MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-24B * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 1020.5 6 14 6 14 6 17 4-5.5 7-M4 P BwPEwP U V W 30 16.5 10 EuP EvP EwP BvN BwN EvN EwN EuN N N U V W 8.5 17 N BvP BuN 910.5 N 12 BuN EuN BvN EvN BwN EwN 24.5 P 30 740.25 P 43 BvP EvP 27 BuP EuP P BwP BuP 2 20 20 800.25 22 11 Tab#110, t=0.5 LABEL 7 30+1.5 -0.5 29.5 8.1 22 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage Parameter IC=1A, VEB=2V Conditions 1200 V VCEX Collector-emitter voltage VEB=2V 1200 V VCBO Collector-base voltage Emitter open 1200 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 50 A -IC Collector reverse current DC (forward diode current) 50 A PC Collector dissipation TC=25C 400 W IB Base current DC 3 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M4 -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N*m 10~15 kg*cm 1.47~1.96 N*m 15~20 kg*cm 660 g (Tj=25C, unless otherwise noted) Limits Symbol Parameter Test conditions Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1200V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1200V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 50 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=50A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=50A, VCE=4.0V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=50A, IB1=0.1mA, -IB2=1.0A -- -- 15 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.31 C/ W Diode part (per 1/6 module) -- -- 1.2 C/ W Conductive grease applied (per 1/6 module) -- -- 0.2 C/ W IC=50A, IB=67mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 80 IB=400mA DC CURRENT GAIN hFE IB=200mA IB=67mA 60 40 IB=20mA 20 0 IB=10mA 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 7 5 4 3 2 3.2 3.6 4.0 4.8 4.4 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 ton, ts, tf (s) IC=50A 1 Tj=25C Tj=125C VBE(sat) VCE(sat) 10 0 7 5 4 3 IB=67mA 2 Tj=25C 10-1 10 0 Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) 5 3 2 3 4 5 7 10 1 101 7 5 4 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) IC=30A VCE=4V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) VBE (V) 4 VCE=10V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4V Tj=25C 10 -2 2.8 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 0 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 BASE CURRENT IB (A) 3 2 VCC=600V 10 1 IB1=100mA -I B2=1A 7 5 Tj=25C 4 Tj=125C 3 2 10 0 7 5 4 3 ts tf ton 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT 2 3 IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 120 3 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 2 ts 10 1 7 5 4 3 2 tf VCC=600V 10 0 IC=50A 7 IB1=100mA Tj=25C 5 4 Tj=125C 3 10-1 2 3 4 5 7 10 0 100 80 60 40 20 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) Tj=125C IB2=-1A COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 50S 100S DC 10 0 7 5 TC=25C NON-REPETITIVE 3 2 2 3 5 710 0 2 3 5 7 10 1 2 3 5 7 10 2 2 DERATING FACTOR (%) 1mS SECOND BREAKDOWN AREA 90 200S 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2 3 5 7 10 2 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) COLLECTOR CURRENT IC (A) 100 10 2 7 5 3 2 COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) VCE (V) DERATING FACTOR OF F. B. S. O. A. 2 10 1 7 5 3 2 200 400 600 800 1000 1200 1400 0 TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2 10 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0 0.4 0.8 1.2 Tj=25C Tj=125C 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM50TB-24B MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 2 7 5 4 3 2 10 1 Irr 10 1 7 Qrr 5 4 3 trr VCC=600V 2 IB1=100mA -IB2=1A 0 10 10 0 2 3 4 5 7 10 1 10 0 trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) Tj=25C Tj=125C 10 -1 2 3 4 5 7 10 2 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (DIODE) 10 0 2 3 5 7 10 1 2 3 2.0 1.8 Zth (j-c) (C/ W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/