VUO98-14NO7 3~ Rectifier Standard Rectifier Module VRRM = 1400 V I DAV = 105 A I FSM = 750 A 3~ Rectifier Bridge Part number VUO98-14NO7 EG 1 ~ ~ ~ K10 L9 A1 PS 18 Features / Advantages: Applications: Package: ECO-PAC2 Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 9 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a VUO98-14NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1500 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1400 V IR reverse current VR = 1400 V TVJ = 25C 100 A VR = 1400 V TVJ = 150C 1.5 mA TVJ = 25C 1.14 V 1.48 V 1.06 V VF IF = forward voltage drop min. 40 A typ. I F = 120 A IF = TVJ = 125 C 40 A I F = 120 A TC = 115C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 105 A TVJ = 150 C 0.81 V d= for power loss calculation only Ptot 1.51 T VJ = 150 C 5.9 m 0.7 K/W 0.3 K/W TC = 25C 175 W t = 10 ms; (50 Hz), sine TVJ = 45C 750 A t = 8,3 ms; (60 Hz), sine VR = 0 V 810 A t = 10 ms; (50 Hz), sine TVJ = 150 C 640 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 690 t = 10 ms; (50 Hz), sine TVJ = 45C 2.82 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.73 kAs TVJ = 150 C 2.05 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 1.98 kAs 11 pF 20130327a VUO98-14NO7 Package Ratings ECO-PAC2 Symbol I RMS Definition Conditions RMS current per terminal min. Tstg storage temperature T VJ virtual junction temperature mounting torque 1.5 typ. max. 100 Unit A -40 125 C -40 150 C 2 Nm Weight MD d Spp/App d Spb/Apb VISOL 24 creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 10.0 mm 3000 V 2500 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL 1 mA Logo Made in Germany Circuit Diagram YYCW Lot# XXX XX-XXXXX Product number Date Code Ordering Standard Part Number VUO98-14NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO98-14NO7 * on die level Delivery Mode Box Code No. 494518 T VJ = 150 C Rectifier V 0 max threshold voltage 0.81 V R 0 max slope resistance * 4.6 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 25 Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a VUO98-14NO7 1.55 0.2 1.55 0.2 9.4 0.2 E G I K 10 11 12 B D F H J 4 5 6 13 14 15 M 45 12 0.2 15.8 0.2 4.3 O C 1 2 3 0.2 34.3 0.2 A O R T W 7 8 9 25 0.2 3.3 0.2 5.7 0.2 31.6 0.1 1.55 0.2 10.95 0.2 3.3 0.2 Outlines ECO-PAC2 16 17 18 L N P S V X 2 8 1 8.3 35.7 20.3 0.2 1.5 43 51 0.2 EG 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ ~ K10 L9 A1 PS 18 Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a VUO98-14NO7 Rectifier 700 160 50 Hz 0.8 x V RRM 10000 VR = 0 V 600 120 2 500 IF It TVJ = 45C IFSM 80 [A] 2 400 40 TVJ = 150C 1000 [A s] TVJ = 150C [A] TVJ = 125C 150C TVJ = 45C 300 TVJ = 25C 0 0.4 0.8 1.2 1.6 200 10-3 2.0 100 10-2 10-1 100 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 50 Ptot 30 140 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 40 2 DC = 0.6 KW 1 KW 2 KW 4 KW 8 KW 1 120 0.8 KW 0.5 0.4 100 IF(AV)M 0.33 80 0.17 [A] 0.08 60 [W] 20 40 10 20 0 0 0 10 20 30 40 0 25 50 75 100 125 0 150 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 0.8 Constants for ZthJC calculation: 0.6 ZthJC 0.4 [K/W] 0.2 i Rth (K/W) ti (s) 1 0.09 0.012 2 0.05 0.007 3 0.32 0.036 4 0.24 0.102 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130327a