3.1 - 9
3.1
Preliminary Data Sheet
4 11 R0
High Current, High Voltage 600V And 1200V,
Up To 150 Amp IGBTs With FRED Diodes
IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
FEATURES
• Includes Internal FRED Diode
• Rugged Package Design
• Solder Terminals
• Very Low Saturation Voltage
• Fast Switching, Low Drive Current
• Available Screened To MIL-S-19500, TX, TXV And S Levels
• Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS @ 25°C
SCHEMATIC
Part VCE IC
Number (V) (A) VCE(sat) Type
OM120L60SB 600 150 1.8 Volts Lo Sat.
OM90L120SB 1200 140 3 Volts Lo Sat.
OM100F60SB 600 150 2.7 Volts Hi Speed
OM70F120SB 1200 140 4 Volts Hi Speed
OM90L120SB
OM70F120SB
OM120L60SB
OM100F60SB
C
E
G
3.1 - 10
3.1
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
ELECTRICAL CHARACTERISTICS: OM120L60SB
(T
C
= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 500 µA, V
CE
= 0 V V
(BR)CES
600 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat. I
CES
- - 0.5 mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C - - 2.0 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V I
GES
- - ±200 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 0.5 mA V
GE(th)
2.5 - 5.0 V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 120 A V
CE(sat)
- - 1.8 V
DYNAMIC CHARACTERISTICS
Forward Transconductance V
CE
= 10 V, I
C
= 120 A g
fs
50--S
Input Capacitance V
GE
= 0, C
iss
- 8000 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 680 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- 200 - pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-50-nS
Rise Time V
CC
= 480 V, I
C
= 120 A, t
r
- 200 - nS
Turn-Off Delay Time R
GS
= 2.7 , V
GS
= 15 V, t
d(off)
- 600 - nS
Fall Time L = 100 µH t
f
- 500 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time V
CE(clamp)
= 480 V, I
C
= 120A t
d(on)
- 1000 - nS
Fall Time V
GE
= 15 V, R
g
= 2.7 t
f
- 1000 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 52 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage I
F
= 120 A, T
j
= 25°C V
f
- - 1.85 V
I
F
= 120 A, T
j
= 125°C - - 1.50
Maximum Reverse Current V
R
= 600 V, T
C
= 25°C I
r
- - 500 µA
V
R
= 800 V, T
C
= 125°C - - 28 mA
Reverse Recovery Time I
F
= 1 A, di/dt = 200 A µ/S t
rr
--50nS
V
R
= 30 V, T
j
= 25°C
ELECTRICAL CHARACTERISTICS: OM90L120SB
(T
C
= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 6 mA, V
CE
= 0 V V
(BR)CES
1200 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat. I
CES
- - 0.6 mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C - - 2.4 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V I
GES
- - ±200 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 8 mA V
GE(th)
4.0 - 8.0 V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 90 A V
CE(sat)
- - 3.0 V
DYNAMIC CHARACTERISTICS
Forward Transconductance V
CE
= 6 V, I
C
= 90 A g
fs
50--S
Input Capacitance V
GE
= 0, C
iss
- 8500 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 400 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- 2400 - pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-80-nS
Rise Time V
CC
= 960 V, I
C
= 90 A, t
r
- 250 - nS
Turn-Off Delay Time R
GS
= 2.7 , V
GS
= 15 V, t
d(off)
- 450 - nS
Fall Time L = 100 µH t
f
- 1200 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time V
CE(clamp)
= 960 V, I
C
= 90 A t
d(on)
- 450 - nS
Fall Time V
GE
= 15 V, R
g
= 2.7 t
f
- 1200 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 54 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage I
F
= 105 A, T
j
= 25°C V
f
- - 2.55 V
I
F
= 105 A, T
j
= 125°C - - 2.15
Maximum Reverse Current V
R
= 1200 V, T
C
= 25°C I
r
- - 4.4 mA
V
R
= 960 V, T
C
= 125°C - - 28 mA
Reverse Recovery Time I
F
= 1 A, di/dt = 200 A µ/S t
rr
--60nS
V
R
= 30 V, T
j
= 25°C
3.1 - 11
3.1
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
ELECTRICAL CHARACTERISTICS: OM100F60SB
(T
C
= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 500 µA, V
