CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
15W L-Band Driver
GaN HEMT on Sic in SMD leadless package
Description
The CHZ015A-QEG is an input matched
packaged Gallium Nitride High Electron
Mobility Transistor.
It allows broadband solutions for a variety of
RF power applications in L-band. The circuit
is well suited for pulsed radar application.
The CHZ015A-QEG is proposed on a 0.5µm
gate length GaN HEMT process. It is based
on Quasi MMIC technology.
It is supplied in RoHS compliant SMD
package.
Main Features
■ Wide band capability: 1.2 - 1.4GHz
■ Pulsed operating mode
■ High power: > 15W
■ High PAE: up to 55%
■ DC bias: VDS=45V @ I D_Q=100mA
■ Low cost package: 24L-QFN4x5
■ MTTF > 106 hours @ Tj=200°C
Main Electrical Characteristics
Tamb.= +25°C, pulsed mode
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
1.2
1.4
GHz
GSS
Small Signal Gain
18
19.5
dB
POUT
Output Power
39.5
41.5
43
dBm
PAE
Max Power Added Efficiency
45
55
%
IdSAT
Saturated Drain Current
650
mA
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Recommended DC Operating Ratings
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
VDS
Drain to Source Voltage
20
45
50
V
VGS_Q
Gate to Source Voltage
-1.9
V
VDS=45V, ID_Q=100mA
ID_Q
Quiescent Drain Current
100
350
mA
VDS=45V
ID_MAX
Drain Current
650
(1)
mA
VDS=45V,
Compressed mode
IG_MAX
Gate Current (forward mode)
0
8
mA
Compressed mode
PW
Pulse width
1.5
ms
DC
Duty cycle
10
%
Tj_MAX
Junction temperature
200
°C
(1) Limited by dissipated power.
DC Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
VP
Pinch-Off Voltage
-3
-2
-1
V
VDS=45V, ID=IDSS/100
ID_SAT
(2)
Saturated Drain Current
2.7
A
VDS=7V, VG=2V (1)
IG_leak
Gate Leakage Current
(reverse mode)
-1
mA
VD=45V, VG=-7V (1)
VBDS
Drain-Source
Break-down Voltage
200
V
VG=-7V (1)
RTH
Thermal Resistance
5.5
°C/W
1ms – 10%
(1) Parameters extrapolated from unit cell measurement.
(2) For information, limited by ID_MAX , see on Absolute Maximum Ratings.
15W L-Band Driver
CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
3/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
RF Characteristics (1)
Tamb.= +25°C, pulsed mode (2), on board 61501358(1), VDS=45V, ID_Q=100mA
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
1.2
1.4
GHz
GSS
Small Signal Gain
18
19.5
dB
dGSS
Small Signal Gain flatness
+/-0.3
dB
PSAT
Saturated Output Power
39.5
41.5
43
dBm
PAE
Power Added Efficiency
45
55
%
IDSAT
Saturated Drain Current
650
mA
Rlin
Input Return Loss
-12
-10
dB
(1) Measured on evaluation board 61501358 on the connector access planes.
(2) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between RF and DC pulse.
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
4/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Absolute Maximum Ratings
Tamb.= +25°C (1), (2), (3)
Symbol
Parameter
Rating
Unit
Note
VDS
Drain-Source Voltage
-0.5, +60
V
VGS_Q
Gate-Source Voltage
-10, +2
V
(4), (6)
IG_MAX
Maximum Gate Current in forward mode
25
mA
IG_MIN
Maximum Gate Current in reverse mode
-4
mA
ID_MAX
Maximum Drain Current
2
A
(4)
PIN
Maximum Input Power
32
dBm
(5)
PW_MAX
Pulse width
3
ms
DC_MAX
Duty cycle
20
%
Top
Operating temperature range
-40 to +85
°C
Tj
Junction Temperature
220
°C
TSTG
Storage Temperature
-55 to +150
°C
(1) Operation by this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) The given values have not to be exceeded at the same time even momentarily for any
parameter, since each parameter is independent from each other, otherwise deterioration or
destruction of the device may take place.
(4) Max junction temperature has to be considered.
(5) Linked to and limited by IG_MAX & IG_MIN values.
(6) VGS_Q max limited by ID_MAX and IG_MAX values.
Simulated Source and Load Impedance
VDS = 45V, ID_Q = 100mA
Frequency (GHz)
Source
Load
Typical [1.2-1.4]
50 - j0
54.0 + j29.6
These values are defined at the package interface with PCB.
