July. 2010. Version 1.0 MagnaChip Semiconductor Ltd.
1
MDS5601 – Dual N-Channel Trench MOSFET
Absolute Maximum Ratings (Ta = 25oC)
Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current
(1)
T
C=25oC
ID
12.9
A
T
C=70oC 10.4
TA=25oC 10.0(3)
TA=70oC 8.0(3)
Pulsed Drain Current IDM 40 A
Power Dissipation
T
C=25oC
PD
3.13
W
T
C=70oC 2.0
TA=25oC 2.0(3)
TA=70oC 1.28(3)
Single Pulse Avalanche Energy (2) EAS 32 mJ
Junction and Storage Temperature Range TJ, Tstg -55~150
oC
Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient (1) RθJA 62.5 oC/W
Thermal Resistance, Junction-to-Case RθJC 40
MDS5601
Dual N-channel Trench MOSFET 30V, 12.9A, 10.5m
Features
à V
DS = 30V
à I
D = 12.9A @VGS = 10V
à R
DS(ON)
< 10.5mΩ @VGS = 10V
< 16.1mΩ @VGS = 4.5V
à 100% UIL Tested
à 100% Rg Tested
General Description
The MDS5601 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS5601 is suitable for DC/DC converter and
general purpose applications.
1(S1)
2(G1)
3(S2)
4(G2)
8(D1)
7(D1)
6(D2)
5(D2)
D1
G1
S1
D
2
G2
S2
July. 2010. Version 1.0 MagnaChip Semiconductor Ltd.
2
MDS5601 – Dual N-Channel Trench MOSFET
Ordering Information
Part Number Temp. Range Package Packing Rohs Status
MDS5601URH -55~150oC SO-8 Tape & Reel Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS I
D = 250μA, VGS = 0V 30 - - V
Gate Threshold Voltage VGS(th) V
DS = VGS, ID = 250μA 1.3 2.0 2.7
Drain Cut-Off Current IDSS V
DS = 30V, VGS = 0V - - 1
μA TJ=55oC - - 5
Gate Leakage Current IGSS V
GS = ±20V, VDS = 0V - - ±0.1
Drain-Source ON Resistance RDS(ON)
V
GS = 10V, ID = 9.0A - 9.5 10.5
mΩ TJ=125oC - 14.3 18.8
V
GS = 4.5V, ID = 7.0A - 13.1 16.1
Forward Transconductance gfs V
DS = 10V, ID = 9A` - 35 - S
Dynamic Characteristics
Total Gate Charge Qg(10V)
VDS = 15.0V, ID = 9.0A,
VGS = 10V
11.0 15.7 -20.4
nC
Total Gate Charge Qg(4.5V) 5.4 7.7 10.0
Gate-Source Charge Qgs - 3.4 -
Gate-Drain Charge Qgd - 2.5 -
Input Capacitance Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
682 975 1268
pF Reverse Transfer Capacitance Crss 98 97 126
Output Capacitance Coss 143 204
Turn-On Delay Time td(on)
VGS = 10V, VDS = 15.0V,
RL = 1.5Ω, RG = 3.0Ω
- 5.9 -
ns
Rise Time tr - 21.3 -
Turn-Off Delay Time td(off) - 21.4 -
Fall Time tf - 12.4 -
Gate Resistance Rg f=1 MHz - 1.6 3.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD I
S = 1.0A, VGS = 0V - 0.72 1.0 V
Body Diode Reverse Recovery Time trr I
F = 9.0A, dl/dt = 100A/μs - 27.2 - ns
Body Diode Reverse Recovery Charge Qrr - 11.5 - nC
Note :
1. Surface mounted RF4 board with 2oz. Copper. Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj =25℃, L = 1.0mH, IAS = 8A, VDD = 15V, VGS = 10V.
3. T < 10sec.
July. 2010. Version 1.0 MagnaChip Semiconductor Ltd.
3
MDS5601 – Dual N-Channel Trench MOSFET
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
12345
0
4
8
12
16
20
VGS, Gate-Source Voltage [V]
TA=25℃
Notes :※
VDS = 10V
ID, Drain Current [A]
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Notes :※
1. VGS = 10 V
2. ID = 5.8 A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
0.00.51.01.52.02.53.0
0
10
20
30
40
50
5.0V 3.5V
VGS = 10V 4.5V
8.0V
4.0V
3.0V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
5 10152025
0
4
8
12
16
20
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [m]
ID, Drain Current [A]
2345678910
0
20
40
60
80
100
Notes :※
ID = 9A
TA = 25℃
RDS(ON) [mΩ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
10-1
100
101
TA=25℃
Notes :※
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
July. 2010. Version 1.0 MagnaChip Semiconductor Ltd.
4
MDS5601 – Dual N-Channel Trench MOSFET
10-1 100101102
10-2
10-1
100
101
102
100 s
10 s
1 s
100 μs
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R DS(on)
Single Pulse
RthJA=62.5 /W℃
TA=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
0102030
0.0
200.0p
400.0p
600.0p
800.0p
1.0n
1.2n
1.4n
1.6n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Notes ;※
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [F]
VDS, Drain-Source Voltage [V]
25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
ID, Drain Current [A]
TA, Case Temperature [ ]℃
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
Notes :※
Duty Factor, D=t1/t2
PEAK TJ = PDM * ZθJA
* RθJA
(t) + TA
RΘJA
=62.5 /W℃
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
ZθJA
(t), Thermal Response
t1, Rectangular Pulse Duration [sec]
0 4 8 12 16 20
0
2
4
6
8
10
VDS = 15V
Note : I※D = 9A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
July. 2010. Version 1.0 MagnaChip Semiconductor Ltd.
5
MDS5601 – Dual N-Channel Trench MOSFET
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
July. 2010. Version 1.0 MagnaChip Semiconductor Ltd.
6
MDS5601 – Dual N-Channel Trench MOSFET
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.
