK ADDRESS

AND ADDRESS

"B"

DATA

OUT"B"

t

SW

t

HW

t

SA

t

HA

t

SD

t

HD

t

SW

t

HW

t

SA

t

HA

t

CD2

Dn

An

Dn

5626 drw 10

t

DC

t

CO

(3)

Timing Wa v ef orm of Port A Write to Pipelined P ort B R ead(1,2,4)

Timing Waveform with Port-to-Port Flow-Through Read(1,2,4)

DATA

IN "A"

CLK

"B"

R/W

"B"

BANK ADDRESS

AND ADDRESS

"A"

R/W

"A"

CLK

"A"

BANK ADDRESS

AND ADDRESS

"B"

An

Dn

t

DC

DATA

OUT "B"

5626 drw 11

Dn

t

SW

t

HW

t

SA

t

HA

t

SD

t

HD

t

HW

t

CD1

t

CO

(3)

t

DC

t

SA

t

SW

t

HA

NOTES:

1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.

2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to.

3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO ≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle

(ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2).

4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"

NOTES:

1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.

2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to.

3. If tCO < minimum specified, then operations from both ports are INVALID. If tCO ≥ minimum, then data from Port "B" read is available on first Port "B" clock cycle

(i.e., time from write to valid read on opposite port will be tCO + tCD1).

4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

15

R/

W

ADDRESS An An +1 An + 2 An + 2 An + 3 An + 4

DATA

IN

Dn + 2

CE

0

CLK

5626 drw 12

Qn Qn + 3

DATA

OUT

CE

1

BE

n

t

CD2

t

CKHZ

t

CKLZ

t

CD2

t

SC

t

HC

t

SB

t

HB

t

SW

t

HW

t

SA

t

HA

t

CH2

t

CL2

t

CYC2

READ NOP READ

t

SD

t

HD

(3)

(1)

t

SW

t

HW

WRITE

(4)

Timing Waveform of Pipelined Read-to-Write-to-Read

(OE = VIL)(2)

NOTES:

1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.

2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation".

3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers

are for reference use only.

4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.

R/

W

ADDRESS An An +1 An + 2 An + 3 An + 4 An + 5

DATA

IN

Dn + 3Dn + 2

CE

0

CLK

5626 drw 13

DATA

OUT

Qn Qn + 4

CE

1

BE

n

OE

t

CH2

t

CL2

t

CYC2

t

CKLZ

t

CD2

t

OHZ

t

CD2

t

SD

t

HD

READ WRITE READ

t

SC

t

HC

t

SB

t

HB

t

SW

t

HW

t

SA

t

HA

(3)

(1)

t

SW

t

HW

(4)

Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(2)

NOTES:

1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.

2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.

3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference

use only.

4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows.

6.42

16

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2)

Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2)

NOTES:

1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.

2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH.

3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for

reference use only.

4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.

R/

W

ADDRESS An An +1 An + 2 An + 2 An + 3 An + 4

DATA

IN

Dn + 2

CE

0

CLK

5626 drw 14

Qn

DATA

OUT

CE

1

BEn

t

CD1

Qn + 1

t

CH1

t

CL1

t

CYC1

t

SD

t

HD

t

CD1

t

CD1

t

DC

t

CKHZ

Qn + 3

t

CD1

t

DC

t

SC

t

HC

t

SB

t

HB

t

SW

t

HW

t

SA

t

HA

READ NOP READ

t

CKLZ

(3)

(1)

t

SW

t

HW

WRITE

(4)

R/

W

ADDRESS An An +1 An + 2 An + 3 An + 4 An + 5

(3)

DATA

IN

Dn + 2

CE

0

CLK

5626 drw 15

Qn

DATA

OUT

CE

1

BEn

t

CD1

t

CH1

t

CL1

t

CYC1

t

SD

t

HD

t

CD1

t

DC

Qn + 4

t

CD1

t

DC

t

SC

t

HC

t

SB

t

HB

t

SW

t

HW

t

SA

t

HA

READ WRITE READ

t

CKLZ

(1)

Dn + 3

t

OHZ

t

SW

t

HW

OE

t

OE

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

17

ADDRESS An

CLK

DATAOUT Qx - 1

(2)

Qx Qn Qn + 2

(2)

Qn +

3

ADS

CNTEN

t

CYC2

tCH2 tCL2

5626 drw 16

tSA tHA

tSAD tHAD

tCD2

tDC

READ

EXTERNAL

ADDRESS READ WITH COUNTER COUNTER

HOLD

tSAD tHAD

tSCN tHCN

READ

WITH

COUNTER

Qn + 1

Timing Waveform of Pipelined Read with Address Counter Advance(1)

NOTES:

1. CE0, OE, BEn = VIL; CE1, R/W, and REPEAT = VIH.

2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then

the data output remains constant for subsequent clocks.

Timing Waveform of Flow-Through Read with Address Counter Advance(1)

ADDRESS An

CLK

DATAOUT Qx

(2)

Qn Qn + 1 Qn + 2 Qn + 3

(2)

Qn + 4

ADS

CNTEN

tCYC1

tCH1 tCL1

5626 drw 17

tSA tHA

tSAD tHAD

READ

EXTERNAL

ADDRESS

READ WITH COUNTER COUNTER

HOLD

tCD1

tDC

tSAD tHAD

tSCN tHCN

READ

WITH

COUNTER

6.42

18

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

Timing Waveform of Write with Address Counter Advance

(Flow-through or Pipelined Inputs)(1,6)

NOTES:

1. CE0, BEn, and R/W = VIL; CE1 and REPEAT = VIH.

2. CE0, BEn = VIL; CE1 = VIH.

3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH.

4. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid

ADS load will be accessed. For more information on REPEAT function refer to Truth Table II.

5. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is

written to during this cycle.

6. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address

FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0.

7. For Pipelined Mode user should add 1 cycle latency for outputs as per timing waveform of read cycle for pipelined operations.

ADDRESS An

CLK

DATA

IN

Dn Dn + 1 Dn + 1 Dn + 2

ADS

CNTEN

t

CH2

t

CL2

t

CYC2

5626 drw 18

INTERNAL

(3)

ADDRESS An

(5)

An + 1 An + 2 An + 3 An + 4

Dn + 3 Dn + 4

t

SA

t

HA

t

SAD

t

HAD

WRITE

COUNTER HOLD WRITE WITH COUNTER

WRITE

EXTERNAL

ADDRESS

WRITE

WITH COUNTER

t

SD

t

HD

t

SCN

t

HCN

Timing Waveform of Counter Repeat for Flow Through Mode(2,6,7)

ADDRESS An

t

CYC2

CLK

DATA

IN

R/

W

REPEAT

5626 drw 19

INTERNAL

(3)

ADDRESS

ADS

CNTEN

WRITE TO

ADS

ADDRESS

An

ADVANCE

COUNTER

WRITE TO

An+1

ADVANCE

COUNTER

WRITE TO

An+2

HOLD

COUNTER

WRITE TO

An+2

REPEAT

READ LAST

ADS

ADDRESS

An

DATA

OUT

t

SA

t

HA

,

An

t

SAD

t

HAD

t

SW

t

HW

t

SCN

t

HCN

t

SRPT

t

HRPT

t

SD

t

HD

t

CD1

An+1 An+2 An+2 An An+1 An+2 An+2

D

0

D

1

D

2

D

3

An An+1 An+2 An+2

ADVANCE

COUNTER

READ

An+1

ADVANCE

COUNTER

READ

An+2

HOLD

COUNTER

READ

An+2

(4)

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

19

Functional Description

The IDT70V7599 is a high-speed 128Kx36 (4 Mbit) synchronous

Bank-Switchable Dual-Ported SRAM organized into 64 independent

2Kx36 banks. Based on a standard SRAM core instead of a traditional true

dual-port memory core, this bank-switchable device offers the benefits of

increased density and lower cost-per-bit while retaining many of the

features of true dual-ports. These features include simultaneous, random

access to the shared array, separate clocks per port, 166 MHz operating

speed, full-boundary counters, and pinouts compatible with the IDT70V3599

(128Kx36) dual-port family.

The two ports are permitted independent, simultaneous access into

separate banks within the shared array. Access by the ports into specific

banks are controlled by the bank address pins under the user's direct

control: each port can access any bank of memory with the shared array

that is not currently being accessed by the opposite port (i.e., BA0L - BA5L

≠ BA0R - BA5R). In the event that both ports try to access the same bank

at the same time, neither access will be valid, and data at the two specific

addresses targeted by the ports within that bank may be corrupted (in the

case that either or both ports are writing) or may result in invalid output (in

the case that both ports are trying to read).

