60V Complementary PowerTrenchMOSFET Features General Description * This complementary MOSFET device is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Q1: N-Channel 4.5 A, 60 V RDS(on) = 75 m @ VGS = 4.5V * Q2: P-Channel -3.5 A, -60 V RDS(on) = 105 m @ VGS = -10V RDS(on) = 135 m @ VGS = -4.5V Applications * DC/DC converter * Power management * LCD backlight inverter * Qualified to AEC Q101 * RoHS Compliant DD2 D1 D 4 6 3 Q1 G2 S2 G Pin 1 SO-8 G1 S1 S S VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current 2 8 1 TA = 25C unless otherwise noted Parameter Symbol 7 S Absolute Maximum Ratings Q1 - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) Q2 Units 60 -60 20 4.5 20 20 -3.5 -20 V V A 2 1.6 1.2 2 W -55 to +150 C (Note 1a) 78 C/W (Note 1) 40 C/W (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Q2 5 DD2 DD1 SO-8 PD RDS(on) = 55 m @ VGS = 10V Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking FDS4559 Device FDS4559-F085 2008 Semiconductor Components Industries, LLC.December-2017, Rev 1 Reel Size Tape width Quantity 13" 12mm 2500 units Publication Order Number: FDS4559-F085/D FDS4559_F085 60V Complementary PowerTrench (R) MOSFET FDS4559-F085 Symbol TA = 25C unless otherwise noted Test Conditions Parameter Type Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) W DSS IAR Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 30 V, ID = 4.5 A Q1 90 mJ Q1 4.5 A Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 48 V, VGS = 0 V VDS = -48 V, VGS = 0 V VGS = +20 V, VDS = 0 V VGS = +20 V, VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 60 -60 VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 4.5 A VGS = 10 V, ID = 4.5 A, TJ = 125C VGS = 4.5 V, ID = 4 A VGS = -10 V, ID = -3.5 A VGS = -10 V, ID = -3.5 A, TJ = 125C VGS = -4.5 V, ID = -3.1 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 10 V, ID = 4.5 A VDS = -5 V, ID = -3 5 A Q1 Q2 Q1 Q2 Q1 1 -1 Q1 Q2 Q1 Q2 Q1 VDS = 25 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -30 V, VGS = 0 V, f = 1.0 MHz Q1 VDD = 30 V, ID = 1 A, VGS = 10V, RGEN = 6 V 58 -49 mV/C 1 -1 +100 +100 A 3 -3 V nA (Note 2) VGS(th) Gate Threshold Voltage VGS(th) TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance Q2 2.2 -1.6 -5.5 4 42 72 55 82 130 105 mV/C 55 94 75 105 190 135 20 -20 m A 14 9 S Q1 Q2 Q1 Q2 Q1 Q2 650 759 80 90 35 39 pF Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 11 7 8 10 19 19 6 12 12.5 15 2.4 2.5 2.6 3.0 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge pF pF (Note 2) Q2 VDD = -30 V, ID = -1 A, VGS = -10 V, RGEN = 6 Q1 VDS = 30 V, ID = 4.5 A, VGS = 10 V Q2 VDS = -30 V, ID = -3.5 A, VGS = -10V www.onsemi.com 2 20 14 18 20 35 34 15 22 18 21 ns ns ns ns nC nC nC FDS4559_F085 60V Complementary PowerTrench (R) MOSFET Electrical Characteristics Symbol Parameter (continued) TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) VGS = 0 V, IS = -1.3 A (Note 2) Voltage Q1 Q2 Q1 Q2 0.8 -0.8 1.3 -1.3 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125C/W when mounted on a .02 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% www.onsemi.com 3 c) 135C/W when mounted on a minimum pad. FDS4559_F085 60V Complementary PowerTrench (R) MOSFET Electrical Characteristics 1.8 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 -4.5V -4.0V -5.0V -3.5V 9 6 -3.0V 3 -2.5V VGS = -3.5V 1.6 -4.0V 1.4 -4.5V -5.0V 1.2 -6.0V 0 -10V 1 2 3 4 0 5 2 4 6 8 10 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 0.4 ID = -3.5A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -8.0V 1 0.8 0 1.6 1.4 1.2 1 0.8 0.6 0.4 ID = -1.5A 0.3 TA = 125oC 0.2 0.1 TA = 25oC 0 -50 -25 0 25 50 75 100 125 150 175 2 4 o TJ, JUNCTION TEMPERATURE ( C) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55oC VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 15 -ID, DRAIN CURRENT (A) -7.0V 25oC 12 125oC 9 6 3 0 VGS = 0V 10 TA = 125oC 25oC 1 -55oC 0.1 0.01 0.001 1 2 3 4 0 5 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDS4559_F085 60V Complementary PowerTrench (R) MOSFET Typical Characteristics: Q2 1200 VDS = 10V ID = -3.0A 20V f = 1 MHz V GS = 0 V 1000 8 30V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 800 C ISS 600 400 2 200 C OSS C RSS 0 0 0 4 12 8 16 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 40 50 60 Figure 8. Capacitance Characteristics. 40 P(pk), PEAK TRANSIENT POWER (W) 100 100s ID, DRAIN CURRENT (A) 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 10 10ms 100ms 1 1s 10s VGS = -10V SINGLE PULSE RJA = 135oC/W 0.1 DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RJA = 135C/W TA = 25C 30 20 10 0 0.01 0.1 1 10 100 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. www.onsemi.com 5 1000 FDS4559_F085 60V Complementary PowerTrench (R) MOSFET Typical Characteristics: Q2 1.8 VGS = 10V 6.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 20 4.5V 5.0V 4.0V 12 8 3.5V 4 1.6 VGS = 4.0V 1.4 4.5V 5.0V 1.2 6.0V 8.0V 0.8 0 0 1 2 0 4 3 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 2.2 ID = 2.3A ID = 4.5A VGS = 10V 2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 0.12 0.1 TA = 125oC 0.08 0.06 0.04 TA = 25oC 0.02 0 175 2 4 6 8 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 20 ID, DRAIN CURRENT (A) 25oC IS, REVERSE DRAIN CURRENT (A) TA = -55oC VDS = 5V o 16 125 C 12 8 4 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1 2 3 4 5 0 6 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 0.2 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 6 FDS4559_F085 60V Complementary PowerTrench (R) MOSFET Typical Characteristics: Q1 ID = 4.5A 900 VDS = 10V 8 30V f = 1MHz VGS = 0 V 800 20V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 700 CISS 600 500 400 300 200 COSS 100 0 CRSS 0 0 2 4 8 6 10 12 14 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 100 40 SINGLE PULSE RJA = 135oC/W RDS(ON) LIMIT 100s 10 TA = 25oC 30 1m POWER (W) ID, DRAIN CURRENT (A) 60 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms 100ms 1 1s DC VGS= 10V SINGLE PULSE RJA= 135oC/W 0.1 20 10 TA= 25oC 0.01 0.1 1 10 0 0.01 100 0.1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 20. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 135C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 7 100 1000 FDS4559_F085 60V Complementary PowerTrench (R) MOSFET Typical Characteristics: Q1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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