MCH6626
Rev.0 I Page 1 of 6 I www.onsemi.com
Features
•The MCH6626 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
•Excellent ON-resistance characteristic.
•2.5V drive.
MCH6626
Package Dimensions
unit : mm
2173A
[MCH6626]
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.250.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
123
654
32
546
(Bottom view)
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage VDSS 20 --20 V
Gate-to-Source Voltage VGSS ±10 ±10 V
Drain Current (DC) ID1.6 --1.0 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 6.4 --4.0 A
Allowable Power Dissipation PD
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.8 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[N-channel]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 20 V
Zero-Gate Voltage Drain Current IDSS VDS=20V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward T ransfer Admittance yfsVDS=10V, ID=0.8A 1.4 2.4 S
RDS(on)1 ID=0.8A, VGS=4V 180 230 mΩ
Static Drain-to-Source On-State Resistance RDS(on)2 ID=0.4A, VGS=2.5V 220 310 mΩ
RDS(on)3 ID=0.1A, VGS=1.8V 300 450 mΩ
Marking : WA Continued on next page.
Ordering number : ENN7918
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0 www.onsemi.com Publication Order Number:
MCH6626/D
MCH6626
Rev.0 I Page 2 of 6 I www.onsemi.com
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=10V, f=1MHz 105 pF
Output Capacitance Coss VDS=10V, f=1MHz 23 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 6 ns
Rise T ime trSee specified Test Circuit. 16 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns
Fall T ime tfSee specified Test Circuit. 8 ns
Total Gate Charge Qg VDS=10V, VGS=4V, ID=1.6A 1.4 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=1.6A 0.3 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=1.6A 0.3 nC
Diode Forward Voltage VSD IS=1.6A, VGS=0 0.92 1.2 V
[P-channel]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --20 V
Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.3 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--500mA 0.7 1.2 S
RDS(on)1 ID=--500mA, VGS=--4V 380 500 mΩ
Static Drain-to-Source On-State Resistance RDS(on)2 ID=--300mA, VGS=--2.5V 540 760 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 115 pF
Output Capacitance Coss VDS=--10V, f=1MHz 23 pF
Reverse T ransfer Capacitance Crss VDS=--10V, f=1MHz 15 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise T ime trSee specified Test Circuit. 6 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 15 ns
Fall T ime tfSee specified Test Circuit. 7 ns
Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--1A 1.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1A 0.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1A 0.3 nC
Diode Forward Voltage VSD IS=--1A, VGS=0 --0.9 --1.5 V
Electrical Connection
Switching Time Test Circuit
[N-channel] [P-channel]
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=800mA
RL=12.5Ω
VDD=10V
VOUT
MCH6626
VIN
4V
0V
VIN
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --500mA
RL=20Ω
VDD= --10V
VOUT
MCH6626
VIN
0V
--4V
VIN
654
123
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
MCH6626
Rev.0 I Page 3 of 6 I www.onsemi.com
[Pch]
[Pch]
[Pch]
[Pch]
[Nch]
[Nch]
[Nch]
[Nch]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
--60 --40 --20 0 20 40 60 80 100 120 140 160
0246810
IT03305
0
0
0.4
0.8
1.6
2.0
0.2
1.2
0
50
100
150
200
250
300
350
400
0
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