Zload
Zsource
15W L-Band Driver
CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
5/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Typical Package Sij parameters (simulation)
Tamb.= +25°C, CW mode, VDS=45V, ID_Q=100mA
Freq
(GHz)
S11
(dB)
PhS11
(°)
S12
(dB)
PhS12
(°)
S21
(dB)
PhS21
(°)
S22
(dB)
PhS22
(°)
0.1
-0.04
-7.9
-60.47
103.6
9.48
-166.5
-5.44
-20.3
0.2
-0.09
-16.0
-53.53
85.8
10.39
175.2
-5.98
-24.1
0.3
-0.18
-24.6
-49.33
73.7
11.07
162.7
-5.87
-30.2
0.4
-0.32
-34.3
-46.02
62.1
11.89
150.8
-5.54
-37.3
0.5
-0.55
-45.4
-43.13
49.7
12.84
138.1
-5.05
-45.1
0.6
-0.95
-58.6
-40.54
35.9
13.87
123.9
-4.56
-55.3
0.7
-1.65
-75.1
-38.09
20.3
14.98
108.0
-4.58
-63.1
0.8
-2.86
-95.8
-35.88
2.2
16.04
89.6
-4.22
-69.9
0.9
-4.89
-122.7
-34.01
-18.2
16.90
68.8
-3.87
-77.5
1.0
-7.93
-159.0
-32.58
-40.3
17.43
46.3
-3.63
-85.0
1.1
-11.14
150.1
-31.59
-63.0
17.60
23.4
-3.47
-91.8
1.2
-12.04
92.7
-30.92
-85.3
17.53
0.7
-3.31
-97.8
1.3
-11.73
49.2
-30.40
-107.3
17.37
-21.6
-3.09
-103.7
1.4
-12.88
16.9
-29.97
-130.0
17.17
-44.7
-2.86
-110.1
1.5
-18.12
-9.9
-29.71
-154.4
16.86
-69.4
-2.81
-117.3
1.6
-27.14
129.5
-29.80
179.7
16.22
-95.7
-3.09
-124.1
1.7
-12.71
113.3
-30.37
153.4
15.15
-122.3
-3.62
-128.1
1.8
-8.17
93.3
-31.25
128.0
13.80
-148.0
-3.94
-128.7
1.9
-6.07
77.4
-32.19
102.7
12.41
-173.7
-3.63
-128.3
2.0
-5.06
66.4
-33.21
74.7
10.98
158.0
-2.80
-131.5
2.1
-4.28
60.6
-34.91
41.9
8.87
124.8
-2.22
-140.8
2.2
-3.14
55.2
-38.21
8.4
5.20
91.0
-2.78
-151.7
2.3
-2.20
47.6
-42.76
-17.7
0.29
64.6
-4.06
-156.8
2.4
-1.65
39.9
-47.60
-35.4
-4.89
46.5
-5.11
-156.4
2.5
-1.32
33.3
-52.31
-47.3
-9.91
34.2
-5.68
-153.9
2.6
-1.11
27.7
-56.83
-55.3
-14.75
25.9
-5.87
-151.4
2.7
-0.96
22.7
-61.24
-60.4
-19.45
20.5
-5.85
-149.6
2.8
-0.84
18.3
-65.64
-62.7
-24.12
17.8
-5.72
-148.5
2.9
-0.75
14.4
-70.11
-61.8
-28.86
18.4
-5.54
-148.0
3.0
-0.68
10.8
-74.72
-55.7
-33.73
24.1
-5.34
-148.0
3.1
-0.62
7.5
-79.12
-40.7
-38.37
38.7
-5.14
-148.3
3.2
-0.57
4.4
-82.10
-16.7
-41.58
62.4
-4.94
-148.9
3.3
-0.53
1.5
-82.89
6.3
-42.59
85.0
-4.75
-149.6
3.4
-0.49
-1.3
-82.61
20.6
-42.52
99.0
-4.56
-150.5
3.5
-0.46
-3.9
-82.26
27.9
-42.38
105.9
-4.39
-151.5
3.6
-0.43
-6.4
-82.13
31.5
-42.45
109.1
-4.22
-152.5
3.7
-0.40
-8.8
-82.20
32.9
-42.71
110.2
-4.06
-153.6
3.8
-0.38
-11.1
-82.44
33.2
-43.13
110.1
-3.92
-154.8
3.9
-0.36
-13.4
-82.81
32.8
-43.67
109.3
-3.78
-156.0
4.0
-0.34
-15.5
-83.27
32.1
-44.29
108.2
-3.65
-157.2
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
6/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Typical Performance on Evaluation Board (ref 61501358)
Calibration and measurements are done on the connector access planes of the evaluation
boards.
