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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDPC8016S PowerTrench(R) Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to Max rDS(on) = 4.7 m at VGS = 4.5 V, ID = 18 A enable easy placement and routing of synchronous buck Q2: N-Channel SyncFETTM (Q2) have been designed to provide optimal power converters. The control MOSFET (Q1) and synchronous Max rDS(on) = 1.4 m at VGS = 10 V, ID = 35 A efficiency. Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 32 A Applications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing Communications MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing General Purpose Point of Load RoHS Compliant PIN1 PIN1 PAD10 V+(HSD) HSG SW GR PAD9 GND(LSS) V+ V+ Top Pin Name GR SW SW SW V+ SW SW V+ SW Bottom Power Clip 5X6 Description LSG LSG HSG Pin Name Description Pin 1 HSG High Side Gate 3,4,10 V+(HSD) High Side Drain 2 GR Gate Return 5,6,7 SW Switching Node, Low Side Drain 9 8 Name LSG Description Low Side Gate GND(LSS) Low Side Source MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID Q1 25Note5 PD TJ, TSTG Units V V 12 12 -Continuous TC = 25 C 60 100 -Continuous TA = 25 C 20Note1a 35Note1b TA = 25 C (Note 4) 75 140 -Pulsed EAS Q2 25 Single Pulse Avalanche Energy (Note 3) 73 216 Power Dissipation for Single Operation TC = 25 C 21 42 Power Dissipation for Single Operation TA = 25 C 2.1Note1a 2.3 Note1b Operating and Storage Junction Temperature Range -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case 6.0 3.0 RJA Thermal Resistance, Junction to Ambient 60Note1a 55Note1b RJA Thermal Resistance, Junction to Ambient 130Note1c 120Note1d (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 1 C/W www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip October 2013 Device Marking 05OD/15OD Device FDPC8016S Package Power Clip 56 Reel Size 13 " Tape Width 12 mm Quantity 3000 units Electrical Characteristics TJ = 25 C unless otherwise noted Symbol Parameter Test Conditions Type Min 25 25 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 Q2 BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C ID = 10 mA, referenced to 25 C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V Q1 Q2 1 500 A A IGSS Gate to Source Leakage Current VGS = 12 V/-8 V, VDS= 0 V VGS = 12 V/-8 V, VDS= 0 V Q1 Q2 100 100 nA nA 2.5 2.5 V V 24 28 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS = VDS, ID = 1 mA Q1 Q2 VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C ID = 10 mA, referenced to 25 C Q1 Q2 -4 -3 VGS = 10V, ID = 20 A VGS = 4.5 V, ID = 18 A VGS = 10 V, ID = 20 A,TJ =125 C Q1 2.8 3.4 3.9 3.8 4.7 5.3 VGS = 10V, ID = 35 A VGS = 4.5 V, ID = 32 A VGS = 10 V, ID = 35 A ,TJ =125 C Q2 1.1 1.3 1.5 1.4 1.7 1.9 VDS = 5 V, ID = 20 A VDS = 5 V, ID = 35 A Q1 Q2 182 241 Q1 Q2 1695 4715 2375 6600 pF Q1 Q2 495 1195 710 1675 pF Q1 Q2 54 159 100 290 pF 0.4 0.5 1.2 1.5 rDS(on) gFS Drain to Source On Resistance Forward Transconductance 0.8 1.1 1.3 1.5 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q1: VDS = 13 V, VGS = 0 V, f = 1 MHZ Q2: VDS = 13 V, VGS = 0 V, f = 1 MHZ Q1 Q2 0.1 0.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 Q1: VDD = 13 V, ID = 20 A, RGEN = 6 Q2: VDD = 13 V, ID = 35 A, RGEN = 6 VGS = 0 V to 10 V Q1 V = 13 V, ID VGS = 0 V to 4.5 V DD = 20 A Q2 VDD = 13 V, ID = 35 A 2 Q1 Q2 8 13 16 24 ns Q1 Q2 2 4 10 10 ns Q1 Q2 24 38 38 61 ns Q1 Q2 2 3 10 10 ns Q1 Q2 25 67 35 94 nC Q1 Q2 11 31 16 44 nC Q1 Q2 3.4 10 nC Q1 Q2 2.2 6.3 nC www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Package Marking and Ordering Information Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 0.8 1.2 1.2 V Q1 Q2 25 33 40 53 ns Q1 Q2 10 31 20 50 