SIEMENS NPN Silicon AF Transistor BC 846 W ... BC 850 W Features @ For AF input stages and driver applications @ High current gain @ Low collector-emitter saturation voltage @ Low noise between 30Hz and 15 kHz @ Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, 4 BC 860 W (PNP) SO05561 Type Marking Ordering code | Pin Configuration Package (tape and reel) |1 2 3 BC 846 AW 1As Q62702-C2319 |B E c SOT 323 BC 846 BW 1 Bs Q62702-C2279 SOT 323 BC 847 AW 1Es Q62702-C2304 SOT 323 BC 847 BW 1Fs Q62702-C2305 SOT 323 BC 847 CW 1Gs Q62702-C2306 SOT 323 BC 848 AW iJs Q62702-C2307 SOT 323 BC 848 BW 1Ks Q62702-C2308 SOT 323 BC 848 CW ils Q62702-C2309 SOT 323 BC 849 BW 2Bs Q62702-C2310 SOT 323 BC 849 CW 2Cs Q62702-C2311 SOT 323 BC 850 BW 2Fs Q62702-C2312 SOT 323 BC 850 CW 2 Gs Q62702-C2313 SOT 323 Semiconductor Group 483 04.96SIEMENS BC 846W ... BC 850W Maximum Ratings BC846W BC 847 W Description Symbol BC 849 W BC 848 W Unit BC 840 W Collector-emitter voltage VcEo 65 45 30 Vv Collector-base voitage Veso 80 50 30 Vv Collector-emitter voltage Vees 80 50 30 Vv Emitter-base voltage Vepo 6 6 5 Vv Collector current Ic 100 mA Collector peak current Tom 200 mA Total power dissipation, Ts=115 C Prot 250 mw Junction temperature Tj 150 Cc Storage temperature range Tstg ~65 to 150 Cc Thermal Resistance Junction - ambient) Rthsa < 240 K/W Junction - soldering point Rih ss < 105 KAW 1)Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/1 cm? Cu. Semiconductor Group 484SIEMENS BC 846W ... BC 850W Characteristic at 7s = 25 C, unless otherwise specified. Description Symbo! Ratings Unit min. | typ. | max. DC Characteristics Collector-emitter breakdown voltage Vierjceo Vv Ic=10MA BC 846 W 65 ~ ~ BC 847 W, BC 850 W 45 ~- - BC 848 W, BC 849 W 30 ~ - Collector-base breakdown voltage Vierycao Vv Ic = 100 pA BC 846 W 80 ~ - BC 847 W, BC 850 W 50 ~ ~ BC 848 W, BC 849 W 30 ~ - Collector-emitter breakdown voltage Vigricao Vv Ic = 10 yA, Vee=0 BC 846 W 80 ~ - BC 847 W, BC 850 W 50 ~ - BC 848 W, BC 849 W 30 ~ ~ Emitter-base breakdown voltage Vieryeso Vv Je=10 pA BC 846 W, BC 847 W 6 BC 848 W, BC 849 W 5 ~ - BC 850 ~ = Coilector-base cutoff current Ic8o Vce = 30V - - 15 nA Vea = 30 V, Ta= 150C - - 5 pA DC current gain Are - Ic=10yA, Vee=5V BC 846 AW... BC 848 AW - 140) |- BC 846 BW ... BC 850 BW - 250 j- BC 847 CW ... BC 850 CW - 480 i- Ic=2mA, Vce=5V BC 846 AW... BC 848 AW 110 180 220 BC 846 BW ... BC 850 BW 200 |290 | 450 BC 847 CW... BC 850 CW 420 520 800 Collector-emitter saturation voltage) Veesat mV Ic=10mMA, J2=0.5 mA - 90 250 Ic = 100 mA, Je =5mMA - 900 650 Base-emitter saturation voltage) Veeset mv Ic = 10MA, le=0.5 MA - 700 - Ic= 100 mA, fe=5 mA - 900 - Base-emitter voltage Veeset mv Ie=2mA, Vce=0.5 mA 580 660 700 Ic=10MA, Vee= 5 mA - - 770 Pulse test : < 300 ps, D= 2 %. Semiconductor Group 485SIEMENS BC 846W ... BC 850W Characteristics at Ts = 25 C, unless otherwise specified. Description Symbol Ratings Unit min. |typ. | max. AC Characteristics Transition frequency it MHz Ic = 20 mA, Vee = 5 V, f= 100 