MPQ6100, MPQ6I100A (suicon) MPQ6600, MPQ6600A SILICON plementary circuitry. fy = 125 MHz (Typ) @ Ic on 01-04 and Q2-03 QUAD DUAL-IN-LINE ANNULAR COMPLEMENTARY PAIR TRANSISTORS @ OC Current Gain Specified 100 wAdc to 10 mAdc @ Current-GainBandwidth Product = 0.5 mAdc @ NPN Transistor Similar to 2N2483 or 2N2484 @ PNP Transistor Similar to 2N3798 or 2N3799 @ MPQ6600,A Matching Characteristics Available as Specials ... designed for DC to VHF amplifier applications and com- QUAD DUAL-IN-LINE SILICON COMPLEMENTARY PAIR TRANSISTORS MAXIMUM RATINGS MPQ6100, MPQG100A MPQ6600, MPQ6G00A MPQ6100 | MPQ6100A Rating Symbol | MPQ6600 | MPQG600A Unit Collector-Emitter Voltage VcEO 40 45 Vde Collector-Base Voltage VcB 60 Vde Emitter-Base Voltage VeB 5.0 Vde Collector Current - Continuous Ic 50 mAdc Four Each Transistors Transistor | Equal Power Power Dissipation Ta = 25C (1) Pp 500 900 mw Derate above 25C 40 72 mw/c Power Dissipation @ Tc = 25C Pp 0.825 2.4 Watts Derate above 25C 67 19.2 mw/c Operating and Storage Junction Ty. Teg ~55 to +150 C Temperature Range THERMAL CHARACTERISTICS Junction to | Junction to Characteristic Com Ambient Unit Thermal Resistance Each Die 134 250 [Cw Effective, 4 Die 52 151 ciw Coupling Factors Qt-O4 or 02-03 34 70 % Q1-Q2 or 3-04 2.0 26 % CONNECTION DIAGRAM Cc s E 8 c c 8 E 8 c NOTES: 14 8 14 8 1. LEADS WITHIN 0.13 mm (0.005) RADIUS OF TRUE POSITION AT SEATING aa a3 ae a3 PLANE AT MAXIMUM MATERIAL CONDITION. a a2 ai a2 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED + 7 1 7 PARALLEL c 8 Ee Ee 8 c c 8 Ee 8 c CASE 646 851MPQ6100,A, MPQ6600,A (continued) THERMAL COUPLING AND EFFECTIVE THERMAL RESISTANCE In muitipie chip devices, coupling of heat between die occurs. The junction temperature can be calculated as follows: (1) aTyq = Rat Pot + Rea Kg2 Pp + Ra3 Ke3Pp3 + Reg Koa Ppa Where aT 1 is the change in junction temperature of die 1 Rai thru 4 is the thermat resistance of die 1 through 4 PD1 thru 4 is the power dissipated in die 1 through 4 Ke2 thru 4 is the thermal coupling between die 1 and die 2 through 4. An effective package thermal resistance can be defined as follows: (2) Re (EFF) = 37 51/PpoT where: Pov7 is the total Package power dissipation. Assuming equal thermal resistance for each die, equation (1) simplifies to (3) 4T Jy = Rat !Pot + Kea Pp2 + Ka 3Pp3 * Keg Ppa) For the conditions where Pp 4 = Ppz = Pp3= Ppa, Pot =4Pp- equation (3) can be further simplified and by substituting into equation (2) results in (4) Re(err) = Real + Kea + Ka3 + Kgall4 Values for the coupling factors when either the case or the ambient is used as a reference are given in the table on page 1. If significant power is to be dissipated in two die, die at the opposite encis of the package should be used so that lowest possible junction temiperatures will result. ELECTRICAL CHARACTERISTICS (Tq = 25C unless otherwise noted.) Characteristic [_sympot [ min | Typ | Max | unt | Coltector-Emitter Breakdown Voltage(1} MPQ6100,6600 BYCEO a0 - - Vde (ic = 10 mAdc, Ig = 0) MPQ6100A ,6600A 45 ~ - Collector-Base Breakdown Voltage BVcBo 60 - ~ Vde (Iq = 10 wAde, Ie = 0) Emitter-Base Breakdown Voltage BYVEBO 5.0 ~ ~ Vdc (le = 10 pAdc, tc = 0) Collector Cutoff Current IeBo = _ 10 nAdc (Vog = 50 Vde, Ie = 0} ON CHARACTERISTICS (1) DC Current Gain hre ~ (Io = 100 uAdc, Vcg = 5.0 Vde) MPQ6100,6600 50 95 _ MPQ6100A,6600A 100 200 - (Ig = 500 wAdc, VE = 5.0 Vdc) MPQ6100,6600 75 140 - MPQ6100A,6600A 150 300 ~ (tc = 1.0 mAdc, Vcg = 5.0 Vdc) MPQ6100,6600 75 140 - MPQ6100A ,6600A 150 300 - (lg = 10 mAdc, Vcg = 5.0 Vde) MPQ6100,6600 60 110 - MPQ6100A ,6600A 125 275 = Collector-Emitter Saturation Vottage VCE (sat) _ 0.1 0.25 Vde (Ig = 1.0 mAdc, Ig = 100 pAdc) Base-Emitter Saturation Voitage VBE (sat) - 0.65 08 Vde (ig = 1.0 mAdc, 'g = 100 wAdc) DYNAMIC CHARACTERISTICS Current-GainBandwidth Product fr $0 125 > MHz (I = 500 wAdc, Veg = 5.0 Vde, f = 20 MHz) Output Capacitance Cob pF (Vcp = 5.0 Vde, le = 0, f = 100 kHz) PNP ~ 1.2 4.0 NPN = 1.8 40 Input Capacitance Cip pF (VgeE = 0.5 Vde, Ic = 0, f = 100 kHz) PNP _ 5.5 8.0 NPN = 6.0 8.0 Noise Figure NF - 40 - dB (ig = 100 pAdc, Vcg = 5.0 Vie, Rg = 10 kohms, f = 10 Hz to 15.7 kHz, BW = 10 kHz) (1)Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%. 852