© by SEMIKRON B 1 – 47
SEMIPACK
®
1
Thyristor/ Diode Modules
SKKT 56 SKKH 56
SKKT 57 SKKH 57
SKKT 57B
SKKT 56 SKKH 56
SKKT 57 SKKH 57
Features
•Heat transfer through aluminium
oxide ceramic isolated metal
baseplate
•Hard soldered joints for high
reliability
•UL recognized, file no. E 63 532
Typical Applications
•DC motor control (e. g. for
machine tools)
•AC motor soft starte rs
•Temperature control (e. g. fo r
ovens, chemical processes)
•Professional light dimming
(studios, theaters)
1)
Also available in SKKT 57 B
configuration (case A 48)
2)
See the assembly instructions
3)
/20 E, /22 E max. 30 mA
V
RSM
V
RRM
(dv/ I
TRMS
(maximum value for continuous operation)
V
DRM
dt)
cr
95 A
I
TAV
(sin. 180; T
case
= 74 °C)
VVV/µs60 A
500 400 500 – – SKKH 56/04 D –
700 600 500 SKKT 56/06 D SKKT 57/06 D SKKH 56/06 D SKKH 57/06 D
900 800 500 SKKT 56/08 D SKKT 57/08 D
1)
SKKH 56/08 D SKKH 57/08 D
1300 1200 500 SKKT 56/12 D – SKKH 56/12 D –
1300 1200 1000 SKKT 56/12 E SKKT 57/12 E
1)
– SKKH 57/12 E
1500 1400 1000 SKKT 56/14 E SKKT 57/14 E
1)
SKKH 56/14 E SKKH 57/14 E
1700 1600 1000 SKKT 56/16 E SKKT 57/16 E
1)
SKKH 56/16 E SKKH 57/16 E
1900 1800 1000 SKKT 56/18 E SKKT 57/18 E
1)
SKKH 56/18 E SKKH 57/18 E
2100 2000 1000 SKKT 56/20 E SKKT 57/20 E
1)
– SKKH 57/20 E
2300 2200 1000 SKKT 56/22 E SKKT 57/22 E
1)
– SKKH 57/22 E
Symbol Conditions SKKT 56 SKKT 57
SKKH 56 SKKT 57B
SKKH 57
I
TAV
sin. 180; T
case
= 74 °C 60 A
T
case
= 80 °C 55 A
I
D
B2/B6 T
amb
= 45 °C; P 3/180 57 A/68 A
T
amb
= 35 °C; P 3/180 F 100 A/130 A
I
RMS
W1/W3 T
amb
= 35 °C; P 3/180 F 130 A/3 x 100 A
I
TSM
T
vj
= 25 °C; 10 ms 1 500 A
T
vj
= 125 °C; 10 ms 1 250 A
i
2
tT
vj
= 25 °C; 8,3 ... 10 ms 11 000 A
2
s
T
vj
= 125 °C; 8,3 ... 10 ms 8 000 A
2
s
t
gd
T
vj
= 25 °C; I
G
= 1 A; di
G
/dt = 1 A/µs1 µs
t
gr
V
D
= 0,67 . V
DRM
2 µs
(di/dt)
cr
T
vj
= 125 °C 150 A/µs
t
q
T
vj
= 125 °C typ. 80 µs
I
H
T
vj
= 25 °C; typ.150 mA; max. 250 mA
I
L
T
vj
= 25 °C; R
G
= 33 Ωtyp.300 mA; max. 600 mA
V
T
T
vj
= 25 °C; I
T
= 200 A max. 1,65 V
V
T(TO)
T
vj
= 125 °C 0,9 V
r
T
T
vj
= 125 °C3,5 mΩ
I
DD
; I
RD
T
vj
= 125 °C; V
DD
= V
DRM
; V
RD
= V
RRM
max. 15 mA
3)
V
GT
T
vj
= 25 °C; d. c. 3 V
I
GT
T
vj
= 25 °C; d. c. 150 mA
V
GD
T
vj
= 125 °C; d. c. 0,25 V
I
GD
T
vj
= 125 °C; d. c. 6 mA
R
thjc
cont. 0,57 °C/W / 0,29 °C/W
sin. 180 per thyristor/per module 0,60 °C/W / 0,30 °C/W
rec.120 0,64 °C/W / 0,32 °C/W
R
thch
0,2 °C/W / 0,1 °C/W
T
vj
, T
stg
– 40 ... +125 °C
V
isol
a. c. 50 Hz; r.m.s.; 1 s/1 min 3600 V∼ / 3000 V ∼
M
1
to heatsink SI units / US units 5 Nm/44 lb. in. ± 15 %
2)
M
2
to terminals 3 Nm/26 lb. in. ± 15 %
a5
.
9,81 m/s
2
w approx. 120 g
Case → page B 1 – 93 SKKT 56: A 5 SKKT 57: A 46
SKKH 56: A 6 SKKT 57B: A 48
SKKH 57: A 47
0896
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© by SEMIKRONB 1 – 48 http://store.iiic.cc/
© by SEMIKRON B 1 – 49
http://store.iiic.cc/
© by SEMIKRONB 1 – 50 http://store.iiic.cc/