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 20 A VGS = 0 V, IS = 35 A (Note 2) (Note 2) Q1 IF = 20 A, di/dt = 100 A/s Q2 IF = 35 A, di/dt = 200 A/s Notes: 1.RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. b. 55 C/W when mounted on a 1 in2 pad of 2 oz copper a. 60 C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G d. 120 C/W when mounted on a minimum pad of 2 oz copper c. 130 C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2 Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A. Q2: EAS of 216 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 39 A. 4. Pulsed Id limited by junction temperature, td<=10 us. Please refer to SOA curve for more details. 5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied. (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 3 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Electrical Characteristics TJ = 25 C unless otherwise noted 75 5 ID, DRAIN CURRENT (A) 60 VGS = 4.5 V 45 VGS = 3.5 V VGS = 3 V 30 VGS = 2.5 V 15 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 4 VGS = 2.5 V 3 2 VGS = 3 V 1 0 15 30 45 60 75 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 12 ID = 20 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 9 ID = 20 A 6 TJ = 125 oC 3 TJ = 25 oC 0 -50 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX IS, REVERSE DRAIN CURRENT (A) 75 VDS = 5 V 60 ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3.5 V 45 TJ = 150 oC 30 TJ = 25 oC 15 TJ = -55 oC 0 1.0 1.5 2.0 2.5 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 4 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 10000 ID = 20 A 8 VDD = 13 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V 4 VDD = 15 V 1000 Ciss Coss 100 f = 1 MHz VGS = 0 V 2 0 0 6 12 18 24 10 0.1 30 1 Figure 7. Gate Charge Characteristics 25 Figure 8. Capacitance vs. Drain to Source Voltage 70 30 ID, DRAIN CURRENT (A) 60 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 50 VGS = 10 V 40 VGS = 4.5 V 30 20 o RJC = 6.0 C/W 10 1 0.001 0.01 0.1 1 10 0 25 100 50 75 5000 P(PK), PEAK TRANSIENT POWER (W) 100 10 s 100 s THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms DC SINGLE PULSE TJ = MAX RATED RJC = 6.0 oC/W CURVE BENT TO MEASURED DATA TC = 25 oC 0.1 0.1 150 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 500 1 125 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 100 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) IAS, AVALANCHE CURRENT (A) Crss 1 10 80 o RJC = 6.0 C/W 1000 o TC = 25 C 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 SINGLE PULSE 5 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: ZJC (t) = r(t) x RJc RJC = 6.0 oC/W DUTY FACTOR: D = t1/ t2 TJ -TC = PDM x ZJC(t) SINGLE PULSE 0.01 0.005 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 6 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted 140 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6.0 VGS = 10 V ID, DRAIN CURRENT (A) 120 VGS = 4.5 V 100 VGS = 3.5 V VGS = 3 V 80 60 VGS = 2.5 V 40 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 4.5 3.0 VGS = 3 V 1.5 VGS = 3.5 V 0.8 0 VGS = 10 V 20 40 60 80 100 120 140 ID, DRAIN CURRENT (A) Figure 14. On- Region Characteristics Figure 15. Normalized on-Resistance vs. Drain Current and Gate Voltage 5 ID = 35 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V 0.