Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m General Description Features The MDS5601 uses advanced MagnaChip's MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS5601 is suitable for DC/DC converter and general purpose applications. a a a a a VDS = 30V ID = 12.9A @VGS = 10V RDS(ON) < 10.5m @VGS = 10V < 16.1m @VGS = 4.5V 100% UIL Tested 100% Rg Tested D1 5(D2) 6(D2) 7(D1) 8(D1) G2 G1 4(G2) 3(S2) 2(G1) 1(S1) D2 S2 S1 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V 20 V VGSS o 12.9 TC=25 C o Continuous Drain Current TC=70 C (1) o TA=25 C ID o TA=70 C Pulsed Drain Current IDM o o TA=25 C PD o TA=70 C Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range A (3) (3) 40 A 3.13 TC=25 C Power Dissipation 10.0 8.0 o TC=70 C 10.4 2.0 2.0 W (3) 1.28 (3) EAS 32 TJ, Tstg -55~150 Symbol Rating RJA 62.5 RJC 40 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case July. 2010. Version 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS5601 - Dual N-Channel Trench MOSFET MDS5601 Part Number Temp. Range MDS5601URH -55~150 C o Package Packing Rohs Status SO-8 Tape & Reel Halogen Free Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.3 2.0 2.7 - - 1 - - 5 - - 0.1 - 9.5 10.5 - 14.3 18.8 VGS = 4.5V, ID = 7.0A - 13.1 16.1 VDS = 10V, ID = 9A - 35 - 11.0 15.7 -20.4 5.4 7.7 10.0 - 3.4 - - 2.5 - 682 975 1268 126 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V o TJ=55 C VGS = 20V, VDS = 0V VGS = 10V, ID = 9.0A Drain-Source ON Resistance Forward Transconductance o RDS(ON) gfs TJ=125 C V A m S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 9.0A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss 98 97 Output Capacitance Coss 143 204 Turn-On Delay Time td(on) - 5.9 - - 21.3 - - 21.4 - - 12.4 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDS = 15.0V, RL = 1.5, RG = 3.0 tf nC pF ns Rg f=1 MHz - 1.6 3.0 VSD IS = 1.0A, VGS = 0V - 0.72 1.0 V - 27.2 - ns - 11.5 - nC Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 9.0A, dl/dt = 100A/s Note : 1. Surface mounted RF4 board with 2oz. Copper. Continuous current at TC=25 is silicon limited. 2. EAS is tested at starting Tj =25, L = 1.0mH, IAS = 8A, VDD = 15V, VGS = 10V. 3. T < 10sec. July. 2010. Version 1.0 2 MagnaChip Semiconductor Ltd. MDS5601 - Dual N-Channel Trench MOSFET Ordering Information Drain-Source On-Resistance [m] ID, Drain Current [A] 40 20 4.5V VGS = 10V 4.0V 30 5.0V 8.0V 3.5V 20 10 3.0V 0 0.0 0.5 1.0 1.5 2.0 2.5 16 VGS = 4.5V 12 VGS = 10V 8 4 0 3.0 5 10 VDS, Drain-Source Voltage [V] Notes : ID = 9A Notes : 1. VGS = 10 V 2. ID = 5.8 A 1.6 RDS(ON) [m ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 25 100 1.8 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 80 60 40 20 0 150 TA = 25 2 3 o TJ, Junction Temperature [ C] 6 7 8 9 10 Notes : VGS = 0V IDR, Reverse Drain Current [A] Notes : VDS = 10V 16 12 TA=25 8 4 2 3 4 10 1 10 0 TA=25 10 5 VGS, Gate-Source Voltage [V] -1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics July. 2010. Version 1.0 5 Fig.4 On-Resistance Variation with Gate to Source Voltage 20 1 4 VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with ID, Drain Current [A] 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 0 15 ID, Drain Current [A] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS5601 - Dual N-Channel Trench MOSFET 50 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1.4n 8 1.2n Capacitance [F] VGS, Gate-Source Voltage [V] Note : ID = 9A VDS = 15V 6 4 Ciss 1.0n 800.0p 600.0p Coss 2 200.0p 0 0.0 0 4 8 12 16 Notes ; 1. VGS = 0 V 2. f = 1 MHz 400.0p 20 Crss 0 10 20 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 16 10 Operation in This Area is Limited by R DS(on) 2 14 10 1 ms 10 ms 1 12 ID, Drain Current [A] ID, Drain Current [A] 100 s 100 ms 1s 10 s 10 0 100 s 10 DC 8 6 4 -1 Single Pulse RthJA=62.5/W TA=25 10 10 2 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TA, Case Temperature [] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 0 10 Z JA(t), Thermal Response D=0.5 0.2 0.1 -1 10 0.05 Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JA* R JA(t) + TA R JA=62.5/W 0.02 0.01 -2 10 single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve July. 2010. Version 1.0 4 MagnaChip Semiconductor Ltd. MDS5601 - Dual N-Channel Trench MOSFET 1.6n 10 8 Leads SOIC Dimensions are in millimeters unless otherwise specified July. 2010. Version 1.0 5 MagnaChip Semiconductor Ltd. MDS5601 - Dual N-Channel Trench MOSFET Physical Dimensions MDS5601 - Dual N-Channel Trench MOSFET DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller's customers using or selling Seller's products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. July. 2010. Version 1.0 6 MagnaChip Semiconductor Ltd.