To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2013
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDPC8016S Rev.C7
GR GR
PIN1
Top Bottom
Power Clip 5X6
PIN1
V+
LSG
SW
SW
SW
V+
HSG
SW
LSG
SW
SW
SW
V+
V+
HSG
PAD9
GND(LSS)
PAD10
V+(HSD)
FDPC8016S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel
Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Q2: N-Channel
Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A
Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A
Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
RoHS Compliant
General Description
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
Computing
Communications
General Purpose Point of Load
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Symbol Parameter Q1 Q2 Units
VDS Drain to Source Voltage 25Note5 25 V
VGS Gate to Source Voltage ±12 ±12 V
ID
Drain Current -Continuous TC = 25 °C 60 100 A -Continuous TA = 25 °C 20Note1a 35Note1b
-Pulsed TA = 25 °C (Note 4) 75 140
EAS Single Pulse Avalanche Energy (Note 3) 73 216 mJ
PDPower Dissipation for Single Operation TC = 25 °C 21 42 W
Power Dissipation for Single Operation TA = 25 °C 2.1Note1a 2.3 Note1b
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case 6.0 3.0 °C/WRθJA Thermal Resistance, Junction to Ambient 60Note1a 55Note1b
RθJA Thermal Resistance, Junction to Ambient 130Note1c 120Note1d
Pin Name Description Pin Name Description Pin Name Description
1 H S G H i g h S i d e G a t e 3,4,10 V+(HSD) High Side Drain 8 LSG Low Side Gate
2 GR Gate Return 5,6,7 SW Switching Node, Low Side Drain 9 GND(LSS) Low Side Source
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corp oration 2 www.fairchildsemi.com
FDPC8016S Rev.C7
Package Marking and Ordering Information
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characte ri st ic s
Dynamic Characterist ic s
Switching Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
05OD/15OD FDPC8016S Power Clip 56 13 ” 12 mm 3000 units
Symbol Parameter Test Conditions Type Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V Q1
Q2 25
25 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C Q1
Q2 24
28 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V Q1
Q2 1
500 μA
μA
IGSS Gate to Source Leakage Current VGS = 12 V/-8 V, VDS= 0 V
VGS = 12 V/-8 V, VDS= 0 V Q1
Q2
±100
±100 nA
nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA Q1
Q2 0.8
1.1 1.3
1.5 2.5
2.5 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C Q1
Q2 -4
-3 mV/°C
rDS(on) Drain to Source On Resistance
VGS = 10V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A,TJ =125 °C Q1 2.8
3.4
3.9
3.8
4.7
5.3 mΩ
VGS = 10V, ID = 35 A
VGS = 4.5 V, ID = 32 A
VGS = 10 V, ID = 35 A ,TJ =125 °C Q2 1.1
1.3
1.5
1.4
1.7
1.9
gFS Forward Transconductance VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 35 A Q1
Q2 182
241 S
Ciss Input Capacitance Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2 1695
4715 2375
6600 pF
Coss Output Capacitance Q1
Q2 495
1195 710
1675 pF
Crss Reverse Transfer Capacitance Q1
Q2 54
159 100
290 pF
RgGate Resistance Q1
Q2 0.1
0.1 0.4
0.5 1.2
1.5 Ω
td(on) Turn-On Delay Time Q1:
VDD = 13 V, ID = 20 A, RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 35 A, RGEN = 6 Ω
Q1
Q2 8
13 16
24 ns
trRise Time Q1
Q2 2
410
10 ns
td(off) Turn-Off Delay Time Q1
Q2 24
38 38
61 ns
tfFall Time Q1
Q2 2
310
10 ns
QgTotal Gate Charge VGS = 0 V to 10 V Q1
VDD = 13 V, ID
= 20 A
Q2
VDD = 13 V, ID
= 35 A
Q1
Q2 25
67 35
94 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V Q1
Q2 11
31 16
44 nC
Qgs Gate to Source Gate Charge Q1
Q2 3.4
10 nC
Qgd Gate to Drain “Miller” Charge Q1
Q2 2.2
6.3 nC
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corp oration 3 www.fairchildsemi.com
FDPC8016S Rev.C7
Electrical Characteristics TJ = 25 °C unless otherwise noted
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Type Min Typ Max Units
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 20 A (Note 2)
VGS = 0 V, IS = 35 A (Note 2) Q1
Q2 0.8
0.8 1.2
1.2 V
trr Reverse Recovery Time Q1
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 35 A, di/dt = 200 A/μs
Q1
Q2 25
33 40
53 ns
Qrr Reverse Recovery Charge Q1
Q2 10
31 20
50 nC
Notes:
1.RθJA is deter min ed w it h th e d evi ce mounted on a 1 in2 pad 2 oz copp er pa d o n a 1. 5 x 1.5 in. board of FR-4 material . RθJC is gu ar an tee d by design while RθCA is determi ne d by
the user's board design.
