matched dual wa nic n-channel JFETs Performance Curves NT designed for... BENEFITS Matching Characteristics Specified e eogfe . @ Differential Amplifiers High Input Impedance . Iq = 1 pA Max (2N59069) @ High Input Impedance Amplifiers 10-78 See Section 7 *ABSOLUTE MAXIMUM RATINGS (25C) M10 O02 Gate-to-Gate Voltage ............... beeen eee +80 V 1 tos Gate-Drain or Gate-Source Voltage ............... 40V Gate Current ... 0.0... cece ee ee eee ..10mA $10 O82 Device Dissipation (Each Side), Ta = 25C ge f | a2 So Dy Sy (Derate 3 MW/C) ... 0... eee eee eee) 367 MW Total Device Dissipation, Ta = 25C (Derate 4mW/C) 1... 00.0. Storage Temperature Range.............. -65 to +150C BOTTOM VIEW 2 G2 606SNZ S806SNZ ZLO6SNZ 906SNZ SO6SNC PO6SNZ CO6SNZ ZO6SNZ *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N5902-5 2N5906-9 Characteristic Unit Test Conditions Min Max Min Max yy Gate Reverse C = 2} PA | vgg=-20V,Vos=0 "TI ate Reverse Current =-) ' = 2l, Gss -10 5 nA cs os 125C 3]7]8VGss _Gate-Source Breakdown Voltage ~40 -40 Ig =-1 KA, Vps = 90 4] 4 Vas(oft) Gate-Source Cutoff Voltage ~0.6 AS -0.6 -4.5 Vv Vos =10V, Ip=10A 511 | Voes Gate Source Voltage 4 -4 sic i Gate Operating Ci t 3 a PA | Yoo = 10V. Ip = 30 HA urren 71 ([S Pers =3 1 [na 125C 8 lpss Saturation Drain Current 30 500 30 500 pA Common-Source Forward 2 Sfs Transconductance 70 | 250 70 | 250 umho f= 1kHz 10 dos Common-Source Output Conductance 5 5 Vps = 10 V. Vgs =90 W Ciss Common-Source Input Capacitance 3 3 Common-Source Reverse Transfer pF f= 1 MHz 121 | Crs Covey 15 15 dl N apacitance A Common-Source Forward 13 50 150 50 150 _I " Ms Transconductance umho | Vpg = 10V, Ip = 30uA 144 c L908 Common-Source Output Conductance 1 1 f= kHz Equivalent Short Circuit Input BV 15 en Noise Vottage 02 ot Vaz ~~ Vos = 10V. VGs = 9 f= 100 Hz 16 NF Spot Noise Figure 3 1 dB Rg =10M 2N5902, 6 | 2N5903,7 | 2N5904,8 | 2N5905,9 Characteristic Unit Test Conditions Min | Max | Min | Max | Min | Max | Min | Max 7 Hheranol bitterentiat Gate C 2.0 20 2.0 2.0 A Woo = 10M. 2N5902-5 = Gt-IG2 ifferential Gate Current a D= 304A, 18 0.2 0.2 0.2 0.2 Ta = 125C 2N5906-9 19| | 10sst Saturation Drain Current Ratio | gos! 1/095] 1 095] 1 ]}095] 1 | - | Vpg=10V.Vgg-0 om] 'pss2 (Note 1) TA 20 | T | Sst Transconductance Ratio 097] 1]097] 1 Jo95| 1 Joss} 1] - f=1kHz C | 942 {Note 1) sh 2144 Ngsi-Vas2! _ Differentiat Gate-Source Voltage 5 5 10 18 mV IN VoG=10V) 7, = 26 alo a 5 10 20 40 esoua |ao wire AlVqsi1-Vaga! Gate-Source Voltage Differential o,.| 'p = 30x Tg = 125C SJ [SS ori note 21 avi AT 10 20 40 Ta = -55C th 23 5 Tg = 25C ee T = 24 laos 1-B952! Differential Output Conductance 0.2 0.2 0.2 0.2 7] umho f= 1kHz a * JEDEC registered data. NT NOTES: 1, Assumes smaller value in numerator. 2. Measured at end points, Ta and Tp. xXIUODI 1979 Siliconix incorporated 3-41903 2N5904 2N5905 2N5906 2N5907 2N5908 2N5909 2N5902 2N5 iconix APPLICATIONS +12V o -12V +3 TO +15V* 50K -6 TO -15V +3 TO +15V* 2 < < 465K S 405K -t2V *Use lower voltages for minimum Ig = Siliconix +12V +3 TO +15V* 9 +5 TO +15V* -5 TO -15V 3-42 1979 Siliconix incorporatedGATE ALSO BACKSIDE CONTACT S AND D ARE SYMMETRICAL 0.017 10.432} 9.017 : (0432) ALL DIMENSIONS IN INCHES JALL DIMENSIONS iN MILLIMETERS) n-channel JFET designed for... Ultra-High Input Impedance Amplifiers Electrometers pH Meters Smoke Detectors TYPE PACKAGE Single TO-72 Dual TO-78 Single Chip Dual Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristic Ip DRAIN CURRENT WA)V o 12 3 4 6 7 8 98 10 Vos DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics VDs* Ip DRAIN CURRENT WA) & 8 8 nN eS 0 -02 -04 -06 1000 -4,2 Vas GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics 8 a 8 3 2 > s s 2 -0.6 Vas GATE-SOURCE VOLTAGE (VOLTS) 0.2 +04 0.8 -1.0 -1.2 Qf, FORWARD TRANSCONDUCTANCE (umhos} Output Characteristic 200 Ves 20 Ip DRAIN CURRENT WA) ee ee 858338383 6 8 8 8 12 4 Vps' DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics = = x x 8 s 3 S$ ip DRAIN CURRENT uA} $ a -0.4 -0.8 - - VGs GATE-SOURCE VOLTAGE (VOLTS} Transconductance Characteristics g 3 8 3 g 38 Vs GATE-SOURCE VOLTAGE (VOLTS) 0.4 16 4, ~ FORWARD TRANSCONDUCTANCE (umhos) Ip ~ DRAIN CURRENT WA) Ip DRAIN CURRENT (A} Sf, ~~ FORWARD TRANSCONDUCTANCE (umhos) BENEFITS: @ Low Power Ipsg < 90 uA (2N4117) e@ High Input impedance Ig < 1 pA (2N5906-09) PRINCIPAL DEVICES 2N4117-9, 2N4117A-9A, VCR7N 2N5902-9 2N4117CHP-9CHP, 2N4117ACHP-SACHP, VCR7NCHP 2NS590SCHP, 2N5909CHP Output Characteristic ~eerpneeweag $388 $8 828 88 o 41 2 3 5 6 7 & 9 10 Vps DRAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristics 800 =10 Q Ss 3 2 s 8 0 4 -2 -3 -4 5 Vs GATE-SOURCE VOLTAGE (VOLTS) Transconductance Characteristics : 3 g g 8 8 8 > 3 1 ~2 3 4 5 Vas ~ GATE-SOURCE VOLTAGE (VOLTS) 5-29 1979 Siliconix incorporated iN xXIUOSDINT iconix tnss SATURATION DRAIN CURRENT {mA} CURRENT (pA) Drain Current & Transconductance vs Gate-Source Cutoff Voltage 2.0 300 Vos" 10V Vgs=0 fs @ f= 1 kHz Vasiott) @ tp = 19 0.8 O4 Q o 0 2 -4 -6 -3 Vesiott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Leakage Currents vs Ambient Temperature T TEMPERATURE (C) {soywr) FONVLONGNOOSNVEL GY VAMOS 8 PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) ON Resistance & Output Conductance vs Gate-Source Cutoff Voltage 10 10K Qos @ Vig = 20 V, Vag #0, f TkHz @ tp = 10 vA, Veg 20 @Vps=10V, =1nd g 3 > o {SWHO) SONVLSISIH NO 30HNOS-Nivua SA2 dos OUTPUT CONDUCTANCE {umhos) Nn 0 Qo 0 ~2 -4 -6 -8 Vestott) GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Leakage Currents vs Drain-Gate Voltage CURRENT {pA} 0 10 20 30 40 50 Vpg DRAIN-GATE VOLTAGE (VOLTS) Equivalent Input Noise Voltage and Noise Current vs Frequency 13 1 =a Vos730V 10 z Ro Ipgg = 0.047 mA z! I < z S 8 w 100 en @Ip= 0.1 Ipss aut 10-14 g 9 4 rT Se z tit 3 3 ~ is a 2 en @ Ip Ipss TT 4 a a = -15 & 5 10 10 2 3 1 = = in Ip = ings. iz a in @ Ip = 0.1 Iggg 1 1016 10 100 1K 10K 100K f - FREQUENCY (Hz) Common-Source Forward Transconductance vs Drain Current Vos = 10 fai 9fs FORWARD TRANSCONDUCTANCE (umbos} 1.0 10 100 1000 Ip ORAIN CURRENT (pA} Common-Source Output Conductance vs Drain Current =-45 =20V Sox OUTPUT CONDUCTANCE {xumbos) 10 100 Ip DRAIN CURRENT (uA} 5-30 1979 Siliconix incorporated