2008 Semiconductor Components Industries,
LLC.December-2017, Rev 1
FDS4559-F085
60V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
ON Semiconductor’s advanced PowerTrench
process that has been especially tailored to
minimize the on-state resistance and yet
maintain low gate charge for superior switching
performance.
Applications
•DC/DC convert er
•Power managem ent
•LCD backli ght inverter
Features
•Q1: N-Channel
4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10V
RDS(on) = 75 mΩ @ VGS = 4.5V
•Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 mΩ @ VGS = –10V
R
DS(on) = 135 mΩ@ VGS = –4.5V
S
D
S
S
SO-8
D
D
D
G
D1 D1 D2 D2
S1G1S2G2
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units
VDSS Drain-Source
Voltage 60 –60 V
VGSS Gate-Source
Voltage ±20 ±20 V
ID Drain Current - Continuous (Note 1a) 4.5 –3.5 A
- Pulsed 20 –20
PD Power Dissipation for Dual Operati on 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1.2
(Note 1c) 2
TJ, TSTG Operating and St orage J unction Tem perature Range -55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junct i on-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marki ng Device Reel Siz e Tape width Quantity
units
FDS4559_F085 60V Complementary PowerTrench MOSFET
FDS4559 13” 12mm 2500
Publication Order Number:
FDS4559-F085/D
FDS4559-F085
®
Qualified to AEC Q101
RoHS Compliant
•
•
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS Single Pulse Drain-Source
Avalanche E nergy VDD = 30 V, ID = 4.5 A Q1 90 mJ
IAR Maximum Drain-Source
Avalanche Current Q1 4.5 A
Off Characteristics
BVDSS Drain-Sourc e Breakdown
Voltage VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA Q1
Q2 60
–60 V
∆BVDSS
∆TJ Breakdown Voltage
Temperature Coefficient ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C Q1
Q2 58
–49 mV/°C
IDSS Zero Gate Volt age Drain
Current VDS = 48 V, VGS = 0 V
VDS = –48 V, VGS = 0 V Q1
Q2 1
–1 µA
IGSS Gate-Body Leakage VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V Q1
Q2 +
100
+100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold V ol t age VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA Q1
Q2 1
–1 2.2
–1.6 3
–3 V
∆VGS(th)
∆TJ Gate Threshold Vol tage
Temperature Coefficient ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C Q1
Q2 –5.5
4mV/°C
Q1 42
72
55
55
94
75
RDS(on) Static Drain-S ource
On-Resistance VGS = 10 V, ID = 4.5 A
VGS = 10 V, ID = 4.5 A, TJ = 125°C
VGS = 4.5 V, ID = 4 A
VGS = –10 V, ID = –3.5 A
VGS = –10 V, ID = –3.5 A , T J = 125°C
VGS = –4.5 V, ID = –3. 1 A
Q2 82
130
105
105
190
135
mΩ
ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V Q1
Q2 20
–20 A
gFS Forward
Transconductance VDS = 10 V, I D = 4. 5 A
VDS = –5 V, ID = –3 5 A Q1
Q2 14
9 S
Dynamic Characteristics
Ciss Input Capacitance Q1
Q2 650
759 pF
Coss Output Capacitance Q1
Q2 80
90 pF
Crss Reverse
Transfer
Capacitance
Q1
VDS = 25 V, VGS = 0 V ,
f = 1.0 MHz
Q2
VDS = –30 V, VGS = 0 V,
f = 1.0 MHz Q1
Q2 35
39 pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time Q1
Q2 11
7 20
14 ns
trTurn-On Rise Time Q1
Q2 8
10 18
20 ns
td(off) Turn-Off Delay Time Q1
Q2 19
19 35
34 ns
tf Turn-Off Fall Time
Q1
VDD = 30 V, ID = 1 A,
VGS = 10V, RGEN = 6 Ω
Q2
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω Q1
Q2 6
12 15
22 ns
Qg Total Gate Charge Q1
Q2 12.5
15 18
21 nC
Qgs Gate-Source Charge Q1
Q2 2.4
2.5 nC
Qgd Gate-Drain Charge
Q1
VDS = 30 V, ID = 4. 5 A , VGS = 10 V
Q2
VDS = –30 V, ID = –3. 5 A , VGS = –10V Q1
Q2 2.6
3.0 nC
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FDS4559_F085 60V Complementary PowerTrench MOSFET ®
Electrical Characteristics (continued) TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Cont i nuous Drain-Source Di ode Forward Current Q1
Q2 1.3
–1.3 A
VSD Drain-Source Diode Forward
Voltage VGS = 0 V, I S = 1.3 A (Note 2)
VGS = 0 V, IS = –1.3 A (Note 2) Q1
Q2 0.8
–0.8 1.2
–1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycl e < 2.0%
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3
FDS4559_F085 60V Complementary PowerTrench MOSFET ®
Typical Characteristics: Q2
0
3
6
9
12
15
012345
-VDS, DRAIN-SOUR CE V O LTAGE (V)
-I
D
, DRAIN CURRENT (A)
-6.0V
-5.0V
-4.5V
-3.5V
VGS = -10V
-4.0V
-2.5V
-3.0V
0.8
1
1.2
1.4
1.6
1.8
0246810
-ID, DRAIN CURRE NT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
-5.0V
-6.0V -7.0V -8.0V -10V
-4.5V
-4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TE MP E RATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -3.5A
VGS = -10V
0
0.1
0.2
0.3
0.4
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -1.5A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
3
6
9
12
15
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = -5V
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIO DE FO RWARD VOL TAG E (V )
-I
S
, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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4
FDS4559_F085 60V Complementary PowerTrench MOSFET ®
Typical Characteristics: Q2
0
2
4
6
8
10
048
1216
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -3.0A VDS = 10V 20V
30V
0
200
400
600
800
1000
1200
0 102030405060
-VDS, DRAIN TO S OURCE VO LTAG E (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 M H z
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
DC10s1s
100ms
100µs
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
10ms
0
10
20
30
40
0.01 0.1 1 10 100 1000
t1, TIME (s e c )
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
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FDS4559_F085 60V Complementary PowerTrench MOSFET ®
Typical Characteristics: Q1
0
4
8
12
16
20
01234
VDS, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
VGS = 10V
6.0V
5.0V
4.5V
4.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
0 4 8 12 16 20
ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.0V
10V
5.0V
4.5V
6.0V 8.0V
Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 4.5A
VGS = 10V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
246810
VGS, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = 2.3A
TA = 125oC
TA = 25oC
Figure 13. On-Resistance Variation with
Temperature. Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
0
4
8
12
16
20
123456
VGS, GAT E TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
I
S
, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
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FDS4559_F085 60V Complementary PowerTrench MOSFET ®
Typical Characteristics: Q1
0
2
4
6
8
10
02468101214
Qg, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
ID = 4.5A VDS = 10V
20V
30V
0
100
200
300
400
500
600
700
800
900
0 1
02030405060
VDS, DRAIN TO SOURCE VOL TAG E (V)
CAPACITANCE (pF)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
VDS, DRAIN-SOUR CE V O LTAGE (V)
I
D
, DRAIN CURRENT (A)
DC 1s
100ms10ms 1m
100µs
VGS= 10V
SINGLE PULSE
RθJA= 135oC/W
TA= 25oC
RDS(ON) LIMIT
0
10
20
30
40
0.01 0.1 1 10 100 1000
SINGLE PULSE TIME (SEC)
POWER (W)
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 135°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
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FDS4559_F085 60V Complementary PowerTrench MOSFET ®
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