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 216 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 39 A.
4. Pulsed Id limited by junction temperature, td<=10 us. Please refer to SOA curve for more details.
5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
d. 120 °C/W when moun ted on a
minimum pad of 2 oz copper
G
DF
DS
SF
SS
G
DF
DS
SF
SS
G
DF
DS
SF
SS
G
DF
DS
SF
SS
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FDPC8016S Rev.C7
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
Figure 1.
0.00.20.40.60.81.0
0
15
30
45
60
75
VGS = 3.5 V
VGS = 3 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 2.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 4.5 V
On Region Characteristics Figure 2.
0 1530456075
0
1
2
3
4
5
VGS = 3 V
PULSE DUR A TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 3.5 V VGS = 4.5 V
VGS = 2.5 V
VGS = 10 V
Normalized On-Resista nce
vs. Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 20 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERA TU R E (oC)
vs. Junction Temperature Figure 4.
12345678910
0
3
6
9
12
TJ = 125 oC
ID = 20 A
TJ = 25 oC
VGS, GA TE TO SOURCE VOLTAGE (V)
rDS(on), DR AIN T O
SOURCE ON-RESISTA NCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs. Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0
0
15
30
45
60
75
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO S OU R CE V OLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs. Source Current
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FDPC8016S Rev.C7
Figure 7.
0 6 12 18 24 30
0
2
4
6
8
10 ID = 20 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHA R GE (nC)
VDD = 13 V
Gate Charge Characteristics Figure 8.
0.1 1 10 25
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (p F )
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs. Dra in
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
10
30
TJ = 100 oC
TJ = 25 oC
TJ = 12 5 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Un cla mpe d Indu ctiv e
Switching Capability Figure 10.
25 50 75 100 125 150
0
10
20
30
40
50
60
70
VGS = 4.5 V
RθJC = 6.0 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Maximum Continuous Drain
Current vs. Case Temperature
Figure 11. Forward Bias Safe
Operating Area
0.1 1 10 80
0.1
1
10
100
500
CURVE BENT TO
MEASURED DATA
10 μs
10 ms
DC
100 μs
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
TH IS AR EA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 6.0 oC/W
TC = 25 oC
Figure 12. Single Pulse Maximum
Power Dissipation
10-5 10-4 10-3 10-2 10-1 1
10
100
1000
5000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE P U LS E
RθJC = 6.0 oC/W
TC = 25 oC
t, PU L S E WIDT H (s e c)
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FDPC8016S Rev.C7
Figure 13. Junction-to-Case Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1
0.005
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
r(t) , NORMALIZED EFF ECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1t2
NOTES:
DUTY FACTOR: D = t
1
/ t
2
T
J
-
T
C
= P
DM
x Z
θ
JC
(t)
Z
θ
JC
(t) = r(t) x R
θ
Jc
R
θ
JC
= 6.0
o
C/W
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corp oration 7 www.fairchildsemi.com
FDPC8016S Rev.C7
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
Figure 14. O n- R egion Characteristics Figur e 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
Figure 16. Normalized On-Resistance
vs. Junction Temper ature Figure 17. On-Resistance vs. Gate to
Source Voltage
Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
0.0 0.2 0.4 0.6 0.8
0
20
40
60
80
100
120
140
VGS = 3.5 V
VGS = 3 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% M A X
VGS = 2.5 V
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRA IN TO SOURCE VOLTAGE (V)
0 20 40 60 80 100 120 140
0.0
1.5
3.0
4.5
6.0
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 3.5 V VGS = 4.5 V
VGS = 2.5 V
VGS = 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 35 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNC TION TEMPER A TU R E (oC)
12345678910
0
1
2
3
4
5
TJ = 125 oC
ID = 35 A
TJ = 25 oC
VGS, GA TE TO SOURCE VOLTAGE (V)
rDS(on), DR AIN T O
SOURCE ON-RESISTA NCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1234
0
20
40
60
80
100
120
140
TJ = 125 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO S OU RC E V OLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corp oration 8 www.fairchildsemi.com
FDPC8016S Rev.C7
Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted
Figure 20. Gate Charge Characteristics Figure 21. Capacitanc e vs. D rain
to Source Voltage
Figure 22. Unc lamped Inductive
Switching Capability Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
