New Product MBRF2090CT, MBRF20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier FEATURES TMBS (R) * Trench MOS Schottky technology ITO-220AB * Low power losses, high efficiency * Low forward voltage drop * High forward surge capabilty * High frequency operation 1 MBRF2090CT MBRF20100CT PIN 1 2 * Solder bath temperature 275 C max. 10 s, per JESD 22-B106 3 * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC PIN 2 * Halogen-free according to IEC 61249-2-21 definition PIN 3 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 90 V, 100 V IFSM 150 A VF at IF = 10 A 0.65 V TJ max. 150 C MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBRF2090CT MBRF20100CT UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current at TC = 133 C 20 total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IF(AV) A 10 IFSM 150 A dV/dt 10 000 V/s Operating junction and storage temperature range TJ, TSTG - 65 to + 150 C Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Voltage rating of change (rated VR) Document Number: 89319 Revision: 21-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 New Product MBRF2090CT, MBRF20100CT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode SYMBOL VALUE TC = 25 C IF = 10 A 0.80 VF TC = 125 C IF = 20 A (1) V 0.65 0.75 TJ = 25 C Maximum reverse current per diode at working peak reverse voltage UNIT IR (2) TJ = 100 C 100 A 6.0 mA Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 C unless otherwise noted) PARAMETER SYMBOL MBRF UNIT RJC 3.5 C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB MBRF20100CT-M3/4W 1.75 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 160 Peak Forward Surge Current (A) Average Forward Current (A) 20 16 12 8 4 Resistive or Inductive Load TJ = TJ Max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 50 0 100 150 1 10 100 Case Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetititve Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 89319 Revision: 21-Sep-10 New Product MBRF2090CT, MBRF20100CT Vishay General Semiconductor 10 000 TJ = 150 C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 125 C 1 0.1 TJ = 25 C 0.01 TJ = 25 C f = 1 MHz Vsig = 50 mVp-p 1000 100 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitanc Per Diode 10 TJ = 150 C Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) 100 10 TJ = 125 C 1 0.1 0.01 TJ = 25 C 20 30 40 50 70 60 90 80 1 0.1 0.01 0.001 0.1 0.001 10 Junction to Case 100 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.076 (1.93) REF. 45 REF. 7 REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.671 (17.04) 0.651 (16.54) PIN 1 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 3 7 REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) Document Number: 89319 Revision: 21-Sep-10 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.110 (2.79) 0.100 (2.54) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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