Document Number: 89319 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Dual Common-Cathode High-Voltage Schottky Rectifier
MBRF2090CT, MBRF20100CT
Vishay General Semiconductor
New Product
FEATURES
Trench MOS Schottky technology
Low power losses, high efficiency
Low forward voltage drop
High forward surge capabilty
High frequency operation
Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 10 A
VRRM 90 V, 100 V
IFSM 150 A
VF at IF = 10 A 0.65 V
TJ max. 150 °C
PIN 1 PIN 2
PIN 3
TMBS ®
ITO-220AB
123
MBRF2090CT
MBRF20100CT
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF2090CT MBRF20100CT UNIT
Maximum repetitive peak reverse voltage VRRM 90 100 V
Working peak reverse voltage VRWM 90 100 V
Maximum DC blocking voltage VDC 90 100 V
Maximum average forward rectified current
at TC = 133 °C
total device
IF(AV)
20
A
per diode 10
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 150 A
Voltage rating of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
Isolation voltage from termal to heatsink t = 1 min VAC 1500 V
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89319
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Sep-10
MBRF2090CT, MBRF20100CT
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetititve Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage per diode
IF = 10 A
TC = 25 °C
VF (1)
0.80
V
TC = 125 °C
0.65
IF = 20 A 0.75
Maximum reverse current per diode
at working peak reverse voltage
TJ = 25 °C
IR (2) 100 μA
TJ = 100 °C 6.0 mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF UNIT
Typical thermal resistance per diode RθJC 3.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB MBRF20100CT-M3/4W 1.75 4W 50/tube Tube
0
4
8
12
20
050 100 150
16
Case Temperature (°C)
Average Forward Current (A)
Resistive or Inductive Load
40
60
100
80
140
120
160
1 10010
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Document Number: 89319 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
MBRF2090CT, MBRF20100CT
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitanc Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0 0.20.1 0.5 1.00.40.3
1
100
10
0.01
0.1
0.6 0.7 0.8 0.9
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
2010 10040 60 80
1
10
0.01
0.1
100
0.001
30 50 70 90
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1 10 100
1000
10 000
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
0.1 101 100
1
10
0.001
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
0.01
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
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Revision: 12-Mar-12 1Document Number: 91000
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