The IDT70V7599 provides a true synchronous Dual-Port Static RAM

5626 drw 20

IDT70V7599

CE

0

CE

1

CE

1

CE

0

CE

0

CE

1

B

A

6(1)

CE

1

CE

0

V

DD

V

DD

IDT70V7599

Control Inputs

Control Inputs BE,

R/W,

OE,

CLK,

ADS,

REPEAT

,

CNTEN

,

Figure 4. Depth and Width Expansion with IDT70V7599

interface. Registered inputs provide minimal setup and hold times on

address, data and all critical control inputs.

An asynchronous output enable is provided to ease asynchronous

bus interfacing. Counter enable inputs are also provided to stall the

operation of the address counters for fast interleaved memory applications.

A HIGH on CE0 or a LOW on CE1 for one clock cycle will power down

the internal circuitry on each port (individually controlled) to reduce static

power consumption. Dual chip enables allow easier banking of multiple

IDT70V7599S for depth expansion configurations. Two cycles are

required with CE0 LOW and CE1 HIGH to read valid data on the outputs.

Depth and Width Expansion

The IDT70V7599 features dual chip enables (refer to Truth

Table I) in order to facilitate rapid and simple depth expansion with no

requirements for external logic. Figure 4 illustrates how to control the

various chip enables in order to expand two devices in depth.

The IDT70V7599 can also be used in applications requiring expanded

width, as indicated in Figure 4. Through combining the control signals, the

devices can be grouped as necessary to accommodate applications

needing 72-bits or wider.

NOTE:

1. In the case of depth expansion, the additional address pin logically serves as an extension of the bank address. Accesses by the ports into specific banks are

controlled by the bank address pins under the user's direct control: each port can access any bank of memory within the shared array that is not currently

being accessed by the opposite port (i.e., BA0L - BA6L ≠ BA0R - BA6R). In the event that both ports try to access the same bank at the same time, neither

access will be valid, and data at the two specific addresses targeted by the parts within that bank may be corrupted (in the case that either or both parts are

writing) or may result in invalid output (in the case that both ports are trying to read).

6.42

20

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

JT AG AC Electrical

Characteristics(1,2,3,4)

70V7599

Symbol Parameter Min. Max. Units

t

JCYC

JTAG Clock Input Period 100

____

ns

t

JCH

JTAG Clock HIGH 40

____

ns

t

JCL

JTAG Clock Low 40

____

ns

t

JR

JTAG Clock Rise Time

____

3

(1)

ns

t

JF

JTAG Clock Fall Time

____

3

(1)

ns

t

JRST

JTAG Rese t 50

____

ns

t

JRSR

JTAG Rese t Recovery 50

____

ns

t

JCD

J TAG Data Outp ut

____

25 ns

t

JDC

J TA G Da ta O utput Hold 0

____

ns

t

JS

JTAG Se tup 15

____

ns

t

JH

JTAG Hold 15

____

ns

5626 tbl 12

NOTES:

1. Guaranteed by design.

2. 30pF loading on external output signals.

3. Refer to AC Electrical Test Conditions stated earlier in this document.

4. JTAG operations occur at one speed (10MHz). The base device may run at

any speed specified in this datasheet.

JTAG Timing Specifications

TCK

Device Inputs

(1)

/

TDI/TMS

D

evice Outputs

(2)

/

TDO

TRST

t

JCD

t

JDC

t

JRST

t

JS

t

JH

t

JCYC

t

JRSR

t

JF

t

JCL

t

JR

t

JCH

5626 drw 21

,

Figure 5. Standard JTAG Timing

NOTES:

1. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.

