ANALOG PMI) DEVICES/ PMI DIV @be D @@ 0416805 000902b 1 m@ JM38510/13501/13502 ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIERS ELT yO | FEATURES @ LOW Vag ccs ccc rece c eee cen er eeseeesseteeeene 2ORWV e Low Vog Drift... cece eee v nsec ces ereevens 0.6pVC @ LOW NOISE co.cc eee e eee cnet rene een evans O6EVE.5 @ Wide Supply Voltage Range.......... 1+ 4.5V to 20V ORDERING INFORMATION JAN SLASH SHEET PMI DEVICE JM38510/13501BGC OP07AJ1/38510 JM38510/13501BGA OP07AJ5/38510 JM38510/13501SGA OPO7SAJ5/38510 JNG8510/13501BPB OP07AZ2/38510 JMQ8510/13501BPA OP07AZ5/38510 JM38510/13501SPA OP07SAZ8/38510 JM8510/135028GC OP07J1/38510 JM38510/13502BGA OP07J538510 JM38510/13502SGA OPO07S.J5/38510 JM38510/135028PB OP0722/38510 JM38510/13502BPA OP07Z5/38510 JM38510/13502SPA OP07SZ5/38510 GENERAL DESCRIPTION This data sheet covers the electrical requirements for a mono- lithic, low offset voltage, Internally-compensated operational amplifier as specified in MIL-M-38510/135 for device type 01 and 02. Devices supplied to this data sheet are manufactured and tested at PMI's MIL-M-38510 centified facility and are listed in QPL-38510, Complete device requirements will be found In MIL-M-38510 and MIL-M-38510/135 for Class B and Class S processed de- vices. GENERIC CROSS-REFERENCE INFORMATION This cross-reference information is presented for the con- venience of the user. The generic-industry types listed may not have identical operational performance characteristics across the military temperature range or reliability factors equivalent to the MIL-M-38510 device. MILITARY DEVICE TYPE GENERIC-INDUSTRY TYPE ot OPO7A 02 OPO07 For an 833-processed device with improved electrical speci- fications, review the OP-07 data sheet. PIN CONNECTIONS 8 Vos TRIM Vos TRIM hs, fs Vos TRIM Vos TRIM 1 7V+ ~IN[2] 7 ive ane ' jour -IN2 60UT v-L] Ps] Nc. 4IN3 SNC 8-PIN HERMETIC DIP 4 V- {CASE} TIN-REFLOW LEAD TYPE TO-99 (Z2-Suftix) GOLD-PLATE LEAD TYPE SOLDER-DIPPED- (J1-Suftix) LEAD TYPE SOLDER-DIPPED LEAD TYPE (Z5-Suftix) (J5-Suftix) POWER AND THERMAL CHARACTERISTICS Maximum Allowable Maximum Maximum Power Dissipation 830 Oua 120C/W Case Outline Package P Dual-In-Line 208mW @ Ta= 125C 9 =60C/W G 8-Lead CAN 167MW @ Ta= 125C 940C/W 150C/W SIMPLIFIED SCHEMATIC Vt $ SR2A S nope : 3 Z(H F Les *NOTE: <,.,! s 2 . #24 AND 828 ARE SRIA Saw ELEGTAGNICALLY 4 ADJUSTED ON CHIP AT FACTORY. Zs ard | tt +8 c2 a17 SON~ INVERTING O INPUT INVERTING INFUT a4 5-598 8/89, Rev. A3| JM38510/13501/13502 ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIERS ANALOG DEVICES/ PMI DIV ebE D M@ 0816805 000502? 3 ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS Supply Voltage (Veg) vices cececccseceeseneereenee LOQV Supply Voltage Range ........cseeeceeees 4,5V to 20V Input Voltage Range (Vin) .... cece cere eer eeer sane EVGG Ambient Temperature Range ......6+...+ 55O to +125C Differential input Voltage Range ..... cece eeeeeees EOOV Output Short-Circuit Duration Note 1) Lead Temperature (Soldering, 60 sec) ........60+- F300C T-79-06-1 0 Storage Temperature Range .........006765C to +150C Junction Temperature (Ty)... ec eee e ence ene e es FISOPG Maximum Power Dissipation (Pp) (Note 2) ....