MBR1545CTG - ON Semiconductor L.L.C.

May, 2008 − Rev. 8

1Publication Order Number:

MBR1535CT/D

MBR1535CT, MBR1545CT

SWITCHMODE]

Power Rectifier

Features and Benefits

•Center−Tap Configuration

•Low Forward Voltage

•Low Power Loss / High Efficiency

•High Surge Capacity

•175°C Operating Junction Temperature

•15 A Total (7.5 A Per Diode Leg)

•Pb−Free Package is Available*

Applications

•Power Supply − Output Rectification

•Power Management

•Instrumentation

Mechanical Characteristics

•Case: Epoxy, Molded

•Epoxy Meets UL 94, V−0 @ 0.125 in

•Weight: 1.9 Grams (Approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•ESD Rating: Human Body Model = 3B

Machine Model = C

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

PLASTIC

SCHOTTKY BARRIER

RECTIFIERS

15 AMPERES

35 and 45 VOLTS

2, 4

MARKING

DIAGRAM

A = Assembly Location

Y = Year

WW = Work Week

x = 3 or 4

G = Pb−Free Package

AKA = Diode Polarity

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

AYWW

MBR15x5CTG

AKA

MBR1535CT, MBR1545CT

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MBR1535CT

MBR1545CT

VRRM

VRWM

VR35

Average Rectified Forward Current

(TC = 163°C) Per Diode

Per Device

IF(AV)

7.5

Peak Repetitive Forward Current

(Square Wave, 20 kHz, TC = 161°C) Per Diode

IFRM 15 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM 150 A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A

Storage Temperature Range Tstg −65 to +175 °C

Operating Junction Temperature (Note 1) TJ−65 to +175 °C

Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS PER DIODE

Characteristic Symbol Value Unit

Maximum Thermal Resistance, Junction−to−Case (Min. Pad) RqJC 3.0 °C/W

Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad) RqJA 60 °C/W

ELECTRICAL CHARACTERISTICS PER DIODE

Characteristic Symbol Min Typ Max Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 7.5 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 125°C)

(iF = 15 Amps, TJ = 25°C)

−

0.47

0.63

0.66

0.57

0.72

0.84

Maximum Instantaneous Reverse Current (Note 2)

(Rated DC Voltage, TJ = 125°C)

(Rated DC Voltage, TJ = 25°C)

−

0.025

0.1

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%

ORDERING INFORMATION

Device Package Shipping†

MBR1535CT TO−220 50 Units / Rail

MBR1535CTG TO−220

(Pb−Free)

50 Units / Rail

MBR1545CT TO−220 50 Units / Rail

MBR1545CTG TO−220

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MBR1535CT, MBR1545CT

http://onsemi.com

I , AVERAGE FORWARD CURRENT (AMPS)

F (AV)

TA, AMBIENT TEMPERATURE (°C)

05025 75

2.0

4.0

6.0

8.0

TC, CASE TEMPERATURE (C°)

135

4.0

SQUARE WAVE

145 155 160

I , AVERAGE FORWARD CURRENT (AMPS)

F (AV)

2.0

6.0

8.0

Figure 1. Typical Forward Voltage

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

0.2 0.4

1.0

0.6 0.8

0.1

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

25°C

TJ = 150°C

100

1.0 1.2

75°C

VR, REVERSE VOLTAGE (VOLTS)

02010 30 40

0.001

0.01

0.1

100

I , REVERSE CURRENT (mA)

Figure 2. Maximum Forward Voltage

1.0 75°C

TJ = 150°C

125°C

25°C

Figure 3. Typical Reverse Current

140 150

100°C

Figure 4. Maximum Reverse Current

0100 125 150 175

SQUARE WAVE

RATED VOLTAGE APPLIED

RqJA = 16° C/W

Figure 5. Current Derating, Case Per Leg

RqJA = 60° C/W

(NO HEATSINK)

Figure 6. Current Derating, Ambient Per Leg

VR, REVERSE VOLTAGE (VOLTS)

02010 30 40

0.001

0.01

0.1

100

I , REVERSE CURRENT (mA)

1.0

75°C

TJ = 150°C

125°C

25°C

100°C

0.1 0.3 0.5 0.7 0.9 1.10.0 1.3

125°C

vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

0.2 0.4

1.0

0.6 0.8

0.1

i , INSTANTANEOUS FORWARD CURRENT (AMPS)

25°C

TJ = 150°C

100

1.0 1.2

75°C

0.1 0.3 0.5 0.7 0.9 1.10.0 1.3

125°C

170 175

165

MBR1535CT, MBR1545CT

http://onsemi.com

P , AVERAGE FORWARD POWER DISSIPATION (WATTS)

F (AV)

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

04 12816

SQUARE WAVE

Figure 7. Forward Power Dissipation Figure 8. Typical Capacitance

20 24 28 30

VR, REVERSE VOLTAGE (VOLTS)

500

300

050

700

C, CAPACITANCE (pF)

10 20 30

200

TJ = 25°C

f = 1 MHz

100

600

400

800

900

2106 14182226

TJ = 175°C

MBR1535CT, MBR1545CT

http://onsemi.com

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 6:

PIN 1. ANODE

2. CATHODE

3. ANODE

4. CATHODE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.161 3.61 4.09

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.014 0.025 0.36 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 --- 1.15 ---

Z--- 0.080 --- 2.04

123

SEATING

PLANE

−T−

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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MBR1535CT/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

PUBLICATION ORDERING INFORMATION

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USA/Canada

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Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

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Email: orderlit@onsemi.com

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