DATA SHEET NPN SILICON RF TRANSISTOR NE68518 / 2SC5015 JEITA Part No. ED NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES * High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz * Low voltage operation * 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity NE68518-A 2SC5015-A 50 pcs (Non reel) NE68518-T1-A 2SC5015-T1-A 3 kpcs/reel IN U * Low noise and high gain Supplying Form * 8 mm wide embossed taping O NT * Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V IC 30 mA Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C DI SC Parameter Collector Current Total Power Dissipation Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10403EJ01V0DS (1st edition) (Previous No. P10394EJ2V0DS00) Date Published June 2003 CP(K) The mark shows major revised points. NE68518 / 2SC5015 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 5 V, IE = 0 mA - - 0.1 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA - - 0.1 A 75 - 150 - - 12 - GHz 9 11 - dB - 1.5 2.5 dB - 0.3 0.5 pF hFE DC Current Gain Note 1 VCE = 3 V, IC = 10 mA RF Characteristics fT Insertion Power Gain VCE = 3 V, IC = 10 mA, f = 2 GHz S21e VCE = 3 V, IC = 10 mA, f = 2 GHz NF VCE = 3 V, IC = 3 mA, f = 2 GHz 2 Noise Figure Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz IN U Gain Bandwidth Product Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION KB Marking T83 hFE Value 75 to 150 DI SC O NT Rank 2 ED Collector Cut-off Current Data Sheet PU10403EJ01V0DS NE68518 / 2SC5015 TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 150 100 0 25 50 75 100 125 Ambient Temperature TA (C) VCE = 1 V 0.01 0.001 0.5 0.6 0.7 0.8 2 5 10 20 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 2 V 10 1 0.9 1.0 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.9 0.8 1.0 Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 10 Collector Current IC (mA) Collector Current IC (mA) 0.1 1 100 VCE = 3 V 1 0.1 0.01 0.001 0.0001 0.4 0.2 Base to Emitter Voltage VBE (V) DI SC 0.0001 0.4 100 150 Collector Current IC (mA) 10 0.1 0.5 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 1 1 O NT Collector Current IC (mA) 100 f = 1 MHz IN U 50 2 ED Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 0.6 0.7 0.8 25 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 15 10 5 IB = 20 A 0.9 1.0 0 2 4 6 8 Collector to Emitter Voltage VCE (V) Base to Emitter Voltage VBE (V) Data Sheet PU10403EJ01V0DS 3 NE68518 / 2SC5015 DC Current Gain hFE 100 1 10 12 10 8 10 6 4 2 0 1 100 2 INSERTION POWER GAIN, MAG vs. FREQUENCY DI SC 40 12 VCE = 3 V IC = 10 mA Insertion Power Gain |S21e|2 (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Collector Current IC (mA) 50 30 20 MAG 10 |S21e|2 0 0.1 0.2 0.5 1 2 10 5 5 10 20 Data Sheet PU10403EJ01V0DS 50 Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz 8 6 4 2 0 1 2 5 10 20 Collector Current IC (mA) Frequency f (GHz) 4 100 VCE = 3 V f = 2 GHz O NT 1 10 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 14 VCE = 3 V 10 0.1 1 Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT 100 100 10 0.1 100 Collector Current IC (mA) 1 000 VCE = 2 V IN U 10 0.1 DC Current Gain hFE 1 000 VCE = 1 V Gain Bandwidth Product fT (GHz) DC Current Gain hFE 1 000 DC CURRENT GAIN vs. COLLECTOR CURRENT ED DC CURRENT GAIN vs. COLLECTOR CURRENT 50 NE68518 / 2SC5015 NOISE FIGURE vs. COLLECTOR CURRENT VCE = 3 V f = 2 GHz 4 ED 3 2 1 0 1 2 5 10 20 Collector Current IC (mA) 50 IN U Noise Figure NF (dB) 5 Remark The graphs indicate nominal characteristics. DI SC O NT S-PARAMETERS Data Sheet PU10403EJ01V0DS 5 NE68518 / 2SC5015 PACKAGE DIMENSIONS 4-PIN SUPER MINIMOLD (18) (UNIT: mm) 1.30 0.65 IN U 0 to 0.1 0.15+0.1 -0.05 4 0.3+0.1 -0.05 1 O NT PIN CONNECTIONS Collector Emitter Base Emitter DI SC 1. 2. 3. 4. 6 ED 0.65 0.3+0.1 -0.05 3 2 0.65 0.3 0.90.1 0.4+0.1 -0.05 0.60 1.25 1.250.1 T83 2.00.2 0.3+0.1 -0.05 2.10.2 Data Sheet PU10403EJ01V0DS NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. 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