Figure 24. Forward Bias Safe
Operating Area Figure 25. Single Pulse Maximum
Power Dissipation
0 20406080
0
2
4
6
8
10
ID = 35 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 13 V
0.1 1 10 25
10
100
1000
10000
f = 1 M H z
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
0.001 0.01 0.1 1 10 100 1000
1
10
50
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
Limited by Package
VGS = 4.5 V
RθJC = 3.0 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
0.1 1 10 80
0.1
1
10
100
1000
10 μs
CURVE BENT TO
MEASURED DATA
100 μs
10 m s
DC
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.0 oC/W
TC = 25 oC
10-5 10-4 10-3 10-2 10-1 1
10
100
1000
10000
P(PK), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJC = 3.0 oC/W
TC = 25 oC
t, PULSE WIDTH (sec)
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
Figure 26. Junction-to-Case Transient Thermal Response Curve
10-5 10-4 10-3 10-2 10-1 1
0.003
0.01
0.1
1
2
SINGLE PULSE
DUTY CYCLE-DESCENDING ORDER
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
t, RECTANGULAR PULSE DURA TION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FAC TOR: D = t
1
/ t
2
T
J
-
T
C
= P
DM
x Z
θ
JC
(t)
Z
θ
JC
(t) = r(t) x R
θ
Jc
R
θ
JC
= 3.0
o
C/W
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FDPC8016S Rev.C7
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FDPC8016S Rev.C7
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8016S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
50 100 150 200 250 300 350 400
-5
0
5
10
15
20
25
30
35
40
di / dt = 200 A/μS
CURRENT (A)
TIME (ns)
0 5 10 15 20 25
10-6
10-5
10-4
10-3
10-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REV E RSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FDPC8016S Rev.C7
Dimensional Outline and Pad Layout
C
L
L
C
PKG
PKG
5.10
4.90
6.10
5.90
C
5.00±.05
3.81
1.57±.05
TOP VIEW
SIDE VIEW
BOTTOM VIEW
58
41
4 3 2 1
567
0.10 C A B
0.05 C
1.37±.05
0.49±.05
NOTES: UNLESS OTHERWISE SPECIFIED
A) DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION, MO-229,
DATED 11/2001.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE
BURRS OR MOLD FLASH. MOLD
FLASH OR BURRS DOES NOT
EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
SEE
DETAIL A
(SCALE: 2X)
0.05
0.00
0.30
0.20
0.08 C
PIN #1
INDICATOR
SEATING
PLANE
0.10 C
0.80
0.70
RECOMMENDED LAND PATTERN
5678
1
2
3
4
1.27
0.65±.05
0.48±.05
A
0.10 C
2X
B
0.10 C
2X
0.51±.05
2.46±.05
8
3.90±.05
0.53±.05
0.91±.05
0.51
6.60
0.75
4.22±.05
3.15±.05
0.00
0.00
1.43
3.30
2.08
2.48
3.30
2.48
1.53
1.01
1.08
1.48
1.53
2.29
0.83
5.00
0.82
1.01
0.40
2.65
1.98
4.56
4.20
1.27
0.65±.05
E) DRAWING FILE NAME:
FDPC8016S PowerTrench® Power Clip
©2013 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FDPC8016S Rev.C7
TRADEMARKS
The following includes re gistered and unregistere d trademarks and service marks, owned by Fairchild S emiconductor and/or its global su bsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCH ILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the bo dy or (b ) support or su stain life,
and (c) whose fail ure to perform when properly used in accordan ce with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR
Marking Small Speaker s Sound L ouder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
Datasheet Identifi cation Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specific ations
may change in any manner without notice.
Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fai rchild
Semiconductor. The datasheet is for refe rence information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support .
Counterfeiting of se miconductor parts is a growing problem in th e industry. All ma nufactures of semiconductor p roducts are exper iencing counterfeiting of their
parts. Customers who inadver tently purcha se counterfeit part s exper ience many problems su ch as loss of brand repu tation , substa ndard perfo rmance, faile d
application, and increased cost of producti on and manuf act uring dela ys. Fairchil d is taking st rong measures to pro tect ourselves and our custo mers from the
proliferation of cou nterfeit parts. Fairchild str ongly encourages cust omers to purchase Fairchild parts either d irectly fr om Fairchild or from Authorized Fairchi ld
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty covera ge or other assistance for parts bought from Unau thorized Sources. Fairchild is
committed to combat this global prob lem and encourage our customers to do their part in stop ping this practice by buying direct or from authorized distribut ors.
Rev. I66
tm
®
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC