MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR12BM OUTLINE DRAWING Dimensions in mm 10.5 MIN 1.5 MAX 1.3 4 3.8 MAX 8.6 TYPE NAME VOLTAGE CLASS 3 1 2 12.5 MIN 1 0.8 0.5 2.5 2.5 1 2 3 4 * IT (AV) ......................................................................... 12A * VDRM ..............................................................400V/600V * IGT ..........................................................................30mA CATHODE ANODE GATE ANODE 4.5 2.6 Measurement point of case temperature 10.5 TO-220C APPLICATION Automatic strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage 400 600 V VD (DC) DC off-state voltage 320 480 V Ratings Unit 18.8 A Commercial frequency, sine half wave, 180 conduction, Tc =91C 12.0 A Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive 360 A I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 544 A2s PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current ITSM for fusing 5 W 0.5 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 10 V IFGM Peak gate forward current 2 Tj Junction temperature Storage temperature Tstg -- Weight Typical value A -40 ~ +125 C -40 ~ +125 C 1.5 g Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, V DRM applied -- -- 2.0 mA IDRM Repetitive peak off-state current Tj=125C, V DRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM =40A -- -- 1.6 V VGT Gate trigger voltage Tj=25C, VD=6V, IT=1A -- -- 1.5 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.2 -- -- V IGT Gate trigger current Tj=25C, VD=6V, IT=1A -- -- 30 mA IH Holding current mA R th (j-c) R th (j-a) Thermal resistance Tj=25C, VD=12V -- 15 -- Junction to case -- -- 1.2 Junction to ambient -- -- 70 C/W MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 400 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE VFGM = 6V 101 7 5 3 2 PGM = 5W PG(AV) = 0.5W VGT = 1.5V 100 7 5 3 2 IFGM = 2A IGT = 30mA 10-1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj=tC) GATE TRIGGER CURRENT (Tj=25C) GATE VOLTAGE (V) 3 2 100 (%) GATE CHARACTERISTICS 103 7 5 3 2 TYPICAL EXAMPLE 102 7 5 3 2 101 7 5 3 2 100 -40 -20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE TRIGGER VOLTAGE (V) 1.6 1.4 ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, 1.2 DISTRIBUTION TYPICAL EXAMPLE 1.0 0.8 0.6 0.4 0.2 0 -40 -20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 JUNCTION TO AMBIENT 7 5 3 2 101 7 5 3 2 100 7 5 3 2 JUNCTION TO CASE 10-1 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 64 56 48 360 120 RESISTIVE, 90 INDUCTIVE 60 LOADS 40 32 CASE TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (C) 180 = 30 24 16 8 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS 360 120 100 80 = 30 60 90 60 180 120 40 20 0 0 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 360 120 180 RESISTIVE, 120 INDUCTIVE LOADS 90 100 80 60 = 30 40 60 20 0 0 AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 64 56 360 100 RESISTIVE LOADS 80 = 30 60 90 180 60 120 40 20 0 0 4 8 12 16 20 24 28 16 0 360 8 0 4 8 12 RESISTIVE LOADS 16 20 24 28 32 140 120 360 80 RESISTIVE LOADS 120 90 60 = 30 40 60 20 0 32 180 100 AVERAGE ON-STATE CURRENT (A) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 64 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 56 140 48 360 CASE TEMPERATURE (C) AVERAGE POWER DISSIPATION (W) = 30 24 ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 AMBIENT TEMPERATURE (C) CASE TEMPERATURE (C) 120 60 32 AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 90 40 AVERAGE ON-STATE CURRENT (A) 140 180 120 48 RESISTIVE, INDUCTIVE LOADS 40 32 24 = 30 180 270 120 DC 90 60 16 8 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) 120 360 100 RESISTIVE, INDUCTIVE LOADS 80 = 30 90 180 60 DC 60 120 270 40 20 0 0 4 8 12 16 20 24 28 32 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE RESISTIVE, INDUCTIVE LOADS 120 DC 270 60 180 = 30 40 60 90 120 20 0 0 200 180 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125C TYPICAL 140 EXAMPLE 120 IGT (25C) # IGT = 10.1mA 100 # 60 40 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 100 (%) AVERAGE ON-STATE CURRENT (A) 80 20 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) Ta = 25C VD = 100V RL = 12 TYPICAL EXAMPLE IGT (25C) # IGT = 11.2mA TURN-ON TIME (s) 8.0 7.0 6.0 5.0 4.0 3.0 # 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA) 100 (%) 10.0 #2 #1 JUNCTION TEMPERATURE (C) REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C) TURN-ON TIME VS. GATE CURRENT TYPICAL EXAMPLE IGT (25C) # 1 10.6mA # 2 11.6mA 100 -40 -20 0 20 40 60 80 100 120 140 160 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 9.0 TYPICAL EXAMPLE 160 360 100 80 100 (%) 140 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE (T j = tC) BREAKOVER VOLTAGE (T j = 25C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 200 TYPICAL EXAMPLE 180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR12BM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (s) DISCHARGING CAPACITOR CM (F) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. DISCHARGE CAPACITOR 800 700 Ta = 25C REPETITIVE CYCLE T > 5s 600 500 400 300 200 CM 350V ITM 100 0 0 400 800 1200 1600 2000 PEAK ON-STATE CURRENT (A) Feb.1999