MBRS10H100CT thru MBRS10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA 2 TO-263AB(D PAK) CaseTO-263AB(D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Base P/N with prefix "H" on packing code - AEC-Q101 qualified TerminalMatte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test PolarityAs marked Weight1.4 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25 unless otherwise noted) PARAMETER SYMBOL MBRS MBRS MBRS 10H100CT 10H150CT 10H200CT Unit Maximum repetitive peak reverse voltage VRRM 100 150 200 V Maximum RMS voltage VRMS 70 105 140 V Maximum DC blocking voltage VDC 100 150 200 V Maximum average forward rectified current IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak Repetitive Reverse Surge Current (Note 1) IRRM Maximum Instantaneous Forward Voltage (Note 2) IF= 5 A, TJ=25 IF= 5 A, TJ=125 IF= 10 A, TJ=25 IF= 10 A, TJ=125 VF TJ=25 TJ=125 IR Maximum reverse current @ rated VR Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range dV/dt 1 0.5 0.85 0.88 0.75 0.75 0.95 0.97 0.85 0.85 A V 5 uA 1 mA 10000 V/us O RJC 3.5 TJ - 55 to + 175 O C - 55 to + 175 O C TSTG C/W Note 1 tp = 2.0 s, 1.0KHz Note 2Pulse test with PW=300u sec, 1% duty cycle Document NumberDS_D1309058 Version:H13 MBRS10H100CT thru MBRS10H200CT Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED MBRS10HxxxCT (Note 1) PACKAGE PACKING D2PAK 800 / 13" Paper reel CODE RN Prefix "H" Suffix "G" C0 2 50 / Tube D PAK Note 1: "xx" defines voltage from 100V (MBRS10H100CT) to 200V (MBRS10H200CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBRS10H100CT RN MBRS10H100CT RN MBRS10H100CT RNG MBRS10H100CT RN MBRS10H100CTHRN QUALIFIED PACKING CODE H MBRS10H100CT GREEN COMPOUND CODE G DESCRIPTION Green compound RN AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AVERAGE FORWARD A CURRENT (A) 12 10 8 6 4 RESISTIVE OR INDUCTIVELOAD 2 0 50 60 70 80 90 100 110 120 130 140 150 160 170 180 CASE TEMPERATURE PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 180 8.3mS Single Half Sine Wave JEDEC Method 150 120 90 60 30 0 1 100 NUMBER OF CYCLES AT 60 Hz FIG. 3 TYPICAL FORWARD CHARACTERISTICS FIG. 4 TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE A CURRENT (mA) 100 INSTANTANEOUS FORWARD A CURRENT (A) 10 (oC) TJ=125 10 TJ=25 1 PULSE WIDTH=300uS 1% DUTY CYCLE TJ=125 1 0.1 TJ=75 0.01 0.001 TJ=25 0.0001 0.1 0.6 0.7 0.8 0.9 1 FORWARD VOLTAGE (V) Document NumberDS_D1309058 1.1 1.2 1.3 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version:H13 MBRS10H100CT thru MBRS10H200CT Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 900 800 TRANSIENT THERMAL IMPEDANCE(/W) JUNCTION CAPACITANCE (pF) A 1000 700 600 500 400 300 200 10 1 0.1 100 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit(mm) Unit(inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol A B C D E F G Unit(mm) 10.8 8.3 1.1 3.5 16.9 9.5 2.5 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document NumberDS_D1309058 Version:H13