OM120L60SB Preliminary Data Sheet OM100F60SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES OM90L120SB OM70F120SB High Current, High Voltage 600V And 1200V, Up To 150 Amp IGBTs With FRED Diodes FEATURES * * * * * * * Includes Internal FRED Diode Rugged Package Design Solder Terminals Very Low Saturation Voltage Fast Switching, Low Drive Current Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs DESCRIPTION This series of hermetically packaged products feature the latest advanced IGBT technology combined with a package designed specifically for high efficiency, high current applications. They are ideally suited for Hi-Rel requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. GENERAL CHARACTERISTICS @ 25C Part Number VCE (V) IC (A) VCE(sat) Type OM120L60SB OM90L120SB OM100F60SB 600 1200 600 150 140 150 1.8 Volts 3 Volts 2.7 Volts Lo Sat. Lo Sat. Hi Speed OM70F120SB 1200 140 4 Volts Hi Speed SCHEMATIC C E G 4 11 R0 3.1 - 9 3.1 OM120L60SB OM90L120SB OM100F60SB OM70F120SB ELECTRICAL CHARACTERISTICS: OM120L60SB (TC = 25C unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Collector Emitter Breakdown Voltage, IC = 500 A, VCE = 0 V V(BR)CES 600 - - V Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. ICES - - 0.5 mA OFF CHARACTERISTICS VCE = 0.8 Max. Rat., VGE = 0, Tj = 125C - - 2.0 mA IGES - - 200 nA Gate-Threshold Voltage, VCE = VGE, IC = 0.5 mA VGE(th) 2.5 - 5.0 V Collector Emitter Saturation Voltage, VGE = 15 V, IC = 120 A VCE(sat) - - 1.8 V VCE = 10 V, IC = 120 A gfs 50 - - S VGE = 0, Ciss - 8000 - pF Output Capacitance VCE = 25 V, Coss - 680 - pF Reverse Transfer Capacitance f = 1.0 mHz Crss - 200 - pF Gate Emitter Leakage Current, VGE = 20 V, VCE = 0 V ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS td(on) - 50 - nS Rise Time Turn-On Delay Time VCC = 480 V, IC = 120 A, tr - 200 - nS Turn-Off Delay Time RGS = 2.7 , VGS = 15 V, td(off) - 600 - nS tf - 500 - nS nS Fall Time L = 100 H SWITCHING-INDUCTIVE LOAD CHARACTERISTICS Turn-Off Delay Time VCE(clamp) = 480 V, IC = 120A Fall Time Turn-Off Losses td(on) - 1000 - VGE = 15 V, Rg = 2.7 tf - 1000 - nS L = 100 H, Tj = 125C E(OFF) - 52 - m Ws SOURCE DRAIN DIODE CHARACTERISTICS IF = 120 A, Tj = 25C Maximum Forward Voltage IF = 120 A, Tj = 125C VR = 600 V, TC = 25C Maximum Reverse Current VR = 800 V, TC = 125C IF = 1 A, di/dt = 200 A /S Reverse Recovery Time VR = 30 V, Tj = 25C Vf Ir trr - - 1.85 - - 1.50 V - - 500 A - - 28 mA - - 50 nS Typ. Max. Unit ELECTRICAL CHARACTERISTICS: OM90L120SB (TC = 25C unless otherwise specified) Characteristic Symbol Min. Collector Emitter Breakdown Voltage, IC = 6 mA, VCE = 0 V V(BR)CES 1200 - - V Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. ICES - - 0.6 mA OFF CHARACTERISTICS VCE = 0.8 Max. Rat., VGE = 0, Tj = 125C - - 2.4 mA IGES - - 200 nA Gate-Threshold Voltage, VCE = VGE, IC = 8 mA VGE(th) 4.0 - 8.0 V Collector Emitter Saturation Voltage, VGE = 15 V, IC = 90 A VCE(sat) - - 3.0 V VCE = 6 V, IC = 90 A gfs 50 - - S VGE = 0, Ciss - 8500 - pF Output Capacitance VCE = 25 V, Coss - 400 - pF Reverse Transfer Capacitance f = 1.0 mHz Crss - 2400 - pF Gate Emitter Leakage Current, VGE = 20 V, VCE = 0 V 3.1 ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS td(on) - 80 - nS Rise Time Turn-On Delay Time VCC = 960 V, IC = 90 A, tr - 250 - nS Turn-Off Delay Time RGS = 2.7 , VGS = 15 V, td(off) - 450 - nS tf - 1200 - nS nS Fall Time L = 100 H SWITCHING-INDUCTIVE LOAD CHARACTERISTICS Turn-Off Delay Time Fall Time Turn-Off Losses VCE(clamp) = 960 V, IC = 90 A td(on) - 450 - VGE = 15 V, Rg = 2.7 tf - 1200 - nS L = 100 H, Tj = 125C E(OFF) - 54 - m Ws SOURCE DRAIN DIODE CHARACTERISTICS Maximum Forward Voltage IF = 105 A, Tj = 25C IF = 105 A, Tj = 125C Maximum Reverse Current VR = 1200 V, TC = 25C VR = 960 V, TC = 125C Reverse Recovery Time IF = 1 A, di/dt = 200 A /S VR = 30 V, Tj = 25C Vf Ir trr 3.1 - 10 - - 2.55 - - 2.15 V - - 4.4 mA - - 28 mA - - 60 nS OM120L60SB OM90L120SB OM100F60SB OM70F120SB ELECTRICAL CHARACTERISTICS: OM100F60SB (TC = 25C unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Collector Emitter Breakdown Voltage, IC = 500 A, VCE = 0 V V(BR)CES 600 - - V Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. ICES - - 0.5 mA OFF CHARACTERISTICS VCE = 0.8 Max. Rat., VGE = 0, Tj = 125C - - 2.0 mA IGES - - 200 nA Gate-Threshold Voltage, VCE = VGE, IC = 0.5 mA VGE(th) 2.5 - 5.0 V Collector Emitter Saturation Voltage, VGE = 15 V, IC = 100 A VCE(sat) - - 2.7 V VCE = 10 V, IC = 100 A gfs 50 - - S VGE = 0, Ciss - 8000 - pF Output Capacitance VCE = 25 V, Coss - 680 - pF Reverse Transfer Capacitance f = 1.0 mHz Crss - 200 - pF td(on) - 50 - nS tr - 200 - nS td(off) - 200 - nS tf - 300 - nS nS Gate Emitter Leakage Current, VGE = 20 V, VCE = 0 V ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS Turn-On Delay Time Rise Time VCC = 480 V, IC = 100 A, Turn-Off Delay Time RGS = 2.7 , VGS = 15 V, L = 100 H Fall Time SWITCHING-INDUCTIVE LOAD CHARACTERISTICS Turn-Off Delay Time VCE(clamp) = 480 V, IC = 100 A Fall Time Turn-Off Losses td(on) - 300 - VGE = 15 V, Rg = 2.7 tf - 600 - nS L = 100 H, Tj = 125C E(OFF) - 1.5 - m Ws SOURCE DRAIN DIODE CHARACTERISTICS IF = 120 A, Tj = 25C Maximum Forward Voltage IF = 120 A, Tj = 150C VR = 600 V, TC = 25C Maximum Reverse Current VR = 480 V, TC = 125C IF = 1 A, di/dt = 200 A /S Reverse Recovery Time VR = 30 V, Tj = 25C Vf Ir trr - - 1.85 - - 1.50 V - - 400 A - - 28 mA - - 50 nS Typ. Max. Unit ELECTRICAL CHARACTERISTICS: OM70L120SB (TC = 25C unless otherwise specified) Characteristic Symbol Min. Collector Emitter Breakdown Voltage, IC = 6 mA, VCE = 0 V V(BR)CES 1200 - - V Zero Gate Voltage Drain Current , VGE = 0, VCE = Max. Rat. ICES - - 0.6 mA OFF CHARACTERISTICS VCE = 0.8 Max. Rat., VGE = 0, Tj = 125C - - 2.4 mA IGES - - 200 nA Gate-Threshold Voltage, VCE = VGE, IC = 8 mA VGE(th) 4.0 - 8.0 V Collector Emitter Saturation Voltage, VGE = 15 V, IC = 70 A VCE(sat) - - 4.0 V VCE = 10 V, IC = 70 A gfs 50 - - S VGE = 0, Ciss - 7600 - pF Output Capacitance VCE = 25 V, Coss - 800 - pF Reverse Transfer Capacitance f = 1.0 mHz Crss - 120 - pF Gate Emitter Leakage Current, VGE = 20 V, VCE = 0 V ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Forward Transconductance Input Capacitance SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS td(on) - 80 - nS Rise Time Turn-On Delay Time VCC = 960 V, IC = 70 A, tr - 150 - nS Turn-Off Delay Time RGS = 2.7 , VGS = 15 V, td(off) - 400 - nS tf - 700 - nS nS Fall Time L = 100 H SWITCHING-INDUCTIVE LOAD CHARACTERISTICS Turn-Off Delay Time Fall Time Turn-Off Losses VCE(clamp) = 600 V, IC = 70 A td(on) - 400 - VGE = 15 V, Rg = 2.7 tf - 1100 - nS L = 100 H, Tj = 125C E(OFF) - 110 - m Ws SOURCE DRAIN DIODE CHARACTERISTICS Maximum Forward Voltage IF = 105 A, Tj = 25C IF = 105 A, Tj = 125C Maximum Reverse Current VR = 1200 V, TC = 25C VR = 960 V, TC = 125C Reverse Recovery Time IF = 1 A, di/dt = 200 A /S VR = 30 V, Tj = 25C 3.1 - 11 Vf Ir trr - - 2.55 - - 2.15 V - - 4.4 mA - - 28 mA - - 60 nS 3.1 OM120L60SB OM90L120SB OM100F60SB OM70F120SB ABSOLUTE MAXIMUM RATINGS IGBT (TC = 25C unless otherwise noted) Parameters VCE VCER 120L60SB 90L120SB 100F60SB 70F120SB Units 600 1200 600 1200 V Drain Source Voltage Drain Gate Voltage (Rge = 20 K ) 600 1200 600 1200 V IC @ TC = 25C Continuous Drain Current 150 140 150 140 A IC @ TC = 90C Continuous Drain Current 120 90 100 70 A IC Pulsed Pulsed Drain Current 400 360 400 280 A Junction-To-Case Linear Derating Factor 3.33 3.33 3.33 3.33 W/C Junction-To-Ambient Linear Derating Factor .03 .03 .03 .03 W/C RthJC Junction-To-Case 0.3 0.3 0.3 0.3 C/W RthJA Junction-To-Ambient 30 30 30 30 C/W PIV 600 1200 600 1200 V IO 120 105 120 105 A trr 35 40 35 40 nSec Rectifier MECHANICAL OUTLINE 2.000 .515 MAX. .250 2 PLCS. 1.500 .050 .125 DIA. 5 PLCS. 3.1 1.250 C E G 1.500 .625 .125 .472 TERMINAL 1 010 .166 DIA. 3 PLCS. .324 .375 .875 1.375 010 .510 .275 .030 .375 010 1.750 .100 DIA. 3 PLCS. .225 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246