MIXERS - SUB-HARMONIC - CHIP
3
3 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC266
v03.0907
General Description
Features
Functional Diagram
Input IP3: Up to +17 dBm
Sub-Harmonically Pumped (x2) LO
Small Size: 1.34 x 1.49 x 0.01 mm
Electrical Speci cations, TA = +25° C, LO Drive = +12 dBm
Typical Applications
The HMC266 is ideal for:
• 23, 26, & 38 GHz Point-to-Point Radios
• LMDS
• SATCOM
The HMC266 chip is a broadband GaAs MMIC
sub-harmonically pumped (x2) balanced passive
mixer which can be used as an upconverter or
downconverter in a small overall chip area of 1.9 mm2.
The 2LO to RF isolation is excellent eliminating the
need for additional  ltering. All data is with the chip in
a 50 ohm test  xture connected via 0.076 mm (3 mil)
ribbon bonds of minimal length <0.31 mm (<12 mils).
These devices are much smaller and more reliable
than hybrid diode mixer designs.
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Parameter IF = 1 GHz Units
Min. Typ. Max.
Frequency Range, RF 20 - 40 GHz
Frequency Range, LO 10 - 20 GHz
Frequency Range, IF 1 - 3 GHz
Conversion Loss 12 16 dB
Noise Figure (SSB) 12 16 dB
2LO to RF Isolation 42 52 dB
LO to RF Isolation 20 24 dB
2LO to IF Isolation 50 60 dB
RF to IF Isolation 16 22 dB
LO to IF Isolation 48 55 dB
IP3 (Input) 10 13 dBm
1 dB Compression (Input) 0 +4 dBm
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
OBSOLETE
MIXERS - SUB-HARMONIC - CHIP
3
3 - 29
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs.
Temperature @ LO = +12 dBm Isolation @ LO = +12 dBm
Conversion Gain vs. LO Drive Return Loss @ LO = +12 dBm
IF Bandwidth @ LO = +12 dBm
Upconverter Performance
Conversion Gain @ LO = +12 dBm
-20
-15
-10
-5
0
15 20 25 30 35 40
-55C
+25C
+85C
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-80
-70
-60
-50
-40
-30
-20
-10
0
15 20 25 30 35 40
ISOLATION (dB)
RF FREQUENCY (GHz)
RF/IF
LO/RF
LO/IF 2LO/RF
2LO/IF
-20
-15
-10
-5
0
01234
Conversion Gain
IF Return Loss
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
15 20 25 30 35 40
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
-20
-15
-10
-5
0
15 20 25 30 35 40
CONVERSION GAIN (dB)
RF FREQUENCY (GHz)
+16dBm +10dBm
+14dBm
+12dBm
+8dBm
-20
-15
-10
-5
0
0 5 10 15 20 25 30 35 40
LO/RL
RF/RL
RETURN LOSS (dB)
FREQUENCY (GHz)
HMC266
v03.0907
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
OBSOLETE
MIXERS - SUB-HARMONIC - CHIP
3
3 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MxN Spurious Outputs
as a Down Converter
Input IP3 vs. LO Drive
Input IP3 vs.
Temperature @ LO = +12 dBm
Input IP2 vs. LO Drive
Input IP2 vs.
Temperature @ LO = +12 dBm
P1dB vs.
Temperature @ LO = +12 dBm
nLO
mRF ±5 ±4 ±3 ±2 ±1 0
-3
-2 67
-1 50 29 70
012319
1x636
2637966
369
RF = 27 GHz @ -10 dBm
LO = 13 GHz @ +12 dBm drive level
All values in dBc below IF power level
80
85
90
95
100
20 25 30 35 40
-55C
+25C
+85C
IP2 (dBm)
RF FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
20 25 30 35 40
-55C
+25C
+85C
INPUT P1dB (dBm)
RF FREQUENCY (GHz)
80
85
90
95
100
20 25 30 35 40
+12 dBm
+14 dBm
+16 dBm
IP2 (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
20 25 30 35 40
-55C
+25C
+85C
IP3 (dBm)
RF FREQUENCY (GHz)
0
5
10
15
20
20 25 30 35 40
+12 dBm
+14 dBm
+16 dBm
IP3 (dBm)
RF FREQUENCY (GHz)
HMC266
v03.0907
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
OBSOLETE
MIXERS - SUB-HARMONIC - CHIP
3
3 - 31
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC266
v03.0907
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Outline Drawing
Absolute Maximum Ratings
RF / IF Input +13 dBm
LO Drive +23 dBm
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BOND PAD SPACING CENTER TO CENTER IS .006”.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information [1]
Standard Alternate
WP-3 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
OBSOLETE
MIXERS - SUB-HARMONIC - CHIP
3
3 - 32
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC266
v03.0907
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Pad Number Function Description Interface Schematic
1RF This pad is AC coupled
and matched to 50 Ohms.
2IF This pad is DC coupled
and matched to 50 Ohms.
3LO This pad is AC coupled
and matched to 50 Ohms.
Die Bottom GND .
Pad Descriptions
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
OBSOLETE
MIXERS - SUB-HARMONIC - CHIP
3
3 - 33
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin  lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin  lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC266
v03.0907
GaAs MMIC SUB-HARMONICALLY
PUMPED MIXER, 20 - 40 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
OBSOLETE
Mouser Electronics
Authorized Distributor
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HMC266