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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N6517 NPN Epitaxial Silicon Transistor Features * * * * High Voltage Transistor Collector Dissipation: PC(max) = 625mW Complement to 2N6520 Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Symbol Ta = 25C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 2N6517 2N6517C 350 400 V V VCEO Collector-Emitter Voltage 2N6517 2N6517C 350 400 V V VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Symbol Ta = 25C unless otherwise noted Parameter Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage 2N6517 IC = 100A, IE = 0 2N6517C IC = 100A, IE = 0 350 400 V V BVCEO Collector-Emitter Breakdown Voltage * 2N6517 IC = 1mA, IB = 0 2N6517C IC = 1mA, IB = 0 350 400 V V BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 ICBO Collector Cut-off Current VCB = 250V, IE = 0 50 nA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 50 nA hFE DC Current Gain * 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517/2N6517C 2N6517C VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 30mA VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA VCE = 10V, IC = 5mA (c) 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 6 20 30 30 20 15 50 V 200 200 200 www.fairchildsemi.com 1 2N6517 -- NPN Epitaxial Silicon Transistor August 2010 Symbol Max. Units VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 20mA, IB = 2mA IC = 30mA, IB = 3mA IC = 50mA, IB = 5mA 0.3 0.35 0.5 1 V V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA IC = 20mA, IB = 2mA IC = 30mA, IB = 3mA 0.75 0.85 0.9 V V V Output Capatitance VCB = 20V, IE = 0, f = 1MHz Current Gain Bandwidth Product * IC = 10mA, VCE = 20V, f = 20MHz Base-Emitter On Voltage IC = 100mA, VCE = 10V Cob fT VBE(on) Parameter Conditions Min. 40 6 pF 200 MHz 2 V * Pulse Test: Pulse Width 300s, Duty Cycle 2% (c) 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 www.fairchildsemi.com 2 2N6517 -- NPN Epitaxial Silicon Transistor Electrical Characteristics (Continued) Ta = 25C unless otherwise noted 1000 100 hFE, DC CURRENT GAIN 100 VCE(sat) [V], SATURATION VOLTAGE VCE = 10V o Ta = 25 C o Ta = 75 C 10 o Ta = 125 C 1 0.1 IC = 10 IB 10 o Ta = 75 C 0.1 o Ta = 25 C 0.01 1 10 100 o Ta = 125 C 1 1000 1 10 100 1000 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 1. DC Current Gain Figure 2. Saturation Voltage 100 VBE(sat) [V], SATURATION VOLTAGE IC = 10 IB o IEBO [nA], Emitter Cut Off Current Ta = 125 C 1 o Ta = 25 C o Ta = 75 C o Ta = 125 C 0.1 1 10 100 10 1 0.1 0.01 o Ta = 25 C 1E-3 1000 o Ta = 75 C 1 IC [mA], COLLECTOR CURRENT Figure 3. Saturation Voltage 4 5 6 1.6 VBE(on) [V], BASE-EMITTER ON VOLTAGE ICBO [nA], Collector CutOff Current 3 Figure 4. Emitter Cut Off Current 10000 1000 o Ta = 125 C 100 10 o Ta = 75 C 1 o Ta = 25 C 0.1 50 100 150 200 250 300 350 VCB [V], COLLECTOR-BASE VOLTAGE VCE = 10V o Ta = 25 C 1.4 1.2 1.0 0.8 0.6 0.4 1 10 100 1000 IC [mA], COLLECTOR CURRENT Figure 5. Collector CutOff Current Figure 6. Base-Emitter On Voltage (c) 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 2 VEB [V], EMITTER-BASE VOLTAGE www.fairchildsemi.com 3 2N6517 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) 50 2.0 f = 1MHz CEB [pF], Emitter-Base Capacitance CCB [pF], Collector-Base Capacitance f = 1MHz 1.8 1.6 1.4 1.2 1.0 0 20 40 60 80 45 40 35 30 25 20 1.0 100 1.5 Figure 7. Output Capacitance 3.0 3.5 4.0 4.5 5.0 1000 td, tr & tON [ns], SWITCHING TIME fT [MHz], Current Gain Bandwidth 2.5 Figure 8. Input Capacitance 100 10 1 2.0 VEB [V], EMITTER-BASE VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE 1 10 tON 100 tr td VCC=100V o IC=5IB1=-5IB2, Ta=25 C 10 10 100 IC [mA], COLLECTOR CURRENT 100 IC [mA], COLLECTOR CURRENT Figure 9. Current Gain Bandwidth Product Figure 10. Resistive Load Switching 10000 tstg, tf & tOFF [ns], SWITCHING TIME tOFF tstg 1000 tf 100 VCC=100V o IC=5IB1=-5IB2, Ta=25 C 10 10 100 IC [mA], COLLECTOR CURRENT Figure 11. Resistive Load Switching (c) 2010 Fairchild Semiconductor Corporation 2N6517 Rev. B1 www.fairchildsemi.com 4 2N6517 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics 2N6517 -- NPN Epitaxial Silicon Transistor Physical Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 14.47 0.40 0.46 0.10 +0.10 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.38 -0.05 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 0.20 (R2.29) Dimensions in Millimeters (c) 2010 Fairchild Semiconductor Corporation 2N6517 Rev. 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