NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0113C DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-powe r. com * www.ssdi-power.c om
SDR958 thru SDR9512
Series
Electrical Characteristics3/ Symbol Typ Max Units
Instantaneous Forward Voltage Drop
(TA = 25ºC, 300 μsec pulse)
IF = 20Adc
IF = 50Adc
IF = 100Adc VF1 1.10
1.25
1.40
--
1.7
2.0 Volts
Instantaneous Forward Voltage Drop
TA = - 55ºC
TA = - 55ºC
TA = 100ºC
TA = 100ºC
IF = 20Adc
IF = 50Adc
IF = 20Adc
IF = 50Adc
VF2
1.20
1.30
0.95
1.15
--
1.80
--
1.60
Volts
Reverse Leakage Current
(Rated VR, TA = 25ºC, 300 μsec pulse minimum) IR1 50 100 μA
Reverse Leakage Current
(Rated VR, TA = 100ºC, 300 μsec pulse minimum)
(Rated VR, TA = 125ºC, 300 μsec pulse minimum)
(Rated VR, TA = 150ºC, 300 μsec pulse minimum)
IR2 3.0
7.0
17.0
10
--
-- mA
Junction Capacitance
(VR = 5 Vdc, TA = 25ºC, f = 1MHz)
(VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ 180
160 --
250 pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 0. 25A)
(IF = 10 A, dIF /dt = 100A/us)
(IF = 10 A, dIF /dt = 100A/us)
(IF = 10 A, dIF /dt = 45A /us )
(IF = 10 A, dIF /dt = 45A /us )
(IF = 10 A, dIF /dt = 45A /us )
(IF = 10 A, dIF /dt = 45A /us )
TA = 25ºC
TA = 25ºC
TA = 25ºC
TA = 25ºC
TA = 25ºC
TA = 100ºC
TA = 100ºC
trr1
trr2
IRM2
trr3
IRM3
trr4
IRM4
100
135
8.0
210
4.0
330
7.5
150
--
--
--
--
--
--
nsec
nsec
A
nsec
A
nsec
A
Case Outline: TO-258 (N) Case Outline: TO-259 (P)
Lead Forming Options:
Suffix DB:
Suffix UB:
Pin1: Cathode
Pin2: Anode
Pin3: Anode
.270
.240
.045
.035
.145
.135
.750
.500
2x Ø.150
.120
.290
.275 2x .265
.245
.135
.120 TYP
.550
.530
2x .265
.245
3x Ø .065
.055
2x .205
.195 .405
.395
1.215
1.175 .960
.935 .700
.680
1.300
1.030
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
PIN 3
2x .270
.240
.190 MIN
.190 MIN
2x .270
.240