Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1160 TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25) 3. BASE Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -1mA , IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA , IB=0 -10 V Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -6 V Collector cut-off current ICBO VCB= -20 V, IE=0 -0.1 A Emitter cut-off current IEBO VEB= -6 V, IC=0 -0.1 A hFE(1) VCE=-1V, IC= -0.5A 140 hFE(2) VCE=-1V, IC= -4A 60 VCE(sat) IC= -2A, IB=-50mA -0.2 fT VCE=-1V, IC= -0.5A 140 MHz Cob VCE=-10V, IE=0,f=1 MHz 50 pF 600 DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance -0.5 CLASSIFICATION OF hFE Rank Range A B C 140-280 200-400 300-600 V