APTMC120AM08CD3AG VDSS = 1200V RDSon = 8m typ @ Tj = 25C ID = 250A @ Tc = 25C Phase leg SiC MOSFET Power Module Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * SiC Power MOSFET - Low RDS(on) - High temperature performance * SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * * * Kelvin source for easy drive High level of integration AlN substrate for improved thermal performance M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * RoHS Compliant All ratings @ Tj = 25C unless otherwise specified Absolute maximum ratings (per SiC MOSFET) IDM VGS RDSon PD Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Max ratings 1200 250 190 550 -10/25V 10 1100 Unit V January, 2015 ID Parameter Drain - Source Voltage A V m W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTMC120AM08CD3AG - Rev 4 Symbol VDSS APTMC120AM08CD3AG Electrical Characteristics (per SiC MOSFET) Symbol Characteristic IDSS Zero Gate Voltage Drain Current RDS(on) Drain - Source on Resistance VGS(th) IGSS Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V , VDS = 1200V Tj = 25C VGS = 20V ID = 200A Tj = 150C VGS = VDS, ID = 10mA VGS = 20 V, VDS = 0V Min 1.7 Typ 120 8 15 2.2 Max 1000 10 21 Unit A m 2.5 V A Max Unit Dynamic Characteristics (per SiC MOSFET) Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn on Energy Eoff Turn off Energy RGint Internal gate resistance RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 1000V f = 1MHz Min VGS = 20V VBus = 800V ID = 200A VGS = -2/+20V VBus = 800V ID = 200A ; TJ =150C RL = 4 ; RG = 5 Inductive Switching VGS = -5/+20V VBus = 600V ID = 200A RG = 5 Typ 9500 800 65 490 110 180 20 pF nC 20 ns 75 35 Tj = 150C 4.3 Tj = 150C 2.4 mJ 1 0.11 C/W Body diode diode ratings and characteristics (per SiC MOSFET) Diode Forward Voltage trr Qrr Irr Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 200A ; VGS = -5V VR = 800V ; diF/dt = 3500A/s Min Typ 3.3 3.1 40 1650 64 Max Unit V ns nC A January, 2015 VSD Test Conditions VGS = -5V, ISD = 100A VGS = -2V, ISD = 100A www.microsemi.com 2-7 APTMC120AM08CD3AG - Rev 4 Symbol Characteristic APTMC120AM08CD3AG SiC schottky diode ratings and characteristics (per SiC diode) Symbol Characteristic VRRM Test Conditions Min Peak Repetitive Reverse Voltage VR=1200V Tj = 25C Tj = 175C Forward Current Tc = 125C VF Diode Forward Voltage IF = 120A Tj = 25C Tj = 175C QC Total Capacitive Charge C Total Capacitance IRRM IF RthJC Typ Reverse Leakage Current 0.38 0.68 120 1.6 2.3 IF = 120A, VR = 1200V di/dt =5000A/s 960 f = 1MHz, VR = 200V 1152 f = 1MHz, VR = 400V 828 Junction to Case Thermal Resistance Max Unit 1200 2.4 12 V mA A 1.8 3 V nC pF 0.10 C/W Thermal and package characteristics Symbol Characteristic VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz SiC MOSFET TJ Operating junction temperature range SiC diode TJOP Recommended junction temperature under switching conditions TSTG Storage Temperature Range TC Operating Case Temperature For terminals M6 Torque Mounting torque To Heatsink M6 Wt Package Weight Min 4000 -40 -40 -40 -40 -40 3 3 Max 150 175 TJmax -25 125 100 5 5 350 Unit V C N.m g www.microsemi.com 3-7 APTMC120AM08CD3AG - Rev 4 January, 2015 D3 Package outline (dimensions in mm) APTMC120AM08CD3AG Typical SiC MOSFET Performance Curve Output Characteristics Output Characteristics 