2. Device outputs = All device outputs except TDO.

6.42

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

21

Identification Register Definitions

Instruction Fiel d Value Descripti on

Revision Numbe r (31:28) 0x0 Reserved for version number

IDT De vic e ID (27: 12) 0x 308 De fi ne s IDT part numb e r

IDT JE DEC ID (11:1) 0x33 A llo ws u ni que id e ntif ic atio n o f d ev ic e v e nd or as IDT

ID Re g is ter Ind ic ator B it (Bi t 0) 1 Ind ic ate s the p re se nce o f an ID re gi ste r

5626 tbl 13

Scan Register Sizes

Regi ster Nam e Bit Si ze

Instruction (IR) 4

Bypass (BYR) 1

Id e n ti fi ca ti o n (IDR ) 3 2

Boundary Scan (BSR) Note (3)

5626 tbl 14

System Interface Parameters

Instruction Code Description

EXTEST 0000 Forces contents of the boundary scan ce lls o nto the device outp uts

(1)

.

Places the boundary scan register (BSR) between TDI and TDO.

BYPASS 1111 Places the by pass registe r (BYR) between TDI and TDO.

IDCODE 0010 Loads the ID register (IDR) with the vendor ID code and places the

register between TDI and TDO.

HIGHZ 0100 Places the bypass register (BYR) be tween TDI and TDO. Forces all

device output drivers to a High-Z state.

CLAMP 0011 Uses BYR. Forces contents of the boundary scan cells onto the device

outp uts. Places the by pass register (BYR) betwe en TDI and TDO.

SAMPLE/PRELOAD 0001 Places the boundary scan registe r (BSR) between TDI and TDO.

SA MP LE al lo ws d ata fro m d e vi ce inp uts

(2)

and o utp uts

(1)

to be captured

in the bo undary scan cells and shifted serially through TDO. PRELOAD

all o ws d ata to be inp ut se riall y i nto the bo und ary s c a n ce ll s vi a the TDI.

RE SERV ED Al l o the r co d e s Se ve ral c o mb i natio ns are re se rv ed . Do no t us e c o d es othe r than tho se

identified above.

5626 tbl 15

NOTES:

1. Device outputs = All device outputs except TDO.

2. Device inputs = All device inputs except TDI, TMS, TRST, and TCK.

3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local

IDT sales representative.

6.42

22

IDT70V7599S

High-Speed 128K x 36 Synchronous Bank-Switchable Dual-Port Static RAM Industrial and Commercial Temperature Ranges

Ordering Information

A

Power

999

Speed

A

Package

A

Process/

Temperature

Range

Blank

ICommercial (0°C to +70°C)

Industrial (-40°C to +85°C)

BF

DR

BC

208-pin fpBGA (BF-208)

208-pin PQFP (DR-208)

256-pin BGA (BC-256)

200

166

133

XXXXX

Device

Type

Speed in Megahertz

5626 drw 22

S Standard Power

70V7599 4Mbit (128K x 36-Bit) Synchronous Bank-Switchable Dual-Port RAM

Commercial Only

(1)

Commercial & Industrial

(2)

Commercial & Industrial

,

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

CORPORATE HEADQUARTERS for SALES: for Tech Support:

6024 Silver Creek Valley Road 800-345-7015 or 408-284-8200 408-284-2794

San Jose, CA 95138 fax: 408-284-2775 DualPortHelp@idt.com

www.idt.com

Datasheet Document History:

1/5/00: Initial Public Offering

10/19/01: Page 2, 3 & 4 Added date revision for pin configurations

Page 9 Changed ISB3 values for commercial and industrial DC Electrical Characteristics

Page 11 Changed tOE value in AC Electrical Characteristics, please refer to Errata #SMEN-01-05

Page 20 Increased tJCD from 20ns to 25ns, please refer to Errata #SMEN-01-04

Page 1 & 22 Replaced TM logo with ® logo

03/18/02: Page 1, 9, 11 & 22 Added 200MHz specification

Page 9 Tightened power numbers in DC Electrical Characteristics

Page 14 Changed waveforms to show INVALID operation if tCO < minimum specified

Page 1 - 22 Removed "Preliminary" status

12/4/02: Page 9, 11 & 22 Designated 200 Mhz speed grade available in BC-256 package only

01/16/04: Page 11 Added byte enable setup time and byte enable hold time parameters and values to all speed grades in the AC Electrical

Characteristics Table

07/25/08: Page 9 Corrected a typo in the DC Chars table

01/29/09: Page 22 Removed "IDT" from orderable part number

NOTES:

1. Available in BC-256 package only.

2. Industrial Temperature at 166Mhz not available in BF-208 package.

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