-... S00mW NOTES: 1, Output may be shorted to ground indefinitely at Vg = 15V, Ta = 25C. Temperature and/or supply voltages must be limited to ensure dissipation rating is not exceeded. 2. Maximum power dissipation versus ambient temperature. ELECTRICAL CHARACTERISTICS at 4.5V $ VocoS20V and -55C < Ta 125C, Rg =502 unnulled, unless otherwise noted. 01 LIMITS 02 LIMITS PARAMETER SYMBOL CONDITIONS MIN MAX MIN MAX UNITS 5 Ta = 25C ~25 25 -78 "15 Input Offset Voltage Vio {Notes 1, 2) -60 60 200 200 BV 9 Input Offset Voltage _ _ fy Temperatura Sensitivity AVio/AT (Note 1) 0.6 0.6 1.3 13 BVP fe = 25 -2 2 tli Ta = 25C (Note 1) 2 2 3 3 a 4 4 -6 6 NN Input Bias Current ; nA Q ~he Ta=28C note 1) 2 2 -3 3 fe -4 4 ~6 6 = G ph Ta = 25 ~2 2 ~2.8 2.8 wd Input Offset Current lio (Note 1) 4 4 58 56 nA & +PSAR +Vog = 20V to SV, -Vog = -15V _ 10 _ 10 < Ta = 25C =) _pSRAR +Veg = 18V, -Veg = -20V to -5V _ 10 _ 0 s Ta = 25C = re Power Supply Rejection Ratio +PSRR #Vog = 20V to SV, Veg = ~15V = 20 = 20 BVIV 3 -PSAR +Veg = 15V, Veg = -20V to -5V - 20 - 20 Voc = #4.6V to 20V _ 10 _ 0 5 PSAR Tx = 25C Voc = 4.5V to 20V _ 20 _- 20 NOTES: 1. Tested at Vou = 0, Veg = 18V. 2. Due to the inherent warm-up drift, testing shall occur no sooner than three (3) minutes after application of power. 5-599 8/89, Rev. A3ANALOG DEVICES/ PMI DIV ELECTRICAL CHARACTERISTICS att4.5V< V noted. Continued ebE D Mm 04146805 0009028 5 mm JM38510/13501/13502 ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIERS oc 20V and -55C s T, < +125C, Rg = 50Q unnulled, unless otherwise 07 LIMITS uz LIMULUS PARAMETER SYMBOL CONDITIONS MIN MAX MIN MAX UNITS Veuatt8V, T, = +25C, V.. = 15V 110 - 110 - . cacti GM TA os Common-Mode Rejection Ratio CMRR Vou #18C, Vag = #15V 106 _ to6 _ dB - VigAdi(#} T, = +25C (Note 1) 0.5 ~ 0.5 - 10 A Adjustment for Input Offset Vo Adi (3 T, = 425C (Note 1) ~ 05 _ 05 mV T, = +25C, +125C -65 - ~65 - A . loses ts 25ms (Notes 1,3) T, =-85C -70 _ ~70 _ Output Short-Ciecuit Current mA T, = +25C, +125C - 65 - 65 A , losey t<25ms (Notes 1,3) T, =-55C _ 70 . 70 T, = 25C - 4 - 4 A Supply Current leg (Note 1) _ 5 _ 5 mA - a R, = 1k2(Note 1) -10 10 -10 10 L Qutput Voltage Swing (Minimum) Vop Ry = 2k (Note 1) 12 12 -12 12 Vv . j = 425 - - Open Loop Voltage Gain Ave; Ty = #25C 300 200 Vim (Single-Ended) vs (Notes 1, 2} 200 = 150 - Stew Rate SA(+), SR(-) Vin = 10V,T, = +25C, (Note 1) 0.08 - 0.08 - Vips fg = 10Hz - 18 - 18 Input Noise Voltage Density e, fg = 100Hz,T, = +25C (Note 1) - 14 ~ 14 nvi/Hz f= 1kHz - 42 - 12 Low Frequency Input Noise e t20.1Hz to 10Hz,T, = 25C, {Note 1 - 06 - 06 NV Vollage ap-p =0.1NZ to ty = 28C, ) 5 . Wy. NOTES: 1. Tested at Ve .4=0, Veg = F1SV. 2. Voyz 20 to +10V for Aye), and Vay, = 0 to -10V for Aysy-p RL = 2kQ. 3. Continuous short-circuit limits are considerably less than the indicated test lim- its, since maximum power dissipation cannot be exceeded, 5-600 8/89, Rev. A3