SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 2 - OCTOBER 1997 ✪
FEATURES:
•High current capability
•Low VF
APPLICATIONS:
•Mobile telecomms, PCMIA & SCSI
•DC-DC Conversion
PARTMARKING DETAILS : ZS1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage VR40 V
Forward Current IF1000 mA
Forward Voltage @ IF = 1000mA(typ) VF425 mV
Average Peak Forward Current;D.C.= 50% IFAV 1750 mA
Non Repetitive Forward Current t≤100µs
t≤10ms
IFSM 12
5.2 A
A
Power Dissipation at Tamb
=25°C P
tot 500 mW
Storage Temperature Range Tstg -55 to + 150 ° C
Junction Temperature Tj125 ° C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage V(BR)R 40 60 V IR=300µA
Forward Voltage VF240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 1000mA,Ta= 100° C
*
Reverse Current IR50 100 µAVR= 30V
Diode Capacitance CD25 pF f= 1MHz,VR=25V
Reverse Recovery
Time trr 12 ns switched from
IF = 500mA to I
R =
500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%
ZHCS1000
1
3
C
1
A
3
2
SOT23
0
75 125
1101000 30
0
030
VF - Forward Voltage (V)
IFv VF
1m
IF - Forward Current (A)
IF(av) - Avg Fwd Cur (A)
0
TC - Case Temperature (°C)
IF(av) v TC
Ta - Ambient Temp (°C)
125
75
VR - Reverse Voltage (V)
Tav VR
+50° C
+25°C
IR - Reverse Current (A)
+100°C
10n
VR - Reverse Voltage (V)
IRv VR
PF(av) - Avg Pwr Diss (W)
0
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
CD - Diode Capacitance (pF)
200
100
0
VR - Reverse Voltage (V)
CDv VR
Rth=100° C/W
-55°C
+125°C
10 20
+25°C
+125°C
10 20
-55° C
85 95 105 115
DC
D=0.5
D=0.2
D=0.1
D=0.05 DC
D=0.5
D=0.2
D=0.1
D=0.05
Rth=200° C/W
Rth=300° C/W
100
100n
1u
10u
100u
1m
10m
100m
Typical Typical
Tj=125°C
Typical
0.1 0.2 0.3 0.4 0.5 0.6
10m
100m
1
10
0.4 0.8 1.2
0.2
0.4
0.6
0.2
0.4
0.6
0.8
F(av)
PF(av)
=I
x
VF
p
t
1
t1
D=t /tpIF(pk)
IF(av)
=D x
IF(pk)
p
t
1
t1
D=t /tpIF(pk)
IF(av)=D x IF(pk)
ZHCS1000
TYPICAL CHARACTERISTICS
ZHCS1000
TYPICAL CHARACTERISTICS
* Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate.
MAXIMUM TRANSIENT THERMAL RESISTANCE
