ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92544m-AAS/A1
OPTION G
7.62
0.26
0.5
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
0.26
7.62
6.62
0.5
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
3 4
6
2 5
APPROVALS
lUL recognised, File No. E91231
DESCRIPTION
The MCT27_ series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photo transistor in a
standard 6 pin dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lDC motor controllers
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
MCT270, MCT271, MCT272, MCT273,
MCT274, MCT275, MCT276, MCT277
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
(MCT275 only) BVCEO 80V
Collector-base Voltage BVCBO 70V
Emitter-base Voltage BVEBO 5V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
10.46
9.86
0.6
0.1 1.25
0.75
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.2 1.5 VIF = 20mA
Reverse Voltage (VR)3VIR = 10µA
Reverse Current (IR)10µAVR = 3V
Output Collector-emitter Breakdown (BVCEO)
MCT27x (except MCT275) 30VIC = 1mA
MCT275 ( note 2 ) 80 V
Collector-base Breakdown (BVCBO)70VIC = 100µA
Emitter-base Breakdown (BVEBO)5VIE = 100µA
Collector-emitter Dark Current (ICEO)50nA VCE = 10V
Coupled Current Transfer Ratio (CTR)
MCT270 50 %10mA IF , 10V VCE
MCT271 45 90 %
MCT272 75 150 %
MCT273 125 250 %
MCT274 225 400 %
MCT275 70 210 %
MCT276 15 60 %
MCT277 100 %
Collector-emitter Saturation VoltageVCE(SAT) 0.4 V16mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Switching Time tON , tOFF
MCT270,272 10µsVCC = 5V , RL = 100Ω,
MCT271 7µsIC= 2mA, (fig 1)
MCT273 20 µs
MCT274 25 µs
MCT275,277 15 µs
MCT276 3.5 µs
7/12/00
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Output
Output
RL = 100Ω
Input
10%
90% 90%
10%
ton
tr
FIG 1
VCC
toff
tf
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB92544m-AAS/A2
DB92544m-AAS/A2
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation P C (mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
100
Forward current I F (mA)
70
80
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Collector-emitter saturation voltage V CE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
IF = 16mA
IC = 2mA
Ambient temperature TA ( °C )
Collector Power Dissipation vs. Ambient Temperature
Ambient temperature TA ( °C )
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
VCE = 10V
TA = 25°C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current IF (mA)
Collector Current vs. Collector-emitter Voltage
(Normalised to MCT270,273,275,277)
7/12/00
Collector-emitter voltage VCE ( V )
Collector current I C (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
IF = 5mA
10
15
20
30
50
