VUO98-14NO7
3~ Rectifier Bridge
Standard Rectifier Module
~
K10
EG 1
~
L9
~
A1 PS 18
Part number
VUO98-14NO7
Features / Advantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
ECO-PAC2
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 9 mm
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
RRM
1400
I105
FSM
750
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130327aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO98-14NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.14
R0.7 K/W
R
min.
105
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
115
P
tot
175 WT = 25°C
C
RK/W0.3
40
1400
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.48
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
150
r
F
5.9 mΩ
V1.06T = °C
VJ
I = A
F
V
40
1.51
I = A
F
120
I = A
F
120
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1400
max. re pe titive reverse bl ocking vol tage T = 25°C
VJ
C
J
11
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
750
810
2.05
1.98
A
A
A
A
640
690
2.82
2.73
1400
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1500
IXYS reserves the right to change limits, conditions and dimensions. 20130327aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO98-14NO7
Ratings
XXX XX-XXXXX
YYCW Lot#
Made in Germany
Circuit Diagram
Product number Date Code
Logo
Package
T
VJ
°C
M
D
Nm2
mounting torque 1.5
T
stg
°C125
storage temperature -40
Weight g24
Symbol Definition typ. max.min.Conditions
virt ua l j un ction temperature
Unit
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
6.0
10.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 100 A
per terminal
150-40
terminal to terminal
ECO-PAC2
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO98-14NO7 494518Box 25VUO98-14NO7Standard
2500
3000
ISOL
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 4.6
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130327aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO98-14NO7
1.55 ±0.2
10.95 ±0.2
3.3 ±0.2
5.7 ±0.2
34.3 ±0.2
15.8 ±0.2
1.55 ±0.2
1.55 ±0.2
9.4 ±0.2
3.3 ±0.2
12 ±0.2
31.6 ±0.1
25 ±0.2
1.5
1
8
2
43
8.3
51 ±0.2
20.3 ±0.2
35.7°
45°
Ø 4.3 ±0.2
BD F HJ
MO R TW
ACE G I K
LNP SVX
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
~
K10
EG 1
~
L9
~
A1 PS 18
Outlines ECO-PAC2
IXYS reserves the right to change limits, conditions and dimensions. 20130327aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO98-14NO7
011
100
1000
10000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6 2.0
0
40
80
120
160
10
-3
10
-2
10
-1
10
0
200
300
400
500
600
700
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 25 50 75 100 125 1500 10203040
0
10
20
30
40
50
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
tversustimeperdiode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.09 0.012
2 0.05 0.007
3 0.32 0.036
4 0.24 0.102
0.8 x V
RRM
50 Hz
T
VJ
=25°C
T
VJ
=45°C T
VJ
=45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=150°C
T
VJ
=150°C
T
VJ
=
125°C
150°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130327aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
