AH128 1/4W High Linearity InGaP HBT Amplifier Product Features * 60 - 3500 MHz * +24.6 dBm P1dB * +41.5 dBm Output IP3 * 16.6 dB Gain @ 2140 MHz * 115 mA current draw * +5V Single Supply * MTTF > 100 Years * Lead-free/Green/RoHS-compliant SOT-89 Package Applications * * * * Product Description Functional Diagram The AH128 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41.5 dBm OIP3 and +24.6 dBm of compressed 1dB power while drawing 115 mA current. The AH128 is available in a lead-free/green/RoHS-compliant SOT-89 package. All devices are 100% RF and DC tested. GND The AH128 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. Internal biasing allows the AH128 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. 4 1 2 3 RF IN GND RF OUT Function RF Input RF Output / Vcc Ground Pin No. 1 3 2, 4 Repeaters Mobile Infrastructure WiMAX / WiBro LTE / WCDMA / EDGE / CDMA Specifications Parameter Typical Performance Units Min Typ Parameter 3500 Frequency Gain Input Return Loss Output Return Loss IS-95A Channel Power(3) Units MHz MHz dB dB dB dBm +14.6 W-CDMA Channel Power Output P1dB Output IP3(4) Noise Figure Quiescent Collector Current Device Voltage dBm dBm dB mA V +24.6 +41.5 4.4 115 +5 Output P1dB Output IP3(4) Noise Figure Quiescent Collector Current Device Voltage @ -50 dBc ACLR, 2140 MHz 60 Max Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss W-CDMA Channel Power(2) 14.5 95 2140 16.6 13 10 19 @ -50 dBc ACPR (2) @ -50 dBc ACLR 130 Typical MHz dB dB dB 920 19.5 14 7.8 1960 17.2 14 11 2140 16.6 13 10 dBm +17.5 dBm dBm dBm dB mA V +15.3 +15.5 +14.6 +24.6 +40 4.6 +24.8 +40.8 4.5 115 +5 +24.6 +41.5 4.4 1. Test conditions unless otherwise noted: 25C, Vsupply = +5 V, in tuned application circuit. 2. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 9.7 dB @ 0.01% Probability, 3.84 MHz BW 3. IS-95A, 9 channel Fwd, PAR = 9.7 dB @ 0.01% Probability , 1.23 MHz BW. 4. OIP3 is measured with two tones separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Measured at 13 dBm/tone for 900 MHz & 1960 MHz and 10 dBm/tone for 2140 MHz. Absolute Maximum Rating Parameter Rating Storage Temperature RF Input Power, CW, 50 , T=25C Device Voltage Max Junction Temperature, TJ -65 to +150 C Input P10dB +6 V Thermal Resistance, JC 116 C / W For 106 hours MTTF 200 C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description AH128-89G AH128-89PCB900 AH128-89PCB1960 AH128-89PCB2140 1/4 W High Linearity InGaP HBT Amplifier 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Standard T/R size = 1000 pieces on a 7" reel. Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 1 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier Typical Device Data S-Parameters (VDevice = +5 V, ICC = 115 mA, 25 C, unmatched 50 ohm system) Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters (VDevice = +5 V, ICC = 115 mA, 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) 50 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) -5.38 -4.89 -4.91 -3.95 -3.10 -2.51 -2.25 -2.12 -2.01 -2.01 -1.92 -1.84 -1.76 -1.73 -1.69 -1.74 -1.83 -1.90 -1.90 -173.57 -176.21 -175.57 -175.05 -179.25 175.19 170.64 165.24 160.47 156.16 150.48 145.43 141.16 137.11 131.81 127.64 121.13 115.79 112.40 22.87 21.96 21.84 21.01 19.51 18.02 16.77 15.56 14.47 13.46 12.74 11.87 11.08 10.51 10.11 9.60 9.17 8.52 8.12 166.30 165.00 151.04 130.39 114.04 102.07 92.59 84.05 76.48 69.77 63.07 56.47 50.21 45.46 39.00 33.91 27.49 22.19 16.48 -30.49 -30.37 -30.66 -30.54 -30.06 -29.47 -29.27 -29.04 -28.75 -28.78 -28.52 -28.43 -28.64 -28.47 -28.22 -27.96 -28.09 -28.02 -28.00 4.94 2.12 -0.34 1.26 -1.57 -3.23 -7.07 -9.77 -12.83 -16.94 -20.19 -24.12 -26.71 -29.12 -33.92 -37.08 -40.84 -43.96 -46.34 -12.66 -11.24 -11.69 -9.18 -7.38 -6.59 -6.09 -5.69 -5.57 -5.59 -5.46 -5.36 -5.26 -5.54 -5.63 -5.41 -5.37 -5.63 -5.73 -146.31 -162.50 -161.87 -156.72 -162.95 -171.09 -178.21 175.48 170.50 165.41 159.78 154.06 150.23 146.96 140.38 135.33 131.92 129.40 121.96 Device S-parameters are available for download off of the website at: http://www.tqs.com Application Circuit PCB Layout Circuit Board Material: 0.014" FR4, single layer, 1 oz copper, r = 4.3, Microstrip line details: width = .031", spacing = .035" Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 2 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier 700-800 MHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW Typical O-FDMA Performance at 25C Frequency (MHz) Gain Input Return Loss Output Return Loss EVM Pout=+16 dBm Output P1dB Output IP3 700 20.9 15.7 8.9 750 20.7 19.6 7.6 800 Units 20.4 dB 16 dB 6.6 dB 1.8 1.6 1.5 % +24.3 +24.4 +24.6 dBm +38.5 +39.7 +40.2 dBm Pout=+15 dBm/tone, 1MHz spacing Quiescent Current, Icq Vcc mA V 115 +5 R4 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of R1 is placed 105 mil from the AH128 RFin pin. (4.4o @ 750 MHz) 5. The edge of L2 is placed 40 mil from the edge of R1. (1.7o @ 750 MHz) 6. The edge of L3 is placed 135 mil from the AH128 RFout pin. (5.6o @ 750 MHz) 7. The edge of C9 is placed 75 mil from the edge of L3. (3.1o @ 750 MHz) C8 C4 C3 R1 L3 C9 C10 L2 L1 C10 C1 R2 C2 C9 Gain vs. Frequency EVM vs. Output Average Power vs. Frequency Return Loss T=25C 22 T=25C 0 T=25C 5 700 MHz -5 20 19 18 -10 -15 740 760 Frequency (MHz) 780 -30 700 800 Current vs Output Average Power vs. Frequency 0 720 740 760 Frequency (GHz) 780 750 MHz -50 15 16 17 Output Power (dBm) 18 700 MHz 19 19 T=25C 40 35 750 MHz 800 MHz 700 MHz -60 14 18 45 -45 800 MHz 80 17 OIP3 vs. Output Power/Tone vs. Frequency -55 100 16 50 OIP3 (dBm) 120 15 Output Power (dBm) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7 dB @ 0.01% Probability 3.84 MHz BW -40 140 700 MHz 14 800 T=25C -35 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW ACLR (dBc) Collector Current (mA) 160 S22 ACLR vs. Output Average Power vs. Frequency T=25C 180 2 1 S11 720 3 -20 -25 17 700 800 MHz 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW 4 EVM (%) S11, S22 (dB) Gain (dB) 21 750 MHz 750 MHz 800 MHz 30 10 12 14 16 Output Power (dBm) 18 20 8 10 12 14 16 18 Output Power/Tone (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000* FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 3 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier 869-960 MHz Reference Design (AH128-89PCB900) IS-95A, 9 channel Fwd, PAR = 9.7 dB @ 0.01% Probability Typical IS-95A Performance at 25C Frequency (MHz) Gain Input Return Loss Output Return Loss ACPR Pout=+16 dBm Output P1dB Output IP3 869 19.7 12 8.2 920 19.5 14 7.8 960 Units 19.4 dB 15 dB 7.3 dB -54 -55 -55 dBc +24.4 +24.6 +24.5 dBm Pout=13dBm/tone, 1MHz spacing Noise Figure Quiescent Current, Icq Vcc +39 +40 +41 dBm 4.7 4.6 115 +5 4.7 dB mA V Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of R2 is placed at 285mil from AH128 RFout pin. (14o @ 920 MHz) 5. The edge of C9 is placed against the edge of R2. 