Tamb.= +25°C, pulsed mode (1), VDS=45V, ID_Q=100mA
Pout, PAE, Gain & Id @ 1.3GHz
Pout, PAE & Gain @ Pin=28dBm
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
15W L-Band Driver
CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
7/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Typical Performance on Evaluation Board (ref 61501358)
Calibration and measurements are done on the connector access planes of the evaluation
boards.
Tamb.= +25°C, pulsed mode (1), VDS=45V, ID_Q=100mA
S parameters versus frequency
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
8/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Typical Performance in Temperature (on evaluation board)
Calibration and measurements are done on the connector access planes of the evaluation
boards (ref 61501358).
Tamb.= -40°C, +25°C, +85°C, pulsed mode (1), VDS=45V, Vgs fixed (ID_Q=100mA @ +25°C)
Pout, PAE, Gain & Id @ 1.3GHz & -40°C
Pout, PAE, Gain & Id @ 1.3GHz & +85°C
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
15W L-Band Driver
CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
9/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Typical Performance in Temperature (on evaluation board)
Calibration and measurements are done on the connector access planes of the evaluation
boards (ref 61501358).
Tamb.= -40°C, +25°C, +85°C, pulsed mode (1), VDS=45V, ID_Q=100mA (fixed @ +25°C)
Linear Gain versus temperature with ID_Q fixed @ +25°C (100mA)
Input Return Loss versus temperature with ID_Q fixed @ +25°C (100mA)
(1) Input RF and gate voltage are pulsed. Conditions are 25µs width, 10% duty cycle and 1µs
offset between DC and RF pulse.
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
10/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Demonstration Amplifier Low Frequency Equivalent Schematic
(ref 61501358)
Demonstration Amplifier (ref 61501358) / Bill of Materials
Designator
Type
Value - Description
Qty
L1
Inductor for output
pre-matching
3.6nH, +/- 5%, 0603
1
L2
Inductor
22nH, +/- 5.2%, 0908
1
C1
Capacitor
10pF, +/- 5%, 0603
2
C2
Capacitor
120pF, +/- 5%, 0805
1
C3
Capacitor
220pF, +/- 5%, 0805
1
C4
Capacitor
1nF, +/- 5%, 0805
2
C5
Capacitor
1µF, +/- 10%, 1210
1
C6
Capacitor
68µF, +/- 20%, H13
1
R1
Jumper
Jumper 0 Ω, 0603
1
R2
Resistor
3Ω, +/- 1%, 0603
1
J1
Connector
SMD 3 contacts
1
J2
Connector
SMD 5 contacts
1
J3
Connector
SMA
2
Q1
Driver
CHZ015A-QEG
1
-
PCB
RO4003, Er=3.55, h=508µm
-
15W L-Band Driver
CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
11/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Amplifier Demonstration Board (ref 61501358)
OUT
IN
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
12/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Amplifier Demonstration Board (ref 61501358)
15W L-Band Driver
CHZ015A-QEG
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
13/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Package outline (1)
Matt tin, Lead Free
(Green)
1-
Nc
9-
OUT
17-
Nc
Units :
mm
2-
DC
10-
Nc
18-
GND (2)
From the standard :
JEDEC MO-220
3-
Nc
11-
OUT
19-
Nc
(VGHD)
4-
Nc
12-
Nc
20-
Nc
25-
GND
5-
GND (2)
13-
Nc
21-
GND (2)
6-
GND (2)
14-
GND (2)
22-
IN
7-
Nc
15-
Nc
23-
GND (2)
8-
Nc
16-
Nc
24-
Nc
(1) The package outline drawing included in this data-sheet is given for indication. Refer to the
application note AN0017 (http://www.ums-gaas.com) for exact package dimensions.
(2) It is strongly recommended to ground all pins marked “Gnd” through the PCB board.
Ensure that the PCB board is designed to provide the best possible ground to the package.
(3) The temperature is monitored at the package back-side interface (Tcase) as shown above.
Tcase (3) (°C)
CHZ015A-QEG
15W L-Band Driver
Ref. : DSCHZ015A-QEG3354 - 20 Dec 13
14/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Recommended package footprint
Refer to the application note AN0017 available at http://www.ums-gaas.com for package foot
print recommendations.
SMD mounting procedure
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Recommended environmental management
UMS products are compliant with the regulation in particular with the directives RoHS
N°2011/65 and REACh N°1907/2006. More environmental data are available in the
application note AN0019 also available at http://www.ums-gaas.com.
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS package products.
Ordering Information
QFN 4x5 package:
CHZ015A-QEG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.