SZNUP2125WTT3G - ON SEMICONDUCTOR

October, 2018 − Rev. 5

1Publication Order Number:

NUP2125/D

NUP2125, SZNUP2125

ESD Protection Diode

Dual Line CAN Bus Protector

The SZ/NUP2125 has been designed to protect the CAN transceiver

from ESD and other harmful transient voltage events. This device

provides bidirectional protection for each data line with a single

compact SC−70 (SOT−323) package, giving the system designer a low

cost option for improving system reliability and meeting stringent

EMI requirements.

Features

•200 W Peak Power Dissipation per Line (8/20 ms Waveform)

•Diode Capacitance Matching

•Low Reverse Leakage Current (< 100 nA)

•IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4

− IEC 61000−4−4 (EFT): 50 A – 5/50 ns

− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)

•ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A (1/50 ms)

•ISO 7637−3, Repetitive Electrical Fast Transient (EFT)

EMI Surge Pulses, 50 A (5/50 ns)

•Flammability Rating UL 94 V−0

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These are Pb−Free Devices

Applications

•Automotive Networks

♦CAN / CAN−FD

♦Low and High−Speed CAN

♦Fault Tolerant CAN

www.onsemi.com

See detailed ordering and shipping information on page 2 of

this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAM

SC−70

CASE 419

(Note: Microdot may be in either location)

25MG

25 = Specific Device Code

M = Date Code

G= Pb−Free Package

CAN

Transceiver

CAN_H

CAN_L

NUP2125

CAN Bus

PIN 1

PIN 3

PIN 2

NUP2125, SZNUP2125

www.onsemi.com

MAXIMUM RATINGS (TJ = 25°C, unless otherwise specified)

Symbol Rating Value Unit

PPK Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1) 200 W

TJOperating Junction Temperature Range −55 to 150 °C

TJStorage Temperature Range −55 to 150 °C

TLLead Solder Temperature (10 s) 260 °C

ESD Human Body Model (HBM)

Machine Model (MM)

IEC 61000−4−2 Contact

IEC 61000−4−2 Air

ISO 10605 150 pF / 2 kW Contact

ISO 10605 330 pF / 2 kW Contact

8.0

1.6

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 1.

ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

Symbol Parameter Test Conditions Min Typ Max Unit

VRWM Reverse Working Voltage (Note 2) 24 − − V

VBR Breakdown Voltage IT = 1 mA (Note 3) 27 28.5 32 V

IRReverse Leakage Current VRWM = 24 V −15 100 nA

VCClamping Voltage IPP = 1 A (8/20 ms Waveform)

(Note 4)

−33.4 36.6 V

VCClamping Voltage IPP = 3 A (8/20 ms Waveform)

(Note 4)

−44 50 V

IPP Maximum Peak Pulse Current 8/20 ms Waveform (Note 4) − − 3.0 A

CJCapacitance VR = 0 V, f = 1 MHz (Line to GND) −7.0 10 pF

VR = 5 V, f = 1 MHz (Line to GND) −4.5 6.0 pF

VR = 5 V, f = 1 MHz (Line to GND),

TA = +150°C

−5.0 −pF

DCDiode Capacitance Matching VR = 0 V, 5 MHz (Note 5) −0.26 2 %

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater

than the DC or continuous peak operating voltage level.

3. VBR is measured at pulse test current IT

4. Pulse waveform per Figure 1.

5. DC is the percentage difference between CJ of lines 1 and 2 measured according to the test conditions given in the electrical characteristics

table.

ORDERING INFORMATION

Device Package Shipping†

NUP2125WTT1G

SC−70

(Pb−Free)

3000 / Tape & Reel

SZNUP2125WTT1G*

NUP2125WTT3G

10000 / Tape & Reel

SZNUP2125WTT3G*

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

NUP2125, SZNUP2125

www.onsemi.com

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

Figure 1. Pulse Waveform, 8 × 20 ms

110

00 5 15 25

t, TIME (ms)

% OF PEAK PULSE CURRENT

WAVEFORM

PARAMETERS

tr = 8 ms

td = 20 ms

td = IPP/2

Figure 2. Clamping Voltage vs Peak Pulse Current

3.5

2.5

2.0

1.5

1.0

0.5

0.0 40

VC, CLAMPING VOLTAGE (V)

IPP

, PEAK PULSE CURRENT (A)

30 35 45 50

100

10 20

c−t

Figure 3. Typical Junction Capacitance vs

Reverse Voltage

VR, REVERSE VOLTAGE (V)

C, CAPACITANCE (pF)

10 15 20 25

125°C

625°C

20 22 24 26 28 30 32 34

Figure 4. VBR versus IT Characteristics

TA = −55°C

125°C

25°C65°C

VBR, VOLTAGE (V)

, (mA)

Figure 5. IR versus Temperature Characteristics

012345

−55°C

TA = +150°C

+25°C

IL, LEAKAGE CURRENT (nA)

VR, REVERSE BIAS VOLTAGE (V)

100

120

−60 −30 0 30 60 90 120 150 180

Figure 6. Temperature Power Dissipation Derating

TEMPERATURE (°C)

PERCENT DERATING (%)

3.0

NUP2125, SZNUP2125

www.onsemi.com

Surge Protection Diode Circuit

Surge protection diodes provide protection to a

transceiver by clamping a surge voltage to a safe level. Surge

protection diodes have high impedance below and low

impedance above their breakdown voltage. A surge

protection Zener diode has its junction optimized to absorb

the high peak energy of a transient event, while a standard

Zener diode is designed and specified to clamp a

steady state voltage.

Figure 7 provides an example of a dual bidirectional surge

protection diode array that can be used for protection with

the high−speed CAN network. The bidirectional array is

created from four identical Zener TVS diodes. The

clamping voltage of the composite device is equal to the

breakdown voltage of the diode that is reversed biased, plus

the diode drop of the second diode that is forwarded biased.

Figure 7. High−Speed and Fault Tolerant CAN Surge

Protection Circuit

CAN

Transceiver

CAN_H

CAN_L

NUP2125

CAN Bus

NUP2125, SZNUP2125

www.onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

STYLE 11:

PIN 1. CATHODE

2. CATHODE

3. CATHODE

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

NUP2125/D

Honeywell and SDS are registered trademarks of Honeywell International Inc.

DeviceNet is a trademark of Rockwell Automation.

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Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

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