VGS=1.0V
1.5V
1.8V
IT02916
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS=10V
IT02917
IT03306
50
100
150
200
250
300
350
400
0
Ta=25°C
0.8A
ID=0.4A
2.5V
3.0V
4.0V
6.0V
10.0V
ID=0.8A, VGS=4.0V
ID=0.4A, VGS=2.5V
RDS(on) -- VGS
ID -- VDS
ID -- VGS
RDS(on) -- Ta
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
25°C
--25°C
75°C
Ta=75°CTa= --25°C
25°C
--
0.2
--
0.4
--
0.6
--
0.8
--
1.0
--
1.2
--
1.4
--
1.6
--
1.8
--
2.0
--60 --40 --20 0 20 40 60 80 100 120 140 160
0
--
2
--
4
--
6
--
8
--
10
RDS(on) -- VGS
IT03370
0
0
--
0.2
--
0.4
--
0.8
--
1.0
--
0.2
--
0.6
--
0.1
--
0.3
--
0.7
--
0.9
--
0.5
0
200
400
500
600
700
900
100
300
800
1000
0
200
400
500
600
700
900
100
300
800
1000
0
--
0.4
--
0.6
--
0.8
--
1.0
--
0.1
--
0.3
--
0.5
--
0.7
--
0.9
ID -- VDS
IT03368
0 0.5 1.0 1.5 2.0 2.5 3.0
ID -- VGS
VDS= --10V
25°C
75°C
25°C
--25°C
Ta=75°CTa= --25°C
IT03369
RDS(on) -- Ta
IT03371
Ta=25°C
--0.5A
ID= --0.3A
--4.0V
--3.0V
--2.5V
--2.0V
VGS= --1.5V
ID=
--
0.5A, VGS=
--
4.0V
ID=
--
0.3A, VGS=
--
2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩStatic Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
MCH6626
Rev.0 I Page 4 of 6 I www.onsemi.com
[Pch]
[Pch]
[Pch]
[Pch]
[Nch]
[Nch]
[Nch]
[Nch]
0.1 1.0
23 57 23 5
7
5
3
2
10
100
7
5
3
2
1.0
VDD=10V
VGS=4V
td(on)
td(off)
tr
tf
IT02922
IT02920
0.001 0.01
23 57 0.1
23 57 1.0
23 57 23 5
10
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
VDS=10V
75°C
25°C
Ta= --25°C
IT02921
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
10
1.0
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0
--25°C
25°C
Ta=75°C
02468101214161820
10
100
1000
7
5
3
2
7
5
3
2
f=1MHz
Ciss
Coss
Crss
IT02923
SW Time -- ID
Ciss, Coss, Crss -- VDS
y
fs -- ID
IF -- VSD
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Diode Forw ard Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
--
0.1
--
1.0
23 57 23
3
2
10
100
7
5
3
2
7
5
3
2
1.0
SW Time -- ID
td(on)
IT03374
Ciss, Coss, Crss -- VDS
IT03372
--0.01 2--0.1
357 --1.0
23 57
3
2
1.0
0.1
7
5
3
2
y
fs -- ID
IT03373
--0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2
--0.01
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
IF -- VSD
0--2--4--6 --8 --10 --12 --14 --16 --18 --20
10
100
3
2
7
5
3
2
f=1MHz
Ciss
Crss
IT03375
Ta= --25°C
75°C
VDS= --10V
25°C
Ta=75°C
25°C
--25°C
VGS=0
Coss
td(off)
tf
VDD= --10V
VGS= --4V
tr
Drain Current, ID -- A
Switching Time, SW Time -- ns
Drain Current, ID -- A
Forward Transfer Admittance,
y
fs -- S
Diode Forw ard Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
MCH6626
Rev.0 I Page 5 of 6 I www.onsemi.com
0204060 100 120 140
080
1.0
0.4
0.2
0.6
0.8
160
IT02521
[Pch, Nch]
Ambient Tamperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS=10V
ID=1.6A
IT03307
2
3
5
7
2
3
5
7
2
3
5
7
10
1.0
0.1
0.01 1.0 23 5723 57 100.1 23
IT03308
IDP=6.4A
ID=1.6A
Operation in this
area is limited by RDS(on).
100µs
100ms
DC operation
1ms
10ms
<10µs
VGS -- Qg
A S O
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
--
0.5
--
1.0
--
1.5
--
2.0
--
2.5
--
3.0
--
3.5
--
4.0 VGS -- Qg
VDS= --10V
ID= --1A
IT03376
A S O
2
3
5
7
2
3
5
7
2
3
5
7
--
10
--
1.0
--
0.1
--
0.01 --1.0 23 5723 57 --10--0.1 23
IT03377
IDP= --4.0A
ID= --1.0A
Operation in this
area is limited by RDS(on).
100ms
DC operation
1ms
10ms
<10µs
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm
2
✕0.8mm)1unit
MCH6626
Rev.0 I Page 6 of 6 I www.onsemi.com MCH6626/D
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