APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
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All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings (per SiC MOSFET)
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Voltage 1200 V
ID Continuous Drain Current Tc = 25°C 250
A
Tc = 80°C 190
IDM Pulsed Drain current 550
VGS Gate - Source Voltage -10/25V V
RDSon Drain - Source ON Resistance 10 mΩ
PD Maximum Power Dissipation Tc = 25°C 1100 W
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• SiC Power MOSFET
- Low RDS(on)
- High temperature performance
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Kelvin source for easy drive
• High level of integration
• AlN substrate for improved thermal performance
• M6 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Phase leg
SiC MOSFET Power Module
VDSS = 1200V
RDSon = 8mΩ typ @ Tj = 25°C
ID = 250A @ Tc = 25°C
APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
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Electrical Characteristics (per SiC MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
IDSS Zero Gate Voltage Drain Current VGS = 0V , VDS = 1200V 120 1000 µA
RDS(on) Drain – Source on Resistance VGS = 20V
ID = 200A
T
j
= 25°C 8 10 mΩ
Tj = 150°C 15 21
VGS
(
th
)
Gate Threshold Voltage VGS = VDS, ID = 10mA 1.7 2.2 V
IGSS Gate – Source Leakage Current VGS = 20 V, VDS = 0V 2.5 µA
Dynamic Characteristics (per SiC MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance VGS = 0V
VDS = 1000V
f = 1MHz
9500
pF Coss Output Capacitance 800
Crss Reverse Transfer Capacitance 65
Q
g
Total gate Charge VGS = 20V
VBus = 800V
ID = 200A
490
nC
Qgs Gate – Source Charge 110
Q
g
d Gate – Drain Charge 180
Td(on) Turn-on Delay Time VGS = -2/+20V
VBus = 800V
ID = 200A ; TJ =150°C
RL = 4Ω ; RG = 5Ω
20
ns
Tr Rise Time 20
Td(off) Turn-off Delay Time 75
Tf Fall Time 35
Eon Turn on Energy
Inductive Switching
VGS = -5/+20V
VBus = 600V
ID = 200A
RG = 5Ω
Tj = 150°C 4.3
mJ
Eoff Turn off Energy Tj = 150°C 2.4
RGint Internal gate resistance 1 Ω
RthJC Junction to Case Thermal Resistance 0.11 °C/W
Body diode diode ratings and characteristics (per SiC MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
VSD Diode Forward Voltage VGS = -5V, ISD = 100A 3.3 V
VGS = -2V, ISD = 100A 3.1
trr Reverse Recovery Time ISD = 200A ; VGS = -5V
VR = 800V ; diF/dt = 3500A/µs
40 ns
Qrr Reverse Recovery Charge 1650 nC
Irr Reverse Recovery Current 64 A
APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
www.microsemi.com 3-7
SiC schottky diode ratings and characteristics (per SiC diode)
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Peak Repetitive Reverse Voltage 1200 V
IRRM Reverse Leakage Current VR=1200V Tj = 25°C 0.38 2.4 mA
Tj = 175°C 0.68 12
IF Forward Current Tc = 125°C 120 A
VF Diode Forward Voltage IF = 120A T
j
= 25°C 1.6 1.8 V
T
j
= 175°C 2.3 3
QC Total Capacitive Charge IF = 120A, VR = 1200V
di/dt =5000A/µs 960 nC
C Total Capacitance f = 1MHz, VR = 200V 1152 pF
f = 1MHz, VR = 400V 828
RthJC Junction to Case Thermal Resistance 0.10 °C/W
Thermal and package characteristics
Symbol Characteristic Min Max Unit
VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
TJ Operating junction temperature range SiC MOSFET -40 150
°C
SiC diode -40 175
TJOP Recommended junction temperature under switching conditions -40 TJmax -25
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
Torque Mounting torque For terminals M6 3 5 N.m
To Heatsink M6 3 5
Wt Package Weight 350 g
D3 Package outline (dimensions in mm)
APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