6. The edge of R1 is placed at 100mil from AH128 RFin pin. (5o @ 920 MHz) 7. The edge of C10 is placed 260mil from the edge of R1. (13o @ 920 MHz) T=25C T=25C 0 19 40 OIP3 (dBm) S11, S22 (dB) 20 -10 -15 S11 0.86 0.88 0.90 0.92 0.94 0.96 -25 0.84 0.98 ACPR vs. Output Average Power vs. Frequency -40 -45 0.86 -55 -60 -65 -70 0.94 0.96 7 0.98 ACPR vs. Output Average Power vs. Temperature f=920 MHz 869 MHz 920 MHz -80 12 14 Output Power (dBm) 16 -60 -65 18 +25C 12 -40C 14 Output Power (dBm) 869 MHz 18 7 -30 Collector Current (mA) -35 ACLR (dBc) -40 140 3 869 MHz 920 MHz 0.94 0.96 0.98 960 MHz 17 19 T=25C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 9.7 dB @ 0.01% Probability 3.84 MHz BW -45 -50 -55 -65 960 MHz 869 MHz 920 MHz 960 MHz -70 100 Frequency (GHz) 920 MHz 11 13 15 Output Power/Tone (dBm) -60 120 0.92 9 ACLR vs. Output Average Power vs. Frequency T=25C 160 2 0.90 35 +85C 16 180 4 19 25 10 200 5 17 T=25C Current vs Output Average Power vs. Frequency T=25C 11 13 15 Output Power/Tone (dBm) 30 NF vs. Frequency 6 +85C 40 -80 10 -40C OIP3 vs. Output Power/Tone vs. Frequency -55 -75 960 MHz 9 45 IS-95A, 9 channel Fwd PAR=9.7@0.01% Probability -70 -75 NF (dB) 0.88 0.90 0.92 Frequency (GHz) -50 ACPR (dBc) ACPR (dBc) -50 +25C OIP3 (dBm) -45 T=25C IS-95A, 9 channel Fwd PAR=9.7@0.01% Probability S22 25 Frequency (GHz) -40 35 30 -20 18 0.84 f=920 MHz 45 -5 21 Gain (dB) OIP3 vs. Output Power/Tone vs. Temperature Return Loss Gain vs. Frequency 22 12 14 16 18 20 Output Power (dBm) 22 24 10 12 14 Output Power (dBm) 16 18 Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 4 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier 1930-1990 MHz Reference Design (AH128-89PCB1960) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 9.7 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25C Frequency (MHz) Gain Input Return Loss Output Return Loss ACLR Pout=+15 dBm Output P1dB Output IP3 1930 17.3 13 11 1960 17.2 14 11 -52 -51 1990 Units 17.1 dB 15 dB 10 dB -51.5 dBc +24.8 +24.8 +24.8 dBm Pout=13dBm/tone, 1MHz spacing Noise Figure Quiescent Current, Icq Vcc +40.9 +40.8 +40.4 dBm 4.4 4.5 115 +5 4.6 dB mA V Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 265mil from AH128 RFout pin. (29 o @ 1960 MHz) 5. The edge of R2 is placed against the edge of C9. 6. The edge of R1 is placed at 100mil from AH128 RFin pin. (11 o @ 1960 MHz) 7. The edge of C10 is placed 220mil from the edge of R1. (24 o @ 1960 MHz) T=25C T=25C 0 19 17 -45 ACLR (dBc) 18 -10 -15 S11 15 1.92 1.94 1.96 Frequency (GHz) 1.98 -25 1.92 2.00 OIP3 vs. Output Power/Tone vs. Frequency 1.96 Frequency (GHz) 1.98 2.00 10 Collector Current (mA) 140 38 1960 MHz 1930 MHz 1990 MHz 1960 MHz 9 11 Output Power/Tone (dBm) 13 15 T=25C 4 1990 MHz 100 7 18 3 120 36 1990 MHz 16 5 NF (dB) 40 1960 MHz 14 Output Power (dBm) 6 160 1930 MHz 12 NF vs. Frequency T=25C 180 5 1930 MHz -60 1.94 200 42 OIP3 (dBm) S22 Current vs Output Average Power vs. Frequency T=25C 44 -50 -55 -20 16 T=25C -40 -5 S11, S22 (dB) Gain (dB) ACLR vs. Output Average Power vs. Frequency Return Loss Gain vs. Frequency 20 12 14 16 18 20 Output Power (dBm) 22 24 2 1.90 1.92 1.94 1.96 1.98 2.00 Frequency (GHz) Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 5 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier 2110-2170 MHz Reference Design (AH128-89PCB2140) W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 9.7 dB @ 0.01% Probability, 3.84 MHz BW Typical W-CDMA Performance at 25C Frequency (MHz) Gain Input Return Loss Output Return Loss ACLR Pout=+15 dBm Output P1dB Output IP3 2110 16.6 12 11 2140 16.6 13 10 -49 -51 2170 Units 16.7 dB 13 dB 10 dB -52 dBc +24.6 +24.6 +24.6 dBm +42.3 +41.5 +41.8 dBm Pout=10dBm/tone, 1MHz spacing Noise Figure Quiescent Current, Icq Vcc 4.4 4.4 115 +5 4.5 dB mA V Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 250mil from AH128 RFout pin. (29.6 o @ 2140 MHz) 5. The edge of R1 is placed at 100mil from AH128 RFin pin. (12 o @ 2140 MHz) 6. The edge of C10 is placed 180mil from the edge of R1. (21.3 o @ 2140 