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 ID = 35 A 3 2 TJ = 125 oC 1 TJ = 25 oC 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) 120 TJ = 25 oC TJ = 125 oC 80 TJ = -55 oC 60 40 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 20 0 2 3 200 100 4 5 6 7 8 9 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Transfer Characteristics (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 3 Figure 17. On-Resistance vs. Gate to Source Voltage VDS = 5 V 100 2 VGS, GATE TO SOURCE VOLTAGE (V) 140 1 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 -50 Figure 16. Normalized On-Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 2.5 V Figure 19. Source to Drain Diode Forward Voltage vs. Source Current 7 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25 C unless otherwise noted 10000 ID = 35 A Ciss 8 VDD = 13 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V 4 VDD = 15 V 1000 Coss 100 10 0.1 0 0 20 40 60 Crss f = 1 MHz VGS = 0 V 2 80 1 10 25 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 21. Capacitance vs. Drain to Source Voltage Figure 20. Gate Charge Characteristics 160 50 IAS, AVALANCHE CURRENT (A) 140 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 120 VGS = 10 V 100 80 Limited by Package 60 o VGS = 4.5 V RJC = 3.0 C/W 40 20 1 0.001 0.01 0.1 1 10 100 0 25 1000 50 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 150 10000 10 s 100 100 s THIS AREA IS LIMITED BY rDS(on) 1 ms 10 ms SINGLE PULSE TJ = MAX RATED RJC = 3.0 oC/W DC CURVE BENT TO MEASURED DATA TC = 25 oC 0.1 0.1 125 Figure 23. Maximum Continuous Drain Current vs. Case Temperature 1000 1 100 TC, CASE TEMPERATURE ( C) Figure 22. Unclamped Inductive Switching Capability 10 75 o tAV, TIME IN AVALANCHE (ms) 1 10 80 o RJC = 3.0 C/W o TC = 25 C 1000 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 25. Single Pulse Maximum Power Dissipation Figure 24. Forward Bias Safe Operating Area (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 SINGLE PULSE 8 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25C unless otherwise noted r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: ZJC (t) = r(t) x RJc RJC = 3.0 oC/W DUTY FACTOR: D = t1/ t2 TJ -TC = PDM x ZJC(t) SINGLE PULSE 0.003 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction-to-Case Transient Thermal Response Curve (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 9 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25 C unless otherwise noted SyncFETTM Schottky body diode Characteristics Fairchild's SyncFETTM process embeds a Schottky diode in parallel with PowerTrench(R) MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverses recovery characteristic of the FDPC8016S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 40 35 CURRENT (A) 30 25 20 di / dt = 200 A/S 15 10 5 0 -5 50 100 150 200 250 300 350 400 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 27. FDPC8016S SyncFETTM Body Diode Reverse Recovery Characteristic (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 10 Figure 28. SyncFETTM Body Diode Reverse Leakage vs. Drain-source Voltage 10 www.fairchildsemi.com FDPC8016S PowerTrench(R) Power Clip Typical Characteristics (continued) FDPC8016S PowerTrench(R) Power Clip Dimensional Outline and Pad Layout 5.00 4.56 4.20 5.10 4.90 0.10 C 2X PKG CL 4 A 1.27 4 B 2 3 1 3.30 1 2.48 2.08 1.01 6.60 PKG 0.00 6.10 5.90 CL 0.40 2.65 0.83 1.43 1.98 2.48 0.82 3.30 6 5 2X 7 8 0.75 TOP VIEW 1.53 1.01 SEE DETAIL A 1.08 1.48 1.53 2.29 8 0.10 C 0.00 PIN #1 INDICATOR 5 RECOMMENDED LAND PATTERN SIDE VIEW 0.10 0.05 3.15.05 C A B C 3.81 1.27 0.51 5 7 6 8 1.57.05 0.65.05 NOTES: UNLESS OTHERWISE SPECIFIED 0.65.05 2.46.05 1.37.05 0.53.05 0.91.05 0.49.05 0.48.05 4 3 2 1 0.51.05 3.90.05 4.22.05 5.00.05 BOTTOM VIEW A) DOES NOT FULLY CONFORM TO JEDEC REGISTRATION, MO-229, DATED 11/2001. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: 0.10 C 0.08 C 0.80 0.70 0.30 0.20 0.05 0.00 C SEATING PLANE (SCALE: 2X) (c)2013 Fairchild Semiconductor Corporation FDPC8016S Rev.C7 11 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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