CE
= 0 V V
(BR)CES
600 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat. I
CES
- - 0.5 mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C - - 2.0 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V I
GES
- - ±200 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 0.5 mA V
GE(th)
2.5 - 5.0 V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 100 A V
CE(sat)
- - 2.7 V
DYNAMIC CHARACTERISTICS
Forward Transconductance V
CE
= 10 V, I
C
= 100 A g
fs
50--S
Input Capacitance V
GE
= 0, C
iss
- 8000 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 680 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- 200 - pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-50-nS
Rise Time V
CC
= 480 V, I
C
= 100 A, t
r
- 200 - nS
Turn-Off Delay Time R
GS
= 2.7 , V
GS
= 15 V, L = 100 µH t
d(off)
- 200 - nS
Fall Time t
f
- 300 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time V
CE(clamp)
= 480 V, I
C
= 100 A t
d(on)
- 300 - nS
Fall Time V
GE
= 15 V, R
g
= 2.7 t
f
- 600 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 1.5 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage I
F
= 120 A, T
j
= 25°C V
f
- - 1.85 V
I
F
= 120 A, T
j
= 150°C - - 1.50
Maximum Reverse Current V
R
= 600 V, T
C
= 25°C I
r
- - 400 µA
V
R
= 480 V, T
C
= 125°C - - 28 mA
Reverse Recovery Time I
F
= 1 A, di/dt = 200 A µ/S t
rr
--50nS
V
R
= 30 V, T
j
= 25°C
ELECTRICAL CHARACTERISTICS: OM70L120SB
(T
C
= 25°C unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 6 mA, V
CE
= 0 V V
(BR)CES
1200 - - V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat. I
CES
- - 0.6 mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C - - 2.4 mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V I
GES
- - ±200 nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 8 mA V
GE(th)
4.0 - 8.0 V
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 70 A V
CE(sat)
- - 4.0 V
DYNAMIC CHARACTERISTICS
Forward Transconductance V
CE
= 10 V, I
C
= 70 A g
fs
50--S
Input Capacitance V
GE
= 0, C
iss
- 7600 - pF
Output Capacitance V
CE
= 25 V, C
oss
- 800 - pF
Reverse Transfer Capacitance f = 1.0 mHz C
rss
- 120 - pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time t
d(on)
-80-nS
Rise Time V
CC
= 960 V, I
C
= 70 A, t
r
- 150 - nS
Turn-Off Delay Time R
GS
= 2.7 , V
GS
= 15 V, t
d(off)
- 400 - nS
Fall Time L = 100 µH t
f
- 700 - nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-Off Delay Time V
CE(clamp)
= 600 V, I
C
= 70 A t
d(on)
- 400 - nS
Fall Time V
GE
= 15 V, R
g
= 2.7 t
f
- 1100 - nS
Turn-Off Losses L = 100 µH, T
j
= 125°C E
(OFF)
- 110 - m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage I
F
= 105 A, T
j
= 25°C V
f
- - 2.55 V
I
F
= 105 A, T
j
= 125°C - - 2.15
Maximum Reverse Current V
R
= 1200 V, T
C
= 25°C I
r
- - 4.4 mA
V
R
= 960 V, T
C
= 125°C - - 28 mA
Reverse Recovery Time I
F
= 1 A, di/dt = 200 A µ/S t
rr
--60nS
V
R
= 30 V, T
j
= 25°C
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM120L60SB OM90L120SB OM100F60SB OM70F120SB
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise noted)
IGBT
Parameters 120L60SB 90L120SB 100F60SB 70F120SB Units
VCE Drain Source Voltage 600 1200 600 1200 V
VCER Drain Gate Voltage (Rge = 20 K ) 600 1200 600 1200 V
IC@ TC= 25°C Continuous Drain Current 150 140 150 140 A
IC@ TC= 90°C Continuous Drain Current 120 90 100 70 A
ICPulsed Pulsed Drain Current 400 360 400 280 A
Junction-To-Case Linear Derating Factor 3.33 3.33 3.33 3.33 W/°C
Junction-To-Ambient Linear Derating Factor .03 .03 .03 .03 W/°C
RthJC Junction-To-Case 0.3 0.3 0.3 0.3 °C/W
RthJA Junction-To-Ambient 30 30 30 30 °C/W
Rectifier
PIV 600 1200 600 1200 V
IO120 105 120 105 A
trr 35 40 35 40 nSec
MECHANICAL OUTLINE
2.000
1.500
1.500 .250
2 PLCS.
.375.8751.3751.750
.375.030
.275
.510
.050
1.250
.625
.472
.125 DIA.
5 PLCS.
.166 DIA.
3 PLCS.
±010
±010
±010
.125
.515
MAX.
.324
TERMINAL 1
.225
.100 DIA.
3 PLCS.
CEG