MHz - 250 - Output capacitance Cobo pF Ves = 10 V, f= 1 MHz - 2 - Input capacitance Ciro pF Ves = 0.5 V, f= 1 MHz -_ 10 - Short-circuit input impedance Aire kQ Ic=2 mA, Vee=5V, f= 1 kHz BC 846 AW ... BC 849 AW - 2.7 ~ BC 846 BW ... BC 850 BW _ 4.5 - BC 847 CW... BC 850 CW; - 8.7 - Open-circuit reverse voltage transfer ratio hize 10-4 Ic=2mMA, Vce=5 V, f= 1 kHz BC 846 AW ... BC 849 AW - 1.5 - BC 846 BW ... BC 850 BW - 2.0 - BC 847 CW ... BC 850 CW - 3.0 ~ Short-circuit forward current transfer ratio hate Ic=2mA, Vee=5V, f= 1 kHz BC 846 AW ... BC 849 AW - 200 |- BC 846 BW ... BC 850 BW - 330 | - BC 847 CW ... BC 850 CW - 600 |- Open-circuit output admittance hove pS Ic=2mA, Vee=5 V, f= 1 kHz BC 846 AW ... BC 849 AW - 18 - BC 846 BW ... BC 850 BW - 30 - BC 847 CW ... BC 850 CW - 60 - Noise figure F dB Ic =0.2 mA, Vee =5 V, Rs = 2 kQ BC 849 W 1.4 4 f = 30 Hz... 15 KHz BC 850 W - 1.4 3 f = 1 kHz, Af = 200 Hz BC 849 W - 1.2 4 BC 850 W - 1.0 4 Equivalent noise voltage Va pV Ie=0.2 mA, Vee =5 V, Rs = 2 kOQ f=10Hz... 50Hz BC 850 W - - 0.135 Curves see BC 846 ... BC 840 Semiconductor Group 486SIEMENS BC 846W ... BC 850W Totai power dissipation Pio = f (Ta*; Ts) Collector-base capacitance Ccuo = f (Vcxo) * Package mounted on epoxy Emitter-base capacitance Ceso = f (Vero) 400 Enpo0g44 1.2 BC 846.850 EHPOO361 mw Cong pF A tol (Cea ) 10 300 N \ YETI NLL 8 h iy 200 N | 6 \ 4 100 \ : 0 N 0 0 50 100 c 150 10-1 5 19 Vv to! hils > Vag (Vengo) Permissible pulse load Piame/Potoc =f (tp) Transition frequency ft = f (ic) Vcr = 5 V o BC 846...850 EHP00362 BC 846...850 EHPOOS6S eT aH ro SS TTT TTC woe UUM TTT TTS o 10 1075 1074 1079 107 5 ~~ 10 107" 10 5 10' ma 102 f f Semiconductor Group 487SIEMENS BC 846W ... BC 850W Collector cutoff current /ceo = f (Ta) Vea = 30 V 104 eHPO0381 nA laa | 105 5 10? 5 107! 0 50 100 C 150 - |, DC current gain Are = f (/c) Vee=5V 105 246.880 EHPOO3ES 5 [100 hee 102 10! 190 10-2, 510-' 10 510! mA 10? i Semiconductor Group Collector-emitter saturation voltage Ic =f (Vesa), Are = 20 10 2 8C_846...850 EHPO0367 mA I 10! 107! 0 Of 02 O03 04905 Vor sat Base-emitter saturation voltage Ic = f (Veesat), Are = 20 102 BC 846...850 EHPOO364 I, mA to! 10 0 O2 O04 06 08 V4.2 _ Vee sat 488SIEMENS BC 846W ... BC 850W h parameter he = f (Jc) normalized Vcee= 5 V 192 BC 846.880 EHPOOS68 5 10 107" 1o-! 5 10 Noise figure F = f (Vcc) Ic =0.2 mA, Rs = 2 kQ, f= 1 KHz 20 BC B46...850 dB 10-7" = 540 10! v V7, ce Semiconductor Group mA 101 HPO0370 102 h parameter A. = f (Vcc) normalized Ie=2mMA BC 846...850 EHPOOSES 2.0 =2mA 0.5 Noise figure F = f () Ie=0.2 mA, Vee = 5 V, Rs = 2k BC _846...850 HP00371 20 d8 107 19 10! kHz 10? - f 489SIEMENS BC 846W ... BC 850W Noise figure F = f (Ic) Vee=5V, f= 120 Hz BC B46...850 EHP0O372 20 d8 10 0 to-3 1972 107! ~ i, Noise figure F = f (/c) Vee = 5 V, f= 10 kHz BC_846...850 EHPOO374 20 dB 0 to-3 10-2, 107! eh Semiconductor Group 10 mA 10! 10 mA 10! Noise figure F = f (/c) Vce = 5 V, f= 1 kHz BC 846...850 cHPOO373 20 dB 10 0 to-3 10-2, 107" ~ 108 ~maA 10! ol 490