MHz) T=25C T=25C 0 15 40 OIP3 (dBm) S11,S22 (dB) 16 -10 -15 S11 2.12 2.14 2.16 2.18 2.20 -25 2.10 2.14 2.16 2.18 6 ACLR vs. Output Average Power vs. Temperature T=25C -45 -50 -55 +25C 2170 MHz -40C 8 10 12 Output Power (dBm) 14 10 12 Output Power (dBm) T=25C 2110 MHz 16 6 Collector Current (mA) 4 3 2140 MHz 10 2170 MHz 12 14 16 T=25C 180 160 140 120 2110 MHz 2 2.10 8 Output Power/Tone (dBm) 200 5 NF (dB) 14 Current vs Output Average Power vs. Frequency NF vs. Frequency 6 35 25 8 16 16 T=25C +85C -65 -65 14 30 -60 -60 2140 MHz 10 12 Output Power/Tone (dBm) 40 OIP3 (dBm) ACLR (dBc) -55 2110 MHz 8 45 -45 -50 +85C OIP3 vs. Output Power/Tone vs. Frequency f=2140 MHz -40 -40C 25 2.20 Frequency (GHz) ACLR vs. Output Average Power vs. Frequency ACLR (dBc) S22 +25C 2.12 Frequency (GHz) -40 35 30 -20 14 2.10 f=2140 MHz 45 -5 17 Gain (dB) OIP3 vs. Output Power/Tone vs. Temperature Return Loss Gain vs. Frequency 18 2140 MHz 2170 MHz 100 2.12 2.14 Frequency (GHz) 2.16 2.18 12 14 16 18 20 Output Power (dBm) 22 24 Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 6 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier 2.5-2.7 GHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels, 5 MHz Carrier BW Typical O-FDMA Performance at 25C Frequency (GHz) Gain Input Return Loss Output Return Loss EVM Pout=+17 dBm Output P1dB Output IP3 Pout=+8 dBm/tone, 1MHz spacing 2.5 14.7 7.1 15 2.6 15.1 13 10 2.7 Units 14.9 dB 13 dB 8.1 dB 2.4 2.4 2.3 % 24.5 24.8 24.7 dBm 41.1 40.8 41.5 dBm Quiescent Current, Icq Vcc mA V 115 +5 R4 Notes: 1. The primary RF microstrip line is 50 . 2. Components shown on the silkscreen but not on the schematic are not used. 3. 0 jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 230 mil from AH128 RFout pin. (32o @ 2.5 GHz) 5. The edge of R1 is placed at 100 mil from AH128 RFin pin. (14o @ 2.5 GHz) 6. The edge of C10 is placed 25 mil from the edge of R1. (3.5o @ 2.5 GHz) C8 C8 C4 C3 L1 C10 R1 C1 R2 C2 C9 C10 C9 Gain vs. Frequency EVM vs. Output Average Power vs. Frequency Return Loss T=25C 17 T=25C 0 T=25C 5 2.5 GHz -5 15 14 13 -10 3 -15 2 -20 1 -25 S11 12 2.40 2.50 2.60 Frequency (GHz) 2.70 2.80 -30 2.40 2.60 Frequency (GHz) 2.6 GHz 10 12 14 16 18 Output Power (dBm) T=25C 2.7 GHz 45 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2 dB @ 0.01% Probability 3.84 MHz BW OIP3 (dBm) ACLR (dBc) 8 2.80 50 -40 -45 2.70 OIP3 vs. Output Power/Tone vs. Frequency T=25C 2.5 GHz S22 0 2.50 ACLR vs. Output Average Power vs. Frequency -35 2.7 GHz 4 EVM (%) S11, S22 (dB) Gain (dB) 16 2.6 GHz -50 40 35 -55 2.5 GHz -60 2.6 GHz 2.7 GHz 30 8 10 12 14 Output Power (dBm) 16 18 6 8 10 12 14 16 18 20 Output Power/Tone (dBm) Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 7 of 8 Aug 2009 AH128 1/4W High Linearity InGaP HBT Amplifier Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The AH128 will be marked with an "AH128G" designator with a lot code marked below the part designator. The "Y" represents the last digit of the year the part was manufactured, the "XXX" is an autogenerated number, and "Z" refers to a wafer number in a lot batch. AH128G YXXX-Z Tape and reel specifications for this part are located on the website in the "Application Notes" section. MSL / ESD Rating Land Pattern ESD Rating: Value: Test: Standard: Class 2 Passes 2000V to <4000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 2000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Specifications and information are subject to change without notice TriQuint Semiconductor Inc * Phone 1-503-615-9000 * FAX: 503-615-8900 * e-mail: info-sales@tqs.com * Web site: www.TriQuint.com Page 8 of 8 Aug 2009