BSR43
Datasheet Number: DS33018 Rev. 5 - 2
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80V NPN MEDIUM POWER TRANSISTOR IN SOT89
Features
BVCEO > 80V
I
C = -1A High Continuous Current
Low saturation voltage VCE(sat) < 250mV @ 150mA
Complementary type BSR33
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP capable (Note 4)
Application
Load management functions
Solenoid, relay and actuator drivers
DC – DC modules
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish, Solderable per MIL-STD-202,
Method 208
Weight: 0.052 grams (Approximate)
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BSR43TA AEC-Q101 AR4 7 12 1,000
BSR43QTA Automotive AR4 7 12 1,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q10x qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Top View
SOT89
Device Symbol Top View
Pin-Out
A
R4 = Product Type Marking Code
C
E
B
C
E
C
B
AR4
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Datasheet Number: DS33018 Rev. 5 - 2
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 90 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V
Continuous Collector Current IC 1 A
Peak Pulse Current ICM 2 A
Peak Base Current IBM 200 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
PD
1
W
(Note 7) 1.5
(Note 8) 2.1
Thermal Resistance, Junction to Ambient Air
(Note 6)
RΘJA
125
°C/W
(Note 7) 83
(Note 8) 60
Thermal Resistance, Junction to Lead (Note 9) RΘJL 13 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
ESD Ratings (Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
7. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BSR43
Datasheet Number: DS33018 Rev. 5 - 2
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Thermal Characteristics and Derating Information
0 500 1000 1500 2000 2500
0
1
2
3
0 500 1000 1500 2000 2500
40.0
60.0
80.0
100.0
120.0
140.0
2oz copper
1oz copper
Tamb=25°C
Copper Area (sqmm)
Maximum Power (W)
2oz copper
1oz copper
Tamb=25°C
Copper Area (sqmm)
Thermal Resistance (°C/W)
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 90 – V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 11) BVCEO 80 – V
IC = 10mA
Emitter-Base Breakdown Voltage BVEBO 5 – – V
IE = 100µA
Collector Cutoff Current ICBO – –
100
50
nA
µA
VCB = 60V
VCB = 60V, TJ = +150°C
DC current transfer Static ratio (Note 11) hFE
30
100
50
300
IC = 100µA, VCE = 5V
IC = 100mA, VCE = 5V
IC = 500mA, VCE = 5V
Collector-Emitter Saturation Voltage (Note 11) VCE(sat)
0.25
0.5 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage (Note 11) VBE(sat) – –
1.0
1.2 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Transitional Frequency fT 100 – MHz
IC = 50mA, VCE = 10V
f = 35MHz
Output capacitance Cobo – – 12 pF
VCB = 10V, f = 1MHz
Input Capacitance Cibo – – 90 pF
VCB = 0.5V, f = 1MHZ
Turn-On Time Ton – – 250 ns
VCC =20V, IC =100mA
IB1 =IB2 =5mA Turn-Off Time Toff – – 1000 ns
Note: 11. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%.
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Datasheet Number: DS33018 Rev. 5 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1m 10m 100m 1
10m
100m
1
10m 100m 1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1m 10m 100m 1
0
50
100
150
200
250
300
350
400
1m 10m 100m 1
0.4
0.6
0.8
1.0
1.2
1m 10m 100m 1
0.2
0.4
0.6
0.8
1.0
1.2
VCE(SAT) v IC
Tamb=25°C
IC/IB=5
IC/IB=20
IC/IB=10
VCE(SAT) (V)
IC Collector Current (A)
150°C
VBE(SAT) v IC
IC/IB=10
100°C
25°C
-55°C
VCE(SAT) (V)
IC Collector Current (A)
150°C
hFE v IC
VCE=5V
-55°C
25°C
100°C
Typical Gain (hFE)
IC Collector Current (A)
150°C
25°C
VCE(SAT) v IC
IC/IB=10
100°C
-55°C
VBE(SAT) (V)
IC Collector Current (A)
150°C
VBE(ON) v IC
VCE=5V
100°C
25°C
-55°C
VBE(ON) (V)
IC Collector Current (A)
BSR43
Datasheet Number: DS33018 Rev. 5 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
Y1
X1
Y2
Y
C
X (3x)
Y3 Y4
X2 (2x)
EH
D1
B1 B
e
C
L
A
D
8° (4X)
H
1
R0.200
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Datasheet Number: DS33018 Rev. 5 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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