400 400 IDS, Drain Source Current (A) 300 IDS , Drain Source Current (A) VGS=20V 350 VGS=18V 250 VGS=16V 200 150 100 50 TJ=25C 0 0 1 2 3 4 VGS=20V 350 VGS=18V 300 250 VGS=16V 200 150 100 50 TJ=150C 0 0 5 V DS, Drain Source Voltage (V) 3 4 5 6 7 8 9 Transfert Characteristics 400 2 VGS=20V I D=200A 1.75 IDS , Drain Source Current (A) RDSon, Drain Source ON resistance 2 V DS, Drain Source Voltage (V) Norm alized RDS(on) vs. Tem perature 1.5 1.25 1 0.75 25 50 75 100 125 150 350 300 250 200 TJ=150C 150 100 TJ=25C 50 0 2 4 6 8 10 12 V GS , Gate Source Voltage (V) TJ, Junction Temperature (C) inductive switching energy vs RG Inductive switching energy vs current 5.5 10 5.0 Eon Sw itching Energy (m J) Sw itching Energy (m J) 1 VGS=-5/20V I D = 200A VBUS = 600V TJ = 150C 4.5 4.0 3.5 Eof f 3.0 2.5 VGS =-5/20V R G = 5 VBUS = 600V TJ = 150C 8 6 Eon 4 Eof f 2 0 2.0 5 7.5 10 12.5 50 15 100 150 200 250 300 350 400 Drain current (A) Gate Resistance (Ohms) January, 2015 0.1 D = 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-7 APTMC120AM08CD3AG - Rev 4 Thermal Im pedance (C/W) Maxim um Effective Transient Thermal Im pedance, Junction to Case vs Pulse Duration 0.12 APTMC120AM08CD3AG Gate Charge vs Gate Source Voltage 20 Capacitance vs Drain Source Voltage V GS, Gate Source Voltage (V) C, Capacitance (nF) 100 Ciss 10 Coss 1 Crss 0.1 0.01 0 200 400 600 800 TJ = 25C I D = 200A VDS = 800V 16 12 8 4 0 1000 0 V DS , Drain Source Voltage (V) 100 200 300 400 Gate Charge (nC) Output Characteristics Body diode Characteristics -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 -4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 IDS, Drain source current (A) -50 V GS=-5V -100 V GS=0V -150 V GS =-2V -200 -250 -300 -350 TJ=25C IDS, Drain source current (A) 0 0 -50 V GS=0V -100 V GS =5V -150 V GS =20V V GS=15V TJ=25C -3.5 -100 -150 -200 -250 -300 TJ =150C -350 IDS, Drain source current (A) IDS , Drain source current (A) -50 V GS=-2V -300 -350 Output Characteristics -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 V GS=0V -250 V DS, Drain source voltage (V) Body diode Characteristics -3 -2.5 -2 -1.5 -1 -0.5 V GS=-5V -200 -400 -400 V DS, Drain source voltage (V) -4 500 0 0 V GS =0V -50 V GS=5V -100 V GS=20V V GS=15V -200 -250 -300 TJ =150C -350 -400 -400 V DS , Drain source voltage (V) -150 V DS, Drain source voltage (V) Operating Frequency vs Drain Current 600 ZVS January, 2015 400 VBUS=600V D=50% R G =5 TJ=150C TC=75C ZCS 300 200 100 Hard switching 0 50 100 150 200 250 ID, Drain Current (A) www.microsemi.com 5-7 APTMC120AM08CD3AG - Rev 4 Frequency (kHz) 500 APTMC120AM08CD3AG Typical SiC diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.1 D = 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 2000 TJ=25C 200 IR Reverse Current (A) IF Forward Current (A) 240 160 120 TJ=175C 80 TJ=125C 40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1600 TJ=175C 1200 800 TJ=125C 400 0 400 VF Forward Voltage (V) TJ=25C 600 800 1000 1200 1400 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 8 6 4 January, 2015 2 0 1 10 100 1000 VR Reverse Voltage www.microsemi.com 6-7 APTMC120AM08CD3AG - Rev 4 C, Capacitance (nF) 10 APTMC120AM08CD3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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