TEXAS INSTR {OP TOF bo DEQ S5b172b OO3bb23 4 f T-33-31 { 8581726 TEXAS INSTR COPTOD 62C 36623 OD - 7 weal . , f BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS REVISED OCTOBER 1984 @ 60Wat 25C Case Temperature @ 8AContinuous Collector Current @ Minhpfe of 750 at3V,3A device schematic - TO-220AB PACKAGE EMITTER COLLECTOR r 1 t ' i i 1 t { t THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted} BDX54_| BDXS4A | BDX54B | BDX54C current current at Gase temperature at temperature temperature range Storage temperature NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.48 W/C. 2. Derate linearly to 150C free-air temperature at the rate of 16 mW/C. n o 2 > @ a > =) co x = a > a * Qa co = a) a a a 20a . le . TEXAS % 3-27 . INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 7be ER Adbi72eb OO3bbe4 &b i TEXAS INSTR fCOPTOF SOe1726 TEXAS INSTR COPTO) 620 36624. D - - - PO T-33-31 BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS BDX54B UNIT MIN TYP MAX | MIN TYP MAX | MIN TYP MAX | MIN TYP MAX ViBRICEO oem Ip = 0, 45 60 80 ~ 100 v Iceo BA 'cBo , See Notes 3 and Veeisat) See Notes 3 and 4 * ~ 2:8 bre Vv - CE lsat) See Notes 3 and 4 2 NOTES: 3. These parameters must be measured using pulse techniques, ty = 300 us, duty cycle < 2%. 4. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts and located within w + 3,2mm (0.125 inch) from the device body. o - - thermal! characteristics ! g PARAMETER MIN TYP MAX | UNIT Resc 2.08 oc = Resa 62.5 wg _ resistive-load switching characteristics at 25C case temperature oO PARAMETER TEST CONDITIONS MIN TYP MAX | UNIT x ton igs -3A, ig) = 12mA, Ip2 = 12 mA, i wo toff Vee(off) =4.2V, AL = 109, Sea Figure 1 6 ad ow a Fa Oo Cc ~< - Oo a s. a oO n } e - 3-28 TEXAS INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR {OPTO} be . DEM ascz726 onseeas a y BIG1726 TEXAS INSTR COPTOY ~~" wae 36625 | BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS ST T-33~31 ee PARAMETER MEASUREMENT INFORMATION INPUT MONITOR ae eee wwe ewe we wee me 1NO14 Raat = 500 2 1N914 1N914 1N914 270 pF > wa Raga = 160 2 RL=102 > ~ Veo =30V Vaa1* 44V a * ADJUST FOR a Von * 42 V AT + INPUT MONITOR - je INPUT 4.2V y.10% ~ monitor V - am ZL Von =-42V - 80% . OUTPUT 90% i MONITOR \ 10% VOLTAGE WAVEFORMS NOTES: A. Vgenis a 30-V pulse intoa 50 Q termination. B. The Vggn waveform is supplied by a generator with the following characteristics: ty < 15 ns, ty< 151s, Zout = 502, ~ ty = 20ps, duty cycle < 2%. . : . Waveforms are monitored on an oscilloscope with the following characteristics: t,< 15ns, Rin 2 10 MQ, Cin < 11.5 pF. . Resistors must be noninductive types. - . The d-c power supplies may require additional bypassing in order to minimize ringing. moo FIGURE 1. RESISTIVE-LOAD SWITCHING BD, BDW, BDX, BU, BUX, BUY Devices 463 . . fi TEXAS % 3-29 INSTRUMENTS POST OFFICE 80X 225012 @ DALLAS, TEXAS 75285 Cert eee a ee een coer ee ee paTEXAS ~ o_o INSTR LOPTOF DEB sser726 noaneen o Lr ! 26 TEXAS INSTR COPTO) | S8dIA9 G Ang xng na xag mag aa BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS w ret 620 36626 OD y T-33-31 : STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT _ 10k VoE=-3V See Notes 3 and 4k akbTc= 400 hFeE Static Forward Current Transter Ratio 100 0.4 -1 -4 -10 Ic Collector Current A FIGURE 2 COLLECTOR-EMITTER SATURATION VOLTAGE . vs CASE TEMPERATURE ~4 See Notes 3 and 4 ig mA, Ic=65 A IB=-2mA,lc=-1A 0.4 Ip=~-12mA,!c=-3 VCE(sat) Collector Emitter Sat Voltage - V -50 0 50 100 150 Tc Case Temperature c FIGURE 4. TYPICAL CHARACTERISTICS BASE-EMITTER VOLTAGE vs CASE TEMPERATURE 3.2 VcE=-3V 2.8 |- See Notes 3 and 4 I 1 oN NS > VBE Base Emitter Voltage V ! & 1.2 0.8 0.4 0 7 -50 Q 50 100 150 Tc Case Temperature C FIGURE 3 SMALL SIGNAL COMMON EMITTER FORWARD CURRENT TRANSFER RATIO vs FREQUENCY 8 Vee=10V ic=-1A To=25C - o >_ _ |hfel Small Signal Forward Current Transfer Ratio 4 10 f Frequency MHz FIGURE 5 NOTES: 3. These parameters must be measured using pulse techniques, ty = 300 ps, duty cycle < 2%. 4. These parameters are measured with voltage-sensing contacts separate from the current- vearrying contacts and located within 3,2 mm (0,125 inch) from the device body, 3-30 TEXAS wy ; INSTRUMENTS POST OFFICE 80X 225012 DALLAS, TEXAS 75265 @ __- 7 TEXAS INSTR LOPTO? b2 ve acci72, ooanee7 1 " T-33-31 : BDX54, BDX54A, BDX54b, BUAD4U P-N-P SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING AREA MAXIMUM COLLECTOR CURRENT - vs COLLECTOR-EMITTER VOLTAGE Te <28C < See Note 5 d 8 3 3 8 2 8 i E . i E BDX53 , 1 BDX53A oO BDX53B BDX53C 4 4 10 40 100 400 | Vee Callector-Emitter Voitage V : FIGURE 6 : NOTES: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive load. - THERMAL INFORMATION CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE . DISSIPATION DERATING CURVE 8 v wl o Rojo <2.08 c/w nN Rega <62.5 CW = a _ o S a n a & > a QO > = ma x a) faa] =) co x a a =. a mo a oO Py Maximum Continuous Device Dissipation W 8 8 8 8 8 Py Maximum Continuous Davice Dissipation W 0 0 25 50 75 100 125 150 0 a 50 78 100 4125 150 Tc Case Temperature c Ta Free-Air Temperature c FIGURE 7 FIGURE 8 1283 Ss TEXAS 3-31 INSTRUMENTS POST OFFICE 80X 225012 @ DALLAS, TEXAS 75266 L " oe ~ . et re en Te RRR appre ce oe gee toe See