www.microsemi.com 4-7
Typical SiC MOSFET Performance Curve
V
GS
=16V
V
GS
=18V
V
GS
=20V
0
50
100
150
200
250
300
350
400
012345
I
DS
, Drain Source Current (A)
V
DS
, Drain Source Voltage (V)
Output Characteristics
T
J
=25° C
V
GS
=20V
V
GS
=16V
V
GS
=18V
0
50
100
150
200
250
300
350
400
0123456789
I
DS
, Drain Source Current (A)
V
DS
, Drain Source Voltage (V)
Output Characteristics
T
J
=150°C
0.75
1
1.25
1.5
1.75
2
25 50 75 100 125 150
T
J
, Junction Te mperature (°C)
Normalized R
DS(on)
vs. Te m perature
R
DSon
, Drain Source ON resistance
V
GS
=20V
I
D
=200A
T
J
=25°C
T
J
=150°C
0
50
100
150
200
250
300
350
400
24681012
I
DS
, Drain Source Current (A)
V
GS
, Gate Source Voltage (V)
Transfert Characteristics
D = 0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Impedance (°C/W)
rectangular Pulse Duration (Seconds)
Maxim um Effective Transient Thermal Im pedance, Junction to Case vs Puls e Duration
Eon
Eof f
0
2
4
6
8
10
50 100 150 200 250 300 350 400
Switching Energy (m J)
Drain curre nt (A)
Inductive switching energy vs current
V
GS
=-5/20V
R
G
= 5
V
BUS
= 600V
T
J
= 150°C
Eon
Eof f
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
5 7.5 10 12.5 15
Switching Energy (m J)
Gate Resistance (Ohms)
inductive switching energy vs RG
V
GS
=-5/20V
I
D
= 200A
V
BUS
= 600V
T
J
= 150°C
APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
www.microsemi.com 5-7
Cis s
Crss
Coss
0.01
0.1
1
10
100
0 200 400 600 800 1000
C, Capacitance (nF)
V
DS
, Dr ain Source Voltage (V)
Capacitance vs Drain Source Voltage
0
4
8
12
16
20
0 100 200 300 400 500
V
GS
, Gate Source Voltage (V)
Gate Charge (nC)
Gate Charge vs Gate Source Voltage
T
J
= 25°C
I
D
= 200A
V
DS
= 800V
ZCS
Hard
switching
ZVS
0
100
200
300
400
500
600
50 100 150 200 250
Fr e que ncy ( kHz)
I
D
, Drain Current (A)
Operating Frequency vs Drain Current
V
BUS
=600V
D=50%
R
G
=5
T
J
=150°C
T
C
=75°C
V
GS
=0V
V
GS
=5V
V
GS
=15V
V
GS
=20V
-400
-350
-300
-250
-200
-150
-100
-50
0
-4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0
I
DS
, Drain source current (A)
V
DS
, Dr ain source voltage (V)
Output Characteristics
T
J
=25°C
V
GS
=-2V
V
GS
=0V
V
GS
=-5V
-400
-350
-300
-250
-200
-150
-100
-50
0
-4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5
I
DS
, Drain source current (A)
V
DS
, Drain source voltage (V)
Body diode Characteristics
T
J
=25°C
V
GS
=-2V
V
GS
=0V
V
GS
=-5V
-400
-350
-300
-250
-200
-150
-100
-50
0
-4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5
I
DS
, Drain s ource current (A)
V
DS
, Drain source voltage (V)
Body diode Characteristics
T
J
=150°C
V
GS
=0V
V
GS
=5V
V
GS
=15V
V
GS
=20V
-400
-350
-300
-250
-200
-150
-100
-50
0
-4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0
I
DS
, Dr ain source current (A)
V
DS
, Drain s ource voltage (V)
Output Characteristics
T
J
=150°C
APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
www.microsemi.com 6-7
Typical SiC diode Performance Curve
D = 0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Impedance (°C/W)
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T
J
=25°C
T
J
=125°C
T
J
=175°C
0
40
80
120
160
200
240
00.511.522.533.544.5
I
F
Forward Current (A)
V
F
Forward Voltage (V)
Forward Characteristics
T
J
=25°C
T
J
=125°C
T
J
=175°C
0
400
800
1200
1600
2000
400 600 800 1000 1200 1400
I
R
Reverse Current (µA)
V
R
Reverse Voltage (V)
Reverse Characteristics
0
2
4
6
8
10
1 10 100 1000
C, Capacitance (nF)
V
R
Reverse Voltage
Capacitance vs.Reverse Voltage
APTMC120AM08CD3AG
APTMC120AM08CD3AG – Rev 4 January, 2015
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